RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s RF designers. It features our complete range of RF products, from low- to high-power signal conditioning, organized by application and function, and with a focus on design-in support. When it comes to RF, the first thing on the designer's mind is to meet the specified performance. NXP brings clarity to every aspect of your design challenge, so you can unleash the performance of your RF and microwave designs. NXP delivers a portfolio of high-performance RF technology that allows you to differentiate your product – no matter where in the RF world you are. That’s why customers trust us with their mission-critical designs. Whether it’s LDMOS and GaN for high-power RF applications or Si and SiGe:C BiCMOS for your small-signal needs, we’ve got you covered. Our broad portfolio of far-reaching technologies gives you the freedom to design with confidence. Shipping more than four billion RF products annually, NXP is a clear industry leader in High Performance RF. From satellite receivers, cellular base stations, and broadcast transmitters to ISM (industrial, scientific, medical) and aerospace and defense applications, you will find the High Performance RF products that will help you realize a clear advantage in your products, your reputation, and your business. So if you're looking to improve your RF performance, design a highly efficient signal chain, or break new ground with an innovative ISM application, NXP will help you unleash the performance of your next-generation RF and microwave designs. 4 NXP Semiconductors RF Manual 16th edition What’s new? This RF Manual provides updated information on RF applications that are grouped as follows: wireless and broadband communication infrastructure, TV and satellite, portable devices, automotive, ISM, and aerospace and defense. We describe in detail the new developments in our core technologies, QUBiC4 (SiGe:C) and LDMOS. We have also added GaN technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next-generation wireless communication systems. New products include GaN power amplifiers, a complete line of overmolded plastic (OMP) RF power transistors and MMICs, and our eighth generation LDMOS transistors (Gen8). Next-generation devices and improved products include GPS LNAs, medium power amplifiers, IF gain blocks, satellite LNB ICs and CATV modules. Our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of amplifiers (low noise, variable gain, medium power, and high power Doherty amplifiers), mixers, IQ modulators and synthesizers, so you can build a highly efficient signal chain for transmit line-ups and receive chains. The Design Support section is updated and includes all available tools, documents, materials and links that ease the design-in of our products. We’re relentless in our commitment to RF innovation, and have the infrastructure and insight to inspire confidence in your performance-critical applications. We bring focus to complex RF problems so you are free to push the performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise. What you are reading is more than a guide, it's a tool that lets you unleash your RF performance: the 16th edition of the RF Manual. Kind regards, John Croteau Sr. Vice President & General Manager Business Line High Performance RF RF Manual web page www.nxp.com/rfmanual NXP Semiconductors RF Manual 16th edition 5 Contents 1 Products by application 1.1 Wireless communication infrastructure_______________________________________________________________________________________________________________________________________________________________ 9 1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________ 9 1.1.2 Point-to-point communications ________________________________________________________________________________________________________________________________________________________________ 12 1.1.3 Repeater ___________________________________________________________________________________________________________________________________________________________________________________________________ 14 Broadband communication infrastructure _________________________________________________________________________________________________________________________________________________________15 1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________ 15 1.2.2 CATV electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________ 16 TV and satellite____________________________________________________________________________________________________________________________________________________________________________________________________ 17 1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________ 17 1.3.2 Basic TV tuner ___________________________________________________________________________________________________________________________________________________________________________________________ 19 1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components ______________________________________________________________________________________ 20 1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter __________________________________________________21 1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV ________________________________________________________________________________________________________ 22 1.3.6 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 23 Portable devices _________________________________________________________________________________________________________________________________________________________________________________________________ 25 1.4.1 GPS __________________________________________________________________________________________________________________________________________________________________________________________________________ 25 1.4.2 FM radio ___________________________________________________________________________________________________________________________________________________________________________________________________26 1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz _______________________________________________________________________________________27 1.4.4 Cellular receiver ________________________________________________________________________________________________________________________________________________________________________________________28 1.4.5 802.11n DBDC and 802.11ac WLAN ________________________________________________________________________________________________________________________________________________________ 29 1.4.6 Generic RF front-end _______________________________________________________________________________________________________________________________________________________________________________ 30 Automotive __________________________________________________________________________________________________________________________________________________________________________________________________________31 1.5.1 SDARS & HD radio ______________________________________________________________________________________________________________________________________________________________________________________ 31 1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________32 1.5.3 Tire pressure monitoring system _____________________________________________________________________________________________________________________________________________________________ 33 1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _______________________________________________________________________________________________________________________ 34 Industrial, scientific & medical (ISM)__________________________________________________________________________________________________________________________________________________________________ 35 1.6.1 Broadcast / ISM _______________________________________________________________________________________________________________________________________________________________________________________ 35 1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee ______________________________________________________________________________________________________________36 1.6.3 RF microwave furnace application____________________________________________________________________________________________________________________________________________________________37 1.6.4 RF plasma lighting ___________________________________________________________________________________________________________________________________________________________________________________ 38 1.6.5 Medical imaging _______________________________________________________________________________________________________________________________________________________________________________________39 1.7 Aerospace and defense __________________________________________________________________________________________________________________________________________________________________________ 40 1.7.1 Microwave products for L- and S-band radar and avionics applications ________________________________________________________________________________________________ 40 1.2 1.3 1.4 1.5 1.6 9 2 Focus applications, products & technologies 2.1 Wireless communication infrastructure_____________________________________________________________________________________________________________________________________________________________ 42 2.1.1 Build a highly efficient signal chain with RF components for transmit line-ups and receive chains ________________________________________________________42 2.1.2 Digital wideband VGAs with high linearity & flexible current settings ___________________________________________________________________________________________________ 44 2.1.3 Doherty amplifier technology for state-of-the-art wireless infrastructure ______________________________________________________________________________________________ 46 2.1.4 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 _____________________________________________________________________________ 48 Broadband communication infrastructure ________________________________________________________________________________________________________________________________________________________ 49 2.2.1 Connecting people, protecting your network : NXP's CATV C-family for the Chinese SARFT standard_________________________________________________49 2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ___________________________________________________________________________________52 TV and satellite___________________________________________________________________________________________________________________________________________________________________________________________________ 54 2.3.1 LNAs with programmable gain & bypass option for improved tuner performance _______________________________________________________________________________ 54 2.3.2 Complete satellite portfolio for all LNB architectures_____________________________________________________________________________________________________________________________ 56 2.3.3 VSAT, 2-way communication via satellite_________________________________________________________________________________________________________________________________________________ 58 2.3.4 Low noise LO generators for microwave & mmWave radios ___________________________________________________________________________________________________________________ 60 Portable devices __________________________________________________________________________________________________________________________________________________________________________________________________ 61 2.4.1 The best reception of GNSS signals with the smallest footprint ______________________________________________________________________________________________________________ 61 Industrial, scientific & medical ___________________________________________________________________________________________________________________________________________________________________________ 63 2.5.1 Medical applications driven by RF power________________________________________________________________________________________________________________________________________________ 63 2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 64 2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function ____________________________________________________________________________________________________________________________ 65 2.5.4 Building on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 66 2.5.5 Digital broadcasting at its best _______________________________________________________________________________________________________________________________________________________________ 68 2.5.6 Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions ______________________________________________________69 Technology __________________________________________________________________________________________________________________________________________________________________________________________________________70 2.6.1 The first mainstream semiconductor company to offer GaN products ___________________________________________________________________________________________________70 2.2 2.3 2.4 2.5 2.6 6 NXP Semiconductors RF Manual 16th edition 42 2.6.2 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________71 2.6.3 Looking for a leader in SiGe:C? You just found us! __________________________________________________________________________________________________________________________________72 2.6.4 High-performance, small-size packaging enabled by NXP's leadless package platform and WL-CSP technology ________________________________ 74 3 Products by function 75 3.1 New products ______________________________________________________________________________________________________________________________________________________________________________________________________75 3.2 RF diodes ____________________________________________________________________________________________________________________ 78 3.2.1 Varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________78 3.2.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________79 3.2.3 Band-switch diodes __________________________________________________________________________________________________________________________________________________________________________________81 3.2.4 Schottky diodes ________________________________________________________________________________________________________________________________________________________________________________________81 3.3 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 82 3.3.1 Wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 82 3.4 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 85 3.4.1 RF MMIC amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 85 3.4.2 Wireless infrastructures ICs _____________________________________________________________________________________________________________________________________________________________________ 88 3.4.3 Satellite LNB RF ICs _________________________________________________________________________________________________________________________________________________________________________________ 89 3.4.4 Low-noise LO generators for VSAT and general microwave applications ______________________________________________________________________________________________ 89 3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 90 3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 90 3.5.2 MOSFETs __________________________________________________________________________________________________________________________________________________________________________________________________91 3.6 RF Modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 93 3.6.1 CATV push-pulls ______________________________________________________________________________________________________________________________________________________________________________________93 3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________93 3.6.3 CATV power doublers ______________________________________________________________________________________________________________________________________________________________________________94 3.6.4 CATV optical receivers _____________________________________________________________________________________________________________________________________________________________________________94 3.6.5 CATV reverse hybrids _______________________________________________________________________________________________________________________________________________________________________________94 3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 95 3.7.1 RF power transistors for base stations ____________________________________________________________________________________________________________________________________________________95 3.7.2 RF power transistors for broadcast / ISM applications____________________________________________________________________________________________________________________________ 99 3.7.3 RF power transistors for aerospace and defense __________________________________________________________________________________________________________________________________ 100 3.7.4 Gallium Nitride (GaN) RF power amplifiers ____________________________________________________________________________________________________________________________________________ 101 3.8 Wireless microcontroller chipsets and modules ______________________________________________________________________________________________________________________________________________101 4 Design support 102 4.1 4.2 4.3 4.4 4.5 4.6 Knowing NXP’s RF portfolio _____________________________________________________________________________________________________________________________________________________________________________102 Product selection on NXP.com _________________________________________________________________________________________________________________________________________________________________________102 Product evaluation ____________________________________________________________________________________________________________________________________________________________________________________________102 Additional design-in support ____________________________________________________________________________________________________________________________________________________________________________103 Application notes ______________________________________________________________________________________________________________________________________________________________________________________________103 Simulation models _____________________________________________________________________________________________________________________________________________________________________________________________104 4.6.1 Simulation models for RF power devices _______________________________________________________________________________________________________________________________________________104 4.6.2 Simulation models for RF bipolar wideband transistors_________________________________________________________________________________________________________________________105 4.6.3 Simulation models for RF MOSFET transistors _______________________________________________________________________________________________________________________________________106 4.6.4 Simulation models for RF varicap diodes _______________________________________________________________________________________________________________________________________________106 4.6.5 Simulation models for RF MMIC amplifiers ____________________________________________________________________________________________________________________________________________ 107 5 Cross-references & replacements_______________________________________________________108 5.1 Cross-references: manufacturer types versus NXP types ______________________________________________________________________________________________________________________________ 108 5.2 Cross-references: NXP discontinued types versus NXP replacement types __________________________________________________________________________________________________ 117 6 Packing quantities per package with relevant ordering code _____________________________ 119 6.1 Packing quantities per package with relevant ordering code _________________________________________________________________________________________________________________________ 119 6.2 Marking codes ___________________________________________________________________________________________________________________________________________________________________________________________________122 7 Abbreviations _________________________________________________________________________124 8 Contacts and web links ________________________________________________________________125 9 Product index _________________________________________________________________________126 NXP Semiconductors RF Manual 16th edition 7 8 NXP Semiconductors RF Manual 16th edition 1. Products by application 1.1 Wireless communication infrastructure Base stations (all cellular standards and frequencies) Products by application 1.1.1 See also brochure: 'Your partner in Mobile Communication Infrastructure design', NXP document number 9397 750 16837. Application diagram DPD CFR DUC DDC Power Amplifier DVGA RF-BP PLL VCO Dual DAC 0 HPA 90 Transmitter Q IF-SAW JEDEC IF MPA DVGA Mixer+LO Tower Mounted Amplifier Tx Att. ADC LO Duplexer Digital Front End (JEDEC) Interface OBSAI / CPRI Digital Baseband JEDEC Interface IQ-Modulator I JEDEC Interface RF-SAW Dual ADC Clock Generator Jitter Cleaner BP or LP Dual DVGA Data Converter IF-SAW Dual Mixer RF Small Signal PLL VCO RF Power LNA +VGA Rx LNA TX / RX1 µC RX2 Filter Unit LNA+VGA Micro Controller The block diagram above shows transmit (upper part, Tx) and receive (lower part, Rx) functions of a base station, and includes the Tx feedback function (middle part, Tx feedback). The signals generated in the "Digital Baseband & Control" block follow the requirements of the air-interface standard. These signals are interfaced to the DAC via serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain. Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals are fed to the VGA to control the power level. An additional band-pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer. Directly after the final-stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF mixer. This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first fed to the VGA to control the power level, and after band-pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used to send the digital signals to the baseband processor. At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received signals. Band-pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low-pass filtering is used before the ADC to remove the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC. The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second receiver, called a diversity receiver. NXP Semiconductors RF Manual 16th edition 9 Recommended products Function Product Driver Driver/final MMIC HPA Final Integrated Doherty fmin (MHz) fmax (MHz) P1dB (W) Matching Package Type 700 2200 10 - SOT1179 2110 2170 40 I/O SOT1121 BLP7G22-10* BLF6G22L(S)-40P 2500 2700 40 I/O SOT1121 BLF6G27L(S)-40P 2000 2200 60 I/O SOT1212 BLM7G22S-60PB(G)* 700 1000 160 - SOT467 BLF6H10L(S)-160 700 1000 200 I/O SOT1244C 700 1000 270 I/O SOT1244C BLF8G10LS-270GV 850 960 300 I/O SOT539 BLF8G10L(S)-300P* 900 1000 140 O SOT1224 BLP7G09S-140P(G)* 920 960 160 I/O SOT502 BLF8G10L(S)-160* 920 960 250 I/O SOT502 1800 1900 260 I/O SOT539B BLF7G20LS-260A* BLF7G20L(S)-250P BLF8G10LS-200GV BLF7G10L(S)-250 1805 1880 250 I/O SOT539 2000 2200 160 I/O SOT502B BLF7G22L(S)-160* 2000 2200 200 I/O SOT1244C BLF8G22LS-200GV* 2000 2200 270 I/O SOT1244C BLF8G22LS-270GV* 2500 2700 100 I/O SOT502 BLF7G27L(S)-100 2500 2700 140 I/O SOT502 BLF7G27L(S)-140 3400 3600 100 I/O SOT502 BLF6G38(LS)-100 2010 2025 50 O SOT1130 BLD6G21L(S)-50 * Check status in section 3.1, as this type is not yet released for mass production Product highlight: BLF8G10LS-160 160 W LDMOS power transistor for base W-CDMA base station and multi-carrier applications at frequencies from 920 to 960 MHz. Features ` ` ` ` ` ` ` ` ` 10 NXP Semiconductors RF Manual 16th edition Excellent ruggedness High efficiency Low R th providing excellent thermal stability Designed for broadband operation (920 to 960 MHz) Lower output capacitance for improved performance in Doherty applications Low memory effects for excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Discrete attenuator Function Product RF diode PIN diode Product RF transistor SiGe:C transistor LNA (low noise amplifier) Package SOT753 SOT753 Various Type BAP64Q BAP70Q BAP64^ Package Type BFU725F/N1 BFU690F BFU730F BFU760F BFU790F BGU7051 BGU7052 BGU7053 BGU7060 BGU7061 BGU7062 BGU7063 SOT343F SOT650 MMIC SiGe:C MMIC SOT1301 Function Single VGA (variable-gain amplifier) Product Function Dual VGA (variable-gain amplifier) Product Function Product MPA (medium power amplifier) Function Dual mixer MMIC MMIC MMIC Product MMIC Function Product PLL + VCO MMIC (LO generator) Function IQ modulator Product MMIC Gain range 31 dB Gain range 24 dB 28 dB PL (1dB) @ 940 MHz 24 dBm 28 dBm 25 dBm 28 dBm 30 dBm Package SOT617 Package SOT617 Package SOT89 SOT908 Type BGA7210 BGA7204 Type BGA7350 BGA7351 Type BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 Frequency 0.7 - 1.2 GHz 1.7 -2.7 GHz Package Noise 131 dBc/Hz @ 1 MHz offset @ 5.3 GHz Package Type SOT617 BGX7300* Package Type BGX7100 BGX7101 Output power 0 dBm 4 dBm SOT1092 SOT616 Products by application Function Type BGX7220 BGX7221 * Check status in section 3.1, as this type is not yet released for mass production for mass production ^ SOD523, SOD323, SOT23 & SOT323 Product highlight: Digital VGAs BGA7204 & BGA7210 These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power (23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no connection crosses simplifies design and decreases footprint by 25%. The unique power-save mode can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. Features ` Internally matched for 50 Ω - BGA7204 = 0.4 to 2.75 GHz - BGA7210 = 0.7 to 3.8 GHz ` High maximum power gain - BGA7204 = 18.5 dB - BGA7210 = 30 dB ` High output third-order intercept, IP3O - BGA7204 = 38 dB - BGA7210 = 39 dB ` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit) ` Fast switching power-save mode (power-down pin) ` Digitally controlled current setting from 120 to 195 mA with an optimum at 185mA (BGA7210 only) ` Simple control interfaces (SPI) ` ESD protection on all pins (HBM 4 kV; CDM 2 kV) NXP Semiconductors RF Manual 16th edition 11 1.1.2 Point-to-point communications Application diagram INDOOR UNIT POWER SUPPLY OUTDOOR UNIT PLL VCO 0 MPA VGA IF VGA PA MPA BPF 90 BUF DIGITAL SIGNAL PROCESSOR REF MPX PMU PLL VCO 0 90 ANALOG VGA VGA to/from IDU MPX REF PMU SYNTH PLL ANTENNA PLL IF LNA LNA LNA LPF VGA VGA DATA INTERFACE brb406 Recommended products Indoor unit Function Product Single VGA (variable-gain amplifier) Function MMIC Product Dual VGA (variable-gain amplifier) Function MMIC Product MPA (medium power amplifier) Function MMIC Product IQ modulator MMIC Gain range 23 dB 31 dB Gain range 24 dB 28 dB PL (1dB) @ 940 MHz 24 dBm 28 dBm 25 dBm 28 dBm 30 dBm Output power 0 dBm 4 dBm Package SOT617 Package SOT617 Package SOT89 SOT908 Type Function Product Package BGA7202 BGA7204 Type IF gain block MMIC MMIC Generalpurpose wideband amplifiers IF BGA7350 BGA7351 Type Function BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 Product Package SOT891 SOT650 RF MMIC SiGe:C MMIC SOT1301 LNA Package Type SOT616 BGX7100 BGX7101 SiGe:C transistor NXP Semiconductors RF Manual 16th edition SOT343F RF transistor Wideband transistor 12 SOT363 SOT343R SOT143R Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BGU7003 BGU7051 BGU7052 BGU7053 BGU7060 BGU7061 BGU7062 BGU7063 BFU725F/N1 BFU710F BFU730F BFG425W BFG424W BFG325/XR Outdoor unit Single VGA (variablegain amplifier) Function MPA (medium power amplifier) Function Buffer Function LNA Function Product Gain range Package Type BGA7210 MMIC 31 dB SOT617 BGA7204 Product MMIC PL (1dB) @ 940 MHz 24 dBm 28 dBm 25 dBm 28 dBm 30 dBm Product RF transistor SiGe:C transistor SOT908 SOT343F Package SiGe:C transistor Product IF gain block SOT89 Package Product RF transistor Package SOT343F Package MMIC SOT363 IF MMIC Generalpurpose wideband amplifiers Type BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 Type BFU725F/N1 BFU730F BFU760F BFU790F Type BFU725F/N1 BFU730F BFU760F BFU790F Function Dual VGA (variablegain amplifier) Function PLL + VCO (LO generator) Function Oscillator Product Gain range Package 24 dB MMIC Type BGA7350 SOT617 28 dB Product MMIC Noise Package Type -131 dBc/Hz @ 1 MHz offset @ 5.3 GHz SOT617 BGX7300* Package Type BFG424W BFG425W BFU725F/N1 BFU730F BFU760F BFU790F Product RF transistor BGA7351 Wideband transistor SOT343R SiGe:C transistor SOT343F Products by application Function * Check status in section 3.1, as this type is not yet released for mass production NXP BTS Tx component demonstrator board Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Product highlight: BGA7350 MMIC variable-gain amplifier The BGA7350 MMIC is a dual independent digitally controlled IF variable-gain amplifier (VGA) operating from 50 to 250 MHz. Each IF VGA amplifies with a gain range of 24 dB and, at its maximum gain setting, delivers 17 dBm output power at 1 dB gain compression with superior linear performance. The BGA7350 is optimized for a differential gain error of less than ±0.1 dB for accurate gain control and has a total integrated gain error of less than ±0.4 dB. It is housed in a 32-pin leadless HVQFN package (5 x 5 mm). Features ` Dual independent digitally controlled 24 dB gain range VGAs, with 5-bit control interface ` 50 to 250 MHz frequency operating range ` Gain step size: 1 dB ± 0.1 dB ` 18.5 dB power gain ` Fast gain stage switching capability ` 17 dBm output power at 1 dB gain compression ` 5 V single supply operation with power-down control ` Logic-level shutdown control pin reduces supply current ` ESD protection at all pins ` Unconditionally stable NXP Semiconductors RF Manual 16th edition 13 1.1.3 Repeater Application diagram Dual mixer Tx0 PA mixer Dual DAC Dual ADC I-DAC LPF VGA LPF VGA Dual mixer mixer LNA RF SAW LNA RF SAW LNA Rx0 ADC DDC/ DUC Filtering Tx1 PA Dual VGA LPF LPF Rx1 Q-DAC ADC mixer mixer PLL VCO Clock Recovery jitter cleaner LO Signal brb631 Recommended products Function Product fmin (MHz) fmax (MHz) P1dB (W) Matching 700 2300 700 1450 1800 2110 2500 3400 2010 2110 2200 2700 1000 1550 2000 2170 2700 3800 2025 2170 10 10 45 40 45 40 40 50 50 50 I I I/O I/O I/O I/O I/O O I/O Driver Driver/final HPA Integrated Doherty Function Product MPA (medium power amplifier) Function PL (1 dB) @ 940 MHz 24 dBm 28 dBm 25 dBm 28 dBm 30 dBm MMIC Product Dual VGA (variable-gain amplifier) Function Gain range 24 dB MMIC 28 dB Product Dual mixer Function Frequency range 1.7 - 2.7 GHz 0.7 - 1.2 GHz MMIC Product Package SOT1179 SOT975 SOT608 SOT1135 SOT608 SOT1121 SOT1121 SOT502 SOT1130 SOT1130 Package SOT908 Package Type BGA7350 SOT617 BGA7351 Package Type BGX7220 BGX7221 SOT1092 Package Type BGU7051 BGU7052 BGU7053 BGU7060 BGU7061 BGU7062 BGU7063 SiGe:C MMIC SOT1301 Function Product PLL + VCO (LO generator) MMIC BLP7G22-10* BLF6G27-10(G) BLF6G10(S)-45 BLF6G15L(S)-40RN BLF6G20(S)-45 BLF6G22L(S)-40P BLF6G27L(S)-40P BLF6G38(LS)-50 BLD6G21L(S)-50 BLD6G22L(S)-50 Type BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 SOT89 SOT650 LNA Type Noise Package Type -131 dBc/Hz @ 1 MHz offset @ 5.3 GHz SOT617 BGX7300* * Check status in section 3.1, as this type is not yet released for mass production Product highlight: BGX7221 MMIC dual down-mixer The BGX7221 combines a pair of high performance, high linearity down-mixers for use in receivers that have a common local oscillator used with, for example, main and diversity paths. The device covers frequency bands from 1700 to 2700 MHz with an extremely flat behavior. 14 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` ` ` ` ` ` 8.5 dB conversion gain over all bands 13 dBm input, 1 dB compression point 25.5 dBm input third-order intercept point 10 dB (typ) small signal noise figure Integrated active biasing Single +5 V supply operation Power-down per mixer with hardware control pins Low bias current in power-down mode Matched 50 Ω single-ended RF and LO input impedances ESD protection at all pins 1.2 Broadband communication infrastructure 1.2.1 CATV optical (optical node with multiple out-ports) RF power amplifier Products by application Application diagram duplex filter coax out port 1 fiber in RF forward receiver RF preamplifier splitter coax out port 2 coax out port 3 coax out port 4 bra852 Recommended products Function RF forward receiver Product Forward path receiver Function Product Frequency Power doubler 870 MHz RF pre-amplifier Frequency 870 MHz 870 MHz Push-pulls 1 GHz Function RF power amplifier Product Power doublers Frequency 870 MHz 1 GHz Package SOT115 SOT115 Type BGO807C BGO807CE Gain (dB) 18.2 - 18.8 18 - 19 21 - 22 23 - 24.5 27 - 28.5 Type BGD812 BGY885A BGY887 CGY1043 CGY1047 Gain (dB) 22 - 24 24 - 26 22 - 23.5 26.5 - 28 Type CGD942C CGD944C CGD1042Hi CGD1046Hi Product highlight: BGO807CE optical receiver The BGO807CE is an integrated optical receiver module that provides high output levels and includes an integrated temperaturecompensated circuitry. In your optical node design, BGO807CE enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital, our BGO807CE is the perfect fit. Features ` ` ` ` ` ` ` Excellent linearity Low noise Excellent flatness Standard CATV outline Rugged construction Gold metallization ensures excellent reliability High optical input power range NXP Semiconductors RF Manual 16th edition 15 1.2.2 CATV electrical (line extenders) Application diagram duplex filter RF preamplifier RF power amplifier duplex filter coax in coax out RF reverse amplifier bra505 Recommended products Function Product Frequency 550 MHz 750 MHz RF pre-amplifier 870 MHz Push-pulls 1003 MHz Function Product RF reverse amplifier Reverse hybrids Frequency 5-75 MHz 5-120 MHz 5-200 MHz Gain (dB) 33.5 - 35.5 33.2 - 35.2 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 21 - 22.5 23 - 24.5 27 - 28.5 29 - 31 32 - 34 Type BGY588C BGE788C BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041 CGY1043 CGY1047 CGY1049 CGY1032 Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5 Type BGY68 BGY66B BGY67A Function Product Frequency 750 MHz 870 MHz RF power amplifier Power doublers 1003 MHz Gain (dB) 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18.2 - 18.8 19.7 - 20.3 22 - 23 24 - 26 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26 - 28 22 - 24 23.5 - 25.5 26 - 28 All available in SOT115 package Product highlight: CGD1046Hi Capable of supporting high output power, the CGD1046Hi is primarily designed for use in fiber deep-optical-node applications (N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended temperature range, high-power overstress capabilities in case of surges, and high ESD levels. The result is a low cost of ownership, with durability and superior ruggedness. 16 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` ` ` ` ` ` ` ` High output power High power gain for power doublers Extremely low noise Dark Green products GaAs HFET dies for high-end applications Rugged construction Superior levels of ESD protection Integrated ringwave protection Design optimized for digital channel loading Temperature-compensated gain response Optimized heat management Excellent temperature resistance Type BGD712 BGD712C BGD714 BGD812 BGD814 CGD942C CGD944C CGD1042H CGD1044H CGD1040Hi CGD1042Hi CGD1044Hi CGD1046Hi CGD982HCi CGD985HCi CGD987HCi Looking for more information on our wideband LNAs supporting multi-tuner applications in TVs, DVR/PVRs, and STBs? See section 2.3.1 LNAs with programmable gain & bypass option for improved tuner performance. 1.3 TV and satellite Network interface module (NIM) for TV reception Products by application 1.3.1 Application diagram RF input VGA surge CONVENTIONAL TUNER OR SILICON TUNER RF SW WB LNA RF output brb403 Recommended products Function Product Vcc (V) 5 Gain (db) 10 Package Type SOT363 BGU7031 SOT363 BGU7032 SOT363 BGU7033 SOT363 BGU7041 SOT363 BGU7042 SOT363 BGU7044 SOT363 BGU7045 10 5 -2 10 5 5 -2 LNA MMIC 3.3 10 10 3.3 -2 3.3 14 14 3.3 -2 Product highlight: Make a high-performance active splitter in a NIM tuner with the BGU703x/ BGU704x Today's TV tuners require complicated signal handling and benefit from flexibility in design. The front-end of a TV signal receiver is no longer just a tuned receiver, but has evolved into an RF network interface module (NIM) with tuned demodulators, active splitters, and remodulators. The active splitter requires an LNA with excellent linearity. NXP has developed two new series of LNA/VGA MMICs (BGU703x/BGU704x), designed especially for high linearity (P3O of 29 dBm) in low-noise applications such as an active splitter in a NIM tuner. The BGU703x family operates at a supply voltage of 5 V and is intended for use with normal can tuners. The BGU704x family operates at 3.3 V and works seamlessly with our Si tuner ICs, which also operate at 3.3 V. NXP Semiconductors RF Manual 16th edition 17 Recommended products Function Product 5 V silicon RF switch RF Switch / PLT switch MOSFET 3.3 V silicon RF switch Function Product AGC control amplifier MOSFET Package SOT23 SOT143B SOT143R SOT343 SOT343R SOT143B SOT143R SOT343 SOT343R Type BF1107 BF1108 BF1108R BF1108W BF1108WR BF1118 BF1118R BF1118W BF1118WR Package Type 2-in-1 with band switch @5V SOT363 BF1215 2-in-1 @ 5 V SOT363 BF1216 5V SOT343 BF1217 Note: given that there is now an LNA before the MOSFET, the gain of these MOSFETs is made slightly lower and the cross-modulation somewhat higher. That way, the MOSFET is not under AGC even under nominal RF input level. BGU703x evaluation board Product highlight: Save energy with the BF11x8 The BF11x8 series are small-signal, RF-switching MOSFETs that can be used to switch RF signals up to 1 GHz. Using the BF11x8 series as an RF switch saves a considerable amount of energy. When a recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers can still watch TV, although the antenna is looped via the recording device. Without the BF11x8, the antenna signal is lost. When power 18 NXP Semiconductors RF Manual 16th edition to the recording device is on, the BF11x8 is open, so the RF signal travels via the recording device to the TV tuner. When power to the recording device is off, the BF11x8 closes. This ensures that the RF signal is looped through directly to the TV tuner and guarantees TV reception. This saves energy because the recording device can be powered off. 1.3.2 Basic TV tuner Application diagram MOSFET From antenna, cable, active splitter, etc. MOPLL IC Products by application RF input IF VAGC bra500 Recommended products Function Product VHF low Input filter Varicap diode VHF high UHF Function Product 5V RF pre-amplifier MOSFET 2-in-1 @ 5 V V Package SOD323 SOD523 SOD323 SOD523 SOD523 SOD882D SOD882D SOD323 SOD882D SOD523 SOD523 Type BB152 BB182 BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT363 Type BF1201 BF1202 BF1105 BF1211 BF1212 BF1102R BF1203 BF1204 BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1218 Function Bandswitching Function Bandpass filter with bypass The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode. It is designed specifically for high-linearity, low-noise applications over a frequency range of 40 MHz to 1 GHz. It is especially suited to set-top box applications. The LNA is housed in a 6-pin SOT363 plastic SMD package. Product Varicap diode VHF high UHF Function Product VHF low Oscillator Varicap diode VHF high UHF RF pre-amplifier BGU7045 1 GHz wideband low-noise amplifier Bandswitch diode VHF low Function Product highlight: Product Product MOSFET Package SOD523 SOD523 SOD523 Type BA277 BA891 BA591 Package SOD323 SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523 Type BB152 BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Package SOD323 SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523 Type BB152 BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Package Type 2-in-1 with band switch @5V SOT363 BF1215 2-in-1 @ 5 V SOT363 BF1216 5V SOT343 BF1217 Features ` ` ` ` ` ` ` Internally biased Noise figure of 2.8 dB High linearity with an IP3O of 29 dBm 75 Ω input and output impedance Power-down during bypass mode Bypass mode current consumption < 5 mA ESD protection > 2 kV HBM and >1.5 kV CDM on all pins NXP Semiconductors RF Manual 16th edition 19 1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components Looking for fully integrated mixer / oscillator / downconverter for universal single LNB? See section 2.3.2 Complete satellite portfolio for all LNB architectures Application diagram horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA mixer H low IF amplifier oscillator low mixer BIAS IC V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH IF out 1 IF amplifier vertical antenna high oscillator IF amplifier V high 1st stage LNA 2nd stage LNA 3rd stage LNA mixer IF amplifier IF out 2 brb022 Recommended products Function 2nd & 3 rd stage LNA Product Function Product RF bipolar transistor RF transistor Oscillator RF transistor Function IF switch Function 1st stage IF amplifier Package SiGe:C transistor Wideband transistor SiGe:C transistor Product RF diode PIN diode Product MMIC RF bipolar transistor IF gain block Wideband transistor SOT343F Package SOT343 SOT343F SOT343F Type BFU710F BFU730F Type BFG424W BFG424F BFU660F BFU710F BFU730F Package Various Various Various Various Various Type BAP64^ BAP51^ BAP1321^ BAP50^ BAP63^ Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Type BGA2800 BGA2801 BGA2802 BGA2803 BGA2815 BGA2816 BGA2817 BGA2818 BGA2850 BGA2851 BGA2866 BFG424W BFG424F Function Product Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2818 BGA2850 BGA2865 BGA2866 BGA2867 BGA2870 BGA2874 BGM1014 MMIC IF gain block RF bipolar transistor Wideband transistor SOT343 BFG325 2nd stage LNA RF transistor SiGe:C SOT343F BFU710F BFU730F Function Product Output stage IF amplifier Mixer RF transistor Package SiGe:C transistor SOT343F Type BFU710F BFU730F ^ Also available in ultra-small leadless package SOD882D Product highlight: BGA28xx-family of IF gain blocks The BGA28xx IF gain blocks are silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuitry in a 6-pin SOT363 plastic SMD package. 20 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` No output inductor necessary when used at the output stage Internally matched to 50 Ω Reverse isolation > 30 dB up to 2 GHz Good linearity with low second- and third-order products Unconditionally stable (K > 1) 1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter Application diagram H LNA3 LNA3 COMBINER LNA2 SPLITTER LNA1 IF out 1 shared crystal LNA3 V TFF1014 SWITCHED TO LOW-BAND BPF Products by application LNA2 COMBINER LNA1 SPLITTER LNA3 BPF TFF1014 IF out 2 SWITCHED TO HIGH-BAND 22 kHz TONE DETECT 3 H/V DETECT aaa-002896 Recommended products Function 2nd & 3 rd stage LNA Product Function Product Mixer/ oscillator/ downconverter Package RF transistor RF IC SiGe:C transistor SOT343F Type BFU710F BFU730F Package Type SOT763 TFF1014HN Product highlight: Industry’s lowest-power integrated Ku-band downconverters These Universal DVB-S compliant Ku-band downconverters consume about 50% less current (52 mA) than other integrated solutions. They are fully integrated (PLL synthesizer/mixer/IF gain block) and RF tested – which results in significantly decreased manufacturing time. Stability of the local oscillator is guaranteed, which improves overall system reliability over temperature and time, and eliminates the need for manual alignment in production. Features ` ` ` ` Ultra-low current consumption (ICC = 52 mA) Low phase noise (1.5° RMS typ) Integration bandwidth from 10 kHz to 13 MHz Small PCB footprint - DHVQFN16 package (2.5 x 3.5 x 0.85 mm) - Only 7 external components - No inductors necessary NXP Semiconductors RF Manual 16th edition 21 1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV Application diagram input terrestrial amplifier input terrestrial satellite dishe(s) input amplifiers LNB output amplifiers coax out to STB SWITCH MATRIX FOR 4 × 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB brb023 Recommended products Function Product Input amplifier terrestrial Function MMIC Package General purpose medium power amplifier Product MMIC Input amplifier LNB RF bipolar transistor General purpose amplifier Wideband transistor SiGe:C transistor Function Product Switch matrix RF diode RF transistor SOT89 SOT908 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 SOT343F Package PIN diode SiGe:C transistor Various SOT343F Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 Type BGA2771 BGA2866 BGA2867 BGA2818 BFG325 BFG425W BFG520 BFG540 BFU660F BFU725F/N1 BFU730F Type BAP50^ BAP51^ BAP63^ BAP64^ BAP70^ BAP1321^ BFU725F/N1 BFU730F Function Product MMIC Package SOT908 Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 SOT363 BGM1011 SOT363 BGA2869 Wideband transistor SOT223 SOT223 SOT223 SOT143 SiGe:C transistor SOT343F BFG135 BFG 591 BFG198 BFG540 BFU725F/N1 BFU730F General purpose medium power amplifier General purpose amplifier Output amplifier RF bipolar transistor SOT89 ^ Also available in ultra-small leadless package SOD882D Product highlight: PIN diodes for switching matrix In addition to delivering outstanding RF performance, this component simplifies design-in because of its extremely low forward resistance, diode capacitance, and series inductance. Significant board space is saved by supplying a range of highly compact package options, including SOD523, SOD323 and leadless SOD882D. 22 NXP Semiconductors RF Manual 16th edition Features ` High isolation, low distortion, low insertion loss ` Low forward resistance (Rd) and diode capacitance (Cd) ` Ultra-small package options 1.3.6 VSAT Application diagram OUTDOOR UNIT INDOOR UNIT IF POWER SUPPLY PA IF1 Products by application MOD BUF DIGITAL SIGNAL PROCESSOR REF MPX to/from IDU REF MPX PMU PMU LNA IF2 SYNTH PLL ´N PLL OMT ANTENNA BUF DATA INTERFACE IF1 LNA2 LNA1 DEMOD brb405 Recommended products Indoor unit Function Product IF Function MMIC Package IF gain block Product LNA Type BGA2714 BGA2748 BGA2771 BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 SOT363 Package SiGe:C transistor SOT343F Wideband transistor SOT343R Type BFU725F/N1 BFU710F BFU725F/N1 BFU730F BFG425W BFG424W BFG325/XR RF transistor SOT143R Product highlight: TFF1003HN Low phase noise LO generator for VSAT applications The TFF1003HN is a Ku-band frequency generator intended for low phase noise local-oscillator (LO) circuits for Ku-band VSAT transmitters and transceivers. The specified phase noise complies with IESS-308 from Intelsat. Features ` ` ` ` ` ` ` Phase noise compliant with IESS-308 (Intelsat) LO generator with VCO range: 12.8 to 13.05 GHz Input signal 50 to 816 MHz Divider settings: 16, 32, 64, 128, or 256 Output level −5 dBm; stability ±2 dB Third- or fourth-order Internally stabilized voltage references for loop filter NXP Semiconductors RF Manual 16th edition 23 Recommended products Outdoor unit Function Product IF Function MMIC Package IF gain block Product LNA2 Function Package RF transistor SiGe:C transistor MMIC SiGe:C MMIC Product PLL Function RF IC SOT891 Product RF diode Function Product RF transistor Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGU7003 Type TFF1003HN TFF1007HN TFF11xxxHN^ SiGe:C IC SOT616 Wideband transistor SOT343R SiGe:C transistor SOT343F Varicap diode Package SOD523 Type BB202 Package Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F Package RF transistor Function Synth Buffer SOT343F Package Product Oscillator SOT363 Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 SiGe:C transistor SOT343F Type BFG424W BFG425W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F ^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4 Product highlight: TFF1007HN Low phase noise LO generator for VSAT applications The TFF1007HN is a Ku-band frequency generator intended for low phase noise local-oscillator (LO) circuits for Ku-band VSAT transmitters and transceivers. The specified phase noise complies with IESS-308 from Intelsat. 