2SC2776 Silicon NPN Epitaxial Planar ADE-208-1077 (Z) 1st. Edition Mar. 2001 Application • VHF amplifier • Mixer, Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2776 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4 V Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 20 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 35 — 200 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — 0.8 1.2 V I C = 10 mA, IB = 1 mA Collector output capacitance Cob — 1.1 — pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT — 320 — MHz VCE = 6 V, IC = 1 mA Noise figure NF — 5.5 — dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 Ω Power gain PG — 17 — dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 Ω, RL = 550 Ω, Unneutralized Note: 1. The 2SC2776 is grouped by h FE as follows. Grade A B C Mark VA VB VC hFE 35 to 70 60 to 120 100 to 200 2 VCE = 6 V, IC = 1 mA 2SC2776 Typical Output Characteristics (1) 20 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 100 50 16 12 60 8 PC = 100 mW 40 4 20 µA IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) Typical Output Characteristics (2) 4 50 Typical Transfer Characteristics (1) 40 30 3 20 2 10 µA 1 IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 20 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 5 Collector Current IC (mA) 240 200 160 180 140 120 100 80 16 VCE = 6 V 12 8 4 0 0.60 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 3 2SC2776 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics (2) 140 4 VCE = 6 V 3 2 1 0 0.60 DC Current Transfer Ratio hFE Collector Current IC (mA) 5 VCE = 6 V 120 100 80 60 40 20 0 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 4 2.0 1.8 f = 1 MHz IE = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) Reverse Transfer Capacitance vs. Collector to Emitter Voltage Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 20 2.8 2.4 2.0 1.6 f = 1 MHz IE = –1 mA 1.2 0.8 0.4 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 2SC2776 Gain Bandwidth Product vs. Collector Current 450 1.0 Gain Bandwidth Product fT (MHz) Reverse Transfer Capacitance Cre (pF) Reverse Transfer Capacitance vs. Emitter Current 0.8 0.6 0.4 VCE = 10 V f = 1 MHz 0.2 0 –0.1 –0.2 –0.5 –1.0 –2 Emitter Current IE (mA) 400 350 300 250 200 150 100 12 12 10 Noise Figure NF (dB) Noise Figure NF (dB) Noise Figure vs. Collector Current 14 10 6 50 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) –5 Noise Figure vs. Collector to Emitter Voltage 8 VCE = 6 V IC = 1 mA f = 100 MHz Rg = 50 Ω 4 VCE = 6 V f = 100 MHz Rg = 50 Ω 8 6 4 2 2 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 0 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Power Gain Test Circuit IN f = 100 MHz Rg = 100 Ω 300 p D.U.T. 0.1 µ 10 p max 3k 500 OUT RL = 550 Ω 0.01 µ 0.01 µ VEE 0.01 µ VCC Unit R : Ω C:F 5 2SC2776 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 6 MPAK — Conforms 0.011 g 2SC2776 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 7