ETC 2SD1135B

2SD1135
Silicon NPN Triple Diffused
ADE-208-906 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
4
A
Collector peak current
I C(peak)
8
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1135
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
80
—
—
V
I C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
mA
VCB = 80 V, IE = 0
60
—
200
VCE = 5 V, IC = 1 A*2
hFE2
35
—
—
VCE = 5 V, IC = 0.1 A*2
Base to emitter voltage
VBE
—
—
1.5
V
VCE = 5 V, IC = 1 A*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
2
V
I C = 2 A, IB = 0.2 A*2
Gain bandwidth product
fT
—
10
—
MHz
VCE = 5 V, IC = 0.5 A*2
Collector output capacitance
Cob
—
40
—
pF
VCB = 20 V, IE = 0, f = 1 MHz
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SD1135 is grouped by h FE1 as follows.
2. Pulse test.
B
C
60 to 120
100 to 200
Maximum Collector Dissipation Curve
Area of Safe Operation
5
Collector current IC (A)
Collector power dissipation Pc (W)
60
40
20
(10 V, 4 A)
IC max (Continuous)
D
(33 V, 1.2 A)
2
(T C O
C
p
= er
25 at
1.0
°C ion
)
0.5
0.2
0.1
(80 V, 0.06 A)
0.05
0
2
50
100
Case temperature TC (°C)
150
1
2
5
10
20
50 100
Collector to emitter voltage VCE (V)
2SD1135
Typical Output Characteristics
PC = 40 W
4
160
140
100
80
60
3
40
2
20 mA
1
0.3
0.1
0.01
2
4
6
8
10
Collector to emitter voltage VCE (V)
1,000
300
100
TC = 75°C
25
–25
VCE = 5 V
30
10
3
1
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
10
Collector to emitter saturation voltage VCE (sat) (V)
0
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
VCE = 5 V
1.0
0.03
IB = 0
0
3
TC =
75°C
25
–25
TC = 25°C
Typical Transfer Characteristics
10
Collector current IC (A)
Collector current IC (A)
5
0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
1.4
Collector to Emitter Saturation Voltage
vs. Collector Current
10
3
1.0
IC = 10 IB
TC = 75°C
0.3
0.1
–25
0.03
25
0.01
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
10
3
2SD1135
Package Dimensions
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
TO-220AB
Conforms
Conforms
1.8 g
2SD1135
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5