24 NXP Semiconductors RF Manual 16th edition Features ` Divider settings: 64 ` Input signal 230.46 to 234.38 MHz ` Internally stabalized voltage references for loop filter and output power level ` LO generator with VCO range: 14.75 to 15 GHz ` Output level -4 dBm minimum ` Phase noise compliant with IESS-308 (Intelsat) ` Third- or fourth-order PLL 1.4 Portable devices 1.4.1 GPS Products by application Application diagram external active antenna LNA BPF SPDT embedded antenna LNA BPF BPF GPS RECEIVER IC 001aan955 Recommended products Function SPDT switch Function Product RF diode Package PIN diode Product RF transistor Various Package SiGe:C transistor SOT343F SOT891 LNA MMIC SiGe:C MMIC SOT886 WL-CSP Type BAP64^ BAP1321^ BAP51^ Type BFU725F /N1 BFU710F BFU730F BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU7008 BGU8007 BGU8006 ^ Also available in ultra-small leadless package SOD882D Product highlight: BGU8007 SiGe:C LNA MMIC for GPS, GLONASS, and Galileo The BGU8007 is a low-noise amplifier (LNA) for GNSS receiver applications in a plastic leadless 6-pin extremely-small SOT886 package. It requires only one external matching inductor and one external decoupling capacitor. Features ` ` ` ` ` ` ` ` ` ` Covers full GNSS L1 band, from 1559 to 1610 MHz Noise figure (NF) = 0.75 dB Gain = 19.5 dB High 1 dB compression point of -12 dBm High out-of-band IP3i of 4 dBm Supply voltage 1.5 to 2.85 V Power-down mode current consumption < 1 µA Optimized performance at low supply current of 4.8 mA Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor NXP Semiconductors RF Manual 16th edition 25 1.4.2 FM radio Application diagram headset antenna LNA SPDT embedded antenna LNA FM RECEIVER IC 001aan956 Recommended products Function Product SPDT switch Function RF diode Package PIN diode Product RF transistor SiGe:C transistor MMIC SiGe:C MMIC LNA Various Type BAP64^ BAP 65^ BAP1321^ BAP51^ Package Type SOT343F BFU725F /N1 SOT1209 SOT891 SOT886 BGU6101 BGU6102 BGU6104 BGU7003 BGU7003W ^ Also available in ultra-small leadless package SOD882D Product highlight: BGU6102 MMIC wideband amplifier The BGU6102 is an unmatched MMIC featuring an integrated biasenable function and a wide supply voltage. It is part of a family of three products (BGU6101, BGU6102, BGU6104), and is optimized for 2 mA operation. 26 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` ` ` ` Applicable between 40 MHz and 4 GHz High ohmic FM LNA: 13 dB gain and 1.0 dB NF at 100 MHz 50 Ω FM LNA: 15 dB gain and 1.3 dB NF at 100 MHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 6 μA ESD protection > 1 kV Human Body Model (HBM) on all pins Supply voltage from 1.5 to 5 V 1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz Products by application Application diagram Recommended products Function LNA Product MMIC Package SOT891 SOT886 SiGe:C MMIC SOT1209 Type BGU7003 BGU7003W BGU6101 BGU6102 BGU6104 Product highlight: BGU7003W MMIC wideband amplifier The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high-speed, low-noise applications. It is housed in a plastic leadless 6-pin extremely thin small outline SOT886 package. Features ` ` ` ` ` ` ` Low-noise, high-gain microwave MMIC Bias current configurable with external resistor Noise figure NF = 1.2 dB at 600 MHz Insertion power gain = 19.5 dB at 600 MHz Power-down mode current consumption < 1 μA Optimized performance at low supply current of 5 mA ESD protection > 1 kV HBM on all pins NXP Semiconductors RF Manual 16th edition 27 1.4.4 Cellular receiver Application diagram GSM/ EDGE GSM/EDGE FE SWITCH TRANSCEIVER PA BPF UMTS LTE duplexer 001aan957 Recommended products Function LNA Product MMIC SiGe:C MMIC Package SOT891 SOT886 Type BGU7003 BGU7003W Product highlight: BGU7003 MMIC wideband amplifier The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high-speed, low-noise applications. It is housed in a plastic leadless 6-pin extremely thin small outline SOT886 package. 28 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` ` Applicable between 40 MHz and 6 GHz LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 1 μA ESD protection > 1 kV Human Body Model (HBM) on all pins 1.4.5 802.11n DBDC and 802.11ac WLAN low pass filter Products by application Application diagram PActrl Tx antenna SPDT switch medium power amplifier APPLICATION CHIPSET Rx bandpass filter LNA SPDT bra502 Recommended products Function Medium power amplifier Function LNA Product MMIC Package Medium power amplifier Product RF transistor MMIC SOT89 SOT908 Package SiGe:C transistor SiGe:C MMIC SOT343F SOT883C Type BGA7024 BGA7027 BGA7124 BGA7127 Type BFU730F BFU760F BFU730LX Product highlight: BFU760F NPN silicon germanium microwave transistor The BGU760F is part of the family of 6th (Si) and 7th (SiGe:C) generation RF transistors and can be used to perform nearly any RF function. These next-generation wideband transistors offer the best RF noise figure versus gain performance, drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. Features ` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz ` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz ` High input 1 dB gain compression (Pi(1dB) ) of -8 dBm @ 2.4 GHz and -5 dBm @ 5.5 GHz ` High input third order intercept point IP3I of +3 dBm @ 2.4 GHz and +8 dBm @ 5.5 GHz ` Only 8 external components required NXP Semiconductors RF Manual 16th edition 29 1.4.6 Generic RF front-end Application diagram antenna filter LNA filter mixer buffer SPDT switch filter VCO PA driver LOW FREQUENCY CHIP SET VCO bra850 Recommended products Function Product SPDT switch RF diode Bandswitch diode PIN diode Function Product Wideband transistor RF bipolar transistor LNA MMIC Function Driver Product RF bipolar transistor MMIC SiGe:C transistor Package SOD523 SOD323 Various Various Type BA277 BA591 BAP51^ BAP1321^ Function Package SOT23 SOT323 SOT323 Type PBR951 PRF957 PRF947 BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGU6101 BGU6102 BGU6104 Function SOT343F Low-noise SOT1209 wideband ampl. Wideband transistor Gen-purp wideband amp Package SOT323 SOT23 SOT363 SOT363 Mixer Buffer Function Power amplifier Function VCO Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product RF bipolar transistor Wideband transistor Product MMIC Product Varicap diodes Generalpurpose wideband amplifier VCO varicap diodes Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Package SOT23 SOT323 SOT323 SOT416 Type PBR951 PRF957 PRF947 PRF949 Package Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 SOT89 Package SOD523 SOD323 Type BB198 BB156 Type PRF957 PBR951 BGA2771 BGA2866 ^ Also available in ultra-small leadless package SOD882D Product highlight: BFU790F silicon NPN germanium microwave transistor Silicon NPN germanium microwave transistor for high-speed, lownoise applications in a plastic, 4-pin dual-emitter SOT343F package. 30 NXP Semiconductors RF Manual 16th edition Features ` Low-noise, high-linearity microwave transistor ` 110 GHz fT silicon germanium technology ` High maximum output power at 1 dB compression of 20 dBm at 1.8 GHz 1.5 Automotive 1.5.1 SDARS & HD radio Products by application Application diagram antenna 1st stage LNA 2nd stage LNA filter 3rd stage LNA CHIPSET 001aan958 Recommended products Function 1 stage LNA st Function 2nd stage LNA Function 3 stage LNA rd Product MMIC Low-noise wideband amplifier Product MMIC General-purpose wideband amplifier Product RF transistor Package Type SOT343F BFU730F Package SOT343F Type BFU690F BGA2869 BGA2851 BGA2803 SOT363 Package SiGe:C transistor SOT343F Type BFU690F BFU725F/N1 BFU790F Product highlight: BFU730F NPN wideband silicon germanium RF transistor The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C) generation RF transistors and can be used to perform nearly any RF function. These next-generation wideband transistors offer the best RF noise figure versus gain performance, drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. Features At 2.3 GHz ` High maximum power gain (Gp) of 17.6 dB ` Noise figure (NF) of 0.8 dB ` Input 1dB gain compression (Pi(1dB) ) of -15 dBm ` Input third order intercept point IP3I of +4.7 dBm NXP Semiconductors RF Manual 16th edition 31 1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission Application diagram antenna filter receiver LNA filter mixer LOW FREQUENCY CHIP SET buffer VCO antenna filter transmitter PA driver VCO LOW FREQUENCY CHIP SET bra851 Recommended products Function Product RF bipolar transistor LNA MMIC Function Driver Product RF bipolar transistor MMIC Function VCO SiGe:C MMIC SOT886 Type PBR951 PRF957 PRF947 BGU6101 BGU6102 BGU6104 BGU7003W Wideband transistor Gen-purp wideband amp Package SOT323 SOT23 SOT363 SOT363 Type PRF957 PBR951 BGA2771 BGA2866 Package SOD323 SOD323 SOD523 SOD323 Type BB148 BB149A BB198 BB156 Wideband transistor Low-noise SOT1209 wideband ampl. Product Varicap diodes Package SOT23 SOT323 SOT323 VCO varicap diodes Function Mixer Function Buffer Function Power amplifier Product RF bipolar transistor Product RF bipolar transistor Product RF bipolar transistor MMIC ^ AEC-Q101 qualified (some limitations apply) Product highlight: Varicap diodes as VCO Varicap diodes are principally used as voltage varicap capacitors, with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCOs) in ISM band applications. 32 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` Wideband transistor Excellent linearity Excellent matching Very low series resistance High capacitance ratio Wideband transistor Wideband transistor General-purpose wideband amplifier Package SOT343 SOT343 SOT343 Type BFG410W BFG425W BFG480W Package SOT23 SOT323 SOT323 SOT416 Type PBR951 PRF957 PRF947 PRF949 Package SOT323 SOT23 SOT363 SOT363 SOT908 Type PRF957 PBR951 BGA2771 BGA2866 BGA7124 1.5.3 Tire pressure monitoring system Products by application Application diagram antenna filter PA driver VCO SENSOR brb216 Recommended products Function PA Function Product RF bipolar transistor Product RF bipolar transistor Driver MMIC Function VCO Wideband transistor Wideband transistor Amplifier Gen-purp wideband amp Product Varicap diodes VCO varicap diodes Package SOT23 SOT323 SOT23 SOT323 SOT323 Type BFR92A BFR92AW BFR94A^ BFR93AW BFR94AW^ Package SOT323 SOT23 SOT363 SOT363 SOT363 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2866 Package SOD523 SOD323 Type BB198 BB156 ^ AEC-Q101 qualified (some limitations apply) Product highlight: BGU6101 MMIC wideband amplifier The BGU6101 is an unmatched MMIC featuring an integrated biasenable function and a wide supply voltage. It is part of a family of three products (BGU6101, BGU6102, BGU6104), and is optimized for 2 mA operation. Features ` ` ` ` ` ` ` Applicable between 40 MHz and 6 GHz 13 dB gain and 0.8 dB NF at 450 MHz 50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 1 μA ESD protection > 1 kV Human Body Model (HBM) on all pins NXP Semiconductors RF Manual 16th edition 33 1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) Application diagram FM input filter & AGC IF bandpass filter 1st mixer 2nd mixer variable BW filter IF limiter FM deamplifier modulator f AGC & hum filter oscillator V FM MPX oscillator AM LNA DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator AM audio bra501 Recommended products Function AM LNA Product RF transistor Function Product FM input filter & AGC RF diode JFET Varicap diode PIN diode Package SOT23 Type BF862 Package SOT23 SOT23 SOD523 SOD323 Type BB201^ BB207 BAP70-02 BAP70-03 Function AGC & hum filter Product Function Product Oscillator RF diode RF diode Package Type PIN diode SOT363 BAP70AM Varicap diode Package SOD323 SOD523 Type BB156 BB208-02 ^ OIRT Note 1: The following recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All recommended discrete products are applicable, excluding AM LNA in: DICE2:TEF6730HWCE. Product highlight: BF862 junction field effect transistor Our tuning portfolio contains advanced products for car radio reception applications and in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design-in. Performance is demonstrated in reference designs. The high-performance junction FET BG862 is specially designed for AM radio amplifiers. 34 NXP Semiconductors RF Manual 16th edition Note 2: Phones and portable radios (IC:TEA5767/68) use varicap BB202 as the FM oscillator. Features ` High transition frequency and optimized input capacitance for excellent sensitivity ` High transfer admittance resulting in high gain ` Encapsulated in the versatile and easy-to-use SOT23 package 1.6 Industrial, scientific & medical (ISM) 1.6.1 Broadcast / ISM Products by application Application diagram typ. 0.5 kW DVB-T Driver stages typ. 5 kW DVB-T output power harmonic filter power monitor TV exciter DVB-T 8× final amplifiers Recommended broadcast products Function Product Driver HPA Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) η D (%) G p (dB) Package Type 10 500 20 50 70 27.5 CW SOT467C BLF571 1 1400 35 32 63 19 CW SOT467C BLF642 1 1000 100 40 60 21 CW SOT467 BLF871(S) 1 1000 140 50 49 21 CW SOT467 BLF881(S) 10 1400 200 32 70 18 pulsed SOT1121 BLF647P(S)* BLF178P Test signal 10 128 1200 50 75 28.5 pulsed SOT539A 470 860 500 42 47 21 CW SOT539A BLF879P 470 860 300 50 46 21 CW SOT1121 BLF884P(S) 470 860 600 50 46 21 CW SOT539 BLF888A(S) 470 860 600 50 46 21 CW SOT539 BLF888B(S) Recommended ISM products Function HPA Product fmin (MHz) fmax (MHz) P1dB (W) Matching Driver 1 10 10 10 10 10 1300 2400 2400 2400 2400 2500 128 128 500 500 500 1300 2500 2500 2500 2500 12 600 1400 200 600 1400 250 180 140 200 250 I I I/O I/O I/O I/O Final VDS (V) 28 50 50 50 50 50 50 28 28 28 28 η D (%) G p (dB) 60 75 72 70 70 69 56 55 52 52 55 19 28 29 24 26 23 17 12 17.5 15 15 Test signal CW pulsed pulsed pulsed pulsed pulsed CW CW CW CW CW Package Type SOT975 SOT539 SOT539 SOT1121 SOT539 SOT539 SOT1121 SOT539 SOT502 SOT502 SOT539 BLF25M612(G)* BLF174XR(S)* BLF178XR(S) BLF572XR(S)* BLF574XR(S)* BLF578XR(S) BLF6G13L(S)-250P BLF2425M6L(S)180P* BLF2425M7L(S)140* BLF2425M7L(S)200* BLF2425M7L(S)250P* * Check status in section 3.1, as this type is not yet released for mass production Product highlight: BLF578XR Power LDMOS transistor Designed for broadband operation, this 1400 W extremely rugged LDMOS power transistor supports broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578. It uses NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising RF performance. Features ` ` ` ` ` ` Output power = 1400 W Power gain = 23 dB High Efficiency = 69 % Integrated ESD protection Excellent ruggedness Excellent thermal stability NXP Semiconductors RF Manual 16th edition 35 1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee Application diagram Looking for a wireless microcontroller platform with chipsets, modules and supporting software? See section 2.5.6 Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions. antenna filter LNA filter mixer buffer SPDT switch filter LOW FREQUENCY CHIP SET VCO PA driver VCO bra850 Recommended products Function Product SPDT Switch RF diode Bandswitch diode PIN diode Function Product RF transistor LNA MMIC Function SiGe:C transistor SiGe:C MMIC Product Driver Package SOD523 SOD323 Various Various Type BA277 BA591 BAP51^ BAP1321^ Function Package Function SOT886 Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGU7003W Package Type SOT343F RF bipolar transistor Wideband transistor SOT343 BFG425W MMIC Gen-purp wideband amp SOT363 SOT363 BGA2771 BGA2866 Mixer Buffer Function Medium power amplifier Function VCO Product RF bipolar transistor Wideband transistor MMIC Linear mixer Product RF bipolar transistor Wideband transistor Product RF bipolar transistor Wideband transistor MMIC Product Varicap diodes Generalpurpose wideband amplifier VCO varicap diodes Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Package SOT23 SOT323 SOT323 SOT416 Type PBR951 PRF957 PRF947 PRF949 Package Type SOT343 BFG21W SOT908 SOT908 BGA6289 BGA6489 BGA6589 BGA7124 BGA7127 Package SOD523 SOD323 Type BB198 BB156 SOT89 ^ Also available in ultra-small leadless package SOD882D Product highlight: BGA7127 MMIC medium power amplifier The BGA7127 MMIC is a one-stage driver amplifier offered in a low-cost, ultra-small SOT908 leadless package. It delivers 27 dBm output power at 1 dB gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 MHz. 36 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` ` ` Operating range: 400 to 2700 MHz 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 / 5 V single-supply operation Simple quiescent current adjustment 1 μA shutdown mode 1.6.3 RF microwave furnace application Application diagram oscillator MPA Products by application antenna HPA isolator CONTROLLER brb418 Recommended products Function Product Package SOT343R RF transistor Oscillator SOT343F Function Product Package SOT89 MPA (medium power amplifier) SOT908 SOT89 SOT908 SOT89 SOT908 MMIC Type BFG410W BFG424W BFG425W BFG424F BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130 * Check status in section 3.1, as this type is not yet released for mass production Function Product Driver HPA Final fmin (MHz) fmax (MHz) P1dB (W) ηη D (%) G p (dB) 1 2400 2400 2400 2400 2500 2500 2500 2500 2500 12 180 140 200 250 60 55 52 52 55 19 12 17.5 15 15 Product highlight: New family for ISM 2.45 GHz NXP's 6th and 7th generation LDMOS technology, along with advanced packaging concepts, enables power amplifiers that deliver best-in-class performance at 2.45 GHz. The unsurpassed ruggedness and low thermal resistance, along with the intrinsic efficiency of the LDMOS process, make these transistors ideally suited for furnace applications. test signal CW CW CW CW CW Package Type SOT975 SOT539 SOT502 SOT502 SOT539 BLF25M612(G) BLF2425M6L(S)180P BLF2425M7L(S)140* BLF2425M7L(S)200 BLF2425M7L(S)250P* Features ` ` ` ` Excellent ruggedness Consistent device performance Low thermal resistance for unrivalled reliability Ease of design NXP Semiconductors RF Manual 16th edition 37 1.6.4 RF plasma lighting Looking for more information on RF plasma lighting? See section 2.5.2 RF-driven plasma lighting: The next revolution in light sources are powered by solid-state RF technology Application diagram RF (plasma) bulb oscillator MPA HPA CONTROLLER brb436 Recommended products Function Product RF transistor Oscillator Function Product Package Type SOT143 SOT143 SOT23 SOT323 SOT323 SOT323 SOT343 SOT343 SOT363 SOT416 BFG520 BFG325/XR BFR520 BFR92AW BFR93AW BFS520 BFG520W BFG325W/XR BFM520 BFR520T Package Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130 SOT89 MPA (medium power amplifier) Function SOT908 SOT89 SOT908 SOT89 SOT908 MMIC Product Driver HPA Final fmin (MHz) fmax (MHz) P1dB (W) Package Type 1 10 1 10 10 10 10 10 688 700 700 2400 2400 2400 2400 2500 500 1000 500 500 500 500 500 1000 1000 1000 2500 2500 2500 2500 12 20 100 300 600 600 1200 1400 200 135 160 180 140 200 250 SOT975 SOT467C SOT467 SOT502 SOT539A SOT539 SOT539A SOT539 SOT502 SOT502 SOT502 SOT539 SOT502 SOT502 SOT539 BLF25M612(G)* BLF571 BLF871(S) BLF573(S) BLF574 BLF574XR(S)* BLF578 BLF578XR(S) BLF6G10(LS)-200RN BLF6G10(LS)-135RN BLF6G10(LS)-160RN BLF2425M6L(S)180P* BLF2425M7L(S)140 BLF2425M7L(S)200* BLF2425M7L(S)250P * Check status in section 3.1, as this type is not yet released for mass production Product highlight: LDMOS enables RF lighting NXP's 50 V high-voltage LDMOS process enables highest power at the extreme ruggedness levels necessary for this kind of application. BLF578: 1200 W CW operation - highest power LDMOS 38 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` Highest power device Unprecedented ruggedness Low thermal resistance for reliable operation Consistent device performance Broadband device for flexible use 1.6.5 Medical imaging Looking for more information on medical applications? See section 2.5.1 Medical applications driven by RF power: From imaging to cancer treatment, a flexible and versatile technology in the doctor’s toolbox Products by application Application diagram Magnet X GRADIENT AMPLIFIER Gradient coils RF coils Y GRADIENT AMPLIFIER WAVEFORM GENERATOR Z GRADIENT AMPLIFIER RF amplifier RF ELECTRONICS COMPUTER ADC IMAGE DISPLAY brb434 Recommended products Function Product Driver HPA Final fmin (MHz) fmax (MHz) P1dB (W) 1 10 1 10 10 10 10 10 688 700 700 2400 2400 2400 2400 2500 500 1000 500 500 500 500 500 1000 1000 1000 2500 2500 2500 2500 12 20 100 300 600 600 1200 1400 200 135 160 140 180 200 250 Package Type SOT975 SOT467C SOT467 SOT502 SOT539A SOT539 SOT539A SOT539 SOT502 SOT502 SOT502 SOT502 SOT539 SOT502 SOT539 BLF25M612(G)* BLF571 BLF871(S) BLF573(S) BLF574 BLF574XR(S)* BLF578 BLF578XR(S) BLF6G10(LS)-200RN BLF6G10(LS)-135RN BLF6G10(LS)-160RN BLF2425M7L(S)140 BLF2425M6L(S)180P* BLF2425M7L(S)200* BLF2425M7L(S)250P * Check status in section 3.1, as this type is not yet released for mass production Product highlight: LDMOS in emerging medical applications NXP’s line of 50 V high-voltage LDMOS devices enables highest power output and features unequalled ruggedness for pulsed operation in MRI and NMR applications. The high power densities enable compact amplifier design. Features ` ` ` ` Best broadband efficiency Highest power (density) devices Unrivalled ruggedness Consistent device performance NXP Semiconductors RF Manual 16th edition 39 1.7 Aerospace and defense 1.7.1 Microwave products for L- and S-band radar and avionics applications Application diagram RF signals video, timing, bias voltage, control and data I-f signals RF small signal ANTENNA DRIVE RF POWER BOARD RF power PLL VCO MPA mixer HPA ISOLATOR VGA local oscillator duplexer DISPLAY AND CONTROL local oscillator signal WAVEFORM GENERATOR PLL VCO control and timing mixer DETECTOR video LNA IF amplifier brb410 Recommended products Function Product Driver HPA Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) η D (%) G p (dB) Package Type 500 1030 1030 2700 2700 3100 400 500 960 960 1030 1030 1200 1200 1200 2700 2700 2900 3100 3100 1400 1090 1090 3100 3500 3500 1000 1400 1215 1215 1090 1090 1400 1400 1400 3100 2900 3300 3500 3500 25 10 2 6 30 20 600 130 250 500 200 600 250 500 250 130 350 150 120 350 50 36 36 32 32 32 50 50 36 50 28 48 36 50 50 32 32 32 32 32 50 40 33 50 45 57 50 50 50 65 52 45 50 55 50 50 47 43 43 19 16 16 15 13 15.5 20 17 13.5 17 20 17 15 17 17 12 13.5 13.5 11 10 SOT467C SOT467C SOT538A SOT975C SOT1135 SOT608 SOT539 SOT1135 SOT502A SOT634A SOT502 SOT539A SOT502A SOT539A SOT502 SOT922-1 SOT539 SOT922-1 SOT502 SOT539 BLL6H0514-25 BLA1011-10 BLA1011-2 BLS6G2731-6G BLS6G2735L(S)-30 BLS6G3135(S)-20 BLU6H0410L(S)-600P BLL6H0514L(S)-130 BLA0912-250R BLA6H0912-500 BLA6G1011LS-200RG BLA6H1011-600 BLL6G1214L-250 BLL6H1214-500 BLL6H1214L(S)-250 BLS6G2731S-130 BLS7G2729L(S)-350P BLS7G2933S-150 BLS6G3135(S)-120 BLS7G3135L(S)-350P* * Check status in section 3.1, as this type is not yet released for mass production Product highlight: BLS7G2729L-350P LDMOS S-band radar power transistor Designed for S-band operation (2.7 to 2.9 GHz), this internally matched LDMOS power transistor for rader applications delivers an output power of 350 W and a power gain of 13.5 dB at an efficiency of 50 %. 