Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification ■ Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings Unit 30 3 2 2.5 25 VEBO Peak collector current Collector current Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 5 V ICP 1.5 A IC 1 A 1:Base 2:Collector 3:Emitter 2SD1198A Emitter cutoff current ICBO IEBO Collector to base 2SD1198 voltage 2SD1198A Collector to emitter 2SD1198 voltage 2SD1198A Emitter to base voltage 1.0 C B Conditions ≈200Ω min typ max 100 VCB = 45V, IE = 0 100 VEB = 4V, IC = 0 VCBO IC = 100µA, IB = 0 VCEO IC = 1mA, IB = 0 VEBO IE = 100µA, IC = 0 *1 VCE = 10V, IC = 1A*2 Forward current transfer ratio hFE VCE(sat) IC = 1A, IB = 1mA*2 Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 1mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 100 30 Rank classification Rank hFE Q R Unit nA nA V 60 25 V 50 5 V 4000 40000 1.8 2.2 150 V V MHz *2 FE E VCB = 25V, IE = 0 Collector to emitter saturation voltage *1h 4.5±0.1 Internal Connection (Ta=25˚C) Symbol 2SD1198 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion current 1 V 50 Emitter to base voltage Collector cutoff 0.45±0.05 V 60 VCEO Parameter 4.1±0.2 0.55±0.1 VCBO ■ Electrical Characteristics 2.4±0.2 2.0±0.2 3.5±0.1 0. 7 0.4 0.85 (Ta=25˚C) Symbol Collector to 1.0 1.25±0.05 ● 2.5±0.1 1.5 R0.9 R0.9 R ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 6.9±0.1 1.5 Pulse measurement S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 1 Transistor 2SD1198, 2SD1198A VCE(sat) — IC 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 003 0.1 24 VCE=10V Collector output capacitance Cob (pF) Forward current transfer ratio hFE 1 3 10 Ta=75˚C 25˚C 104 –25˚C 103 102 IE=0 f=1MHz Ta=25˚C 20 16 12 8 4 0 0.1 0.3 1 3 10 1 3 10 30 IC/IB=1000 30 10 25˚C 3 Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 003 0.1 0.3 1 3 Collector current IC (A) Cob — VCB Collector current IC (A) 2 0.3 Collector current IC (A) hFE — IC 10 0.01 0.03 Ta=75˚C 1 Ambient temperature Ta (˚C) 105 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 100 Collector to base voltage VCB (V) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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