ETC CSD313E

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
CSB507
CSD313
CSB507, CSD313
PNP PLASTIC POWER TRANSISTOR
NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
F
K
All dim insions in m m .
L
N
O
1 2 3
O
A
H
B
C
E
J
D
G
M
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 2A; IB = 0.2A
D.C. current gain
IC = 1A; VCE = 2V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Continental Device India Limited
Data Sheet
DIM
M IN.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
3
M A X.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
VCBO
VCEO
IC
Ptot
Tj
max.
max.
max.
max.
max.
60
60
3.0
30
150
V
V
A
W
°C
VCEsat
max.
1.0 V
hFE
min
max.
40
320
VCBO
VCEO
VEBO
max.
max.
max.
60 V
60 V
5.0 V
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CSB507, CSD313
Collector current
Collector current (Peak value)
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
IC
ICM
Ptot
Tj
Tstg
max.
3.0 A
max.
8.0 A
max.
30 W
max.
150 ºC
–65 to +150 ºC
THERMAL CHARACTERISTICS
From junction to case
Rth j–c
=
ICBO
ICEO
max.
max.
0.1 mA
5.0 mA
IEBO
max.
1.0 mA
VCEO
VCBO
VEBO
min.
min.
min.
60 V
60 V
5.0 V
VCEsat*
max.
1.0 V
VBE(on)*
max.
1.5 V
hFE*
min.
40
hFE*
min.
max.
40
320
fT
typ.
4.17 °C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 20V
IB = 0; VCE = 60V
Emitter cut-off current
IC = 0; VEB = 4V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 1A; VCE = 2V
D.C. current gain
IC = 0.1A; VCE = 2V
IC = 1A; VCE = 2V**
Transition frequency
IC = 500 mA; VCE = 5V
8 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2.0%.
** hFE classification: C: 40-80 D: 60-120 E: 100-200 F: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
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