2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 370 V Emitter-base voltage VEBO 7 V DC IC 2 Pulse ICP 4 IB 0.5 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 15 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC5548 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 ― ― 20 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 370 ― ― hFE (1) VCE = 5 V, IC = 1 mA 50 ― 120 hFE (2) VCE = 5 V, IC = 0.2 A 60 ― 120 Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V ― ― 0.5 ― ― 3.0 ― ― 0.3 20 µs tr VCC ≈ 200 V IB1 Rise time Switching time Storage time IB2 tstg INPUT Fall time tf IB1 IB21 IB1 = 0.1 A, IB2 = −0.2 A IC 250 Ω DC current gain OUTPUT µs DUTY CYCLE ≤ 1% Marking C5548 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SC5548 IC – VCE hFE – IC 2.0 1000 150 300 hFE 100 1.6 80 60 1.2 DC current gain Collector current IC (A) 200 40 0.8 20 IB = 10 mA 0.4 Tc = 100°C 100 25 30 −55 10 3 Common emitter Common emitter VCE = 5 V Tc = 25°C 0 0 2 4 6 8 Collector-emitter voltage VCE 1 0.001 10 0.003 0.01 VCE (sat) – IC Common emitter IC/IB = 8 1 Tc = 100°C 25 0.3 −55 0.1 0.03 0.1 0.3 1 IC 3 3 25 1 0.3 0.1 0.01 10 −55 Tc = 100°C 0.1 0.03 0.3 Collector current (A) IC – VBE IC 3 1 (A) PC – Ta 20 (1) Tc = Ta infinite heat sink (2) No heat sink Collector power dissipation PC (W) Common emitter VCE = 5 V (A) (A) IC/IB = 8 2.0 IC 3 Common emitter Collector current Collector current IC 1 VBE (sat) – IC 3 1.6 1.2 0.8 0.4 Tc = 100°C 0 0 0.3 10 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 0.1 Collector current (V) 10 0.03 0.01 0.03 0.4 25 −55 0.8 Base-emitter voltage VBE 1.2 16 12 8 4 (2) 0 0 1.6 (V) (1) 25 50 75 100 125 150 175 200 Ambient temperature Ta (°C) 3 2002-07-23 2SC5548 Transient thermal resistance rth (°C/W) rth – tw 300 (2) 100 50 30 (1) 10 5 3 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 1 0.5 0.001 0.01 0.1 1 Pulse width 10 tw Switching Characteristics – IC 5 3 (µs) 1 ms* Switching time (A) IC Collector current tstg 10 µs* 1 0.3 DC operation Tc = 25°C 10 ms* 0.1 IC = 8IB1 2IB1 = −IB2 VCC ≈ 200 V Pulse width = 20µs Duty cycle ≤ 1％ Tc = 25°C 100 µs* IC max (pulsed)* 3 IC max (continuous) 0.5 1000 (s) Safe Operating Area 10 5 100 100 ms* 1 0.5 0.3 0.05 tf 0.03 0.1 0.1 0.3 0.5 1 Collector current 0.01 0.005 *: Single nonrepetitive pulse Tc = 25°C 0.003 Curves must be derated linearly with increase in temperature. 0.001 1 3 10 30 3 IC 5 10 (A) VCEO max 100 Collector-emitter voltage VCE 300 1000 (V) 4 2002-07-23 2SC5548 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 5 2002-07-23