IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector–emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA Continental Device India Limited Data Sheet CMBT A05 max. 60 max. 60 max. max. max. A06 80 V 80 V V mA mW 4 500 250 min. 100 min. 100 MHz max. 0.25 V Page 1 of 3 CMBTA05 CMBTA06 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj max. max. max. max. max. max. max. THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient = Rth j–a 60 60 80 V 80 V 4 V 500 mA 250 mW –55 to +150 °C 150 °C CHARACTERISTICS (at TA = 25°C unless otherwise specified) CMBT A05 Collector–emitter breakdown voltage V(BR)CEO min. 60 IC = 1 mA; IB = 0 Emitter–base breakdown voltage V(BR)EBO min. IC = 0; IE = 100 mA Collector cut–off current ICEO max. VCE = 60 V; IB = 0 ICBO max. 0.1 VCB = 60 V; IE = 0 ICBO max. VCB = 80 V; IE = 0 Saturation voltages VCEsat max. IC = 100 mA; IB = 10 mA Base–emitter on voltage VBE(on) max. IC = 100 mA; VCE = 1 V D.C. current gain hFE min. IC = 10 mA; VCE = 1 V hFE min. IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT min. IC = 10 mA; VCE = 2 V Continental Device India Limited Data Sheet 500 K/W A06 80 V 4 0.1 V mA mA 0.1 mA 0.25 V 1.2 V 100 100 100 MHz Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3