40 NXP Semiconductors RF Manual 16th edition Features ` ` ` ` ` Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness Excellent thermal stability LNA (low-noise amplifier) & Mixer Function Product RF transistor SiGe:C transistor Product Package Type SOT343F BFU710F BFU725F/N1 BFU730F Package Type SOT363 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 Package Type SOT616 TFF1003HN TFF1007HN TFF11xxxHN^ MMIC IF amplifier MMIC General-purpose wideband amplifiers Function PLL/VCO LO generator Function Single VGA (variablegain amplifier) Function Dual VGA (variablegain amplifier) Function MPA (medium power amplifier) Product RF IC Product MMIC Product MMIC Product MMIC SiGe:C IC Gain range Package Type 31 dB SOT617 BGA7210 BGA7204 Gain range Package Type 24 dB 28 dB SOT617 BGA7350 BGA7351 PL (1 dB) @ 940 MHz Package Type 24 dBm 28 dBm 25 dBm 28 dBm 30 dBm Products by application Function BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 SOT89 SOT908 ^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4 Product highlight: BGA28xx-family of IF gain blocks The BGA28xx IF gain blocks are silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuitry in a 6-pin SOT363 plastic SMD package. Features ` ` ` ` No output inductor necessary when used at the output stage Internally matched to 50 Ω Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order NXP Semiconductors RF Manual 16th edition 41 2. Focusapplications,products&technologies 2.1Wirelesscommunicationinfrastructure 2.1.1 BuildahighlyefficientsignalchainwithRFcomponentsfortransmitline-upsandreceivechains As a global leader in RF technology and component design, NXP Semiconductors offers a complete portfolio of RF products, from low- to high-power signal conditioning that delivers advanced performance and helps simplify your design and the development process. Our solutions range from discrete devices to modular building blocks, so you can design a highly efficient signal chain. State-of-the-art QUBiC4 NXP’s industry-leading QUBiC4 technology, available since 2002, has been widely deployed in the field and offers more consistent parameter performance compared to GaAs technology. It speeds the migration from GaAs to silicon and delivers more functionality in less space. High integration reduces the design footprint and enables more costcompetitive designs. It also improves reliability and offers significant savings in manufacturing expenditures. Application diagram of base station (all cellular standards and frequencies) The block diagram below shows base station transmit (upper part, Tx) and receive (lower part, Rx) functions, and includes the Tx feedback function (middle part, Tx feedback). DPD CFR DUC DDC Power Amplifier DVGA RF-BP PLL VCO Dual DAC 0 HPA 90 Transmitter Q IF-SAW JEDEC IF MPA DVGA Mixer+LO Tower Mounted Amplifier Tx Att. ADC LO Duplexer Digital Front End (JEDEC) Interface OBSAI / CPRI Digital Baseband JEDEC Interface IQ-Modulator I JEDEC Interface RF-SAW Dual ADC Clock Generator Jitter Cleaner BP or LP Dual DVGA Data Converter IF-SAW RF Small Signal Digital wideband VGAs with high linearity & flexible current settings These 6-bit digital VGAs (BGA7204 & BGA7210) offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power (23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no connection crosses simplifies design and decreases footprint by 25%. 42 NXP Semiconductors RF Manual 16th edition Dual Mixer PLL VCO RF Power LNA +VGA Rx LNA TX / RX1 µC RX2 Filter Unit LNA+VGA Micro Controller The unique power-save mode can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. Medium power amplifier The NXP MPAs (BGA7x2x/BGA7x3x) are based on a one-stage amplifier, available in a low-cost surface-mount package. It delivers a set of available output power from 24 to 30 dBm. All cover the frequency range from 400 to 2700 MHz. Low-noise amplifiers up to 2.8 GHz Designed for high linearity and low noise, these monolithic SiGe:C BiCMOS LNAs (BGU7051, BUG7052 & BGU7053) deliver 18-24 dB gain, 3-5 dB more gain than equivalents, along with low power consumption. The RF input power overdrive of 20 dBm and the high ESD protection (HBM 4 kV; CDM 2 kV) make these devices extremely rugged. Integrated biasing circuitry, 3.3 V supply voltage and low external component count (only 6 capacitors) ensures easy system integration. Integrated base station LNAs with lowest NF for the complete LNA chain NXP provides the industry’s only fully Integrated base station LNA that can be tailored to the needs of individual OEMs for optimal fit in their Rx line-ups. By integrating three stages in one monolithic design, these SiGe:C BiCMOS LNAs (BGU706x) deliver the industry’s lowest noise figure for a receive chain (0.9 dB), while saving up to 80% in component cost. Additionally, the analog gain control up to 35 dB, RF input power overdrive of 10-15 dBm, and high linearity (0.9-2.5 dBm IP3I at maximum gain) make them very suitable in small cell sizes. IQ modulators The BGX7100 and BGX7101 devices combine high performance, high linearity I and Q modulation paths for use in radio frequency up-conversion. It supports RF frequency outputs in the range from 400 to 4000 MHz. The BGX710x IQ modulator is performance-independent of the IQ common mode voltage. The modulator provides a typical output 1 dB compression point (PL(1dB)) value of 12 dBm and a typical 27 dBm output thirdorder intercept point (IP3O). Unadjusted sideband suppression and carrier feed through are 50 dBc and −45 dBm respectively. A hardware control pin provides a fast power-down/ power-up mode functionality which allows significant power saving. The BGX7101 is 4 dB higher gain compared to the BGX7100. Dual mixers The BGX722x device combines a pair of high-performance, high-linearity down-mixers for use in receivers having a common local oscillator (e.g. having main and diversity paths). Each mixer provides an input 1 dB compression point (P1dB) above 13 dBm, with an input thirdorder intercept point (IIP3) of 26 dBm. The small-signal noise figure (NF) is below 10 dB whereas under large signal blocking conditions the NF is typically 19 dB. Isolation between mixers is at least 40 dB. Synthesizer with an integrated VCO (LO generator) The BGX7300 is a low phase noise wideband synthesizer with an integrated VCO which allows the implementation of an integer-N or fractional-N Phase-Locked Loop (PLL). The integrated voltage controlled oscillator (VCO) supports a fundamental frequency range from 2.2 GHz up to 4.4 GHz. The BGX7300 has dual differential RF outputs, each with output power up to +5 dBm. The VCO frequency can by divided by 1/2/4/8/16/32 before being fed to the RF outputs. Hence the generated output frequency can be as low as 68.75MHz. For isolation purpose, each RF output can be muted or forced into power-down mode using a hardware pin or SPI sofware control. A dedicated differential input stage lets the BGX7300 work with an external VCO. Most of the characteristics are programmable via a 3- or 4-wire Serial Peripheral Interface bus (SPI). Each VCO is powered from an internally regulated voltage source providing sufficient power supply rejection. The device is designed to operate from 3.3 V nominal supply voltage connected to the supply pins. Selection guides of the listed components are available in Chapter 3 (3.4.1 & 3.4.2). NXP Semiconductors RF Manual 16th edition 43 Focusapplications, products&technologies Dual digital IF VGAs The BGA7350 and BGA7351 are dual, independently controlled receive IF VGAs that operate from 50 to 250 MHz. Integrated matching improves performance in the receiver chain, because the VGA can drive the filter directly into the analog-to-digital converter to ensure a constant input level. The BGA7350 has a gain range of 24 dB, while the BGA7351 has a range of 28 dB. For both devices, the maximum gain setting delivers at least 16 dBm output power at 1 dB gain compression (P1dB). For gain control, each amplifier uses a separate digital gain-control code, which is provided externally through two sets of five bits. The resulting gain flatness is 0.1 dB. 2.1.2 DigitalwidebandVGAswithhighlinearity&flexiblecurrentsettings NXP digital VGAs BGA7204 & BGA7210 These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power (23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no connection crosses simplifies design and decreases footprint by 25%. The unique power-save mode can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible current distribution across its two amplifiers, depending on the attenuation state, to save current. Key features ` Internally matched for 50 Ω - BGA7204 = 0.4 to 2.75 GHz - BGA7210 = 0.7 to 3.8 GHz ` High maximum power gain - BGA7204 = 18.5 dB - BGA7210 = 30 dB ` High output third-order intercept, IP3O - BGA7204 = 38 dBm - BGA7210 = 39 dBm ` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit) ` High output power, PL(1dB) - BGA7204 = 21 dBm - BGA7210 = 23 dBm ` Fast switching power-save mode (power down pin) ` Digitally controlled current setting from 120 to 195 mA with an optimum at 185mA (BGA7210 only) ` Simple control interfaces - BGA7204 SPI and parallel - BGA7210 SPI ` ESD protection on all pins (HBM 4 kV; CDM 2 kV) ` HVQFN32 (5 x 5 x 0.85 mm) Key benefits ` Wideband operation supports platforms with multiple frequency ranges ` Smart lead routing produces simpler design, decreases footprint by 25% ` Power-save mode can reduce current consumption in TDD systems up to 45% ` Flexible current setting (BGA7210) saves power ` Monolithic design enables high quality 44 NXP Semiconductors RF Manual 16th edition Applications ` GSM, W-CDMA, WiMAX, LTE base stations ` Wireless point-to-point and repeaters ` Cable modem termination systems ` Temperature-compensation circuits OM7921 – BGA7210 customer evaluation kit (also available OM7922 – BGA7204 CEK) Designed for the transmit path of wireless architectures, these VGAs can be used to control the power level to the power amplifier. The up-converted signals are fed to the VGA, and thus help compensate for variations in cell load and the presence of aging infrastructure equipment. The BGA7204 operates in the range between 0.4 and 2.75 GHz, while the BGA7210 operates between 0.7 and 3.8 GHz. By supporting more than 2 GHz of bandwidth, these devices can be used to populate several frequency bands. An integrated power-save mode makes it possible to reduce consumption even more, to just 15 mA during a receive slot. This can effectively reduce the current consumption in Time Division Duplexing (TDD) systems up to 45%. The BGA7210 builds on the BGA7204 by adding flexible current setting across its two amplifiers, depending on the attenuation state. The serial peripheral interface is used to set the attenuation state, and, using a similar method, to set the current through the first and second amplifiers. The desired configuration is set by software and enables current savings of as much as 75 mA. Higher output power, higher peak gain, and smaller attenuator step sizes enable engineers to use fewer components and provide greater control to maintain and optimize performance in the transmit chain. Smart routing (with no connection crosses) reduces the number of board connections, simplifies design-in, and decreases the design footprint by 25%. The monolithic design increases reliability and ensures high quality. Schematic of BGA7210 evaluation board (OM7921) VSUP C23 L1 C22 C26 C12 PUPMXG/ VDDD VCC1 CLK SERIN SS SEROUT PWRDN 24 23 22 21 20 19 17 VDDA 16 C25 C14 C24 C18 15 VCC2 C17 C1 RF_IN 29 L2 C27 12 RF_OUT RF_OUT Csh aaa-000665 Digital VGAs Type number BGA7204 BGA7210 Package SOT617-3 SOT617-3 frange [min] (MHz) frange [max] (MHz) @VCC (V) @ICC [typ] (mA) Gp@ minimum attenuation (dB) Attenuation range (dB) IP3O [typ] (dBm) PL(1dB) [typ] (dBm) NF [typ] (dB) 400 700 5 115 18.5 31.5 38.0 21.0 7.0 700 1450 5 115 18.5 31.5 37.5 21.0 6.5 1450 2100 5 115 17.5 30.5 36.0 20.5 6.5 2100 2750 5 115 16.5 30.0 34.0 20.0 7.0 700 1400 5 185 30.0 31.5 39.0 21.0 6.5 1400 1700 5 185 29.5 31.5 37.0 21.0 6.5 1700 2200 5 185 29.0 31.5 35.0 21.0 6.5 2200 2800 5 185 28.0 30.5 35.0 23.0 7.0 3400 3800 5 185 26.0 29.5 27.0 19.0 8.0 NXP Semiconductors RF Manual 16th edition 45 Focusapplications, products&technologies The NXP BGA7204 and BGA7210 are monolithic digital variable-gain amplifiers (VGAs) that operate over an extremely wide range with high linearity and high output power. 2.1.3 Dohertyamplifiertechnologyforstate-of-the-artwirelessinfrastructure Best-in-class PA designs enable considerable energy savings NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible, NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective to operate. Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-toaverage ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals makes the high power and added efficiency of the Doherty approach the preferred option for most service providers. NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two transistors combined. The input and output sections are internally matched, benefiting the amplifiers with high gain, good gain flatness, and phase linearity over a wide frequency band. Integrated Doherty NXP offers the world’s first fully integrated Doherty designs. From the outside these devices look like ordinary transistors. In fact, they are completely integrated Doherty amplifiers that readily deliver the associated high efficiency levels for base station applications. With the ease of design-in of an ordinary Class AB transistor, they also provide significant space and cost savings. 46 NXP Semiconductors RF Manual 16th edition Key features & benefits ` Contains splitter, main and peak amplifier, delay lines, and combiner in one package - 40% efficiency @ 10 W average power - No additional tuning in manufacturing ` Design is as easy as with a single Class AB transistor ` Ideally suited for space-constrained applications (e.g. remote radio heads, antenna arrays) ` Currently available for TD-SCDMA (BLD6G21L(S)-50) and W-CDMA (BLD22L(S)-50); see section 3.7.1.4 for details Key features & benefits ` Most efficient Doherty amplifier designs available to date ` Production-proven, consistent designs ` NXP’s LDMOS provides unsurpassed ruggedness ` Currently available for the following frequency bands: - 728 to 821 MHz - 869 to 960 MHz - 1805 to 1880 MHz (DCS) - 1930 to 1990 MHz (PCS) - 1880 to 2025 MHz (TD-SCDMA) - 2110 to 2170 MHz (UMTS / LTE) - 2300 to 2400 MHz (WiBRO / LTE) - 2500 to 2700 MHz (WiMAX / LTE) - 3300 to 3800 MHz (WiMAX) Focusapplications, products&technologies Discrete Doherty amplifiers In addition to the integrated versions, NXP offers product demonstrators for very efficient, high-power, discrete two- and three-way Doherty amplifiers. The two-way designs, based on the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43% efficiency and 15.7 dB gain for W-CDMA applications. All of our product demonstrators are supported by comprehensive documentation and hardware. Please see section 3.7.1.8 for a complete list of available designs. Our flagship three-way Doherty demonstrator achieves 48% efficiency at 48 dBm (63 W) average output power and 15.0 dB gain with a two-carrier W-CDMA signal. The current design covers the W-CDMA standard for band 1 operation and is tailored towards high-yield, minimum-tuning, volume manufacturing. Power LDMOS Doherty designs Freqband (MHz) PPEAK (dBm) POUT-AVG (dBm) VDS (V) Gain (dB) DrainEff. (%) Type Maintransistor Peaktransistor 869-894 59.2 50.4 28 16 52 3-WAY BLF7G10LS-250 2x BLF7G10LS-250 920-960 57.3 49.3 30 16 50 ASYM BLF8G10LS-160 BLF7G10LS-250 1526-1555 56.6 48.6 28 18.4 42 SYM BLF7G15LS-200 BLF7G15LS-200 1805-1880 58.6 51 28 16 47.6 3-WAY BLF7G20LS-200 2x BLF7G20LS-200 1930-1990 58.2 50 28 16 40 SYM BLF7G20LS-250P BLF7G20LS-250P 2010-2025 52.2 44 28 15.6 43 SYM 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P 2110-2170 56.5 49 28 14.2 46 ASYM BLF7G22LS-160 BLF7G22LS-200 2110-2170 57.2 49.2 28 16 47 3-WAY BLF7G22LS-160 2x BLF7G22L(S)-160 2300-2400 56.8 48.5 30 15 42 3-WAY BLF7G24LS-100 2x BLF7G24LS-100 2620-2690 55.2 47.2 30 15 41 ASYM BLF7G27LS-100 BLF7G27LS-140 NXP Semiconductors RF Manual 16th edition 47 2.1.4 ThenewgenerationofLDMOSRFpowerforwirelessinfrastructures:NXP'sGen8 NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations. Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly better than its predecessors, and its competitors, and again sets standards for the industry. Gen8 addresses the key trends in the wireless infrastructure industry ` Increasing signal bandwidths up to 100 MHz to enable full-band operation ` Cost sensitivity: peak powers up to 270 Watts in SOT502sized packages ` Reduction in the size/weight/volume of the cabinet ` The ongoing need for greater electrical efficiency to reduce cooling requirements and operational expenditures ` Ever-increasing output power ` The need to deploy multi-standard and future-proof solutions Gen8 is the answer to all these often conflicting requirements. The package and die design, as well as the input and output match structures, have been optimized to enable wideband, affordable, compact, multi-standard, and highly efficient Doherty power amplifiers. Solutions for all cellular frequency bands are currently being sampled and are in production or will be released throughout 2012. The first wave of Gen8 transistors fmin (MHz) fmax (MHz) P1dB (W) Matching Package Planned release BLF8G10L(S)-160 920 960 160 I/O SOT502 Released BLF8G10L(S)-160V 700 1000 160 I/O SOT1244 Released BLF8G10LS-200GV 700 1000 200 I/O SOT1244C Q412 BLF8G10LS-270GV 700 1000 270 I/O SOT1244C Q412 BLF8G10L(S)-300P 850 960 300 I/O SOT539 Q312 BLF8G10LS-400PGV 700 1000 400 I/O SOT1242C Q412 BLF8G20L(S)-200V 1800 2000 200 I/O SOT1120 Released BLF8G20LS-270GV 1800 2000 270 I/O SOT1244C Q412 BLF8G20LS-270PGV 1800 2000 270 I/O SOT1242C Q412 BLF8G22LS-160BV 2000 2200 160 I/O SOT1120B Released BLF8G22LS-200GV 2000 2200 200 I/O SOT1244C Q312 BLF8G22LS-270GV 2000 2200 270 I/O SOT1244C Q312 BLF8G22LS-400PGV 2000 2200 400 I/O SOT1242C Q312 BLF8G24L(S)-200P 2300 2400 200 I/O SOT539 Q312 BLF8G27LS-140G 2500 2700 140 I/O SOT502E Q412 BLF8G27LS-140V 2600 2700 140 I/O SOT1244B Q412 BLF8G27LS-200PGV 2500 2700 200 I/O SOT1242C Q412 BLF8G27LS-280PGV 2500 2700 280 I/O SOT1242C Q412 Type Note: All devices are internally matched (I/O) 48 NXP Semiconductors RF Manual 16th edition Description Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing) Gen8 ceramic LDMOS transistor for WCDMA & LTE applications Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) Gen8 ceramic LDMOS transistor for WCDMA & LTE applications Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) 2.2Broadbandcommunicationinfrastructure 2.2.1 Connectingpeople,protectingyournetwork:NXP'sCATVC-familyfortheChinese SARFTstandard Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of China’s "Connecting to Every Village" program and powerful enough for upgrading major cities from analog Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range. Products ` BGY588C, BGE788C and CGY888C push-pull amplifiers ` BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi and CGD987HCi power doublers ` BGO807C, BGO807CE optical receivers Benefits ` Compliant with Chinese SARFT HFC networks standard ` Transparent cap allows confirmation of product authenticity ` Rugged construction ` Highest by Design internal ESD protection Features ` Excellent linearity, stability, and reliability ` High power gain ` Extremely low noise ` Silicon nitride passivity ` GaAs HFET dies for high-end devices The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C and CGD944C are high-gain, high-performance 870 MHz power doublers. The CGD982HCi, CGD985HCi and CGD987HCi operate from 40 to 1003 MHz and are specified for 870 MHz and 1 GHz. These power doublers are optimized for the Chinese SARFT standard. They are capable of satisfying the demanding requirements of topend applications, including high-power optical nodes. Our GaAs HFET MMIC dies are designed to provide the best ESD protection levels, without the external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a transparent cap that makes it easy to distinguish them from counterfeit products. C-family application information NXPC-familybyapplication Application BGY588C BGE788C CGY888C BGD712C BGO807C CGD942C BGO807CE CGD944C CGD982HCi CGD985HCi CGD987HCi Optical node • • • • Optical receiver • • • • Distribution amplifier • • • • Line-extender amplifier • • • • Terminating amplifier • • • NXP Semiconductors RF Manual 16th edition 49 Focusapplications, products&technologies to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio, BGY588C, BGE788C, and CGY888C The last stage of an HFC network structure is called IN port a ‘terminating amplifier‘ or, since it's close to the subscriber, a "user amplifier." terminating amplifier requires a single module PAD OUT port EQ BGY588C BGE788C CGY888C such as the BGY588C for 550 MHz, the BGE788C for 750 MHz and the CGY888C for 870 MHz systems. These modules fit bra820 perfectly in the Chinese "Connecting to Every Village" projects. BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including IN port PAD BGY785A BGY787 ordinary or optical receivers and distribution amplifiers. It can also be used in line-extender amplifiers together with OUT port EQ BGD712C bra821 a 750 MHz push-pull module, such as the BGY785A or the BGY787. As such it can be used widely in Chinese "Connecting to Every Village" projects. CGD944C and CGD942C Our full GaAs power doubler modules, the CGD942C and the CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 870 MHz. CGD94xC / CGD98xHCi PAD CGD94xC / CGD98xHCi PAD BGO807C The BGO807C is an integrated optical receiver module that provides high output levels with integrated temperaturecompensated circuitry. In an optical node design, the BGO807C enables a high performance / price ratio and ruggedness. When upgrading an HFC network from analog to digital, the BGO807C is the perfect fit. EQ PAD BGO807C BGO807CE CGD982HCi, CGD985HCi, and CGD987HCi Our newest GaAs power doubler modules, the CGD982HCi, the CGD985HCi and the CGD987HCi are customized designs for CATV hybrid fiber coax Chinese networks operating in the 40 to 1003 MHz bandwidth, and specified with the Chinese cable TV network official loading raster on top of the traditional NTSC loading rasters. For use in optical notes for fiber deep applications where the output power level needs to be at its highest. OUT port 1 H L (N + 1) OUT port 2 H L CGD94xC / CGD98xHCi PAD RF switch OUT port 3 H L CGD94xC / CGD98xHCi PAD BGO807C BGO807CE OUT port 4 H L bra822 BGD812 PAD PAD BGO807C BGO807CE EQ BGY885A H L OUT port 1 H L OUT port 2 BGD812 PAD bra823 50 NXP Semiconductors RF Manual 16th edition Connecting people, protecting your network NXP CATV C-family for the Chinese SARFT standard Push-pull amplifiers BGY588C Power gain (dB) BGE788C CGY888C Typ 34.5 34.2 35.5 Slope cable equivalent (dB) Range 0.2 - 1.7 0.3 - 2.3 1.5 typ. Composite triple beat (dB) Max -57 -49 -68 typ. Composite 2nd order distortion (dB) Max -62 -52 -66 typ. Noise (@ f max) (dB) Max 8 8 4 typ. Total current consumption (mA) Typ 325 305 280 Range 40 - 550 40 - 750 40 - 870 Frequency range (MHz) Focusapplications, products&technologies Parameters Power doublers Parameters BGD712C Power gain (dB) CGD942C CGD944C CGD982HCi CGD985HCi CGD987HCi Typ 18.5 23 25 23 24.5 27 Slope cable equivalent (dB) Range 0.5 - 1.5 1-2 1-2 0.5 - 2 0.5 - 2 0.7 - 2 Composite triple beat (dB) Max -62 -66 typ. -66 typ. -66 -66 -66 Composite 2 order distortion (dB) Max -63 -66 typ. -66 typ. -69 -69 -66 Noise (@ f max) (dB) Max 7 5 5 5.5 5.5 5.5 Total current consumption (mA) Typ 395 450 450 440 440 440 Range 40 - 750 40 - 870 40 - 870 40 - 1003 40 - 1003 40 - 1003 BGO807C BGO807CE Min 800 800 Slope cable equivalent (dB) Range 0-2 0-2 Composite triple beat (dB) Max -71 -69 Composite 2nd order distortion (dB) Typ -54 -53 Noise (@ f max) (dB) Max 8.5 8.5 Total current consumption (mA) Typ 190 190 Range 40 - 870 40 - 870 nd Frequency range (MHz) Optical receiver Parameters Responsivity (Rmin) Frequency range (MHz) Connector - / SC0 / FC0 NXP Semiconductors RF Manual 16th edition 51 2.2.2 Highlyefficientline-upof1GHzGaAsmodulesforsustainableCATVnetworks NXP high gain power doublers CGD104xHi and push-pulls CGY104 Designed for 1 GHz “sustainable networks,” these high-performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-end services like HDTV, VoIP, and digital simulcasting. New CATV GaAs platform layout Key features ` Excellent linearity, stability, and reliability ` High power gain for power doublers ` Extremely low noise ` Dark Green products ` GaAs HFET dies for high-end applications ` Rugged construction ` Superior levels of ESD protection ` Integrated ringwave protection ` Design optimized for digital channel loading ` Temperature compensated gain response ` Optimized heat management ` Excellent temperature resistance Key benefits ` Simple upgrade to 1-GHz capable networks ` Low total cost of ownership ` High power-stress capability ` Highly automated assembly Key applications ` Hybrid Fiber Coax (HFC) applications ` Line extenders ` Trunk amplifiers ` Fiber deep-optical-node (N+0/1/2) ` Bridgers 52 NXP Semiconductors RF Manual 16th edition The NXP power doublers CGD104xH and CGD104xHi are ideal for use in line extenders and trunk amplifiers. They support fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. The GaAs HFET die process delivers high gain, excellent CTB and CSO ratings, and lower current. The new NXP CGY104x push-pull family is the first line-up on the market to combine very low noise, best-in-class distortion parameters, and low, “carbon footprint” capabilities. It delivers the best performance for the lowest power consumption, so it reduces OPEX and CO2 emissions All of NXP’s 1 GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high-power overstress capabilities, and extremely high ESD levels. As a result, they also reduce the cost of ownership. The GaAs die is inserted in an HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the module's high performance stable over a wide range of temperature. Assembly is fully automated and requires almost no human intervention, so repeatability remains very high. Upcoming products Additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of 32 dB. NXP is also developing a new, highly integrated power doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power gain with 60 dBmV output power and excellent ESD protection, for the ultimate in high-quality, distortionless devices. CATV 1 GHz power doublers CATV1GHzpowerdoublers CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi Typ 21 23 23 25 25 27 Slope cable equivalent (dB) Typ 1.5 1.5 1.5 1 1.5 0.5 - 2.0 Composite triple beat (dB) Typ -69 -69 -69 -69 -69 -73 Composite 2nd order distortion (dB) Typ -68 -68 -68 -68 -68 -68 Noise (@ fmax) (dB) Max 6 6 6 6 6 5 Total current consumption (mA) Typ 440 450 440 450 440 460 Frequency range (MHz) Range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 CGY1049 CGY1032 Focusapplications, products&technologies Parameters Power gain (dB) CATV 1 GHz push-pulls CATV1GHzpush-pulls Parameters CGY1041 CGY1043 CGY1047 Power gain (dB) Typ 22 24 28 30 33 Slope cable equivalent (dB) Typ 2 2 2 1.6 1.8 Composite triple beat (dB) Typ -62 -62 -64 -62 -62 Composite 2nd order distortion (dB) Typ -64 -64 -66 -64 -64 Noise (@ fmax) (dB) Max 5 5 4.5 5 5 Total current consumption (mA) Typ 250 250 250 250 265 Frequency range (MHz) Range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 CGD104xHi PAD H L OUT port 1 H L OUT port 2 H L OUT port 3 H L OUT port 4 CGD104xHi PAD PAD (N + 1) RF switch EQ CGD104xHi PAD CGD104xHi PAD bra822 An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi NXP Semiconductors RF Manual 16th edition 53 2.3TVandsatellite 2.3.1 LNAswithprogrammablegain&bypassoptionforimprovedtunerperformance NXP LNAs BGU703x &BGU704x for TVs/STBs Designed for high linearity and low noise, these 3.3 and 5 V wideband LNAs support multi-tuner applications in TVs, DVR/PVRs, and STBs operating between 40 MHz and 1 GHZ. A unique programmable gain with bypass mode compensates for tuner switch signal loss (important in multi-tuner systems), and improves overall system performance by 7 to 10 dB. Key features Internally biased Fixed Gp = 10 dB: BGU7031 (5 V), BGU7041 (3.3 V), and Fixed Gp = 14 dB: BGU7044 (3.3 V) Programmable between Gp = 10 dB and bypass: BGU7032 (5 V), BGU7042 (3.3 V), and programmable between Gp = 14 dB and bypass: BGU7045 (3.3 V) Programmable between Gp = 10 dB, 5 dB and bypass: BGU7033 (5 V) Flat gain between 40 MHz and 1 GHz Output power at 1 dB gain compression (PL(1 dB) ) ranging from 9 to 14 dBm Noise figure as low as 2.8 dB High linearity with an OIP3 of 29 dBm 75 Ω input and output impedance Power-down during bypass mode ESD protection >2 kV HBM, >1.5 kV CDM on all pins NXP’s BGU703x and BGU704x low-noise amplifiers (LNAs) upgrade overall picture quality with improved signal handling (NF, dynamic range), while reducing the number of external components. Key trends Multiple tuners in TV, DVR/PVR, and set-top box applications, requiring improved signal handling Use of 3.3 V Si tuner ICs, perfect match with our 3.3 V LNAs (BGU704x) All the devices can be used with discrete or Si can tuners, as well as with on-board tuners. They deliver more robust ESD performance compared to GaAs solutions, withstanding >2 kV human body model (HBM) and >1.5 kV charged device model (CDM). Applications Terrestrial and cable set-top boxes (STBs) Silicon and can tuners Personal and digital video recorders (PVRs and DVRs) Home networking and in-house signal distribution BGU703x evaluation board 54 NXP Semiconductors RF Manual 16th edition Produced in NXP’s own QUBiC4+ Si BiCMOS process, they improve signal handling by compensating for the signal loss at the tuner switch. This can improve system performance by as much as 7 to 10 dB. The BGU7031, BGU7041, and BGU7044 are LNAs with fixed gain. The BGU7032, BGU7042, and BGU7045 have an additional bypass mode, and the BGU7033 adds two gain levels along with the bypass mode. In bypass mode, the devices consume less than 5 mA of current. Integrated biasing and 75 Ω matching reduces footprint by eliminating as many as 15 components compared to discrete solutions. Type Package Frequency range @ Gain(1) NF PL(1dB) OIP3 FL(2) RLout RLin (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dB) 5 43 10 4.5 14 29 -0.2 12 18 GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18 Bypass 5 4 -2 2.5 - 29 -0.2 8 8 GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18 GP 5 dB 5 43 5 6 9 29 -0.2 12 17 Bypass 5 4 -2 2.5 - 29 -0.2 8 8 GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21 GP 10 dB 3.3 38 10 4 12 29 -0.2 12 21 Bypass 3.3 3 -2 2.5 - 29 -0.2 10 10 GP 14 dB 3.3 34 14 2.8 13 29 -0.2 12 20 GP 14 dB 3.3 34 14 2.8 13 29 -0.2 12 20 Bypass 3.3 3 -2 2.5 - 27 -0.2 10 9 Mode VCC ICC (V) GP 10 dB (MHz) BGU7031 SOT363 40 - 1000 BGU7032 SOT363 40 - 1000 BGU7033 SOT363 40 - 1000 BGU7041 SOT363 40 - 1000 BGU7042 SOT363 40 - 1000 BGU7044 SOT363 40 - 1000 BGU7045 SOT363 40 - 1000 Block diagram Focusapplications, products&technologies LNAs for set-top boxes (75 Ω) Application diagram of an active splitter with passive loop-through BGU703x/BGU704x VGA RF input surge CONVENTIONAL TUNER OR SILICON TUNER RF SW BF1108 or BF1118 RF output WB LNA BGU7031/BGU7041/BGU7044(optional) NXP Semiconductors RF Manual 16th edition brb403 55 2.3.2 CompletesatelliteportfolioforallLNBarchitectures NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technologies. Fully integrated Ku-band downconverters TFF101xHN The TFF101xHN is a family of fully integrated downconverters for Ku-band LNBs. They give the best RF performance in terms of phase noise, gain, and noise figure at the lowest current consumption in the market. Ku-band downconverter TFF101xHN/N1 for LNB ` Typical application: Universal single LNB & twin LNB ` Ultra-low current consumption: 52 mA over PVT ` Only 7 external components ` No inductors ` Single supply domain: 5 V ` Uses low-cost fundamental 25 MHz crystal ` High PL1dBo = 6 dBm / 3OIPo = 16 dBm ` Best-in-class PN < 1.4 deg RMS - 10 kHz to 13 MHz integration bandwidth ` Multiple gain types available - TFF1014HN/N1 36 dB - TFF1015HN/N1 39 dB - TFF1017HN/N1 42 dB - TFF1018HN/N1 45 dB ` Flat gain over frequency (< 2 dBpp) ` Input & output matched 50 Ω ` Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm) RF transistors BFU710F/730F The BFU710F and BFU730F are wideband RF transistors that can be used as an LNA or as a mixer for a DBS LNB in the Ku-band. In either application, they deliver good noise and linearity, a higher gain at a lower current consumption compared to their GaAs pHEMT equivalents, and the cost advantage of silicon. BFU710F as LNA in Ku-band LNB ` Typical application: LNA2 for single-output LNB ` Overall similar RF performance to GaAs pHemt LNAs ` Power consumption: 3.5 mA ` Single supply: 3/5/6 V ` High RF gain: 13.5 dB ` Low noise figure: 1.6 dB ` Linearity (OIP3): 12 dBm 56 NXP Semiconductors RF Manual 16th edition BFU710F as mixer in Ku-band LNB ` Typical application: Active mixer for single-output LNB ` Single supply 3/5/6 V ` Low power consumption: 2.5 mA ` LO drive < 0 dBm ` SSB noise figure < 8 dB (including BPF at the input) ` SSB conversion gain > 5 dB (including BPF at the input) ` Linearity (OIP3) > 0 dBm ` LO-RF isolation min 20 dB ` RF match better than 10 dB ` IF match better than 8 dB BFU730F as LNA in Ku-band LNB ` Typical application: LNA2 and LNA3 for multi-output LNB ` Overall similar RF performance to GaAs pHemt LNAs ` Power consumption: 11 mA ` Single supply 3/5/6 V ` Very high RF gain: 11.5 dB ` Low noise figure: 1.25 dB ` Linearity (OIP3) > 17 dBm ` Return loss > 10 dB MMICs BGA28xx as IF amplifiers (first stage & output stage) For compatibility with existing designs, the series uses market standard packages: the SOT363 and the pin-compliant SOT363F. The pinning is identical to NXP’s current gain block family, and the blocks deliver similar noise figures. New features include flatter gain, a positive gain slope, improved P1dB vs Icc, and no necessity for an output inductor. ` Internally matched at 50 Ω ` Gain slope > 0.5 dB Single supply voltage: 3.3 or 5 V Reverse isolation: > 30 dB up to 2 GHz Best-in-class power vs current consumption Noise figure: 4 to 6 dB at 1 GHz Unconditionally stable (K > 1) High-compression-point models work without output inductor 6-pin SOT363 plastic SMD package These products – the integrated downconverters TFF101xHN, the wideband transistors BFU710F/730F for LNA and mixer functionality, and the BGA28xx series of IF MMICs – are the most recent additions to NXP’s leading portfolio for satellite LNB. They join the other discrete products, including oscillators, amplifiers, and switches, to provide complete coverage for all LNB architectures. Since the ICs, transistors, and the MMICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+ process, they offer better overall RF performance and are more robust than their GaAs equivalents and offer the added cost advantage of silicon. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. Satellite outdoor unit, twin low noise block (LNB) with integrated mixer/ oscillator/ downconverter LNA2 H LNA3 COMBINER LNA1 SPLITTER LNA3 BPF LNA2 LNA3 COMBINER SPLITTER LNA1 IF out 1 shared crystal LNA3 V TFF1014 SWITCHED TO LOW-BAND BPF TFF1014 IF out 2 SWITCHED TO HIGH-BAND 22 kHz TONE DETECT 3 H/V DETECT aaa-002896 Note: Also see section 1.3.4 Satellite outdoor unit, twin low noise block (LNB) with integrated mixer/ oscillator/ downconverter Fully integrated mixer / oscillator / downconverter LB/HB/H/V detection pHemt bias LO oscillator control linear regulated 5 V BIAS V/T LIN HB Hor 2nd 10.7 ~ 12.75 GHz BPF 1st Ver 0.95 ~ 1.9 GHz/ 1.1 ~ 2.15 GHz mixer IF amps BFU710F 25.000 MHz PLL/VCO TFF101xHN LOOP FILTER 001aan954 NXP Semiconductors RF Manual 16th edition 57 Focusapplications, products&technologies ` ` ` ` ` ` ` 2.3.3 VSAT,2-waycommunicationviasatellite Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308 with NXP's Ku-/ Ka-band RF LO generators The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise localoscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a highperformance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308 from Intelsat. VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a low noise block (LNB) for receiving the downlink signals, and a block Upconverter (BUC). The VSAT ICs can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). Features ` Phase noise compliant with IESS-308 (Intelsat) ` Differential input and output ` Divider settings at 16, 32, 64, 128, or 256 ` Lock-detect output ` SiGe:C technology (120 GHz fT process) ` HVQFN24 (SOT616-1) package Applications ` VSAT block upconverters ` VSAT down conversion ` Local oscillator signal generation To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequency-locked to the reference. The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P and OUT-N) have been reserved to match a typical layout using a linewidth of Z = 50 Ω microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC. 58 NXP Semiconductors RF Manual 16th edition Satellite HUB Focusapplications, products&technologies VSATs Typical VSAT network Complete LO generator for linear BUC with TFF1003HN Type fIN(REF) Package VCC ICC PLL PLLphasenoise @N=64@100kHz Typ Outputbuffer fo(RF) Max Input Po RLout(RF) Si Typ Max Min (MHz) (V) (mA) (dBc/Hz) (GHz) (dBm) (dB) (dBm) TFF1003HN SOT616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10 TFF1007HN SOT616 228.78 - 234.38 3.3 130 -104 14.62 - 15 -3 -10 -10 Icc(mA) Singlesupply (V) RFgain(dB) NF(dB) OIP3(dBm) Ku-band LNA2 for single output LNB 3.5 3/5/6 13.5 1.6 12 BFU730F Ku-band LNA2 and LNA3 for multiple output LNB 11 3/5/6 11.5 1.25 17 Type Application Icc(mA) Singlesupply (V) LOdrive SSBNF(dB) SSBconversionLO-RFisolation gain(dB) (dB) BFU710F Ku-band active mixer for single output LNB 2.5 3/5/6 < 0 dBm < 8 dB Type Application BFU710F > 5 dB min 20 NXP Semiconductors RF Manual 16th edition 59 2.3.4 LownoiseLOgeneratorsformicrowave&mmWaveradios NXP LO generators (integrated VCO/PLL) TFF11xxxHN Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower the total cost of ownership. These low noise local-oscillator (LO) generators, optimized for use in many different microwave applications between 7 and 15 GHz, deliver highly accurate performance in a small footprint. They require no alignment or frequency modification on the production line, so they simplify manufacturing. High integration saves board space and makes design-in easier, for lower overall cost and faster development. Features ` TFF11xxxHN family: lowest-noise LO generators for a full family in 7 to 15 GHz range ` Maximum power consumption for all types is 330 mW (typ) ` Phase-noise compliant with IESS-308 (Intelsat) ` Proven QUBiC4X SiGe:C technology (120 GHz fT process) ` External loop filter ` Differential input and output ` Lock-detect output ` Internally stabilized voltage reference for loop filter ` 24-pin HVQFN (SOT616-1) package Applications : TFF11xxxHN family ` Industrial/medical test and measurement equipment ` Electronic warfare (EW) ` Electronic countermeasures (ECM) ` Point-to-point ` Point-to-multipoint ` Satellite communication/VSAT ` Radar systems 60 NXP Semiconductors RF Manual 16th edition Since these ICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C process, they offer better overall RF performance, are more robust than their GaAs equivalents, and consume much less power. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. The TFF1003HN is the basis for the entire family of LO generators. It has VCO coverage of 12.8 to 13.05 GHz and accepts input signals from 50 to 816 MHz. The divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a stability of ±2 dB. The family of LO generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 GHz. The RF performance of all these devices is consistent with the TFF1003HN. All the LO generators have low power dissipation (330 mW typ), and all are available in a space-saving 24-pin HVQFN package. Full portfolio overview of low noise LO generators for general microwave applications in section 3.4.4 2.4Portabledevices 2.4.1 ThebestreceptionofGNSSsignalswiththesmallestfootprint NXP SiGe:C GPS LNAs BGU700x/BGU8007 NXP's GPS low-noise amplifiers offer the best reception of weak signals because of dynamic suppression of strong cellular and WLAN transmit signals. Moreover, as only two external components are required, Key features Low noise figure: 0.75 dB System-optimized gain of 16.5 or 19 dB Adaptive biasing dynamically suppresses strong cellular and WLAN transmit signals, resulting in improved linearity of 10 dB better IP3 under -40 to -20 dBm jamming conditions and effective GPS output with jammer powers up to -15 dBm AEC-Q100 qualified (BGU7004, BGU7008) for highest reliability in harsh conditions Only two external components required Small 6-pin leadless package: 1.45 x 1.0 x 0.5 mm Key benefits Maintains optimal GPS signal reception for as long as possible Significant PCB size savings (50%) Lower component cost (10%) Applications Smart phones, feature phones Tablets Personal Navigation Devices (PNDs) Digital Still Camera (DSCs) Digital Video Camera (DVCs) RF front-end modules (used in phones) Complete GPS chipset modules (used in DSCs) Automotive applications (BGU7004/8): toll collection, emergency call Focusapplications, products&technologies designers can save up to 50% in PCB size and 10% in component cost. These SiGe:C low-noise amplifiers (LNAs) improve the reception of GPS signals, including GloNass and Galileo. Available in extremely small 6-pin packages, they reduce footprint, lower cost, and enhance reception in systems that use an active or patch antenna. GPS has become a standard feature in a very wide range of consumer products, from personal navigation devices to digital video cameras, watches, electric cars, and more. GPS signal power levels are weak and below the noise floor at -155 dBm. In many of these products, especially smart phones, strong transmitters such as WLAN and cellular can drive the GPS LNA into compression. When the GPS LNA is in compression, it has lower gain, and that can worsen GPS reception. Also, when the LNA is in compression, it generates intermodulation products and harmonics from the transmitter signals, which can overpower the weak GPS signals and lead to no GPS reception. The NXP BGU700x/BGU8007 series use adaptive biasing to immediately detect any output power from jammers, and compensate by temporarily increasing the current. As a result, optimal GPS signal reception is maintained for as long as possible. Each device in the BGU700x/BGU8007 series requires only one input matching inductor and one supply decoupling capacitor to complete the design. This creates a very compact design and lowers the bill of materials. Designers can save up to 50% in PCB size and 10% in component cost. For example, the BGU7005 is in a 1.45 x 1 mm package with application area at only 4.53 mm2. This is 50% smaller than a comparable solution with a 9.06 mm2 application area. NXP Semiconductors RF Manual 16th edition 61 Application diagram external active antenna LNA BPF SPDT embedded antenna LNA BPF BPF GPS RECEIVER IC 001aan955 Smallest footprint Type MMIC* Packagesize Package X Y Pins SMD's SMDsize Appl. Pitch Area X Y SMD's area Appl.area mm2 mm mm mm # mm mm2 # mm mm mm2 1.45 x 1 1.7 1.25 6 0.5 2.13 2 1.5 0.8 2.4 4.53 Wafer-level package 1.26 x 0.86 1.5 1.1 6 0.4 1.65 6 1.5 0.8 7.2 8.85 Competitor Wafer-level package 0.86 x 0.86 1.1 1.1 4 0.4 1.21 4 1.5 0.8 4.8 6.01 Competitor Thin small leadless package 2 x 1.3 2.25 1.55 6 0.5 3.49 4 1.5 0.8 4.8 8.29 Competitor Thin small leadless package 1.4 x 1.26 1.65 1.5 6 0.48 2.48 4 1.5 0.8 4.8 7.28 Competitor Thin small outline non-leaded 1.5 x 1.5 1.75 1.75 6 0.5 3.06 5 1.5 0.8 6 9.06 BGU7005/7 SOT886 Competitor * Includes keep-out area on PCB (a commonly used assembly rule) SiGe:C GPS LNAs Supply voltage Supply current Insertion power gain Noise figure Input power at 1 dB gain compression Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz Vcc Icc |s21|2 NF PL(1dB) IP3i (V) (mA) (dB) (dB) (dBm) (dBm) Vcc = 1.8 V, Typ Vcc = 2.2 V, Min Vcc = 2.2 V, Typ Vcc = 2.5 V, Icc = 5 mA - - 9 - - - 5 12 - -14 -11 - - - -11 -8 - - 5 9 - - - 5 12 - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 - -15 -12 - - - -14 -11 - - 1 4 - - - 2 5 1 4 - - 2 5 - - - 18.3 20 0.8 - - BGU7004^ SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - - BGU7005 SOT886 1.5 2.85 - 4.5 - - 16.5* - 0.9 - BGU7007 SOT886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - BGU7008^ SOT886 1.5 2.85 - 4.8 - - 18.5** - 0.9 - BGU8007 SOT886 1.5 2.2 - 4.6 - - 19.0*** - 0.75# * 16.5 dB without jammer / 17.5 dB with jammer ** 18.5 dB without jammer / 19.5 dB with jammer *** 19.0 dB without jammer / 20.5 dB with jammer 62 NXP Semiconductors RF Manual 16th edition Typ Max Typ -15 -12 - - - - -20 - - ^ AEC-Q101 qualified (some limitations apply) # Evaluation board losses excluded -13 -10 - - - Vcc = 2.85 V, Typ Vcc = 1.5 V, Typ 0 5 16 Vcc = 2.85 V, Min Vcc = 1.5 V, Min - - 15 Vcc = 1.8 V, Min Vcc = 2.85 V, Typ - - - Vcc = 2.5 V, Icc = 5 mA - -8 3 Vcc = 2.85 V, Min - -11 2.85 Max Vcc = 2.2 V, Typ - - Min 2.2 Min Vcc = 2.2 V, Min - - Max SOT891 Vcc = 1.8 V, Typ - - Typ Vcc = 1.5 V, Typ - -14 -11 Min BGU7003 Vcc = 1.8 V, Min Package Vcc = 1.5 V, Min Type @ 1.575 GHz 2.5Industrial,scientific&medical 2.5.1 MedicalapplicationsdrivenbyRFpower:Fromimagingtocancertreatment, aflexibleandversatiletechnologyinthedoctor’stoolbox RF technology is making its way into all kinds of medical applications, ranging from the well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment, and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation). One clear trend is the increasing share of RF-based technologies for ablation. Another is the achieve higher spatial resolution, better control, and shorter treatment times. RF radiation is not a new technology in medicine. It is currently used for imaging purposes in MRI (magnetic resonance imaging) and EPRI (electron paramagnetic resonance imaging), techniques that employ frequencies from a few megahertz to about 500 MHz. Other well-known external heat-treatments to rejuvenate skin or relieve muscle pain make use of frequencies around 480 kHz – not too demanding in terms of RF. Surgical equipment to cut and simultaneously coagulate blood vessels runs off RF at about 5 MHz. The latter application belongs to a class of treatment techniques that is growing rapidly and uses RF radiation to deposit energy locally at various parts of the body – in general to “ablate” (remove) unwanted tissue. Inside the body, the RF energy heats the surrounding tissue until it is desiccated and/or necrotized. The damaged tissue will later be re-absorbed by the surrounding, living tissue. Further application examples for RF ablation include cancer treatment in the lung, kidney, breast, bone and liver, removal of varicose veins, treatment of heart arrhythmia, and a growing list of other applications that benefit from the high control and feedback possible with RF. Another advantage of RF in this context is the fact that it can be applied via small catheters ending in antennas that deploy the RF signal. Unlike older, direct-current techniques, the tissue is heated only very locally around the antenna. Neighboring nerves (and the heart) are not stimulated. This led to the development of a variety of specialized catheters, used during minimally invasive surgery, along with ultrasound or X-ray imaging to determine the exact location of the RF-active part. During the treatment, the impedance of the surrounding tissue can be monitored and the end-point determined. With proper catheters, one can even achieve “self limitation” due to the reduced uptake of RF energy in desiccated tissue. Likewise, the RF frequency can be used to tune the energy deposition zone around the catheter: the higher the frequency, the smaller the penetration depth – and hence the volume to deposit the RF energy – in the watery tissue. With the trend towards higher RF frequencies and powers, the complexity of RF generators and the requirements for the device technology also increase. Above 10 MHz, say, up to 3.8 GHz, the technology of choice for power amplifiers is Si LDMOS (laterally diffused metal oxide semiconductor). This technology has proven to be powerful, efficient, and rugged in base stations, radar systems, broadcast transmitters, and other industrial, scientific, and medical (ISM) applications. LDMOS is available from up to 50 V supply to achieve power levels up to 1,200 W per single device, with outstanding ruggedness and high gain and efficiency. To drive and control the LDMOS power amplifier stages, it takes voltage-controlled oscillators, phase locked loops, and medium power amplifiers. These parts of the RF signal chain are conveniently available based on reliable and high-volume SiGe:C (QUBiC) semiconductor technologies. Going a step further, one can even use high-speed converters to drive the signal chain entirely from the digital domain, for full and easy control over the shape and modulation of the applied RF. RF implications These in-situ medical applications and, in general, most of the ISM applications, usually form highly mismatched RF loads during some part of the usage cycle. This in turn means that, without protection or other measures, all of the "injected" RF power reflects back into the final stage of the amplifier and needs to be dissipated in the transistor(s), and most likely destroys the device(s) if this situation lasts too long. