2SA2083 Silicon PNP Epitaxial ADE-208-1478 (Z) Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA2083 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Collector power dissipation PC* 130 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –55 V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –55 V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 V IE = –10 µA, IC = 0 Collector cutoff current ICBO –0.5 µA VCB = –30 V, IE = 0 Emitter cutoff current IEBO –0.5 µA VEB = –2 V, IC = 0 DC current transfer ratio hFE* 160 800 VCE = –12 V, IC = –2 mA Collector to emitter saturation voltage VCE(sat) –0.5 V IC = –10 mA, IB = –1 mA Base to emitter voltage VBE –0.75 V VCE = –12 V, IC = –2 mA 1 Notes: 1. The 2SA2083 is grouped by hFE as follows. Grade C D E Mark CC CD CE hFE 160 to 320 250 to 500 400 to 800 Rev.0, Feb. 2002, page 2 of 6 2SA2083 PC* (mW) Maximum Collector Dissipation Curve IC (mA) –30 100 50 *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 50 0 –25 –20 100 150 –5 µA –2 0 IB = 0 –2 –4 –6 Collector to Emitter Voltage –100 µ –10 µ –0.6 –0.8 Base to Emitter Voltage VBE (V) –1.0 –8 –10 VCE (V) DC Current Transfer Ratio vs. Collector Current VCE = –12 V Pulse test hFE DC Current Transfer Ratio –1 m –0.4 –10 10,000 –10 m –0.2 –4 Ta (°C) VCE = –12 V Pulse test 0 –15 Pulse test Typical Transfer Characteristics –100 m IC (A) –8 –6 Ambient Temperature Collector Current Typical Output Characteristics –10 Collector Current Collector Power Dissipation 150 1,000 100 10 –10 µ –100 µ –1 m Collector Current –10 m –50 m IC (A) Rev.0, Feb. 2002, page 3 of 6 2SA2083 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1 –1 –2 –5 –10 –20 –50 Collector to Base Voltage VCB (V) Rev.0, Feb. 2002, page 4 of 6 2SA2083 Package Dimensions As of July, 2001 Unit: mm 1.6 ± 0.2 +0.1 0.3 –0.05 +0.1 +0.1 1.6 ± 0.2 0.4 0.8 ± 0.1 0.4 0.15 –0.05 0 – 0.1 +0.1 0.2 –0.05 0.15 0.5 0.5 1.0 ± 0.1 0.7 ± 0.1 0.2 –0.05 Hitachi Code JEDEC JEITA Mass (reference value) SMPAK — Conforms 0.003 g Rev.0, Feb. 2002, page 5 of 6 2SA2083 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Feb. 2002, page 6 of 6