ETC 2SC1213AC

2SC1213, 2SC1213A
Silicon NPN Epitaxial
ADE-208-1048 (Z)
1st. Edition
Mar. 2001
Application
• Low frequency amplifier
• Complementary pair with 2SA673 and 2SA673A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1213, 2SC1213A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1213
2SC1213A
Unit
Collector to base voltage
VCBO
35
50
V
Collector to emitter voltage
VCEO
35
50
V
Emitter to base voltage
VEBO
4
4
V
Collector current
IC
500
500
mA
Collector power dissipation
PC
400
400
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1213
2SC1213A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
35
—
—
50
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
35
—
—
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
4
—
—
4
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
—
—
0.5
µA
VCB = 20 V, IE = 0
60
—
320
60
—
320
VCE = 3 V, IC =10 mA
hFE
10
—
—
10
—
—
VCE = 3 V,
I C = 500 mA*2
VCE(sat)
—
0.2
0.6
—
0.2
0.6
V
I C = 150 mA,
I B = 15 mA*2
—
0.64
—
—
0.64
—
V
VCE = 3 V, IC = 10 mA
DC current tarnsfer ratio hFE*
Collector to emitter
saturation voltage
1
Base to emitter voltage VBE
Notes: 1. The 2SC1213 and 2SC1213A are grouped by h FE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
2
2SC1213, 2SC1213A
Collector Current IC (mA)
0.8
400
200
80
0.7
P
C
0.6
60
=
40
0
m
W
0.5
0.4
40
0.3
0.2
20
0.1 mA
IB = 0
400
300
Typical Output Characteristics (2)
10 9
8
7
6
5
4
3
2
200
1 mA
PC = 400
mW
100
IB = 0
0
6
8
10
2
4
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
30
VCE = 3 V
10
3
25
–25
500
6
8
10
2
4
Collector to Emitter Voltage VCE (V)
0
100
150
50
Ambient Temperature Ta (°C)
Ta = 75°C
0
Collector Current IC (mA)
Typical Output Characteristics (1)
1.0 0.9
100
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
600
1.0
0.3
0
0.2
0.4 0.6 0.8 1.0
1.2
Base to Emitter Voltage VBE (V)
3
2SC1213, 2SC1213A
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio hFE
140
100
80
60
40
20
0
4
VCE = 3 V
Ta = 25°C
120
2
5
10 20
50 100 200
Collector Current IC (mA)
500
2SC1213, 2SC1213A
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
0.7
0.60 Max
0.55Max
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
5
2SC1213, 2SC1213A
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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