BULD1101ET4 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 1 DPAK TO-252 (Suffix "T4") ■ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 1100 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Parameter 12 V Collector Current 3 A Collector Peak Current (t p <5 ms) 6 A 1.5 A Base Current I BM Base Peak Current (t p <5 ms) P tot Total Dissipation at Tc = 25 o C T stg Storage Temperature Tj April 2003 Max. Operating Junction Temperature 3 A 35 W -65 to 150 o C 150 o C 1/7 BULD1101ET4 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-ambient Max Max o 3.57 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Test Conditions Emitter-BaseBreakdown I E = 1 mA Voltage (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA I C = 1 A I B = 200 mA I C = 1 A I B = 200 mA V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A DC Current Gain IC IC IC IC RESISTIVE LOAD Storage Time Fall Time I C = 2.5 A V BB(off) = -5 V I B1 = -IB2 = 0.5 A (see figure 1) Repetitive Avalanche Energy L = 2 mH I BR ≤ 2.5A E ar ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 = = = = Max. Unit 100 µA 24 V 450 Collector-Emitter Saturation Voltage ts tf Typ. 12 V CE(sat) ∗ h FE ∗ Min. V CE = 1100 V V 0.25 0.6 T j = 125 o C I B = 200 mA 250 mA V CE = 5 V 250 mA V CE = 5 V T j = 125 o C 2A V CE = 5 V 2A V CE = 5 V T j = 125 o C 20 23 6 4 6 V V 1.5 V 38 44 10 7 80 85 18 16 400 2 700 V CC = 125 V t P = 300µs C = 1.8 nF (see figure 2) 1 1.5 µs ns mJ BULD1101ET4 Safe Operating Area Derating Curve Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/7 BULD1101ET4 DC Current Gain Reverse Biased Safe Operating Area 4/7 Resistive Load Switching Times BULD1101ET4 Figure 1: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Energy Rating Test Circuit 5/7 BULD1101ET4 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 6/7 BULD1101ET4 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7