ETC 2SC2324(K)

2SC2324(K)
Silicon NPN Epitaxial
ADE-208-883 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1
1. Emitter
2. Collector
3. Base
2
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1
A
Collector peak current
I C(peak)
2
A
Collector power dissipation
PC
0.8
W
8
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC2324(K)
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
60
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 0.1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 60 V, IE = 0
DC current transfer ratio
hFE
2000
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
Turn on time
t on
—
100
—
ns
VCC = 12 V
Turn off time
t off
—
600
—
ns
I C = 250 mA, IB1 = –IB2 = 5 mA
Note:
Symbol
VCE = 10 V, IC = 500 mA*1
I C = 500 mA, IB = 0.5 mA*1
1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
s
s
s
era
Op
0.1
n
tio
Collector Current IC (A)
s
0µ
1m
0.3
DC
2
Ta = 25°C
1 Shot Pulse
DC (TC = 25°C)
0m
4
IC (max)
1.0
=1
6
10
8
1µ
3 i
C (peak)
PW
Collector power dissipation Pc (W)
10
0.03
0
2
50
100
150
Case Temperature TC (°C)
200
1
2
5
10
20
50 100
Collector to emitter Voltage VCE (V)
2SC2324(K)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
1.6
0.5
TC = 25°C
105
0.4
0.3
DC current transfer ratio hFE
Collector Current IC (A)
2.0
0.2
1.2
0.1 mA
0.8
0.4
IB = 0
0
VCE = 10 V
Pulse
25
–25
104
103
10
1
2
3
4
5
Collector to emitter Voltage VCE (V)
lC/lB = 1,000
Pulse
Ta = –25°C
3
25
VBE (sat)
2
1.0
VCE (sat)
0.5
25
75
Ta = –25°C
0.2
20
50 100 200
500 1,000
Collector current IC (mA)
Switching time t (µs)
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
50 100 200
500 1,000
Collector current IC (mA)
10
75
0.1
10
20
Switching Time vs. Collector Current
Saturation Voltage vs. Collector Current
10
5
Ta = 75°C
1.0
tstg
0.3
0.1
0.03
0.01
0.01
tf
ton
Ta = 25°C
VCC = 12 V
ICC = 500 IB1 = –500 IB2
0.03
0.1
0.3
Collector current IC (A)
1.0
3
2SC2324(K)
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
100
30
1–1,000 s
10
1–1,000 ms
3
TC = 25°C
1.0
0.3
0.1
1
10
1
10
Time t
4
100
1,000 (s)
100
1,000 (ms)
2SC2324(K)
Package Dimensions
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-126 Mod
—
—
0.67 g
5
2SC2324(K)
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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