ETC AN4571

GDU 9X-XXXXX Series
GDU 9X-XXXXX Series
GTO Gate Drive Units
Application Note
Replaces March 1998 version, AN4571 - 5.1
AN4571-6.0 January 2000
This application note should be used in conjunction with individual Gate Drive Unit datasheets which contain electrical, timing and outline
information.
GTO GATE DRIVE UNITS
A range of Gate Drive Units (GDU) is available to control Dynex Semiconductor Gate Turn-Off Thyristors (GTO). These units provide
the recommended waveforms for reliable switching of GTOs and have the following features:■ Input signal to the GDU (to turn the GDU ON and OFF) or output
signal (that indicates the presence of GTO gate to cathode
negative voltage) can be specified for either opto-couplers or fibre
optics.
■ An output signal that monitors the GTO gate to cathode negative
voltage. This voltage is monitored at the GDU GTO gate output
connections or the GTO gate sense leads if they are wired to the
GDU.
■ At initial switch-on a safe start up is achieved by incorporating an
inhibit of GTO gate pulses until the power supplies stabilise.
■ Each power supply voltage is continuously monitored, if it falls
below a preset level an OFF signal is sent to the GTO and further
ON pulses are inhibited until the power supply recovers.
■ Adjustable inhibit of short ON pulses. This prevents the GTO
switching ON from signals that may be false.
■ Adjustable minimum ON pulse width. This ensures that when the
GTO is turned ON it is ON for a time that fully discharges the
snubber capacitor.
■ Adjustable minimum OFF pulse width. This ensures that the
GTO is turned OFF for longer than its' turn-off time.
GTO/GATE DRIVE RECOMMENDATIONS
Recommended Gate Drive Conditions
GTO
ITCM
(A)
IGQM
(A)
QGQM
(µC)
IFG
(A)
dIFG/dt
(A/µs)
IG(ON)
(A)
tw1(min)
(µs)
dIGQ/dt
(A/µs)
VRG(min)
(V)
VRG(max)
(V)
Recommended
Gate Drive
DGT304SE
700
120
700
20
20
2
4.5
15
2
16
GDU 91-202XX
DG306AE
600
190
1300
20
20
2
10
15
2
16
GDU 91-202XX
DG406BP
1000
420
3000
30
30
4
10
30
2
16
GDU 91-202XX
DG408BP
1000
420
3000
30
30
4
20
30
2
16
GDU 91-202XX
DGT409BCA
800
350
3600
30
30
4
20
30
2
15
GDU 91-202XX
DG646BH
2000
650
6600
30
30
7
20
40
2
16
GDU 90-204XX
DG648BH
2000
690
6000
30
30
7
20
40
2
16
GDU 90-204XX
DG758BX
3000
830 10000
40
40
8
10
40
2
16
GDU 90-203XX
DG856BW
3000
850 10500
40
40
10
20
40
2
16
GDU 90-207XX
DG858BW
3000
850 12000
40
40
10
20
40
2
16
GDU 90-207XX
DG858DW
3000
950 12500
40
40
10
20
40
2
18
GDU 90-207XX
1/9
GDU 9X-XXXXX Series
POWER CIRCUIT AND BLOCK DIAGRAM
Control card connector
V2
P.S.U. Terminals
R2
R1
V1
C1
C3
T1
GTO
T2
Gate
D1
0V
Cathode
L1
T3
ACR
C2
V3
R1 Adjusts On-state gate current - IG(ON)
R2 Adjusts Peak forward gate current - IFGM
L1 (When fitted) Adjusts Rate of rise of negative gate current - dIGQ/dt
Fig.1 GTO gate drive - GDU9X-2XXXX - simplified power circuit
Power supply unit
1. If L1 is fitted.
V3
Input
Contains adjustments for:No response pulse width
Minimum on-time
Minimum off-time
V2
V1
0V
Contains adjustments for:Turn-on IFG(MAX)
Turn-off dIGQ/dt1
IG(ON)
Gate
Fibre optics
Output
Terminal block for
GTO sense leads.
(If fitted).
