ETC 2N2920DCSM-QR-B

2N2920DCSM–QR–B
DUAL NPN TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
3
1
4
A
6
5
6.22 ± 0.13
(0.245 ± 0.005)
0.23 rad.
(0.009)
A=
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
FEATURES
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
2.29 ± 0.20
(0.09 ± 0.008)
• HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
• BUILT & SCREENED IN ACCORDANCE
WITH CECC FULLL ASSESSMENT
LEVEL AND SQUENCE B
1.27 ± 0.13
(0.05 ± 0.005)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 4 – Collector 2
PAD 2 – Base 1
PAD 5 – Emitter 2
PAD 3 – Base 2
PAD 6 – Emitter 1
APPLICATIONS:
Suitable for use in general purpose differential
amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TSTG
Collector – Base Voltage
Collector – Emitter Voltage 1
Emitter – Base Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Storage Temperature Range
EACH SIDE
TOTAL DEVICE
60V
60V
5V
50mA
300mW
500mW
1.72mW / °C 2.86mW / °C
–65 to 200°C
NOTES
1. Base – Emitter Diode Open Circuited.
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Prelim.11/98
2N2920DCSM–QR–B
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
Min.
Typ.
Max. Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
IC = –10mA
V(BR)CBO Collector – Base Breakdown Voltage
IE = 0
60
V(BR)CEO*
Collector – Emitter Breakdown Voltage IC = –10mA
IB = 0
60
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = –10mA
IC = 0
5
ICBO
Collector Cut-off Current
VCB = –50V
IE = 0
10
nA
TA = 150°C
10
mA
IEBO
Emitter Cut-off Current
VEB = –4V
IC = 0
20
nA
IC = 10mA
VCE = 5V
100
IC = –100mA
VCE = 5V
150
TA = –55°C
75
IC = –500mA
VCE = –5V
150
450
IC = –1mA
VCE = –5V
150
450
IC = –10mA
VCE = –5V *
125
IC = –100mA
VCE = –5V
–0.7
IB = –10mA
IC = –100mA
–0.7
IB = –100mA
IC = –1mA
–0.8
IB = –10mA
IC = –100mA
–0.2
IB = –100mA
IC = –1mA
–0.25
hFE
VBE
DC Current Gain
Base – Emitter Voltage
VCE(sat)
Collector – Emitter Saturation Voltage
hie
Small Signal Common – Emitter
Input Impedance
hfe
Small Signal Common – Emitter
Current Gain
hre
Small Signal Common – Emitter
Reverse Voltage Gain
hoe
Small Signal Common – Emitter
30
150
600
V
V
kW
—
25 x 10
-4
f = 1kHz
5
Small Signal Common – Emitter
f = 30MHz
Current Gain
VCE = –5V
IC = –500mA
IC = –1mA
f = 100MHz
Cibo
3
—
IC = –1mA
VCE = –5V
Cobo
450
VCE = –10V
Output Admittance
|hfe|
V
Common – Base Open Circuit
VCB = –5V
Output Capacitance
f = 100kHz
Common – Base Open Circuit
VEB = –0.5V
Input Capacitance
f = 100kHz
IE = 0
IC = 0
60
mmho
1
—
1
5
4
pF
8
NOTES
* Pulse Test: tp = 300ms, d £ 2%.
1) Terminals not under test are open circuited under all test conditions.
Semelab plc.
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Prelim.11/98
2N2920DCSM–QR–B
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
TRANSISTOR MATCHING CHARACTERISTICS
hFE1
Static Forward Current Gain
VCE = –5V
hFE2
Balance Ratio
|VBE1 – VBE2|
Base – Emitter Voltage
Differential
|D(VBE1 – VBE2)DTA|
Base – Emitter Voltage
Differential
IC = –100mA
See Note 2.
Min.
Typ.
0.9
1
VCE = –5V
IC = –100mA
VCE = –5V
IC = –100mA
TA1 = 25°C
TA2 = –55°C
VCE = –5V
IC = –100mA
TA1 = 25°C
TA2 = 125°C
—
5
IC = –10mA to –10mA
VCE = –5V
Max. Unit
mV
3
0.8
mV
1
OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
INDIVIDUAL TRANSISTOR CHARACTERISTICS
VCE = –10V
RG = 3kW
Min.
