Central CZT7120 TM Semiconductor Corp. PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. SOT-223 CASE MAXIMUM RATINGS: (TA=250C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation UNITS 120 V VCEO 70 V VEBO 7.0 V IC PD 3.0 A 2.0 W TJ, Tstg -65 to +150 Operating and Storage Junction Temperature Thermal Resistance ΘJA 0 0 62.5 C C/W ELECTRICAL CHARACTERISTICS: (TA=250C) SYMBOL TEST CONDITIONS ICBO IEBO VCB=80V BVCBO IC=50µA IC=10mA 120 156 V 70 118 V IE=50µA IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V 7.0 24 V BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE hFE fT MIN TYP VEB=5.0V MAX UNITS 1.0 µA 1.0 µA 295 500 mV 0.93 1.1 V VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA 100 210 100 162 VCE=5.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz 40 65 8.0 300 MHz R0 (14-March 2002) Central TM Semiconductor Corp. CZT7120 PNP SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector R0 (14-March 2002)