ETC 2SA1566E

2SA1566
Silicon PNP Epitaxial
ADE-208-1021 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SA1566
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–120
—
—
V
I C = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–120
—
—
V
I C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–0.1
µA
VCB = –70 V, IE = 0
Emitter cutoff current
I EBO
—
—
–0.1
µA
VEB = –2 V, IC = 0
250
—
800
1
VCE = –12 V, IC = –2 mA*2
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
VCE(sat)
—
—
–0.15
V
I C = –10 mA, IB = –1 mA*2
Base to emitter voltage
VBE(sat)
—
—
–1.0
V
I C = –10 mA, IB = –1 mA*2
Notes: 1. The 2SA1566 is grouped by hFE as follows.
2. Pulse test
Grade
D
E
Mark
JID
JIE
hFE
250 to 500
400 to 800
2
2SA1566
Typical Output Characteristics
–10
150
Collector Current IC (mA)
Collector power dissipation Pc (mW)
Maximum Collector Dissipation Curve
100
50
0
–16
–6
–14
–12
–10
–8
–4
–6
–4
–2 µA
IB = 0
–2
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
1,000
–100
VCE = –6 V
Pulse
Ta = 75°C
Ta = 75°C
–10
25
–25
–1.0
–0.1
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
DC current transfer ratio hFE
Collector Current IC (mA)
–18
–8
0
50
100
150
Ambient Temperature Ta (°C)
–20
Pulse
300
25
–25
100
30
VCE = –12 V
Pulse
10
–1
–3
–10
–30
Collector Current IC (mA)
–100
3
2SA1566
Gain Bandwidth Product vs.
Collector Current
–1.0
1,000
IC = 10 IB
Pulse
Gain bandwidth product fT (MHz)
Collector to emitter saturation voltage
VCE (sat) (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
–0.3
–0.1
Ta = 75°C
–25
25
–0.03
–0.01
–1
–3
–10
–30
Collector Current IC (mA)
–100
500
VCE = –6 V
Pulse
200
100
50
20
10
–0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
Collector output capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
100
f = 1 MHz
IE = 0
30
10
3
1
–1
4
–3
–10
–30
–100
Collector to Base Voltage VCB (V)
–50
2SA1566
Package Dimensions
As of January, 2001
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK
—
Conforms
0.011 g
5
2SA1566
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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