ETC 2SA2080C

2SA2080
Silicon PNP Epitaxial
ADE-208-1476 (Z)
Rev. 0
Feb. 2002
Features
• Low frequency amplifier
Outline
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SA2080
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–30
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–100
mA
Emitter current
IE
100
mA
Collector power dissipation
PC*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +125
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–30


V
IC = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
–30


V
IC = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5


V
IE = –10 µA, IC = 0
Collector cutoff current
ICBO


–0.5
µA
VCB = –20 V, IE = 0
Emitter cutoff current
IEBO


–0.5
µA
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
100

500

VCE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
VCE(sat)


–0.2
V
IC = –10 mA, IB = –1 mA
Base to emitter voltage
VBE


–0.75
V
VCE = –12 V, IC = –2 mA
1
Notes: 1. The 2SA2080 is grouped by hFE as follows.
Grade
B
C
D
Mark
MB
MC
MD
hFE
100 to 200
160 to 320
250 to 500
Rev.0, Feb. 2002, page 2 of 6
2SA2080
Typical Output Characteristics (1)
–10
Collector Current IC (mA)
Collector Power Dissipation PC* (mW)
Maximum Collector Dissipation Curve
150
100
50
–25
–8
–20
–6
–15
–4
–10
–2
–5 µA
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0
50
100
IB = 0
150
0
–0.8
–1.0
–5
–25
VCE = –5 V
–20
Collector Current IC (mA)
Collector Current IC (mA)
–0.6
Typical Transfer Characteristics
Typical Output Characteristics (2)
Pulse test
–0.4
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
–10
–0.2
–8
–15
–6
–10
–4
–5 µA
–2
–4
–3
Ta = 75°C
25
–2
–1
IB = 0
0
–5
–10
–15
–20
–25
Collector to Emitter Voltage VCE (V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
Rev.0, Feb. 2002, page 3 of 6
2SA2080
Gain Bandwidth Product vs.
Collector Current
DC Current Transfer Ratio vs.
Collector Current
600
Gain Bandwidth Product fT (MHz)
DC Current Transfer Ratio
hFE
700
VCE = –5 V
Pulse test
500
400
300
200
–0.01
–0.1
–1.0
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector Current
–10
500
VCE = –10 V
Pulse test
400
300
200
100
0
–0.5
–100
–2
Collector Current
IC (mA)
Collector to Emitter Saturation Voltage vs.
Collector Currrent
–0.28
IC = 10 IB
–0.24
–0.20
–0.16
–0.12
Ta = 75°C
–0.08
25
–0.04
0
–1
–2
–5
–10 –20
Collector Current
Rev.0, Feb. 2002, page 4 of 6
–1.0
–50 –100
IC (mA)
–5
–10
IC (mA)
–20
2SA2080
Package Dimensions
As of July, 2001
0.1
0.3 +– 0.05
0.2
0.65 0.65
1.3 ± 0.2
0.9 ± 0.1
0.1
0.3 +– 0.05
+ 0.1
0.16 – 0.06
0 – 0.1
0.425
1.25 ± 0.1
0.1
0.3 +– 0.05
2.1 ± 0.3
2.0 ± 0.2
0.425
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
CMPAK
—
Conforms
0.006 g
Rev.0, Feb. 2002, page 5 of 6
2SA2080
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 6 of 6