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This device ruggedness, or the ability to withstand “harsh” RF conditions in general, be it mismatch or extremely short pulse rise and fall times, is essential for reliable device performance. RF power companies have gone to great lengths to achieve best-in-class device ruggedness. The technologies have been hardened under the most stringent ruggedness tests during development, which is particularly true for the 50 V technology. Among other factors, the base resistance of the parasitic bipolar and the drain extension of the LDMOS device play key roles in this respect. This ruggedness, combined with the power density and the high efficiencies achievable, make LDMOS the preferred technology for RF power amplifiers up to 3.8 GHz. NXP Semiconductors RF Manual 16th edition 63 Focusapplications, products&technologies trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to 2.5.2 RF-drivenplasmalighting: Thenextrevolutioninlightsourcesarepoweredbysolid-stateRFtechnology Recent developments in RF power technology, such as improved cost structure, ruggedness, and power levels of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’. All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to create and power a bright plasma, the color of which can be tuned by the composition of its constituents. This technology works without any additional electrodes in the bulb, unlike standard high-intensity discharge lamps. No electrodes means very long operating lifetimes, since the contamination and wire erosion that lead to decreased efficiency and eventual lamp failure are precluded. The RF light source lives up to 50,000 hrs when it reaches 50% of its original light output. Typical high-intensity discharge lamps, by comparison, achieve 20,000 hrs operating life. Another strong point of the plasma light is its efficiency: 1 W of RF power is converted to 130-140 lm of light. This leads to very compact, very bright lamps that easily emit 10,000 to 20,000 lm of white light with a close-to-sunlight color rendition. The key enabler for the RF light source is RF technology, based on Si LDMOS RF power transistors. LDMOS technology operating at 28 V is the leading RF power technology for cellular base stations or broadcast transmitters as final amplifier stages in the frequency range between a few MHz up to 3.8 GHz. Recently, another LDMOS format, 50 V LDMOS, has emerged for use in broadcast, ISM, defense and avionics applications. It combines high power density to achieve power levels up to 1,200 W per single device and outstanding ruggedness, with high gain and efficiency at frequencies of up to 1.5 GHz. Comparison of lighting technologies The table below summarizes currently available technologies that generate bright light with varying degrees of efficiency. It lists a few key parameters, including lifetime, luminous flux, efficacy, color rendition index, color temperature, start-up time, and re-strike time (time to start after switch-off from normal operation). Color Start-up Re-strike Lifetime Luminous Efficacy Color flux temperature time time (lm/W) rendering (hrs) (klm) (K) (s) (s) Incandescent 2,000 1,700 10 to 17 100 3200 0.1 0.1 Fluorescent 10,500 3,000 115 51 to 76 2940 to 6430 0.3 0.1 LED 25,000 130 60 to 100 30 6000 0.1 0.1 Type HID (highintensity discharge) 20,000 25,000 65 to 115 40 to 94 4000 to 5400 60 480 RF plasma 50,000 25,000 100 to140 70 to 94 4000 to 5500 30 25 Table 1: Comparison of light generation. Note: numbers are only valid for a qualitative comparison. Source: www.wikipedia.org and references therein. 64 NXP Semiconductors RF Manual 16th edition The plasma light source is among the brightest and most efficient available to date and boasts a very long life time. Important to note is the high brightness per bulb: much brighter than LEDs, for example. Consequently, it takes multiple LEDs to generate the light output of a single plasma light source. Hence, LED luminaries for street lighting will be considerably larger than those for plasma light sources. RF implications The RF plasma lighting sources can operate at a wide range of RF frequencies, but initial applications typically focus at frequencies of around a few hundred megahertz. At these frequencies both the 28 and 50 V LDMOS technologies can be used, yielding high efficiency values of 70% to more than 80% and low-heat dissipation making compact plasma lamp designs possible. The RF-driven plasma light is a perfect example of novel applications that can be powered by RF energy in the industrial, scientific, and medical (ISM) realm. Established technologies use RF to pump a gas discharge in a laser cavity. These "gas discharge" applications and, in general, most of the ISM applications, typically form highly mismatched RF loads during some part of the usage cycle. In the case of gas discharges, for example, the gas cavity acts as an "open circuit" during switch-on. This in turn means that without protection or other measures, all of the "injected" RF power reflected back into the final stage of the amplifier needs to be dissipated in the transistor(s) right there and most likely destroys the device(s) if this situation lasts too long. After the discharge strikes, the load impedance reverts to "matched," eventually, and the transistor sees an acceptable load. Obviously, these mismatched conditions occur every time the plasma is "switched on,” exerting strain on the finals. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This ruggedness, combined with the high power density and efficiency achievable, make LDMOS the preferred technology for RF lighting and other equally demanding applications in the ISM realm. 2.5.3 QUBiC4SiandSiGe:CtransistorsforanyRFfunction NXP wideband transistors BFU6x0F & BFU7x0F Key features 40/110 GHz transition frequency allows for applications up to 18 GHz and beyond High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB High linearity of 34 dBm (OIP3) at 1.8 GHz Consuming only 3 mA to generate 13.5 dB gain at 12 GHz Plastic surface-mount SOT343F package for high performance and easy manufacturing can be used as low-noise amplifiers, while the BFUx60F and BFUx90F can be used as high-linearity and high-output amplifiers. Other options include using these transistors as buffer amplifiers, mixers, and oscillators. Higher transition frequencies (40 to 110 GHz) enable higher application frequencies (24/77 GHz car radar, 18 GHz Ka band, 3.5-3.7 WiMas, etc.), and the devices meet the low current requirements of wideband applications. Applications Wideband applications that require - Low-noise amplifiers - High linearity and high output amplifiers - Buffer amplifiers - Mixers - Oscillators As a result, these devices are ideal for use in a very wide range of applications: second and third LNA stage and mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio (SDARS) LNA, C-band/X-band high-output buffer amplifiers, AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular (LTE, UMTS), mobile TV, RKE, high-linearity applications, low current battery-equipped applications, low-noise amplifiers for microwave communications systems, medium output power applications, microwave driver/buffer applications, and more. The devices in this family of sixth- (Si) and seventh- (SiGe:C) generation RF transistors can be used to perform nearly any RF function. For example, the BFUx10F, BFUx30F, BFU725/N1 Selection guide – function Function LNAs,mixers,frequencymultipliers,buffers Frequency range TypeBand High-linearity,high-outputamplifiers&drivers Oscillators <6GHz 6GHz–12GHz 12GHz– +18GHz <6GHz 6GHz–12GHz 12GHz–18GHz <6GHz 6GHz–12GHz 12GHz– +18GHz L,S,C X,Kulow Kuhigh,Ka L,S,C X,Kulow Kuhigh L,S,C X,Kulow Kuhigh,Ka • • • • • • • • • • • BFU610F BFU630F BFU660F BFU690F BFU725F/N1 BFU710F BFU730F BFU760F BFU790F • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • Red = application note available on NXP.com Typenumber Package Package name generation fT[typ](GHz) VCEO[max](V) IC[max](mA) Ptot[max] (mW) Polarity NF(dB) @f(GHz) @IC(mA) @VCE(V) NF(dB) @f(GHz) @IC(mA) @VCE(V) PL(1dB)[typ] (dBm) @f(GHz) @IC(mA) @VCE(V) IP3[typ] (dBm) @f(GHz) @IC(mA) @VCE(V) Selection guide – specification BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F DFP4 DFP4 DFP4 DFP4 DFP4 DFP4 DFP4 DFP4 DFP4 6th 6th 6th 6th 7th 7th 7th 7th 7th 15 21 21 18 43 55 55 45 25 5.5 5.5 5.5 5.5 2.8 2.8 2.8 2.8 2.8 10 30 60 100 10 40 30 70 100 136 200 225 230 136 136 197 220 234 NPN NPN NPN NPN NPN NPN NPN NPN NPN 1.1 0.85 0.6 0.6 0.85 0.7 0.8 0.4 0.4 2.4 2.4 1.5 1.5 5.8 5.8 5.8 1.5 1.5 2 3 6 15 2 5 5 12 20 2 2 2 2 2 2 2 2 2 1.7 1.3 1.2 0.7 1.45 1.1 1.3 0.5 0.5 5.8 5.8 5.8 2.4 12 12 12 2.4 2.4 2 3 6 15 2 5 5 12 20 2 2 2 2 2 2 2 2 2 3 12.5 18.5 20 4.5 8 12.5 18.5 19 5.8 5.8 5.8 2.4 5.8 5.8 5.8 5.8 2.4 10 30 60 70 5 25 15 30 60 1.5 2.5 4 4 2.5 2 2.5 2.5 2.5 18 27.5 28 33 19.5 19 29 33 34 5.8 5.8 5.8 2.4 5.8 5.8 5.8 5.8 2.4 10 30 40 70 10 25 20 30 30 1.5 2.5 4 4 1.5 2 2.5 2.5 2.5 NXP Semiconductors RF Manual 16th edition 65 Focusapplications, products&technologies These next-generation devices offer the best RF noise figure versus gain performance, drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. 2.5.4 Buildingondecadesofinnovationinmicrowaveandradar NXP builds on more than 50 years of history in semiconductor technology and component design. For more than three decades we have led in providing high-performance RF technologies for microwave applications. The company has built a strong position in the field of RF small-signal and power transistors for microwave amplifiers with best-in-class Si devices and processing technologies. We were the first semiconductor company to supply S-band transistors (2700 to 3500 MHz) based on laterally diffused metal-oxide-silicon (LDMOS). To further strengthen our position towards the future, we are currently developing new high-power and high-bandwidth technologies based on gallium nitride (GaN) material. Another enabling technology is NXP’s BICMOS process QUBiC, which is available in several variants with fT up to 200 GHz, each specialized to address specific small-signal RF applications. The product portfolio encompasses: - Low-noise amplifiers (LNAs) - Variable-gain amplifiers (VGAs) - Mixers - Local oscillators (LOs) - LO generators NXP now also focuses on architectural breakthroughs and has developed highly integrated products for microwave and millimeter wave. One example is a family of LO generators from 7 to 15 GHz with integrated PLL and VCO. Another example is an integrated RF power module in S-band (3.1-3.5 GHz) at 200 W. RF small-signal product highlight Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators TFF1xxxHN are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership. 66 NXP Semiconductors RF Manual 16th edition Features ` Lowest noise LO generators for 7 to 15 GHz range ` Maximum power consumption for all types, typical 330 mW ` Phase-noise compliant with IESS-308 (Intelsat) ` Proven QUBiC4X SiGe:C technology (120 GHz fT process) ` External loop filter ` Differential input and output ` Lock-detect output ` Internally stabilized voltage reference for loop filter RF power product highlight The BLS6G2933P-200 is the first LDMOS-based, industrystandard pallet produced by NXP. This pallet offers more than 40% efficiency and includes the complete bias network for S-band applications. Microwave applications and bands of operation System Frequency VHF and UHF <1 GHz L-band 1200 - 1400 MHz S-band 2700 - 3500 MHz X-band 8000 - 12000 MHz Commercialavionics DME (Distance Measuring Equipment) 978 - 1215 MHz Transponders Mode A / Mode S / Mode C / TCAS 1030 - 1090 MHz Militaryavionics IFF transponders (Identification, Friend or Foe) 1030 - 1090 MHz TACAN (Tactical Air Navigation) 960 - 1215 MHz JTIDS / MIDS (Joint Tactical Information Distribution System) 960 - 1215 MHz Marine radar Focusapplications, products&technologies Features ` Reduces component count and considerably simplifies radar system design ` P1 dB output power 200 W ` Efficiency > 40% ` Industry-standard footprint ` 50 Ω in/out matched for entire bandwidth ` Lightweight heat sink included ` The advantages of LDMOS over Bipolar - Higher gain and better efficiency - Better ruggedness – overdrive without risk to 5 dB - Improved pulse droop and insertion phase - Consistent performance – no tuning required - Improved thermal characteristics – no thermal runaway - Non-toxic packaging and RoHS-compliance 9300 - 9500 MHz For a complete list of products, see the respective smallsignal and power microwave pages in chapter 3 NXP Semiconductors RF Manual 16th edition 67 2.5.5 Digitalbroadcastingatitsbest The BLF881 / BLF888A transistor line-up enables today’s most powerful and efficient digital broadcast transmitter applications BLF881 This transistor is based on NXP’s 50 V LDMOS technology and features 120 W RF output power for broadcast transmitter and industrial applications. An unmatched device, the BLF881 can be used in the HF to 1 GHz range. The excellent ruggedness and broadband performance of this device make it ideal for digital transmitter applications – either on its own or as a driver in combination with the high-power transistor BLF888A. The BLF881 is also available in an earless version, the BLF881S, which enables an even more compact PCB design. BLF888A Running from a 50 V supply voltage, the BLF888A is a 600 W LDMOS RF power transistor for broadcast transmitter and industrial applications. Being a matched device, the BLF888A is optimized for digital signal broadcasting and can deliver 120 W average DVB-T output power over the full UHF band from 470 MHz to 860 MHz with 20 dB power gain and 31% drain efficiency. The excellent ruggedness of this transistor (it withstands a VSWR in excess of 40:1) makes it the ultimate choice as final stage for digital transmitter applications – ideally accompanied by a BLF881 as the driver. This device is also available in an earless package, denoted BLF888AS, to enable surface-mount assembly processes and take optimum advantage of the very low thermal resistance of the package. Key features and benefits ` Excellent efficiency and reliability ` Highest power levels in the market ` Best-in-class ruggedness designed into all devices ` Best broadband performance ` Easy power control ` Best-in-class design support ` Low thermal resistance design for unrivalled reliability ` Advanced flange material for optimum thermal behavior and reliability ` Designed for broadband operation (470 to 860 MHz) Key applications ` Analog and digital TV transmitters typ. 0.5 kW DVB-T Driver stages 8× final TV exciter DVB-T harmonic filter power monitor typ. 5 kW DVB-T output power amplifiers Type Product BLF642 BLF884P(S) BLF879P BLF888A(S) BLF888B(S) BLF881(S) Driver 68 Final brb339 fmin(MHz) fmax(MHz) P1dB(W) Matching VDS(V) PL(W) η D(%) Gp(dB) Testsignal Package 1 470 470 470 470 1 1400 860 860 860 860 1000 35 300 500 600 600 140 I I I I - 32 50 42 50 50 50 35 150 200 250 250 140 63 46 47 46 46 49 19 21 21 21 21 21 CW CW CW CW CW CW SOT467C SOT1121 SOT539A SOT539 SOT539 SOT467 NXP Semiconductors RF Manual 16th edition 2.5.6 Settingthebenchmarkforultralow-powerandhigh-performancewirelessconnectivitysolutions NXPs JN5148/2 wireless microcontroller platform with chipsets, modules, and supporting software NXP provides a complete package for the development of IEEE802.15.4-based wireless network solutions, incorporating all the necessary hardware and software components. NXP’s JN514x range of wireless microcontroller chips provides the optimum hardware platform for designing wireless network nodes that combine high-performance processing and radio communications. NXP also supplies JN514x wireless microcontrollers mounted on modules, and evaluation kits that simplify the development of custom Products ` JN5142-J01 for JenNet-IP Smart Devices, JN5148-J01 for JenNet-IP Gateways ` JN5148-001 for JenNet and IEEE802.15.4, JN5142-001 for RF4CE and IEEE802.15.4 ` JN5148-Z01 for ZigBee applications ` JN5148-001-M00, JN5148-001-M03, JN5148-001-M04: modules for JenNet and IEEE802.15.4 Key features ` Ultra low-power MCU together with an IEEE802.15.4compliant radio transceiver ` Enhanced 32-bit RISC processor for high performance and low power ` On-chip ROM and RAM for storage of application, networking stack, and software libraries ` A rich mix of analog and digital peripherals ` Low-current solution for long battery-life ` Standard-power and high-power modules ` Software Developer’s Kit (SDK), including JenNet, JenNet-IP and ZigBee networking stacks Software A selection of network protocol stacks, based on the industrystandard IEEE802.15.4, is available to support the wireless connectivity requirements of your application. These include JenNet, JenNet-IP, and ZigBee PRO, which are provided as a set of software libraries. JenNet is suitable for all proprietary applications. ZigBee PRO is used for smart energy and other applications where ZigBee interoperability is required. JenNet-IP provides IPv6 connectivity to the end node and is rapidly emerging as a standard for lighting and automation applications in buildings. Evaluation kit Key applications ` Smart lighting / smart energy / smart grid ` Utilities metering ` Home and commercial building automation and control ` Remote control ` Security systems ` Location-aware services – eg asset management NXP Semiconductors RF Manual 16th edition 69 Focusapplications, products&technologies applications. 2.6Technology 2.6.1 ThefirstmainstreamsemiconductorcompanytoofferGaNproducts NXP Galium-Nitride (GaN) broadband amplifiers A disruptive technology, setting new performance boundaries for RF power amplifiers If independent market research claims come true, GaN product sales will exceed 300 Musd in 2014. This can only happen if GaN is made available through mainstream semiconductor companies, and NXP is the first to make this happen. So, what is it about GaN and RF power applications ? Simply put, GaN makes a step increase in efficiency and power density performance over Si LDMOS in most applications. This can be quantified in the Johnson’s Figure of Merit (FoM) – a combination of significant RF performance variables that has a baseline for Si at 1 and leads to a FoM for GaN of 324. To put this into some context, GaAs, another commonly used compound material in RF, has a FoM of 1.44. With such a high FoM rating, GaN truly represents a breakthrough technology. in product reliability and cost, and give our customers a high degree of confidence in the supply chain. It's part of what's needed to take GaN to the mainstream. GaN products are termed High-Electron Mobility Transistors (HEMT), a name that captures one of the intrinsic benefits of GaN: the high electron drift velocity. These transistors are depletion-mode devices, that is, devices that are normally on, without the need for applying a gate bias. A negative gate bias will be needed to switch the transistors off. This biasing is not straightforward, but at NXP, we've developed complete solutions (not just individual components) that include a tried and tested bias circuit. We also provide continuous application support throughout the life of the product. Next-generation GaN devices from NXP will be super-efficient, enabling a breakthrough in performance for the largest RF power market segment: cellular base stations. In turn this technology will enable a departure from linear amplifier topologies with the onset of switched mode power amplifier (SMPA) concepts. NXP’s commitment to exploit the technology in a full portfolio of products will also lead to products for higher frequency applications up to 10 GHz. The first NXP GaN products will be unmatched broadband amplifiers for use in applications requiring high RF performance across a wide range of frequencies up to 3.5 GHz. NXP’s first generation GaN process is designed for products operating from a 50V supply voltage, delivering best-in-class efficiency and linearity. The products will use industry-standard package footprints enabling customers to adopt NXP’s products into existing designs without changing the mechanical design. A further advantage of GaN is that it is a very hard structure able to withstand very high temperatures. NXP’s GaN transistors will be specified to a maximum temperature of 250 °C, compared to 225 °C for Si LDMOS. Special packages are required to support such high temperatures. In this area, NXP's GaN customers benefit from our 30-year legacy in RF power products, and our large industrial base. As a GaN supplier, we deliver excellence GaN RF power amplifiers Type fmin(MHz) fmax(MHz) Pout(W) Matching CLF1G0035-50 0 3500 CLF1G0035-100 0 CLF1G0035-200 0 CLF1G0060-10 VDS(V) η D(%) Gp(dB) Test signal Package Planned Applications release 54 14.2 Pulsed SOT467 Q312 50 - 50 3500 100 - 50 52 14.8 Pulsed SOT467 Q412 3500 200 - 50 50 14.2 Pulsed SOT1228 Q313 0 6000 10 - 50 54 14 Pulsed SOT1227 Q113 CLF1G0060-30 0 6000 30 - 50 54 14 Pulsed SOT1227 Q113 CLF2G2536-100 CLF2G2536-300 CLF3G4060-30 CLF3G4060-350 2500 2500 4000 4000 3600 3600 6000 6000 100 300 30 350 I/O I/O I/O I/O 28 28 28 28 65 65 55 55 13 13 13 13 Pulsed Pulsed Pulsed Pulsed SOT1135 SOT502 SOT1135 SOT502 Q413 Q413 Q114 Q114 70 NXP Semiconductors RF Manual 16th edition Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, S-band Cellular, WiMAX, S-band C-band C-band 2.6.2 CompletingNXP'sRFpowertransistoroffering:productsinplasticpackages(OMP) NXP is currently developing a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range of plastic devices will complement the extensive range of RF power products that NXP offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz. ` Final transistors in OMP package (SOT502-sized) ranging from 140 to 200 W in frequency bands from 730 MHz to 2.2 GHz ` Final transistors in OMP package (SOT502-sized) ranging from 3 to 500 W in ISM frequency bands from a few MHz up to 2.45 GHz Focusapplications, products&technologies Products in development ` Single-stage broadband drivers in HSOP-outlines, from 3 to 10 W ` Single-stage OMP drivers from 25 to 45 W, replacing their ceramic equivalents for cost-sensitive applications ` Dual-stage MMICs from 30 to 60 W that can be used as high-gain drivers or combined as low-power dual-stage Doherty amplifiers ` Fully integrated plug-and-play Doherty PAs in a single package (50 to 100 W) Some of these products are available for sampling now, while the rest of the portfolio will be rolled out throughout 2012. RF power products in plastic packages (OMP) Type BLP7G22-10 BLM7G22S-60PB(G) BLP7G07S-140P(G) BLP7G09S-140P(G) fmin (MHz) fmax (MHz) 700 2000 700 900 2200 2200 900 1000 P1dB Matching Package (W) 10 60 140 140 I/O O O SOT1179 SOT1212 SOT1224 SOT1224 Description Gen7 OMP LDMOS transistor for WCDMA & GSM applications Gen7 LDMOS MMIC for WCDMA applications (gull-wing) Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) NXP Semiconductors RF Manual 16th edition 71 2.6.3 LookingforaleaderinSiGe:C?Youjustfoundus! NXP QUBiC4 process technology NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two highvolume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field. There are three QUBiC4 variants, each with its own benefits for specific application areas QUBiC4+ The QUBiC4+ BiCMOS process features 0.25 μm CMOS with 5 metal layers for integration of dense digital logic-based smart functionality, a rich set of active and passive devices for high-frequency mixed-signal designs, including thick top metal layers for high-quality inductors. The device set includes 35 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz fT VPNPs, a 28 GHz high-voltage NPN with 5.9 V breakdown voltage, differential and single-ended varicaps with Q-factor > 30, scalable inductors with Q-factor > 20, 800 MHz FT lateral PNPs, 0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor, 1 to 6 fF/μm2 oxide capacitors and various other devices including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The QUBiC4+ process is silicon-based and ideal for applications up to 5 GHz (fT = 35 GHz, NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers up to 33 dBm. QUBiC4X The QUBiC4X BiCMOS process is a SiGe:C-based extension of the QUBiC process for high-frequency mixed-signal designs and offers a rich set of devices, including a 110 GHz fT NPN with 2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @ 10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide capacitor, and a 5 fF/μm2 MIM capacitor. 