13003 Transistor (NPN) www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test otherwise 123 specified） conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000 µA，IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 µA，IC=0 9 V mA，IB=0 Collector cut-off current ICBO VCB= 700 V， IE=0 1000 µA Collector cut-off current ICEO VCE= 400 V， IB=0 500 µA Emitter cut-off current IEBO VEB= 1000 µA 9 V， IC=0 hFE（1） VCE= 2 V, IC= 0.5 A 8 40 hFE（2） VCE= 10 V, IC= 0.5 mA 5 Collector-emitter saturation voltage VCE(sat) IC=1000m A,IB=250 mA 1 V Base-emitter saturation voltage VBE(sat) IC=1000m A, IB= 250mA 1.2 V Base-emitter voltage VBE IE= 2000 mA 3 V Transition frequency fT Fall time tf Vcc=100V, Ic=1A 0.5 µS Storage time ts IB1=-IB2=0.2A 2.5 µS DC current gain Ic=100mA,VCE=10V f=1MH Z 5 MHZ CLASSIFICATION OF hFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 TO-220-3L PACKAGE OUTLINE DIMENSIONS A D C1 E E1 F φ L1 b1 A1 L b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.470 4.670 1.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.710 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 e 0.491 0.100TYP 2.540TYP e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 φ 3.790 3.890 0.149 0.153