2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial ADE-208-1027A (Z) 2nd. Edition Mar. 2001 Application • Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB715 2SB716 2SB716A Unit Collector to base voltage VCBO –100 –120 –140 V Collector to emitter voltage VCEO –100 –120 –140 V Emitter to base voltage VEBO –5 –5 –5 V Collector current IC –50 –50 –50 mA Collector power dissipation PC 750 750 750 mW Junction temperature Tj 150 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SB715 Typ 2SB716 2SB716A Max Min Min Item Symbol Min Typ Max Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –100 — — –120 — — –140 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –100 — — –120 — — –140 — — V IC = –1 mA, RBE = ∞ Collector cutoff current ICBO — — –0.5 — — — — — — µA VCB = –80 V, I E = 0 — — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0 250 — 800 250 — 800 250 — 500 VCE = –12 V, IC = –2 mA hFE2 125 — — 125 — — 125 — — VCE = –12 V, IC = –10 mA Base to emitter voltage VBE — — –0.75 — — –0.75 — — –0.75 V VCE = –12 V, IC = –2 mA Collector to emitter saturation voltage VCE(sat) — — –0.2 — — –0.2 — — –0.2 V IC = –10 mA, IB = –1 mA Gain bandwidth product fT — 150 — — 150 — — 150 — MHz VCE = –12 V, IC = –5 mA Collector output capacitance — 1.8 — — 1.8 — — 1.8 — pF DC current transfer ratio hFE1* Note: 1 Cob 1. The 2SB715, 2SB716 and 2SB716A are grouped by h FE1 as follows. D E 2SB715, 2SB716 250 to 500 400 to 800 2SB716A — 2 250 to 500 VCB = –25 V, I E = 0, f = 1 MHz 2SB715, 2SB716, 2SB716A Typical Output Characteristics –10 750 Collector Current IC (mA) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 500 250 –16 –14 –8 –6 –12 –10 –4 –6 –8 –4 –2 µA –2 IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) –10 –20 –30 –40 –50 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics –10 –3 DC Current Transfer Ratio hFE Collector Current IC (mA) 1,000 VCE = –12 V Pulse –1.0 –0.3 Ta = 100°C –0.1 –0.03 75 50 25 –0.01 –0.2 0 VCE = –12 V Pulse 800 Ta = 100°C 600 0 –25 400 75 50 25 200 –25 –0.4 –0.6 –0.8 Base to Emitter Voltage VBE (V) 0 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector Current IC (mA) –10 –30 3 2SB715, 2SB716, 2SB716A Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 1,000 VCE = –12 V 300 100 30 10 5 –0.01 –0.03 –0.1 –0.3 –1.0 –3 Collector Current IC (mA) –10 –30–50 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 –1 –3 –10 –30 –100 Collector to Base Voltage VCB (V) Area of Safe Operation –100 Ta = 25°C Collector Current IC (mA) IC (max) –50 P D C C –20 O = 75 0 pe ra m W tio n (–50 V, –15 mA) –10 (–100 V, –7.5 mA) –5 (–120 V, –5 mA) (–140 V, –4 mA) –2 2SB715 2SB716A 2SB716 –1 –5 –10 –20 –50 –100 –200 –500 Collector to Emitter Voltage VCE (V) 4 2SB715, 2SB716, 2SB716A Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 Mod — Conforms 0.35 g 5 2SB715, 2SB716, 2SB716A Cautions 1. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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