Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings * 1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 7 V Peak collector current ICP 5 A Collector current IC 3 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : T or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ Unit 0.1 µA ICBO Collector to emitter voltage VCEO IC = 1mA, IB = 0 25 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio VCB = 10V, IE = 0 max Collector cutoff current *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h V MHz pF Pulse measurement FE1 Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 Marking Symbol TQ TR 1 Transistor 2SD1119 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 6 IB=7mA 2.0 0.2 1.6 5mA 4mA 1.2 3mA 0.8 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 1 0.3 Ta=75˚C 25˚C –25˚C 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) fT — IE 0.4 100 Collector output capacitance Cob (pF) VCB=6V Ta=25˚C 350 300 250 200 150 100 50 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 –3 Emitter current IE (A) –10 1 3 10 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) 600 VCE=2V 30 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 400 –1 0 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 2 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.03 3 VBE(sat) — IC IC/IB=30 0.1 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 40 Ta=75˚C 1 1mA 0 20 25˚C 5 6mA 0.4 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 100 Collector to base voltage VCB (V) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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