Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 3 A Collector to emitter voltage Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 40 0.5 +0.2 –0.1 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO(sus)* IC = 0.2A, L = 25mH 500 hFE1 VCE = 5V, IC = 0.1A 15 8 Forward current transfer ratio 1.3±0.2 2.54±0.25 PC Ta=25°C 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features typ VCB = 800V, IE = 0 max Unit 100 µA 100 µA V hFE2 VCE = 5V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A 1 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *V CEO(sus) Test circuit IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 200V 50/60Hz mercury relay 8 MHz 1.0 µs 3 µs 1.0 µs X L 25mH Y 120Ω 6V 1Ω 15V G 1 Power Transistors 2SC4638 PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 7 50 (1) 40 30 20 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 8 Collector current IC (A) Collector power dissipation PC (W) 80 IB=1200mA 6 1000mA 800mA 5 600mA 4 400mA 300mA 3 200mA 150mA 2 100mA 50mA 20mA 1 (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 TC=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 3 0.1 0.3 1 10 fT — IC 300 100 TC=100˚C 25˚C 30 –25˚C 10 3 1 0.3 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 10 3 Collector current IC (A) Transition frequency fT (MHz) 3 0.1 TC=100˚C VCE=5V 10 1 25˚C 3 1000 IC/IB=5 30 25˚C 10 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 1000 0.01 0.01 0.03 Collector current IC (A) 0.1 0.3 1 3 0.1 0.01 0.03 10 Collector current IC (A) Cob — VCB 0.1 0.3 1 3 10 Collector current IC (A) ton, tstg, tf — IC Area of safe operation (ASO) 100 10000 IE=0 f=1MHz TC=25˚C 3000 1000 300 100 30 10 10 0.3 10 30 100 ICP IC 3 t=0.5ms 1 1ms 0.3 10ms DC 0.1 0.03 0.01 0.01 3 tf 0.1 1 0.1 1 ton 1 0.03 Collector to base voltage VCB (V) 10 tstg 3 3 0.3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=250V TC=25˚C 30 Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 8 IC/IB=5 30 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 2 6 Collector current IC (A) 0 100 Non repetitive pulse 0.003 T =25˚C C 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC4638 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=50µH IC/IB=5 (IB1=–IB2) TC=100˚C Collector current IC (A) 7 L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC 3 2 Vclamp tW 1 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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