ETC ACR300SG

ACR300SG33
ACR300SG33
Fast Turn-on Asymmetric Thyristor
Replaces April 2000 version, DS5081-2.2
DS5081-2.4 August 2000
APPLICATIONS
■ Capacitor Discharge
■ Pulse Power Applications
FEATURES
■ The ACR300SG33 is a high voltage asymmetric
thyristor which has exceptionally fast turn-on
characteristics.
KEY PARAMETERS
VDRM 3300V
IT(AV) 660A
ITSM 6500A
dVdt 3000V/µs
dI/dt 2000A/µs
ton 700ns
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak
Reverse Voltage
VRRM
V
3300
20
ACR300SG33
Lower voltage grades available.
Outline type code: G.
Fig. 1 See Package Details for further information
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
660
A
Double Side Cooled
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
IT(RMS)
RMS value
Tcase = 80oC
1040
A
Continuous (direct) on-state current
Tcase = 80oC
890
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
470
A
IT(RMS)
RMS value
Tcase = 80oC
745
A
Continuous (direct) on-state current
Tcase = 80oC
570
A
IT
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ACR300SG33
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
6
kA
VR = 0
180
kA2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
dc
-
0.042
o
Anode dc
-
0.070
o
Cathode dc
-
0.092
o
C/W
Double side
-
0.018
o
C/W
Single side
-
0.036
o
C/W
On-state (conducting)
-
150
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
o
Clamping force
6.0
8.0
kN
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Clamping force 7.0kN
with mounting compound
Thermal resistance - case to heatsink
C
Virtual junction temperature
C
C
VD
0.9 x 1600V
0.37 x 1600V
t
td
tr
IG
IG pk
10% IG pk
t
Fig.1 Turn-on time measurement
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ACR300SG33
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Maximum on-state voltage
IRRM/IDRM
Min.
Max.
Units
At 1000A peak, Tcase = 25oC
-
2.0
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
60
mA
dV/dt
Linear rate of rise of off-state voltage
To VD = 2000V, Gate open circuit, Tj = 125oC
3000
-
V/µs
dI/dt
Rate of rise of on-state current
From VDRM to 125A
Gate source 30V, 10Ω
Gate rise time = 100ns, Tj = 125˚C
-
2000
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC
-
1.19
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.81
mΩ
IL
Latching current
VD = 5V, Tj = 25˚C
-
600
mA
IH
Holding current
ITM = 500A, IT = 5A, Tj = 25˚C
-
300
mA
td
Delay time
VD = 3000V
Gate source = 30V, 10Ω
Gate rise time = 100ns
Tj = 25˚C
-
350
ns
Tj = 70˚C
-
-
ns
-
50
ns
Typ.
Max.
Units
VTM
tr
See Fig.1. Tj = 25 - 70˚C.
Rise time
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDWM = 12V, RL = 6Ω, Tcase = 25oC
-
5
V
IGT
Gate trigger current
VDWM = 12V, RL = 6Ω, Tcase = 25oC
-
500
mA
VFGM
Peak forward gate voltage
-
-
40
V
VRGM
Peak reverse gate voltage
-
-
10
V
IFGM
Peak forward gate current
-
-
20
A
PGM
Peak gate power
-
-
40
W
-
10
W
PG(AV)
Average gate power
Average time 10ms max
Forward
CURRENT CARRYING CAPABILITY AFTER CHIP SHORT CIRCUIT
In the event of a chip short-circuit due to excess anode-cathode
voltage, the device will handle a high continuous RMS fault
current without significant damage. Rating details are as follows:
Continuous current capability: 300A RMS, ac or dc in either
direction.
Conditions:
1. Device single or double side cooled.
2. Case temperature to be held at 200˚C or less.
3. A suitable high temperature clamp to be used.
4. Chip fault site resistance assumed to be 3mΩ ± 10%.
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ACR300SG33
CURVES
80
3500
Thermal impedance - junction to case, Rth(j-c) - ˚C/kW
Tj = 125˚C
Instantaneous current, IT - (A)
3000
2500
2000
1500
1000
500
0
0
0.5
1
1.5
2
2.5
3
Instantaneous voltage, VT - (V)
3.5
4
Fig.2 On-state characteristics
Anode side cooled
60
40
20
0
0.001
Double side cooled
1
0.1
Time - (s)
0.01
10
100
Fig.3 Transient thermal impedance - junction to case
1000
900
Double side cooled
Average current, IT(AV) - (A)
800
700
600
500
Anode side cooled
400
300
200
100
0
25
50
75
100
Case temperature, Tc - (˚C)
125
150
Fig.4 Average current rating vs temperature
4/6
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ACR300SG33
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø58.5 max
Ø34 nom
27.0
25.4
Ø1.5
Gate
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: G
5/6
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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