ETC 2SD1211R

Transistor
2SD1211
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB0987 (2SB987)
Unit: mm
5.9±0.2
4.9±0.2
●
High collector to emitter voltage VCEO.
Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.3
2.54±0.15
13.5±0.5
■ Absolute Maximum Ratings
0.7–0.2
0.7±0.1
+0.2
1
2
Symbol
Conditions
min
VCEO
IC = 0.1mA, IB = 0
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
hFE1*
VCE = 10V, IC = 150mA
130
50
hFE2
VCE = 5V, IC = 500mA
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA
Base to emitter saturation voltage
VBE(sat)
IC = 300mA, IB = 30mA
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
FE1
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
(Ta=25˚C)
Parameter
*h
0.45–0.1
1.27
Collector to emitter voltage
Forward current transfer ratio
+0.2
0.45–0.1
1.27
3.2
●
8.6±0.2
■ Features
typ
max
120
Unit
V
5
V
330
1
1.2
200
V
V
MHz
20
pF
Rank classification
Rank
R
S
hFE1
130 ~ 220
185 ~ 330
Note.) The Part number in the Parenthesis shows conventional part number.
1
Transistor
2SD1211
IC — VCE
VCE(sat) — IC
200
1.0
Collector current IC (mA)
0.8
0.6
0.4
0.2
160
IB=1.0mA
0.9mA
0.8mA
120
0.7mA
0.6mA
80
0.5mA
0.4mA
0.3mA
40
0.2mA
0.1mA
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
10
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.3
1
3
400
300
Ta=75˚C
25˚C
200
–25˚C
100
1
3
10
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03
IE=0
f=1MHz
Ta=25˚C
60
50
40
30
20
10
Single pulse
Ta=25˚C
3
ICP
1
t=10ms
IC
0.3
t=1s
0.1
0.03
0.01
0.003
0.001
30
100
Collector to base voltage VCB (V)
0.1
0.3
1
3
10
Collector current IC (A)
VCB=10V
Ta=25˚C
350
300
250
200
150
100
1
3
10
30
100
300
0
–1
–3
–10
–30
Emitter current IE (mA)
Area of safe operation (ASO)
Collector current IC (A)
Collector output capacitance Cob (pF)
0.3
Collector current IC (A)
0
2
0.1
10
10
1
50
Cob — VCB
3
3
fT — I E
500
0
0.01 0.03
10
80
1
10
400
Collector current IC (A)
70
12
30
IC/IB=10
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
0.1
10
600
IC/IB=10
0.01
0.01 0.03
8
IC/IB=10
hFE — IC
100
1
6
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
3
4
Transition frequency fT (MHz)
Collector power dissipation PC (W)
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
1.2
1000
Collector to emitter voltage VCE (V)
–100
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2001 MAR