2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −160 V Collector-emitter voltage VCEO −160 V Emitter-base voltage VEBO −5 V Collector current IC −1.5 A Base current IB −0.3 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 15 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SA1225 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −160 V, IE = 0 ― ― −1.0 µA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −160 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V 70 ― 240 hFE VCE = −5 V, IC = −100 mA (Note) DC current gain Collector emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.5 V Base-emitter voltage VBE VCE = −5 V, IC = −500 mA ― ― −1.0 V Transition frequency fT VCE = −10 V, IC = −100 mA ― 100 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF Collector output capacitance Note: hFE classification Cob O: 70 to 140, Y: 120 to 240 Marking A1225 Product No. Lot No. hFE Classification Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SA1225 IC – VCE hFE – IC 500 −1.0 −8 Common emitter hFE −10 Tc = 25°C −0.8 DC current gain −6 Collector current IC (A) −20 −0.6 −4 Common emitter 300 VCE = −5 V Tc = 100°C 25 100 −25 50 30 −0.4 10 −0.003 IB = −2 mA −0.01 −0.2 −0.03 −0.1 −0.3 Collector current IC −1 (A) 0 0 0 −2 −4 −6 −8 −10 Collector-emitter voltage VCE −12 −14 (V) fT – IC (MHz) Common emitter IC/IE = 10 fT −1 −0.5 Transition frequency Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC −3 Tc = 100°C −0.3 25 −25 −0.1 −0.05 −0.003 −0.01 −0.03 −0.1 Collector current −0.3 IC −1 300 Common emitter 100 VCE = −10 V Tc = 25°C 50 30 10 −5 −10 (A) −30 −100 Collector current IC −300 −1000 (mA) Safe Operating Area −5 −3 PC – Ta IC max (pulse)* 24 1 ms* 10 ms* −0.5 DC operation Tc = 25°C −0.3 Collector current PC (W) −1 Collector power dissipation IC (A) IC max (continuous) −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated −0.01 VCEO max linearly with increase in temperature. −0.005 −0.3 −1 −3 −10 −30 Collector-emitter voltage VCE −100 20 16 (V) (1) 12 8 4 (2) (3) 0 0 −300 (1) Tc = Ta Infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2002-07-23 2SA1225 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-07-23