Typ.
Max. Unit
IC = –100mA
f = 100Hz
7
Noise Bandwidth = 20Hz
F
Spot Noise Figure
VCE = –10V
IC = –100mA
RG = 3kW
f = 1kHz
3
dB
Noise Bandwidth = 200Hz
VCE = –10V
IC = –100mA
RG = 3kW
f = 10kHz
2.5
Noise Bandwidth = 2kHz
VCE = –10V
_
F
Average Noise Figure
IC = –100mA
RG = 3kW
Noise Bandwidth = 15.7kHz
3.5
dB
See Note 3.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
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Prelim.11/98
2N2920DCSM–QR–B
THERMAL INFORMATION
PT M axim um Continuous D issipation (W )
0.8
0.7
0.6
0.5
TO TA L D EVIC E
0.4
EAC H
TR AN SISTO R
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
TA Free Air Temperature (˚C)
Semelab plc.
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Prelim.11/98
2N2920DCSM–QR–B
Inspection Level for CECC Fully Assessed Devices - Level F
IL = Inspection levels
AQL = Acceptable quality Level (%)
Group A – Lot by Lot Inspection
Levels of Quality Assessment
Level F
Observations
IL AQL
Examination or test
SUB-GROUP A1
Visual inspection
SUB-GROUP A2a
Non operatives
SUB-GROUP A2b
Primary dc Charateristics
Electrical Measurements
Other dc Charateristics
SUB-GROUP A3
Electrical Measurements
ac Characteristics
SUB-GROUP A4
Electrical Measurements
IL
SUB-GROUP B1
Dimensions
SUB-GROUP B2c
Verification of ratings
SUB-GROUP B3
Lead bending if applicable
SUB-GROUP B4
Solderability
I
0.65
II
0.15
II
0.65
if < 4 tests
iI
1.0
If ³ 4 tests
I
2.5
if < 4 tests
I
4
If ³ 4 tests
S4
4
if < 4 tests
S4
6.5
If ³ 4 tests
IL = Inspection level amb = ambient rated case = case rated
AQL in (%) c = acceptance criterion n = sample size
Group B – Lot by Lot Inspection
Examination or test
NOTES
Levels of Quality Assessment
Level F
AQL
NOTES
S2
2.5
S4
4
S3
2.5
S4
2.5
S4
2.5
SEE C5
S4
1.5
SEE C8
SEE C2c
SUB-GROUP B5
Change of temp followed by acc.
Damp heat or sealing.
SUB-GROUP B8
Electrical Endurance
SUB-GROUP CTR
Unless otherwise stated in detail specification:
attributes information for B3 B4 B5 B8
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Prelim.11/98
2N2920DCSM–QR–B
Group C – Periodic Inspection
Examination or test
n/c
SUB-GROUP C1
P = periodicity (months) na = not applied
Levels of Quality Assessment
F (p= 3 months)
NOTES
8/1
Dimensions
SUB-GROUP C2a
Electrical Measurements
SUB-GROUP C2b
Complementary Characteristics
SUB-GROUP C2c
Verification of Ratings
SUB-GROUP C3
Tensile / Torque (if applicable)
SUB-GROUP C4
13/1
18/1
13/1
When not in B2c
8/1
18/1
Soldering Heat
SUB-GROUP C5
Change of temp followed by acc.
na
see B5
Damp heat or sealing.
SUB-GROUP C6
Shock acceleration vibration
SUB-GROUP C7
Damp heat (if applicable)
8/1
18/1
SUB-GROUP C8
43/3
amb
Electrical Endurance
34/2
case
SUB-GROUP C9
43/3
amb
Storage at high temp
34/2
case
SUB-GROUP CTR
Semelab plc.
Unless otherwise stated in detail specification: attributes information
for C3, C5, C6, C9. Measurement inofrmation before and after C8
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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Prelim.11/98
2N2920DCSM–QR–B
Screening According to CECC Sequence B
SEQUENCE B
24 Hour
High Temperature Storage
Rapid change of Temperature
Acceleration Test
Fine & Gross Leak Test
Test Electrical Characteristics
72 Hour Burn-In Electrical
Operation (ambient rated) or
High Temperature Reverse
Bias (case rated)
Test Electrical Characteristics
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim.11/98