ETC CTN635

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-237 Plastic Package
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier.
E B
1 = COLLECTOR
2 = BASE
3 = EMITTER
C
1 2 3
ABSOLUTE MAXIMUM RATINGS
Ratings
Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9
CTN636 CTN638 CTN640
Units
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5
-
V
Collector Current – Continuous
IC
-
1
-
A
Peak
ICM
-
1.5
-
A
Base Current – Continuous
IB
-
100
-
mA
Peak
IBM
-
200
-
mA
Power Dissipation @ Ta=25ºC
PD
Derate above 25°C
Power Dissipation @ Tc=25ºC
PD
Derate above 25°C
Operating And Storage Junction
Temperature Range
Continental Device India Limited
-
750
-
mW
-
6
-
mW/°C
-
2.5
-
W
20
-
mW/°C
Tj ,Tstg
Data Sheet
–55 to +150
ºC
Page 1 of 4
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max. Unit
Collector-Emitter Voltage
IC=10mA, IB =0
635, 636
637, 638
639, 640
BVCEO
45
60
80
-
-
V
V
V
Collector-Base Voltage
IC=100µA, I E=0
635,
637,
639,
BVCBO
45
60
100
-
-
V
V
V
BVEBO
5
-
-
V
ICBO
-
-
100
10
Base Emitter On Voltage
IC=500mA, V CE=2V
VBE(on)*
-
-
1.0 V
Collector-Emitter
(Sat) Voltage
IC=500mA, IB =50mA
VCE(sat)*
-
-
0.5 V
hFE
25
40
40
25
-
160
160
-
Cib
-
50
110
-
pF
pF
636
638
640
Emitter-Base Voltage
IE=10µA, IC=0
Collector Cutoff Current
VCB =30V, IE =0
VCB =30V, IE =0, Ta=125°C
D.C. Current Gain
IC=5mA, VCE=2V
IC=150mA, VCE=2V*
635, 636
637, 638
639, 640
IC=500mA, VCE=2V*
DYNAMIC CHARACTERISTICS
Input Capacitance
NPN
VBE=0.5V, IC=0,
PNP
f=1MHz
nA
µA
Input Capacitance
VCB =10V, IC=0,
f=1MHz
NPN
PNP
C ob
-
7
9
-
pF
pF
Transition Frequency
IC=10mA, V CE=5V,
f=35MHz
NPN
PNP
fT
-
130
50
-
MHz
MHz
* Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Continental Device India Limited
Data Sheet
Page 2 of 4
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
DC Current Gain
hFE - Current Gain
VCE = 2V
IC Collector Current (mA)
fT - Current Gain Bandwidth
Product (MHz)
Current Gain Bandwidth Product
VCE = 2V
IC Collector Current (mA)
Saturation and On Voltages
VBEsat at IC/IB = 10
Voltage (v)
VBEon at V CE = 2V
VCEsat at IC /IB = 10
IC Collector Current (mA)
Continental Device India Limited
Data Sheet
Page 3 of 4
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 4 of 4