ETC 2SA893E

2SA893, 2SA893A
Silicon PNP Epitaxial
ADE-208-1002 (Z)
1st. Edition
Mar. 2001
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SC1890/A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA893, 2SA893A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA893
2SA893A
Unit
Collector to base voltage
VCBO
–90
–120
V
Collector to emitter voltage
VCEO
–90
–120
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–50
–50
mA
Collector power dissipation
PC
300
300
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA893
2SA893A
Item
Symbol
Min
Typ
Max
Min
Collector to emitter
breakdown voltage
V(BR)CEO
–90
—
—
Collector cutoff current
I CBO
—
—
Max
Unit
Test conditions
–120 —
—
V
I C = –1 mA, RBE = ∞
–0.5
—
—
—
µA
VCB = –75 V, IE = 0
—
—
—
—
—
–0.5
µA
VCB = –100 V, IE = 0
250
—
800
250
—
800
VCE = –12 V,
I C = –2 mA
Base to emitter voltage VBE
—
—
–0.75 —
—
–0.75 V
VCE = –12 V,
I C = –2 mA
Collector to emitter
saturation voltage
—
—
–0.5
—
—
–0.5
V
I C = –10 mA,
I B = –1 mA
Gain bandwidth product f T
—
120
—
—
120
—
MHz
VCE = –12 V,
I C = –2 mA
Collector output
capacitance
Cob
—
1.8
—
—
1.8
—
pF
VCB = –25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
2
10
—
2
10
dB
VCE = –6 V,
I C = –50 µA
Rg = 50 kΩ, f = 1 kHz
DC current transfer ratio hFE*
Note:
1
VCE(sat)
1. The 2SA893/A is grouped by h FE as follows.
D
E
250 to 500
400 to 800
See characteristic curves of 2SA872 and 2SA872A
2
Typ
2SA893, 2SA893A
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
300
200
100
0
100
150
50
Ambient Temperature Ta (°C)
3
2SA893, 2SA893A
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
0.7
0.60 Max
0.55Max
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
TO-92 (1)
Conforms
Conforms
0.25 g
2SA893, 2SA893A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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5