Cathode
\V
Output on when
gate voltage | -8 | Volts
Control Card
Power Circuits
Gate Drive Unit
Fig.2 Gate drive block diagram
2/9
GTO
GDU 9X-XXXXX Series
GATE DRIVE INTERFACES
Customer Interface
Gate Drive Unit
+5V
I1
Plugs
1
2
3
4
Transmitter
0V
+10V
4
3
2
1
1mm Polymer
fibre optic cable
Receiver
0V
+5V
Plugs
4
3
2
1
Receiver
0V
1
2
3
4
1mm Polymer
fibre optic cable
Transmitter
0V
Transmitter - Hewlett Packard HFBR 1524
Receiver - Hewlett Packard HFBR 2524
Fig.3 Hewlett Packard versatile link interface
Customer Interface
Gate Drive Unit
+10V
Housings
Plugs
1
2
3
1
2
3
I1
1mm Polymer
fibre optic cable
Emitter
0V
Receiver
0V
+5V
Housings
Plugs
1
2
3
1
2
3
0V
Receiver
1mm Polymer
fibre optic cable
Emitter
0V
Emitter - HFE 4020 - 013
Receiver - HFD 3029 - 002
Fig.4 Honeywell sweetspot interface
3/9
GDU 9X-XXXXX Series
GTO GATE DRIVE V1 P.S.U. CURRENTS
12
A: GDU90-207XX
B: GDU90-203XX
C: GDU90-204XX
D: GDU91-202XX
11
A
10
9
B
V1 PSU current - (A)
8
C
7
6
5
D
4
3
2
1
0
0
20
40
60
Duty cycle (%)
Fig.5 V1 P.S.U. current vs duty cycle
4/9
80
100
GDU 9X-XXXXX Series
GTO GATE DRIVE V2 P.S.U. CURRENTS
1.4
A: GDU90-207XX
B: GDU91-202XX
B: GDU90-204XX
C: GDU90-203XX
D: GDU91-202XX
1.3
1.2
A
1.1
1.0
B
V2 PSU current - (A)
0.9
C
0.8
0.7
D
0.6
0.5
0.4
0.3
0.2
0.1
0
0
200
400
600
Frequency - (Hz)
800
1000
Fig.6 V2 P.S.U. current vs frequency
5/9
GDU 9X-XXXXX Series
GTO GATE DRIVE V3 P.S.U. CURRENTS
AB C
14
D
E
13
F
12
11
V3 PSU current - (A) Note 1
10
9
8
G
7
6
H
5
4
3
2
I
J
1
0
0
200
400
600
Frequency - (Hz)
800
Note 1: V3 current is that required for operation of the GTO at max. ITCM and Tj.
Fig.7 V3 P.S.U. current vs frequency
6/9
1000
A: DG858DW
B: DG858BW
C: DG856BW
D: DG758BX
E: DG646BH
F: DG648BH
G: DGT409BCA
H: DG406BP
H: DG408BP
I: DG306AE
J: DGT304SE
GDU 9X-XXXXX Series
GATE DRIVE QGQT LIMITS VS FREQUENCY
26000
A: GDU91-202XX
B: GDU90-204XX
C: GDU90-203XX
D: GDU90-206XX
E: GDU90-207XX
24000
22000
20000
Total turn-off gate charge QGQT - (µC)
18000
16000
14000
12000
10000
E
D
8000
C
6000
B
4000
A
2000
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Frequency - (100Hz)
Fig.8
7/9
GDU 9X-XXXXX Series
GUIDANCE FOR SELECTION OF GATE DRIVE UNIT
1.
2.
3.
Choose GTO Thyristor.
Select the appropriate GDU from the GTO/GDU recommendations, (see page 1).
Decide on input signal method and tw1 period, and enter the last two digits in the Gate Drive code: 01 HP Versatile link fibre optics:
02 Honeywell sweetspot fibre optics:
04 HP opto-coupler.
(tw1 = 10µs)
(tw1 = 10µs)
(tw1 = 10µs)
21 HP Versatile link fibre optics:
22 Honeywell sweetspot fibre optics:
24 HP opto-coupler.
(tw1 = 20µs)
(tw1 = 20µs)
(tw1 = 20µs)
GUIDANCE FOR POWER SUPPLY SPECIFICATION
1. From GTO datasheet recommendations for IG(ON) add 10% to
calculate the maximum current required from the V1 supply.
The average value of current could be lower for reduced duty
cycle operation. (See Fig.5, page 4).
2. Read the V2 supply current from Fig.6 (See page 5).
3. Read the maximum V3 supply current from Fig.7 (See page 6).
If the GTO is to be operated at lower current than the ITCM and/
or Tvj(max) then the V3 power supply current can be calculated as
follows:-
a. From the GTO turn-off gate charge vs rate of rise of reverse
gate current graph read QGQ for worst case requirements.
b. GDU QGQT is 2x GTO QGQ per pulse.
c. V3 power supply current is 2x GTO QGQ x Max. Frequency
(Hz) of operation.
4. The Power Supply Unit must have satisfactory isolation
between its' input and output in order to withstand the GTO
cathode voltage.
GENERAL NOTES
1. The drive unit mounting holes 4xØ4.4mm have a generous
clearance for mounting nuts or bolts and can be opened out by
end users to suit individual requirements.
2. The GDU circuits are referenced to the GTO cathode and hence
operate near to the GTO cathode voltage. Suitable spacing
around the GDU, and in the mounting method, should be
provided for the electrical isolation of the worst case GTO
cathode voltage.
3. The preferred mounting is with the heatsink fins vertical - to
improve cooling from the unit.
8/9
4. The GDU has two CMOS compatible inputs that are referenced
to the unit 0V line (connected to the GTO cathode). Connecting
these to 0V will turn the GTO OFF and inhibit further GTO ON
pulses. These could be used, for example, to turn the GTO OFF
if the GTO cathode heatsink temperature rise operated a
thermostat that shorted one of the inputs to 0V.
5. Fibre optic interface cables/components are also available to
suit Dynex Semiconductor Gate Drive Units.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
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© Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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