2SB831 Silicon PNP Epitaxial ADE-208-1033 (Z) 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –0.7 A Collector peak current iC(peak) –1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –25 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –20 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1.0 µA VCB = –20 V, IE = 0 85 — 240 1 VCE = –1 V, IC = –0.15 A*2 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.5 V I C = –0.5 A, IB = –0.05 A*2 Base to emitter voltage VBE — — –1.0 V VCE = –1 V, IC = –0.15 A*2 Notes: 1. The 2SB831 is grouped by hFE as follows. 2. Pulse test Grade B C Mark BB BC hFE 85 to 170 120 to 240 See characteristic curves of 2SB561. 2 2SB831 Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 2SB831 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 4 MPAK — Conforms 0.011 g 2SB831 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 5