Current Sensor ZMC10D FEATURES • Package : mod. DIL-14 (12 pin) • Double magnetic sensor chip (employing the magnetoresistive effect of thin film permalloy) measures the magnetic field generated by an internal current-carrying conductor • measurable direct or alternating current IM up to 10A • supply voltage 12 V • no auxiliary field HX required • it’s possible to overload the conductor (between pin’s 8,9,10 and 11,12,13) with 300A for 10 ms at Tamb = 25 °C Page 17 ZMC 10D ABSOLUTE MAXIMUM RATINGS Parameter Symbol Unit Supply voltage Vbr 12 V Supply current Ibr 20 mA Measurable current at DC: absolut value at AC: peak value Im 10 A Operating temperature range Tamb -25 to +100 °C Storage temperature range Tstg -25 to +125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated) Parameter Symbol Min. Typ. Max. Ii-o Input-Output-Insulation (pin 7, 8, 9, 10, 11, 12 shorted together and pin 1, 2, 3, 4, 5, 6 shorted together) - - 5 Unit nA Test conditions test voltage: 2000V DC test time: 1s Ω Bridge resistance Rbr 600 Temperature coefficient of bridge resistance Tcrbr - +0.3 - %/K Tamb = -25...+100°C Bridge supply current (constant current source) Ibr - 13 - mA Tamb = -25...+100°C Offset coefficient of Voutoff1 (current supply rejection ratio) CSRR - ±1.5 ±2.5 Offset voltage (static, constant) Voutoff1 - ±19 æ32 mV Ibr =13mA and Rbr = 0.8kΩ Offset voltage (dynamic, nonlinear) Voutoff2 - - ±2 mV in dependence on Im and Tamb Temperature coefficient of Voutoff1 Tcvoff1 -35 - +35 µV/K Ibr =13mA and Rbr = 0.8kΩ Open circuit sensitivity (absolute Vout/Im, with offset compensation, no disturbing field allowed) Sa 2.7 3.9 5.1 mV/A Ibr =13mA and Rbr = 0.8kΩ Resistance of the conductor R - 0.7 - mΩ Operating frequency fmax 0 - 100 kHz 800 1300 Page 18 mV/mA Im ≤ 10A ZMC 10D ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Test conditions Temparature coefficient of Sa Tcsi - - -0.12 %/K Ibr =13mA and Rbr = 0.8kΩ Output voltage range Vout - − <æ10 0 mV Ibr =13mA and Rbr = 0.8kΩ Nonlinearity error of Sa NLE - |6| − % Disturbance signal influence on disturbing field Hd (Vout =Im*Sa + Vouthd) Vouthd - ±0.5 - mV Im1 = 1A; Im2 = 2A Ibr =13m; Rbr = 0.8kΩ and Hd = 10A/m in 50mm distance to sensor Equations of condition: Voutoff1 [mV] = CSRR [mV/mA] * Ibr [mA] CSRR [mV/mA] = (R34 + R12 - R24 - R13) [Ω] * 0.5 (at Im = 0) pinning of magnetoresistive resistors: R34 : between pin 3 and pin 4 R12 : between pin 1 and pin 2 R24 : between pin 2 and pin 4 R13 : between pin 1 and pin 3 external connections: pin 2 shorted to pin 5 pin 1 shorted to pin 6 Circuit connections: condition: pin4: +Ibr and pin 1,6: -Ibr pin 7, 8, 9 pin 10, 11, 12 : +Im : -Im pin 2, 5: -Vout and pin 3: +Vout pin 7, 8, 9 pin 10, 11, 12 : -Im : + Im pin 2, 5: +Vout and pin 3: -Vout Devices are identified by type on the body of the device: ZMC10D ..... ZMC10D Ordering information: ZMC10D.......... in boxes Page 19