2SD1141 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings (Ta = 25°C) Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 400 V ————————————————————– Collector to emitter voltage VCEO 300 V 1. Base 2. Collector (Flange) 3. Emitter ————————————————————– Emitter to base voltage VEBO 7 V ————————————————————– Collector current IC 6 A ————————————————————– Collector peak current iC(peak) 10 1 A ————————————————————– Collector power dissipation PC*1 40 2 3 2 W ————————————————————– Junction temperature Tj 150 °C 1 ————————————————————– Storage temperature Tstg –55 to °C +150 6 kΩ typ ————————————————————– Note: 1. Value at TC = 25°C. 450 Ω typ 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 400 — — V IC = 0.1 mA, IE = 0 ——————————————————————————————————————————— Collector to emitter sustain voltage VCEO(sus) 300 — — V IC = 3 A, PW = 50 µs, f = 50 Hz, L = 10 mH ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 50 mA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICEO — — 100 µA VCE = 300 V, RBE = ∞ ——————————————————————————————————————————— DC current transfer ratio hFE 500 — — VCE = 2 V, IC = 4 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 4 A, IB = 40 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — 2.0 V IC = 4 A, IB = 40 mA ——————————————————————————————————————————— Turn on time ton — 2.0 — µs IC = 4 A, IB1 = –IB2 = 40 mA ——————————————————————————————————————————— Turn off time toff — 23 — µs IC = 4 A, IB1 = –IB2 = 40 mA ——————————————————————————————————————————— See characteristics curves of 2SD1113 K . 2SD1141 K Maximum Collector Dissipation Curve Collector peak current PC (W) 60 40 20 0 50 100 Case temperature TC (°C) 150