Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features unit : mm 2022A [2SB817P / 2SD1047P] 15.6 14.0 3.2 4.8 2.0 1.3 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. 3.5 • Package Dimensions 2.6 • 1.6 20.0 2.0 0.6 1.0 Specifications 5.45 ( ) : 2SB817P Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2 3 1.4 1 0.6 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PB Conditions Ratings Unit Collector-to-Base Voltage VCBO (−)160 V Collector-to-Emitter Voltage VCEO (−)140 V Emitter-to-Base Voltage VEBO (−)6 V IC (−)12 A ICP PC (−)15 A 120 W 150 °C −40 to +150 °C Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Tj Storage Temperature Tstg Tc=25°C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Unit (--)0.1 mA (--)0.1 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-3036 No.6572-1/4 2SB817P / 2SD1047P Continued from preceding page. Parameter Symbol Ratings Conditions min hFE1 hFE2 VCE=(--)5V, IC=(--)1A 60* VCE=(--)5V, IC=(--)6A 20 Output Capacitance fT Cob VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz Base-to-Emitter Saturation Voltage VBE VCE=(--)5V, IC=(--)1A Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time ton tf Storage Time tstg typ Unit max 200* 15 MHz (300)210 pF (1.1)0.6 IC=(--)5mA, RBE=∞ IC=(--)50mA, RBE=∞ 1.5 V 2.5 V (--)160 V (--)140 V (--)140 V IE=(--)5mA, IC=0 See specified test circuit. (--)6 V (0.25)0.26 µs See specified test circuit. (0.53)0.68 µs See specified test circuit. (1.61)6.88 µs * : The 2SB817P / 2SD1047P are classified by 1A hFE as follows Rank D E hFE 60 to 120 100 to 200 Swicthing Time Test Circuit IB1 OUTPUT IB2 1Ω PW=20µs INPUT 20Ω 200VR 51Ω VCC=20V 1µF VBE= --2V 1µF 10IB1= --10IB2=IC=1A For PNP, the polarity is reversed. IC -- VCE --10 IC -- VCE 10 --7 --120mA --6 --80mA --5 --4 --40mA --3 --20mA --2 0m 8 2SD1047P A 120m 7 80mA 6 5 40mA 4 3 20mA 2 1 --1 IB=0 0 0 --5 --10 --15 --20 --25 --30 --35 Collector-to-Emitter Voltage, VCE -- V 0 5 10 15 20 25 30 2SD1047P VCE=5V Collector Current, IC -- A 6 --4 --3 --2 --1 40 IT02168 IC -- VBE 7 --5 35 Collector-to-Emitter Voltage, VCE -- V IT02167 2SB817P VCE= --5V --6 IB=0 0 --40 IC -- VBE --7 Collector Current, IC -- A 24 --20 A --160m Collector Current, IC -- A A 0m --2 4 Collector Current, IC -- A --8 9 0mA 200mA 160mA A 2SB817P --9 5 4 3 2 1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V --1.4 --1.6 IT02169 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE -- V 1.4 1.6 IT02170 No.6572-2/4 2SB817P / 2SD1047P f T -- IC 2SB817P VCE= --5V 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Collector Current, IC -- A 10 7 5 3 2 1.0 0.1 --10 IT02171 2 100 7 5 3 5 Collector Current, IC -- A hFE -- IC 2SD1047P VCE=5V 10 0.1 2 3 5 7 2 1.0 3 5 2 100 7 5 1000 7 5 3 2 100 3 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V --100 IT02175 2SB817P IC / IB=10 --10 7 5 3 2 --1.0 7 5 3 2 2 3 5 7 --1.0 2 2 3 3 Collector Current, IC -- A 5 7 --10 IT02177 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 IT02176 VCE(sat) -- IC 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 1.0 7 VCE(sat) -- IC 3 --0.1 7 5 --0.1 7 3 2SD1047P IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --1.0 IT02174 2SD1047P f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 2 10 Cob -- VCB 2 5 7 Collector Current, IC -- A 2SB817P f=1MHz 7 7 10 IT02172 5 7 --10 2 IT02173 1000 5 7 Cob -- VCB 2 3 100 2 2 2 1.0 2 3 7 --1.0 7 3 2 5 5 5 3 3 3 7 DC Current Gain, hFE 3 2 2 Collector Current, IC -- A 2SB817P VCE= --5V 5 DC Current Gain, hFE 2 1000 7 10 --0.1 2SD1047P VCE=5V 3 7 hFE -- IC 1000 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 5 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT02178 No.6572-3/4 VBE(sat) -- IC 5 2SB817P IC / IB=10 3 2 --10 7 5 3 2 --1.0 7 5 --0.1 2 3 5 7 2 --1.0 3 5 Collector Current, IC -- A 7 --10 IT02179 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SB817P / 2SD1047P 2SD1047P IC / IB=10 3 2 10 7 5 3 2 1.0 7 5 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A ASO 2 VBE(sat) -- IC 5 7 10 IT02180 PC -- Tc 140 2SB817P / 2SD1047P IC ICP 7 DC ope 10 1 ion 00m rat 5 1m s ms s Collector Dissipation, PC -- W Collector Current, IC -- A 10 3 2 1.0 7 5 3 2 5 7 2 3 80 60 40 0 100 2 Collector-to-Emitter Voltage, VCE -- V IT02181 10 100 20 2SB817P / 2SD1047P (For PNP minus sign is omitted) 0.1 120 5 7 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- °C 160 IT02182 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6572-4/4