72 NXP Semiconductors RF Manual 16th edition The QUBiC4X is ideal for applications that typically operate at up to 30 GHz (fT = 110 GHz , NF < 1.0 dB @ 10 GHz) and ultralow noise applications such as LNAs and mixers. QUBiC4Xi The QUBiC4Xi BiCMOS process further enhances the QUBiC4X process and offers an additional feature set of devices for highfrequency mixed-signal designs. These include 180 GHz fT NPNs with 1.4 V breakdown voltage and ultra-low noise figure (NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor. QUBiC4Xi represents the newest SiGe:C process, with improved fT (> 200 GHz) and even lower noise figure (NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond 30 GHz, such as LO generators. SiGe:C f / fmax = 180/200 GHz T QUBiC4X SiGe:C fT / fmax = 110/140 GHz +VPNP +TFR QUBiC4+ +DG +HVNPN BiCMOS f /f max = 35/80 GHz Features -4ML QUBiC4X ` SiGe:C process ` fT/fMAX= 110/140 GHz ` Optimized for applications up to 30 GHz Focusapplications, products&technologies QUBiC4Xi QUBiC4+ ` Baseline, 0.25 µm CMOS, single poly, 5 metal ` Digital gate density 26k gates/mm2 ` fT/fMAX= 35/80 GHz ` +TFR – Thin Film Resistor ` +DG – Dual Gate Oxide MOS ` +HVNPN – High Voltage NPN ` +VPNP – Vertical PNP (high Vearly) ` -4ML – high-density 5fF/µm2 MIM capacitor ` Wide range of active and high-quality passive devices ` Optimized for up to 5 GHz applications QUBiC4Xi ` SiGe:C process ` Improves fT/fmax up to 180/200 GHz ` Optimized for ultra-low noise microwave above 30 GHz QUBiC4+ QUBiC4X QUBiC4Xi 2004 2006 2008 CMOS 0.25 um, bipolar 0.4 um, double poly, deep trench, Si CMOS 0.25 um, bipolar LV 0.4 um, double poly, deep trench, SiGe:C CMOS 0.25 um, bipolar LV 0.3 um, double poly, deep trench, SiGe:C LV NPN f T/Fmax (GHz) 35/80 (Si) 110/140 (SiGe:C) 180/200 (SiGe:C) HV NPN f T/Fmax (GHz) 28/70 (Si) 60/120 (SiGe:C) 90/200 (SiGe:C) NPN BVce0: HV/LV ** 5.9 / 3.8 V 3.2 / 2.0 V 2.5 / 1.4 V 5 / >9 Planned Planned CMOS voltage / dual gate 2.5 / 3.3 V 2.5 V 2.5 V Noise figure NPN (dB) 2 GHz: 1.1 10 GHz: 1.0 10 GHz: 0.6 NMOS 58, PMOS 19 NMOS 58, PMOS 19 NMOS 58, PMOS 19 Isolation (60 dB @ 10 GHz) STI and DTI STI and DTI STI and DTI Interconnection (AlCu with CMP W Plugs) 5 LM, 3 µm top metal 5 LM, 3 µm top metal 2 µm M4 5 LM, 3 µm top metal NW, DN, Poly-Poly 5fF/um2 MIM NW, DN, Poly-Poly 5fF/um2 MIM NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/137/220/2K) Active (12, 57), high-precision SiCr (270) Poly (64/220/330/2K), Active (12, 57), high-precision SiCr (tbd) Poly (64/220/330/2K), Active (12, 57), high-precision SiCr (tbd) Varicaps (single-ended & differential) 1x single-ended, Q > 40 3x differential, Q 30-180 1x single-ended, Q > 40 3x differential, Q 30-180 1x single-ended, Q > 40 3x differential, Q 30-180 Inductors (1.5nH @ 2 GHz) - scalable Q > 21, thick metal, deep trench isolation, high R substrate Q > 21, thick metal, deep trench isolation, high R substrate Q > 21, thick metal, deep trench isolation, high R substrate Other devices LPNP, isolated NMOS, VPNP, transformers Isolated-NMOS, transformers Isolated-NMOS, transformers 32 (MIM) / 34 / 33 (HVNPN) / 35 (VPNP) 36 (MIM) 36 (MIM) Release for production CMOS/bipolar V-PNP f T / BVcb0 (GHz / V) RFCMOS f T (GHz) Capacitors Resistors (Ω/sq) Mask count NXP Semiconductors RF Manual 16th edition 73 2.6.4 High-performance,small-sizepackagingenabledbyNXP'sleadlesspackageplatform andWL-CSPtechnology RF small-signal packaging is driven by two major trends which partly overlap ` Lower parasitics for better RF performance ` Smaller form factors for portable applications To cope with these trends, NXP uses several approaches ` For non-space-restricted applications the use of flat-pack packages instead of gull-wing versions reduces the parasitic impedance because of shorter lead length (e.g. SOT343F instead of SOT343). This results in better RF performance in the Ku and Ka bands (13-20GHz). To reduce PCB board space, a smaller version (SOT1206) is also available. SOT343 SOT343F SOT1206 ` For space-restricted applications there are two routes to reduce the form factor and parasitics: - Leadless package platform - Wafer Level Chip Scale Package (WL-CSP) technology The leadless package (UTLP) platform (>25 variants already released) is highly flexible with respect to package size, package height, and I/O pitch. For example, the 6-pin packages range in size from 1.45 x 1 x 0.5 mm with 0.5 mm pitch to 0.8 x 0.8 x 0.35 mm with 0.3 mm pitch. Package height of 0.25 mm is planned. Because of the compact size of the design, wire lengths and parasitic impedance are also restricted. The absence of leads further reduces the inductance. SOT886 Wafer Level Chip Scale Package technology is ideally for RF functions where the I/O pitch has to fit within the chip area. With larger pitches and smaller designs (and thus little effective chip area), it is more cost-effective to do the fan-out using a leadless package instead of increasing the chip size. The absence of wires gives the lowest parasitic inductance available. SOT891 SOT1208 74 NXP Semiconductors RF Manual 16th edition 0.65 x 0.44 x 0.29 mm (incl. 0.09 mm balls) 5 I/Os @ 0.22 mm pitch 3. Products by function NXP RF product catalog: http://www.nxp.com/rf 3.1 New products DEV = in development CQS = customer qualification samples RFS = release for supply Type Application / description Expected status June 2012 Planned release Section RFS Released 3.3.1 NEW: Wideband transistors BFU730LX Gen7 wideband transistor BGU8007 GPS LNA, 19.0 dB gain, AEC-Q100 RFS Released 3.4.1 BGU7003W General-purpose unmatched LNA for FM radio RFS Released 3.4.1 BGU6101 Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage RFS Released 3.4.1 BGU6102 Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage RFS Released 3.4.1 BGU6104 Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage RFS Released 3.4.1 Products by function NEW: SiGe:C LNAs (for e.g. GPS) NEW: LNAs for set-top boxes BGU7044 LNA for STB tuning RFS Released 3.4.1 BGU7045 LNA for STB tuning RFS Released 3.4.1 NEW: General-purpose wideband amplifiers (50 Ω gain blocks) BGA2874 IF gain block 30.5 dB, 2.5 V RFS Released 3.4.1 BGA2817 IF gain block 24 dB, 3 V RFS Released 3.4.1 BGA2818 IF gain block 31 dB, 3 V RFS Released 3.4.1 BGA2851 IF gain block 25 dB, 5 V RFS Released 3.4.1 BGA2867 IF gain block 27 dB, 5 V RFS Released 3.4.1 BGA2869 IF gain block 32.5 dB, 5 V RFS Released 3.4.1 NEW: Medium power amplifier MMICs BGA7014 Medium power amplifier, 12.0 dB ,13.0 dBm P1dB, SOT89 Dev Q4 2012 3.4.1 BGA7017 Medium power amplifier, 13.5 dB, 16.5 dBm P1dB, SOT89 Dev Q4 2012 3.4.1 BGA7020 Medium power amplifier, 13.0 dB, 18.5 dBm P1dB, SOT89 Dev Q4 2012 3.4.1 BGA7130 Medium power amplifier, 18.0 dB, 30 dBm P1dB, SOT908 RFS Released 3.4.1 NEW: VGAs for wireless infrastructures BGA7351 50 MHz to 250 MHz high linearity variable gain amplifier - 28 dB gain range RFS Released 3.4.1 BGA7210 400 MHz to 2750 MHz high linearity variable gain amplifier RFS Released 3.4.1 BGA7204 700 MHz to 3800 MHz high linearity variable gain amplifier RFS Released 3.4.1 NEW: LNAs for wireless infrastructures BGU7051 LNA 900 MHz - from 0.5 to 1.5 GHz RFS Released 3.4.1 BGU7052 LNA 1.9 GHz - from 1.5 to 2.5 GHz RFS Released 3.4.1 BGU7053 LNA 2.5 GHz - from 2.3 to 2.8 GHz RFS Released 3.4.1 BGU7060 LNA with variable gain from 700 to 800 MHz RFS Released 3.4.1 BGU7061 LNA with variable gain from 700 to 950 MHz RFS Released 3.4.1 BGU7062 LNA with variable gain from 1710 to 1785 MHz RFS Released 3.4.1 BGU7063 LNA with variable gain from 1920 to 1980 MHz RFS Released 3.4.1 NXP Semiconductors RF Manual 16th edition 75 Type Application / description Expected status June 2012 Planned release Section DEV Q4 2012 3.4.2 NEW: PLL + VCO (LO generator) for wireless infrastructures BGX7300 Rx LO generator, 400 MHz to 3 GHz NEW: IQ modulators for wireless infrastructures BGX7100 IQ modulator, ouput power 0 dBm RFS Released 3.4.2 BGX7101 IQ modulator, ouput power 4 dBm RFS Released 3.4.2 NEW: Dual mixers for wireless infrastructures BGX7220 Dual mixer, NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz RFS Released 3.4.2 BGX7221 Dual mixer, NF 10 dB, IIP3 23 dBm, P < 1 W, 1.7GHz to 2.7 GHz RFS Released 3.4.2 NEW: RF power transistors for base stations BLF6G15L(S)-40RN Gen6 ceramic driver LDMOS transistor for GSM, WCDMA & LTE applications RFS Released 3.7.1 BLF6H10L(S)-160 Gen6 ceramic high-voltage LDMOS transistor for GSM, WCDMA & LTE applications DEV Q312 3.7.1 BLF7G20LS-260A Gen7 ceramic asymmetrical Doherty LDMOS transistor for GSM & LTE applications DEV Q412 3.7.1 BLF7G24L(S)-160P Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications RFS Released 3.7.1 BLF7G27LS-90PG Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) RFS Released 3.7.1 BLF8G10L(S)-160V Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications RFS Released 3.7.1 BLF8G10LS-200GV Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLF8G10LS-270GV Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLF8G10L(S)-300P Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q312 3.7.1 3.7.1 BLF8G10LS-400PGV Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q412 BLF8G20L(S)-200V Gen8 ceramic LDMOS transistor for GSM & LTE applications RFS Released 3.7.1 BLF8G20LS-270GV Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing) DEV Q412 3.7.1 3.7.1 BLF8G20LS-270PGV Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing) DEV Q412 BLF8G22LS-160BV Gen8 ceramic LDMOS transistor for WCDMA & LTE applications RFS Released 3.7.1 BLF8G22LS-200GV Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q312 3.7.1 BLF8G22LS-270GV Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q312 3.7.1 BLF8G22LS-400PGV Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q312 3.7.1 BLF8G24L(S)-200P Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications DEV Q312 3.7.1 BLF8G27LS-140G Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLF8G27LS-140V Gen8 ceramic LDMOS transistor for WCDMA & LTE applications DEV Q412 3.7.1 BLF8G27LS-200PGV Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLF8G27LS-280PGV Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLM7G22S-60PB(G) Gen7 LDMOS MMIC for WCDMA applications (gull-wing) DEV Q312 3.7.1 BLP7G07S-140P(G) Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLP7G09S-140P(G) Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) DEV Q412 3.7.1 BLP7G22-10 Gen7 OMP LDMOS transistor for WCDMA & GSM applications DEV Q312 3.7.1 3.7.2 NEW: RF power transistors for broadcast / ISM applications BLF174XR(S) XR ceramic push-pull LDMOS transistor for ISM applications DEV Q312 BLF178XR(S) XR ceramic push-pull LDMOS transistor for FM broadcast & ISM applications RFS Released 3.7.2 BLF2425M6L(S)180P Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications DEV Q312 3.7.2 BLF2425M7L(S)140 Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications RFS Released 3.7.2 BLF2425M7L(S)200 Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications DEV Q412 3.7.2 BLF2425M7L(S)250P Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications RFS Released 3.7.2 BLF25M612(G) Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications (gull-wing) DEV Q312 3.7.2 BLF572XR(S) XR ceramic push-pull LDMOS transistor for ISM applications DEV Q412 3.7.2 BLF574XR(S) XR ceramic push-pull LDMOS transistor for ISM applications DEV Q312 3.7.2 BLF578XR(S) XR ceramic push-pull LDMOS transistor for UHF broadcast & ISM applications RFS Released 3.7.2 BLF647P(S) Ceramic push-pull LDMOS transistor for broadband applications DEV Q312 3.7.2 76 NXP Semiconductors RF Manual 16th edition Type Application / description Expected status June 2012 Planned release Section NEW: RF power transistors for aerospace and defense BLL6G1214LS-250 Gen6 ceramic LDMOS transistor for L-band applications RFS Released 3.7.3 BLL6H1214LS-500 Gen6 high-voltage ceramic LDMOS transistor for L-band applications DEV Q412 3.7.3 BLS6G2735L(S)-30 Gen6 ceramic LDMOS driver transistor for S-band radar applications RFS Released 3.7.3 BLS7G2729L(S)-350P Gen7 ceramic push-pull LDMOS transistor for S-band radar applications RFS Released 3.7.3 BLS7G3135L(S)-350P Gen7 ceramic push-pull LDMOS transistor for S-band radar applications DEV Q412 3.7.3 BLU6H0410L(S)-600P Gen6 high-voltage ceramic push-pull LDMOS transistor for UHF band radar applications RFS Released 3.7.3 NEW: Gallium Nitride (GaN) RF power amplifiers CLF1G0060-10 Gen1 GaN broadband amplifier DEV Q113 3.7.4 CLF1G0060-30 Gen1 GaN broadband amplifier DEV Q113 3.7.4 CLF1G0035-50 Gen1 GaN broadband amplifier DEV Q312 3.7.4 CLF1G0035-100 Gen1 GaN broadband amplifier DEV Q412 3.7.4 JN5142-J01 JenNet-IP RFS Released 3.8 JN5142-001 RF4CE / IEEE802.15.4 RFS Released 3.8 JN5148-J01 JenNet-IP RFS Released 3.8 JN5148-001 JenNet / IEEE802.15.4 RFS Released 3.8 JN5148-Z01 ZigBee RFS Released 3.8 JN5148-001-M00 JenNet / IEEE802.15.4 RFS Released 3.8 JN5148-001-M03 JenNet / IEEE802.15.4 RFS Released 3.8 JN5148-001-M04 JenNet / IEEE802.15.4 RFS Released 3.8 JenNet Networking stack RFS Released 3.8 JenNet-IP Networking stack RFS Released 3.8 ZigBee PRO Networking stack RFS Released 3.8 NXP Semiconductors RF Manual 16th edition Products by function NEW: Low-power wireless microcontrollers and networking stacks 77 3.2 3.2.1 RF diodes Varicap diodes Varicap selection guide on www.nxp.com/varicaps Easy-to-use parametric filters help you choose the right varicap for your design. Why choose NXP’s varicap diodes: ` Reference designs for TV and radio tuning ` Direct matching process ` Small tolerances ` Short lead time ` Complete portfolio covering broad range of frequencies and packages (including leadless) ` Reliable volume supply VCO and FM radio tuning varicap diodes @ f = 1 MHz Type BB145B BB156 BB198 BB199 BB201 BB202^^ BB207^ BB208-02^ BB208-03^ Package Number of diodes SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOT23 SOD523 SOD323 1 1 1 1 2 1 2 1 1 Configuration SG SG SG SG CC SG CC SG SG Cd min Cd typ Cd max @ VR = Cd min Cd typ Cd max @ VR = (pF) (pF) (pF) 6.4 14.4 25 36.5 89 28.2 76 19.9 19.9 16 95 81 - 7.2 17.6 28.5 42.5 102 33.5 86 23.2 23.2 (V) (pF) (pF) (pF) 1 1 1 0.5 1 0.2 1 1 1 2.55 4.2 4.8 11.8 25.5 7.2 25.5 4.5 4.5 4.8 27.6 27.6 - 2.95 5.4 6.8 13.8 29.7 11.2 29.7 5.4 5.4 ^ Includes special design for FM car radio (CREST-IC:TEF6860) ^^ Includes special design for mobile phone tuner ICs rs typ rs max @f= (V) (Ω) (Ω) (MHz) 4 7.5 2 7.5 2.3 7.5 7.5 7.5 0.4 0.25 0.25 0.35 0.2 0.35 0.35 0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5 470 470 100 100 100 100 100 100 100 Cd1/ Cd2 max @ V1 = @ V2 = (V) Cd1/ Cd2 min (V) 4 7.5 4 2 7.5 2.3 7.5 7.5 7.5 2.2 2.7 2.8 3.1 2.5 2.6 3.7 3.7 3.9 3.8 3.3 5.2 5.2 1 1 0.5 1 0.2 1 1 1 Type of connection: CC: SG: common cathode single TV / VCR / DVD / HDD varicap diodes - UHF tuning @ f = 1 MHz Type Package Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882D SOD882D SOD523 SOD523 SOD323 Cd min Cd typ Cd max @ VR = (pF) (pF) (pF) (V) 1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.89 2.1 2.1 2.1 2.1 2.1 2 2.04 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18 1.7 - 2.1 Bold = highly recommended product 78 NXP Semiconductors RF Manual 16th edition rs typ rs max @f= @ Cd = (V) (Ω) (Ω) (MHz) (pF) 1 1 1 1 1 1 1 2 28 28 28 28 28 28 10 25 0.6 0.6 0.6 0.65 0.65 0.65 0.65 0.75 0.75 0.75 0.75 0.7 470 470 470 470 470 470 470 470 9 9 9 9 9 30 9 9 0.5 28 - 0.75 470 9 @ V1 = @ V2 = (V) 10 10.9 10.9 10 10.9 12 Cd1/Cd2 min Cd1/Cd2 typ Cd1/Cd2 max 28 28 28 28 28 28 10 25 8.2 8.45 8.45 8.45 8.45 6 6.3 9 9 9 9 9 9 7 7.3 28 8.9 - @ V1 = @ V2 = (V) (V) 2 2 2 2 2 2 2 1.8 0.5 1 1 1 1 1 1 2 28 28 28 28 28 28 10 25 10 10 10 10 10 5 5 10 - - - - ∆Cd/ Cd @ Ns = TV / VCR / DVD / HDD varicap diodes - VHF tuning @ f = 1 MHz Type Package Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB187 BB187LX Unmatched BB131 BB181 BBY40 SOD323 SOD523 SOT23 Cd typ Cd max @ VR = (pF) (pF) (pF) 2.4 2.48 2.361 2.361 2.36 2.48 2.57 2.57 2.6 2.7 2.6 2.6 2.6 2.7 2.75 2.75 0.7 0.7 4.3 - rs typ rs max @f= @ Cd = (V) (Ω) (Ω) (MHz) (pF) 1 1 1 1 1 1 2 2 28 28 28 28 28 28 25 25 1 0.65 0.65 0.7 1 - 0.9 1.2 0.8 0.8 1.2 0.75 0.75 100 100 100 100 470 100 470 470 12 30 30 30 30 30 - 0.5 0.5 3 28 28 25 - 3 3 0.7 470 470 200 9 9 25 Cd1/ Cd2 typ Cd1/ Cd2 max @ V1 = @ V2 = (V) Cd1/ Cd2 min (V) 2.75 2.89 2.754 2.754 2.75 2.89 2.92 2.92 28 28 28 28 28 28 25 25 14.5 20.6 13.5 13.5 13.5 20.6 11 11 15 22 15 15 15 22 - - 1.055 1.055 6 28 28 25 12 12 5 - 16 16 6.5 @ V1 = @ V2 = (V) (V) 2 2 2 2 2 2 2 2 0.5 1 1 1 1 1 2 2 28 28 28 28 28 28 25 25 10 10 10 10 5 10 10 10 - - - - ∆Cd/ Cd @ Ns = PIN diodes Cd (fF) PIN diode selection guide on www.nxp.com/pindiodes Easy-to-use parametric filters help you choose the right PIN diode for your design. brb407 700 600 BAP65LX Freq = 100 MHz, Cd @ VR = 0 V rD @ 0.5 mA rD @ 10 mA BAP65LX 500 400 BAP50LX BAP63LX BAP63LX BAP1321LX BAP51LX BAP51LX BAP1321LX BAP142LX BAP142LX 300 200 BAP64LX BAP70-02 100 0 10−1 Why choose NXP’s PIN diodes: ` Broad portfolio ` Unrivalled performance ` Short lead time ` Low series inductance ` Low insertion loss ` Low capacitance 1 10 25 20 BAP70-20 BAP50LX BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX 15 10 BAP65LX 5 BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W SOD882D SOD523 SOD323 SOT23 SOT323 SOD882D SOD523 SOD323 SOT323 Config VR max (V) IF max (mA) 1 1 1 2 2 1 1 1 2 SG SG SG CC CC SG SG SG CC 30 30 30 30 30 50 50 50 50 100 100 100 100 100 100 100 100 100 BAP50LX BAP70-02 BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX BAP65LX 10−1 1 10 Insertion Loss (dB) For more information: www.nxp.com/pindiodes @ f = 100 MHz Number of diodes 102 rD (Ω) Freq = 1800 MHz, Isolation @ VR = 0 V Insertion Loss @ 0.5 mA Insertion Loss @ 10 mA Isolation (dB) PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes Package BAP64LX BAP70-02 brb408 0 10−2 Type BAP50LX Products by function 3.2.2 SOD323 SOD323 SOD323 SOD523 SOD882D SOD523 SOD523 SOD882D Cd min @ IF = 0.5 mA @ IF = 1 mA @ f = 1 MHz @ IF = 10 mA @ VR =0V @ VR = 1 V @ VR = 20 V rD typ (Ω) rD max (Ω) rD typ (Ω) rD max (Ω) rD typ (Ω) rD max (Ω) Cd typ (pF) Cd typ (pF) Cd max (pF) Cd typ (pF) Cd max (pF) 2.3 2.5 2.5 2.5 3.3 3.5 3.5 3.5 0.94 1 1 1 1 1.87 1.95 1.95 1.95 3 3 3 3 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8 0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 0.85 0.9 0.9 0.9 0.9 - 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3 0.3 0.32 0.32 0.35 PIN diode: selection on isolation and insertion loss in SOD882D ISL (isolation ) f= f= f= 900 MHz 1800 MHz 2450 MHz Type VR = VR = VR = 0V 0V 0V BAP65LX 10 5.5 3.9 BAP63LX 15.9 10.5 8.3 BAP55LX 19 14 12 BAP1321LX 17 12 10 BAP142LX 18 13 11 BAP51LX 19 15 13 BAP64LX 22 16 14 BAP50LX 20.3 17.9 16.5 IF = 0.5 mA 0.09 0.20 0.24 0.25 0.24 0.36 1.22 1.82 f= 900 MHz IF = IF = 1 mA 10 mA 0.06 0.06 0.17 0.12 0.17 0.08 0.19 0.11 0.18 0.10 0.25 0.12 0.22 0.12 1.07 0.25 IL (Insertion loss) f= f= 1800 MHz 2450 MHz IF = IF = IF = IF = IF = IF = IF = IF = IF = 100 mA 0.5 mA 1 mA 10 mA 100 mA 0.5 mA 1 mA 10 mA 100 mA 0.05 0.09 0.07 0.07 0.06 0.10 0.08 0.08 0.07 0.11 0.20 0.17 0.13 0.11 0.21 0.19 0.15 0.15 0.05 0.25 0.18 0.09 0.07 0.26 0.19 0.10 0.08 0.09 0.26 0.20 0.13 0.11 0.27 0.21 0.14 0.12 0.07 0.24 0.19 0.11 0.09 0.25 0.25 0.12 0.10 0.90 0.36 0.26 0.14 0.10 0.38 0.27 0.15 0.12 0.09 1.21 0.23 0.13 0.10 1.22 0.24 0.15 0.11 1.80 1.06 0.26 1.81 1.08 0.27 - Bold = highly recommended product NXP Semiconductors RF Manual 16th edition 79 PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes @ f = 100 MHz Type BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX Package Number of diodes Config VR max (V) IF max (mA) SOD882D SOD523 SOD323 SOT23 SOD882D SOD882D 1 1 1 2 1 1 SG SG SG SR SG SG 50 60 60 60 60 50 100 100 100 100 100 100 @ IF = 0.5 mA rD typ (Ω) 3.3 3.4 3.4 3.4 3.3 3.3 rD max (Ω) 4.5 5 5 5 5 5 @ IF = 1 mA rD typ (Ω) 2.2 2.4 2.4 2.4 2.4 2.4 rD max (Ω) 3.3 3.6 3.6 3.6 3.6 3.6 @ IF = 10 mA rD typ (Ω) 0.8 1.2 1.2 1.2 1.2 1 rD max (Ω) 1.2 1.8 1.8 1.8 1.8 1.8 @ f = 1 MHz @ VR @ VR = 20 V @ VR = 1 V =0V Cd Cd Cd Cd Cd typ typ max typ max (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26 PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes @ f = 100 MHz Type BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W Package Number of diodes Config VR max (V) IF max (mA) SOD882D SOD523 SOD323 SOT323 SOT323 SOT323 1 1 1 2 2 2 SG SG SG SR CC CA 60 60 50 50 50 50 100 50 50 50 50 50 @ IF = 0.5 mA rD typ (Ω) 4.9 5.5 5.5 5.5 5.5 5.5 rD max (Ω) 9 9 9 9 9 - @ IF = 1 mA rD typ (Ω) 3.2 3.6 3.6 3.6 3.6 3.6 rD max (Ω) 6.5 6.5 6.5 6.5 6.5 - @ f = 1 MHz @ IF = 10 mA rD typ (Ω) 1.4 1.5 1.5 1.5 1.5 2 rD max (Ω) 2.5 2.5 2.5 2.5 2.5 - @ VR =0V Cd typ (pF) 0.3 0.4 0.4 0.4 0.4 0.4 @ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3 Cd max (pF) 0.4 0.55 0.55 0.55 0.55 - @ VR = 20 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2 Cd max (pF) 0.3 0.35 0.35 0.35 0.35 - PIN diodes : typical rD @ 1 mA = 10, attenuator/switching diodes @ f = 100 MHz Type Package Number of diodes BAP64Q SOT753 BAP64-02 SOD523 BAP64-03 SOD323 BAP64-04 SOT23 BAP64-04W SOT323 BAP64-05 SOT23 BAP64-05W SOT323 BAP64-06 SOT23 BAP64-06W SOT323 BAP64LX^ SOD882D ^ = attenuator / switching diode 4 1 1 2 2 2 2 2 2 1 Config SR SG SG SR SR CC CC CA CA SG *= @ VR = 20 V VR max (V) IF max (mA) 100 175 175 175 100 175 100 175 100 60 100 100 100 100 100 100 100 100 100 100 @ IF = 0.5 mA rD typ (Ω) 20 20 20 20 20 20 20 20 20 31 rD max (Ω) 40 40 40 40 40 40 40 40 40 50 @ IF = 1 mA rD typ (Ω) 10 10 10 10 10 10 10 10 10 16 rD max (Ω) 20 20 20 20 20 20 20 20 20 26 @ f = 1 MHz @ VR = 0V Cd rD max typ (Ω) (pF) 3,8 0.52 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 4.4 0.48 @ IF = 10 mA rD typ (Ω) 2 2 2 2 2 2 2 2 2 2.6 @ VR = 1 V @ VR = 20 V Cd typ (pF) 0.37 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 0.34 Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.17* Cd max (pF) - Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.3* PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes @ f = 100 MHz Type BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX Package Number of diodes Config VR max (V) IF max (mA) SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOD882D 1 1 2 2 2 2 1 SG SG SR SR CC CC SG 50 50 50 50 50 50 50 50 50 50 50 50 50 50 @ IF = 0.5 mA rD typ (Ω) 25 25 25 25 25 25 26 rD max (Ω) 40 40 40 40 40 40 40 @ IF = 1 mA rD typ (Ω) 14 14 14 14 14 14 14 rD max (Ω) 25 25 25 25 25 25 25 @ f = 1 MHz @ VR = 0V Cd rD max typ (Ω) (pF) 5 0.4 5 0.4 5 0.45 5 0.45 5 0.45 5 0.45 5 0.4 @ IF = 10 mA rD typ (Ω) 3 3 3 3 3 3 3 @ VR = 1 V @ VR = 5 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 PIN diodes : typical rD @ 1 mA = 40, attenuator diodes @ f = 100 MHz Type Package Number of diodes BAP70Q SOT753 4 BAP70-02 SOD523 1 BAP70-03 SOD323 1 BAP70-04W SOT323 2 BAP70-05 SOT23 2 BAP70AM SOT363 4 Bold = highly recommended product 80 Config VR max (V) SR SG SG SR CC SR 50 50 50 50 50 50 NXP Semiconductors RF Manual 16th edition IF max (mA) 100 100 100 100 100 100 SG = single SR = series @ IF = 0.5 mA rD typ (Ω) 77 77 77 77 77 77 @ IF = 1 mA rD rD rD max typ max (Ω) (Ω) (Ω) 100 40 50 100 40 50 100 40 50 100 40 50 100 40 50 100 40 50 CC = common cathode CA = common anode @ f = 1 MHz @ IF = 10 mA rD typ (Ω) 5.4 5.4 5.4 5.4 5.4 5.4 rD max (Ω) 7 7 7 7 7 7 @ VR =0V Cd typ (pF) 0.6 0.57 0.57 0.6 0.6 0.57 @ VR = 1 V @ VR = 20 V Cd typ (pF) 0.43 0.4 0.4 0.43 0.43 0.4 Cd max (pF) 0.25 0.2 0.2 0.25 0.25 0.2 Cd max (pF) - Cd typ (pF) 0.3 0.25 0.25 0.3 0.3 0.25 3.2.3 Band-switch diodes Why choose NXP’s band-switch diodes: ` Reliable volume supplier ` Short lead time ` Low series inductance ` Low insertion loss ` Low capacitance ` High reverse isolation Type Package VR max (V) IF max (mA) rD max (Ω) @ IF = (mA) @f= (MHz) Cd max (pF) @ VR = (V) @f= (MHz) BA277 BA591 BA891 BAT18 SOD523 SOD323 SOD523 SOT23 35 35 35 35 100 100 100 100 0.7 0.7 0.7 0.7 2 3 3 5 100 100 100 200 1.2 0.9 0.9 1 6 3 3 20 1 1 1 1 Schottky diodes Products by function 3.2.4 Schottky diode selection guide on www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help you choose the right Schottky diode for your design. Why choose NXP’s Schottky diodes: ` Low diode capacitance ` Low forward voltage ` Single- and triple-isolated diode ` Small package Applications ` Digital applications: - Ultra high-speed switching - Clamping circuits ` RF applications: - Diode ring mixer - RF detector - RF voltage doubler Low-capacitance Schottky diodes VR max. IF max. (V) (mA) BAT17 SOT23 Single 4 30 PMBD353 SOT23 Dual-series 4 30 PMBD354^ SOT23 Dual-series 4 30 1PS76SB17 SOD323 Single 4 30 1PS66SB17 SOT666 Triple-isolated 4 30 1PS79SB17 SOD523 Single 4 30 1PS88SB82 SOT363 Triple-isolated 15 30 1PS70SB82 SOT323 Single 15 30 1PS70SB84 SOT323 Dual-series 15 30 1PS70SB85 SOT323 Dual c.c 15 30 1PS70SB86 SOT323 Dual c.a. 15 30 1PS66SB82 SOT666 Triple-isolated 15 30 1PS10SB82 SOD882 Single 15 30 Bold = highly recommended product ^ Diodes have matched capacitance Type Package Configuration VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V NXP Semiconductors RF Manual 16th edition 81 3.3 RF Bipolar transistors 3.3.1 Wideband transistors RF wideband transistor selection guide on www.nxp.com/rftransistors Easy-to-use parametric filters help you choose the right RF wideband transistor for your design. Why choose NXP’s wideband transistors: st th ` Broad portfolio (1 - 7 generation) ` Short lead time ` Smallest packages ` Volume delivery Wideband transistors The fT-IC curve represents transition frequency (fT) characteristics as a function of collector current (IC) for the seven generations of RF wideband transistors. A group of transistors having the same IC and similar fT represents a curve. The curve number matches with products in the selection tables of this section (third column of each table), detailing their RF characteristics. Wideband transistors line-up per frequency bra510 100 (33) (37) fT (GHz) 7th generation (39) (35) (27) (26) (29) (25) (36) 10 (31) (20) (30) (38) (40) 4th generation (23) (22) (21) (19) (34) (15) (14) (16) (18) 3rd generation (11) (7) (9) (8) (12) (10) 2nd generation (4) (1) 1 0.1 0.5 0.2 1 (3) 2 5 1st generation 10 20 Pin 4 1 3 3 2 2 Figure 1 82 6th generation 5th generation (32) (41) 1 2 3 4 4 1 2 3 4 1 Figure 2 NXP Semiconductors RF Manual 16th edition 1 2 3 4 50 100 200 500 IC (mA) Description Type (Figure 1) Collector Base Emitter Emitter Type/X (Figure 1) Collector Emitter Base Emitter Type/XR (Figure 2) Collector Emitter Base Emitter 1000 Wideband transistors Function High-linearity, high-output amplifiers and drivers 6 GHz – 12 GHz – <6 GHz 12 GHz 18 GHz LNAs, mixers, frequency multipliers, buffers Frequency range Band Type BFU610F BFU630F BFU660F BFU690F BFU725F/N1 BFU710F BFU730F BFU760F BFU790F <6 GHz 6 GHz – 12 GHz 12 GHz – +18 GHz L,S,C X, Ku low Ku high, Ka • • • • • • • • • • • • • • • L,S,C X, Ku low • • • • • • • Oscillators <6 GHz 6 GHz – 12 GHz 12 GHz – +18 GHz L,S,C X, Ku low Ku high, Ka Ku high • • • • • • • • • • • • • • • • • • • • • Red = application note available on NXP.com NPN NPN NPN NPN NPN NPN NPN 7 7 7 - 1900 1900 1900 - 1 1 1 - 3.6 3.6 3.6 - @ IC = (mA) @ VCE = (V) 1 1 - - 1000 0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4 1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500 0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10 1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5 3 2.1 3 3 3 2000 1000 2000 1000 1000 5 5 5 -5 -10 10 10 10 -10 -5 800 800 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 2000 100 50 80 80 70 15 15 30 30 45 70 15 30 30 30 30 30 1000 1000 1000 1000 500 1000 1000 1000 1000 1000 1000 15 15 5 5 45 5 5 5 5 5 5 8 8 8 8 10 8 8 8 8 8 8 2.5 2.5 2.3 2.3 3 2.7 3 3 3 2.1 2.1 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 5 5 5 5 45 15 5 5 5 5 5 8 8 8 8 10 8 8 8 8 8 8 SOT23 SOT323 SOT23 1 1.6 2.3 15 15 5 25 300 NPN 50 300 NPN 6.5 30 NPN BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9 SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4 5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12 6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50 32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300 NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30 18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10 1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000 BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR94A^ BFR93AR BFR93AW BFR94AW^ 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 16 15 22 22 22 14 14 8 8 8 22 14 8 8 8 8 8 SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT23 SOT323 SOT323 15 10 15 15 15 10 10 12 12 12 15 10 12 12 12 12 12 150 100 200 200 200 50 50 35 35 60 200 50 35 35 35 35 35 1000 1000 400 400 2000 380 380 300 300 700 2250 300 300 300 300 300 300 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 10 8 4 4 12 8 8 8 8 12 8 8 8 8 8 8 Bold = highly recommended product 7 8 5 5 7 8 8 6 6 6 7 8 6 6 6 5 5 Polarity 3 3 1 Type 1 1 1 16 18 13 13 13 17 17 16 16 11 13 13 13 13 13 13 500 500 900 900 900 1000 1000 1000 1000 900 1000 1000 1000 1000 1000 1000 100 50 80 80 70 15 15 30 30 70 15 30 30 30 30 30 12 15 7.5 7.5 7.5 10 10 10 10 13.5 5.5 8 7 7 7 8 8 10 8 4 4 12 8 8 8 8 10 12 8 8 8 8 8 8 1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.9 1.5 1.5 NF (typ) (dB) - BFS17 BFS17W BFT25 NF (typ) (dB) - IC (max) (mA) 5 5 1 VCEO (max) (V) 2 2 1 f T (typ) (GHz) 500 500 500 Package 4.5 4.5 3.8 Curve @ VCE = (V) @ f = (MHz) 800 @ IC = (mA) GUM (typ) (dB) 12 @ f = (MHz) @ VCE = (V) 1 @ VCE = (V) @ IC = (mA) 1 @ IC = (mA) @ f = (MHz) 500 @ f = (MHz) GUM (typ) (dB) 18 Generation P tot (max) (mW) RF wideband transistors generations 1 to 3 ^ AEC-Q101 qualified (some limitations apply) NXP Semiconductors RF Manual 16th edition 83 Products by function GUM (typ) (dB) 400 400 400 2000 2100 2000 2000 @ VCE = (V) Polarity 250 250 250 500 250 250 500 @ IC = (mA) P tot (max) (mW) 8 8 10 10 8 10 9.5 SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223 @f= (MHz) IC (max) (mA) BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81 VCEO (max) (V) Type Package RF power transistors for portable equipment (VHF) 1800 1800 1800 1800 5 5 15 15 3 3 3 3 - - - - 1 1 1.1 1.1 5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 - 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 - 8.5 8.5 19.4 19.4 5 5 15 15 3 3 3 3 @ f = (MHz) 10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 - @ VCE = (V) @ VCE = (V) NPN 18 NPN 18 NPN 18.3 NPN 18.3 5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 - @ VCE = (V) 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.85 1.85 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.9 1.9 2.7 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2 2 2.1 2.1 1.8 @ IC = (mA) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6 @ IC = (mA) 5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 IP3 (typ) (dBm) 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 @ IC = (mA) 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3 PL(1dB) (typ) (dBmW) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 2000 1.25 2000 1.25 2000 1.25 2000 1.25 2000 1.25 2000 5 2000 5 2000 5 2000 5 2000 5 2000 10 2000 10 2000 10 2000 10 2000 10 2000 10 2000 10 2000 5 2000 5 2000 15 2000 5 2000 1.25 2000 5 2000 5 2000 10 2000 1.25 2000 5 2000 10 2000 5 2000 5 2000 5 2000 5 2000 5 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 - 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 - 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 - 2000 2000 2000 2000 3 3 3 3 1.8 1.8 8.7 8.7 3 3 3 3 1800 5 1800 5 1800 15 1800 15 @ VCE = (V) 60 60 210 210 5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30 @ IC = (mA) 10 10 35 35 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 @ f = (MHz) 6 6 6 6 14 14 14 14 13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2 NF (typ) (dB) SOT143R SOT343R SOT143R SOT343R @ VCE = (V) 30 30 31 31 @ IC = (mA) 4.5 4.5 4.5 4.5 @ f = (MHz) BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NF (typ) (dB) 150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270 @ VCE = (V) 18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100 @ IC = (mA) P tot (max) (mW) 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10 @ f = (MHz) IC (max) (mA) SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5 GUM (typ) (dB) VCEO (max) (V) 19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21 Polarity Curve 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 f T (typ) (GHz) Generation BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957 Package Type RF wideband transistors generations 4 and 4.5 1 1 3 3 SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT883C SOT343F SOT343F 40 40 40 40 70 70 70 53 70 70 5 10 5 30 5 70 5 100 2.8 10 2.8 40 2.8 30 3.0 30 2.8 70 2.8 100 50 130 200 300 30 136 130 160 200 250 NPN 21 NPN 28 NPN 28.5 NPN 25.6 NPN 16.5 NPN 18 NPN 18.5 NPN 13.3 NPN 25 NPN 20.4 Bold = highly recommended product 84 NXP Semiconductors RF Manual 16th edition PL(1dB) (typ) (dBmW) 34 35 36 37 38 33 39 40 41 900 900 900 900 900 900 1 1 2 2 2 8 2 2 2 2 2 2 1.6 1.2 1.2 1.2 1.2 1.8 2000 2000 2000 2000 2000 2000 1 1 2 2 2 8 2 2 2 2 2 2 5 1 5 2 12 2 12 2 12 2 20 3.6 900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80 5800 2400 1500 1500 12000 5800 5800 5800 2400 2400 8 25 60 90 8 25 25 25 60 90 2 2 2 2 2 2 2 2 2 2 0.75 0.58 0.6 0.7 0.9 0.47 0.56 0.55 0.5 0.56 2400 1500 1500 1500 5800 2400 2400 2400 1500 1500 1 5 20 50 2 5 5 5 20 50 2 2 2 2 2 2 2 2 2 2 1.4 5800 1 0.73 2400 5 0.75 2400 20 0.9 2400 50 1.5 12000 2 0.7 5800 5 0.8 5800 5 0.8 5800 5 0.6 2400 20 0.7 2400 50 2 2 2 2 2 2 2 2 2 2 8 - - 14 8 5 - 23 25 5 - 30 60 5 - 35 90 5 - 14.5 8 2 5800 25 19 25 2 - 20.5 25 2 - 26 12.4 2.3 - 23 60 2 - 24 90 2 2 - IP3 (typ) (dBm) 1 0.9 0.8 0.8 0.8 1.2 @ IC = (mA) 3.6 2 2 2 2 2 2 @ f = (MHz) 1 3 10 25 25 25 80 @ VCE = (V) 1900 2000 2000 2000 2000 2000 2000 NF (typ) (dB) 10 22 21 23 22 20 16 NF (typ) (dB) @ VCE = (V) 6 6 6 6 7 7 7 7 7 7 @ IC = (mA) BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU730LX BFU760F BFU790F @ f = (MHz) NPN NPN NPN NPN NPN NPN NPN @ VCE = (V) Polarity 600 16 54 135 135 135 360 @ IC = (mA) P tot (max) (mW) 4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250 @ f = (MHz) IC (max) (mA) 17 22 25 25 25 21 @ VCE = (V) VCEO (max) (V) SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R @ IC = (mA) f T (typ) (GHz) 32 25 26 27 27 27 29 @ f = (MHz) Curve 5 5 5 5 5 5 5 GUM (typ) (dB) Generation BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W Package Type RF wideband transistors generations 5 to 7 1 2 2 2 2 2 3.4 3.4.1 RF ICs RF MMIC amplifiers and mixers RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics Easy-to-use parametric filters help you choose the right zRF MMIC for your design. Why choose NXP's RF MMIC amplifiers and mixers: ` Reduced RF component count ` Easy circuit design-in ` Reduced board size ` Short time-to-market ` Broad portfolio ` Volume delivery ` Short lead time Gp [dB] Type Package BGA2870 BGA2874 SOT363 SOT363 2.5 2.5 BGA2800 BGA2803 BGA2748 BGA2714 BGA2801 BGA2802 BGA2815 BGA2817 BGA2819 BGM1012 BGA2816 BGA2818 BGA2819 BGA2850 BGA2851 BGA2715 BGA2717 BGA2712 BGA2866 BGA2867 BGA2709 BGA2716 BGA2776 BGA2865 BGA2868 BGA2869 BGM1013 BGM1014 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 3 3 3 3 3 3 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Pl(1dB) [dBm] NF [dB] IP3o[dBm] [Ohm] External Inductor 13.0 17.0 2150 MHz 50 50 N N 8.0 2.0 -1.4 0.0 9.0 6.0 10.0 15.0 11.0 13.0 8.0 14.0 14.0 8.0 5.0 0.6 6.3 6.0 12.0 14.1 14.0 15.9 14.4 10.0 21.5 19.0 18.6 15.1 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 75 75 N N N N N N N N N Y N N N N N N N N N N Y Y Y N N N Y Y 250 MHz 500 MHz 750 MHz 250 MHz 500 MHz 750 MHz 250 MHz 500 MHz 750 MHz 250 MHz 750 MHz 15.6 16.0 31.2 31.1 250 MHz 31.1 31.0 950 MHz 31.0 30.6 2150 MHz 5.0 5.0 250 MHz 4.0 4.0 950 MHz 4.0 4.0 2150 MHz 3.1 3.0 250 MHz 3.2 3.1 950 MHz 3.7 3.4 2150 MHz 15.0 19.0 950 MHz 10.5 5.8 5.7 4.6 14.3 12.5 18.2 20.0 16.0 14.6 22.0 19.9 18.0 9.1 7.0 4.3 8.0 12.3 17.4 21.7 23.5 15.9 24.4 26.4 26.0 22.0 27.5 21.0 19.9 23.6 17.6 20.7 22.2 25.6 25.8 24.5 27.0 19.6 31.9 30.1 30.0 23.2 23.3 15.6 20.0 21.1 23.2 26.4 22.5 22.4 22.9 30.9 31.5 30.9 35.3 30.2 20.5 23.4 21.9 20.4 22.4 25.8 25.3 24.7 27.0 20.0 32.0 29.8 30.0 24.0 24.7 21.5 24.2 21.2 23.9 27.2 22.7 22.8 23.2 32.2 32.8 30.9 35.6 32.2 20.2 23.0 17.8 20.8 23.0 25.5 25.2 25.1 28.0 20.4 26.9 30.0 31.0 22.9 25.2 23.3 25.1 22.0 24.3 27.2 23.0 22.9 23.2 29.6 33.5 32.2 32.1 34.3 -6.0 -6.0 -9.2 -7.9 2.0 1.0 5.0 6.0 2.0 6.0 5.0 6.0 5.0 -2.0 -8.0 -10.9 -9.0 0.0 -3.0 1.0 5.0 1.0 3.4 3.7 3.7 1.7 2.4 3.8 4.2 3.7 3.9 3.6 3.6 1.9 2.2 3.8 4.1 3.8 3.9 3.2 4.8 3.2 3.3 3.1 4.1 3.2 2.6 2.3 3.9 3.8 3.8 4.0 5.3 4.9 3.9 4.0 3.9 4.6 4.2 3.7 3.4 2.4 3.0 3.9 3.6 3.7 3.8 3.3 4.9 3.2 3.3 3.4 4.0 3.0 3.1 2.9 4.3 3.9 3.7 5.1 5.5 5.3 4.0 4.1 4.0 4.9 4.2 11.0 5.0 -1.9 2.1 14.0 13.0 17.0 18.0 12.0 18.0 15.0 18.0 16.0 10.0 8.0 2.3 10.0 11.0 17.0 18.8 22.0 22.2 18.6 19.0 23.5 20.0 22.7 20.5 Vcc (V) Is (mA) -7.8 2.0 3.0 8.0 6.0 7.0 7.0 5.0 -3.0 4.0 6.8 9.0 8.8 -4.0 -8.0 -2.6 0.2 4.0 6.5 8.3 8.9 7.2 8.0 11.0 8.8 13.0 11.2 4.9 3.2 3.5 3.0 4.2 4.0 2.6 2.3 4.2 3.9 3.7 4.3 5.5 4.7 3.8 4.0 3.0 -2.0 -5.0 -8.5 -3.1 -2.0 3.0 4.9 5.7 6.1 6.0 2.0 8.5 7.6 8.1 5.7 3.8 4.6 4.3 Zout Products by function General-purpose wideband amplifiers (50 Ω) General-purpose LNA MMICs |S21|2 [dB] (1) Type Package BGA2001 BGA2002 (1) BGA2003 BGA2011 BGA2012 BGU7003 BGU7003W BGU6101 BGU6102 BGU6104 Vcc (V) Is (mA) SOT343R SOT343R SOT343R SOT363 SOT363 SOT891 SOT886 SOT1209 SOT1209 2.5 2.5 2.5 3 3 2.5 2.5 3 3 4.0 4.0 10.0 15.0 7.0 5.0 5.0 1.5 3.0 SOT1209 3 6.0 450 MHz 900 1800 MHz MHz 18.0 18.0 19.0 19.0 2400 MHz Pl(1dB) [dBm] 5800 450 MHz MHz 900 2400 450 MHz MHz MHz 14.0 14.0 14.0 NFmin [dB] 900 1800 2400 5800 450 MHz MHz MHz MHz MHz 1.3 1.3 1.8 1.5 16.0 13.0 18.5 15.2 15.2 13.0 (2) 14.0 (3) 22.5 18.5 12.8 (4) AEC-Q101 qualified (2) Icc 3 mA (3) Icc 6 mA (4) Icc 12 mA 1.3 1.3 1.8 900 1800 MHz MHz -7.4 -7.4 -6.5 10.0 1.7 20.0 20.0 12.0 16.5 11.4 11.4 -11.0 -5.0 0.5 -11.5 -6.5 (2) 0.8 -5.5 0 (3) 0.7 0.5 6.5 (4) 0.8 0.6 0.6 0.8 0.8 0.8 ESD protection IP3o [dBm] 2400 MHz 5800 MHz kV HBM -4.5 -4.5 -4.8 1 1 10.0 0.8 0.8 1.3 (2) 1.2 (3) 1.1 (4) 1.5 1.5 -2.5 5.5 11.0 -2.0 6.0 12.0 6.5 (2) 11.5 (3) 18.5 (4) 3 3 3 Bold = highly recommended product Bold red = new, highly recommended product NXP Semiconductors RF Manual 16th edition 85 SiGe:C LNAs (for GPS and others) @ 1.575 GHz (dBm) Typ Max Min Typ Max 3 - 4.5 4.5 4.8 4.8 4.1 4.6 15 - 16 - 18.3 16.5* 16.5* 18.5** 18.5** 17.5**** 19.0*** 20 - * 16.5 dB without jammer / 17.5 dB with jammer ** 18.5 dB without jammer / 19.5 dB with jammer *** 19.0 dB without jammer / 20.5 dB with jammer **** 17.5 dB without jammer / 19 dB with jammer 0.8 0.9 0.9 0.9 0.9 0.6 # 0.75 # -15 -12 -14 -14 -15 -15 - - -20 -11 - -11 -8 -11 - -11 -8 -12 - -14 -11 -12 - -14 -11 -10 - -8 - -13 -10 - 1 Typ Vcc = 2.2 V, Typ Min 2.85 2.85 2.85 2.85 2.85 3.1 2.2 Vcc = 2.2 V, Min Max 2.2 1.5 1.5 1.5 1.5 1.5 1.5 Vcc = 1.5 V, Min Min Vcc = 1.8 V, Typ SOT891 SOT886 SOT886 SOT886 SOT886 WL-CSP SOT886 Vcc = 1.8 V, Min BGU7003 BGU7004^ BGU7005 BGU7007 BGU7008^ BGU8006 BGU8007 Vcc = 2.85 V, Min (dBm) Vcc = 2.85 V, Typ (dB) Vcc = 2.5 V, Icc = 5 mA IP3i (dB) Vcc = 2.2 V, Typ PL(1dB) (mA) Vcc = 2.2 V, Min NF (V) Vcc = 1.8 V, Typ |s21|2 Vcc = 1.8 V, Min Icc Vcc = 1.5 V, Typ Vcc Package Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz Vcc = 1.5 V, Min Input power at 1 dB gain compression Vcc = 2.85 V, Min Noise figure Vcc = 2.85 V, Typ Insertion power gain Vcc = 2.5 V, Icc = 5 mA Supply current Vcc = 1.5 V, Typ Type Supply voltage 4 5 5 1 1 - 9 9 4 4 5 - 2 5 0 - 5 5 2 2 - 12 12 5 5 8 - ^ AEC-Q101 qualified (some limitations apply) Evaluation board losses excluded # LNAs for set-top boxes (75 Ω) Package Frequency range BGU7031 SOT363 (MHz) 40 - 1000 BGU7032 SOT363 40 - 1000 BGU7033 SOT363 40 - 1000 BGU7041 SOT363 40 - 1000 BGU7042 SOT363 40 - 1000 Type BGU7044 SOT363 40 - 1000 BGU7045 SOT363 40 - 1000 @ Mode VCC ICC GP 10 dB GP 10 dB Bypass GP 10 dB GP 5 dB Bypass GP 10 dB GP 10 dB Bypass GP 14 dB GP 14 dB Bypass (V) 5 5 5 5 5 5 3.3 3.3 3.3 3.3 3.3 3.3 (mA) 43 43 4 43 43 4 38 38 3 34 34 3 Gain (1) NF PL (1dB) OIP3 FL (2) RLout RLin (dB) 10 10 -2 10 5 -2 10 10 -2 14 14 -2 (dB) 4.5 4.5 2.5 4.5 6 2.5 4 4 2.5 2.8 2.8 2.5 (dBm) 14 14 14 9 12 12 13 13 - (dBm) 29 29 29 29 29 29 29 29 29 29 29 27 (dB) -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 (dB) 12 12 8 12 12 8 12 12 10 12 12 10 (dB) 18 18 8 18 17 8 21 21 10 20 20 9 LNAs for wireless infrastructures (50 Ω) Type Package @ VCC [typ] (V) @ ICC [typ] (mA) BGU7051 SOT650-1 3.3 65 BGU7052 SOT650-1 3.3 80 BGU7053 SOT650-1 3.3 90 BGU7060 SOT1301AA 5 BGU7061 SOT1301AA BGU7062 BGU7063 86 frange [min] (MHz) 500 750 900 1500 1850 1950 2300 2700 frange [max] (MHz) 750 850 1500 1750 1900 2500 2500 2800 200 700 800 5 200 800 950 SOT1301AA 5 185 1710 1785 SOT1301AA 5 190 230 1920 1980 NXP Semiconductors RF Manual 16th edition Gass [typ] (dB) 23.5 21.5 21 21.5 20 19.7 18.5 17.5 3 12 18 35 3 12 18 35 3 12 18 35 18 35 NF [typ] (dB) 0.6 0.63 0.65 0.76 0.76 0.79 0.85 0.9 21 15 7.2 1 21 15 7.2 1 20.6 15 9.3 0.98 6.4 1.05 PL(1dB) [typ] (dBm) 17 16.5 16.5 15.5 14.5 14.5 13.5 13 11 7.5 -7 -12.5 11 7.5 -7 -12.5 10.7 5.4 -7 -12.8 -6.4 -12.5 IP3O [typ] (dBm) 32 32 33 37 35.5 35 36 36 25.5 22.5 4.5 2.5 25.5 22.5 4.5 2.5 25.6 21 3.4 1 5.4 0.9 RLin [typ] (dB) 27.5 26 24.5 23 23 22 23 26 20 20 20 24 20 20 20 24 23 23 23 26 35 31 RLout [typ] (dB) 18 17.5 18 22 22 21 19.5 23 19 19 19 19 19 19 19 19 16 16 16 16 15 15 @ VCC @ ICC Package [typ] (V) [typ] (mA) Frequency range [min] (MHz) BGA6289 SOT89 4.1 84 100-3000 BGA6489 SOT89 5.1 78 100-3000 BGA6589 SOT89 4.8 81 100-3000 BGA7014* SOT89 5 70 30-6000 BGA7017* SOT89 5 87 30-6000 BGA7020* SOT89 5 120 30-6000 BGA7024 SOT89 5 110 400 - 2700 BGA7027 SOT89 5 165 400 - 2700 BGA7124 SOT908 5 140 400 - 2700 BGA7127 SOT908 5 180 400 - 2700 BGA7130 SOT908 5 450 400 - 2700 Type RF input frequency [max] (MHz) 900 1800 900 1800 900 1800 2000 4000 2000 4000 2000 4000 940 1960 2140 2445 940 1960 2140 940 1960 2140 2445 940 1960 2140 2445 750 2140 Gain PL(1dB) IP3O NF [typ] (dB) 15.0 13.0 20.0 16.0 22.0 17.0 12.0 13.5 12.0 13.5 13.0 14.0 22.0 16.0 15.0 14.0 19.0 11.5 11.0 23.0 16.5 16.0 14.0 20.0 13.0 12.0 10.5 18.0 10.0 [typ] (dBm) 31.0 28.0 33.0 30.0 33.0 32.0 13.0 10.0 16.5 11.5 18.5 14.0 24.0 25.5 25.5 24.5 29.0 27.5 28.0 25.0 24.5 24.5 23.5 27.5 28.5 28.0 27.5 30.0 30.0 [typ] (dBm) 17.0 15.0 20.0 17.0 21.0 20.0 26.0 20.5 29.0 23.0 33.0 26.0 37.5 38.0 38.0 37.5 41.5 43.0 42.5 38.5 38.0 37.5 36.0 41.5 42.5 42.0 41.5 43.0 44.0 [typ] (dB) 3.5 3.7 3.1 3.3 3 3.3 6.2 6.0 6.4 6.3 6.5 6.2 2.9 3.7 3.7 4.0 2.6 3.8 3.9 5.2 4.6 4.8 5.4 3.1 4.5 4.6 4.7 5.0 5.0 Products by function General-purpose medium power amplifiers VGAs for wireless infrastructures Type Package type BGA7204 SOT617-3 single BGA7210 SOT617-3 single BGA7350 BGA7351 SOT617-1 SOT617-1 dual dual @ VCC @ ICC frange frange [typ] (V) 5 5 5 5 5 5 5 5 5 5 5 [typ] (mA) 115 115 115 115 185 185 185 185 185 245 280 [min] (MHz) 400 700 1450 2100 700 1400 1700 2200 3400 50 50 [max] (MHz) 700 1450 2100 2750 1400 1700 2200 2800 3800 250 250 Gp @ minimum attenuation Attenuation range (dB) (dB) 18.5 18.5 17.5 16.5 30 29.5 29 28 26 18.5 22 31.5 31.5 30.5 30 31.5 31.5 31.5 30.5 29.5 24 28 Gain(1) (dB) 23 @ 1900 MHz DG(2) P1dB (dB) (dBm) 56 13 ACPR (dBc) 49 @ 1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10 Vs (V) 4 NF PL(1dB) IP3O [typ] (dB) 7 6.5 6.5 7 6.5 6.5 6.5 7 8 6 6 [typ] (dBm) 21 21 20.5 20 21 21 21 23 19 17 16.5 [typ] (dBm) 38 37.5 36 34 39 37 35 35 27 43 46 2-stage variable-gain linear amplifier @ (1) Type Package BGA2031/1 SOT363 Gain = GP, power gain (2) Vs (V) 3 Is (mA) 51 Frequency Gain(1) range (dB) 800-2500 24 @ 900 MHz DG(2) P1dB (dB) (dBm) 62 11 ACPR (dBc) 49 Vs (V) 3.3 Limits Is (mA) 77 P tot (mW) 200 DG = gain control range Wideband linear mixer @ (1) Type Package BGA2022 SOT363 Gain = GP, power gain (2) Vs (V) 3 Is (mA) 6 RF input Frequency range 800 - 2500 IF output Frequency range 50 - 500 NF (dB) 9 @ 880 MHz Gain(1) OIP3 (dB) (dBm) 5 4 Limits Is (mA) 10 Ptot (mW) 40 DG = gain control range Bold = highly recommended product Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production NXP Semiconductors RF Manual 16th edition 87 3.4.2 Wireless infrastructure ICs Low-noise PLL + VCO (LO generator) for wireless infrastructures Type Package BGX7300* SOT1092-2 @ VCC @ ICC fi(ref) [typ] [typ] [min] (V) (mA) (MHz) 3.3 150 VCO output RF output frequency frequency (MHz) (MHz) 2200 - 2750 10 - 250 2750 - 3500 3500 - 4400 Normalized phase noise Phase noise @ 1MHz [max] [max] [max] [typ] (dBc/Hz) (dBc/Hz) deg (dBm) -225 -134 (2.2 GHz carrier) -133 (3.0 GHz carrier) -131 (4.2 GHz carrier) 0.24° @ 2.1 GHz -5 to +5 68 - 4400 Integrated RMS Programmable phase error output power IQ modulators for wireless infrastructure Type Package @ VCC @ ICC [typ] [typ] (V) (mA) BGX7100 SOT616-3 5 BGX7101 SOT616-3 5 flo range (MHz) 165 165 173 173 178 178 184 172 172 180 180 178 182 188 400 4000 400 4000 flo (MHz) 750 910 1840 1960 2140 2650 3650 750 910 1840 1960 2140 2650 3650 Po BWmod Nflr(o) * PL(1dB) IP2O IP3O SBS CF [typ] [typ] [typ] [typ] [typ] [typ] [typ] [typ] (dBm) (MHz) (dBm/Hz) (dBm) (dBm) (dBm) (dBc) (dBm) -159/-158.5 -159/-158.5 -158.5/-158 -158.5/-158 -158.5/-158 -158/-158 -158/-158 -159/-158.5 -159/-158.5 -158.5/-158 -158.5/-158 -158.5/-158 -158/-158 -158/-158 11.5 11.5 11.5 11.5 11.5 11.5 11.5 12 12 12 12 12 12 12 71 72 69 72.5 74 62 60 71 75 71 72 75 65 65 29 29 27 27 27 26 25 28 28 27 27 27 26 25 55 49 47 49 51 60 53 63 49 55 57 63 50 57 -55 -55 -50 -48 -45 -45 -43 -51 -57 -50 -47 -45 -45 -42 -0.2 400 4 650 * Without modulation/with modulation Dual mixers for wireless infrastructure Type @ VCC @ ICC RF input frequency RF input frequency Local oscillator frequency Local oscillator frequency Second-order spurious rejection 2RF-2LO NFSSB singlesideband IP3i Gconv [typ] [typ] [min] [max] [min] [max] [max] [typ] [typ] [typ] (V) (mA) (MHz) (MHz) (MHz) (MHz) (dBc) (dB) (dBm) (dB) 5 5 330 365 700 1400 950 2700 500 1500 1150 2500 -60 -60 10 10 26 25.5 8 8.5 Package BGX7220 BGX7221 SOT1092-2 SOT1092-2 Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production 88 NXP Semiconductors RF Manual 16th edition 3.4.3 Satellite LNB RF ICs Type Package TFF1014HN TFF1015HN TFF1017HN TFF1018HN 3.4.4 SOT763-1 SOT763-1 SOT763-1 SOT763-1 Input freq range Vcc I Gconv NF OIP3 LO Freq Integrated Phase noise density (degrees RMS) (V) (mA) (dB) (dB) (dB) (GHz) 10.7 - 12.75 5 52 36 7 13 9.75 / 10.6 1.5 10.7 - 12.75 5 52 39 7 13 9.75 / 10.6 1.5 10.7 - 12.75 5 52 42 7 13 9.75 / 10.6 1.5 10.7 - 12.75 5 52 45 7 13 9.75 / 10.6 1.5 Low-noise LO generators for VSAT and general microwave applications Why choose NXP’s low-noise LO generators: ` Lowest total cost of ownership ` Alignment-free concept ` Easy circuit design-in ` Improved LO stability fIN(REF) Type TFF1003HN TFF1007HN VCC ICC PLL phase noise @ N=64, @ 100 kHz Typ Typ Max Package SOT616 SOT616 PLL Output buffer fo(RF) Products by function Low-noise LO generators for VSAT applications Input Po RLout(RF) Si Typ Max Min (dBm) (MHz) (V) (mA) (dBc/Hz) (GHz) (dBm) (dB) 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10 230.46 - 234.38 3.3 100 -104 14.62 - 15 -3 -10 -10 Low-noise LO generators for general microwave applications Type Package fIN(REF) VCC ICC Typ (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 Typ (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 PLL phase noise @ N=64 @ 100 kHz @ 10 MHz (dBc/Hz) (dBc/Hz) -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 Min (GHz) 6.84 7.16 7.49 7.84 8.21 8.59 8.99 9.00 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.9 13.54 14.17 14.83 PLL fo(RF) Typ (GHz) 7 7.33 7.67 8.02 8.4 8.79 9.2 9.4 9.63 10.07 10.54 11.03 11.55 12.09 12.65 13.2 13.85 14.5 15.18 (MHz) TFF11070HN* SOT616 27 - 448 TFF11073HN* SOT616 28 - 468 TFF11077HN* SOT616 29 - 490 TFF11080HN* SOT616 31 - 513 TFF11084HN* SOT616 32 - 537 TFF11088HN* SOT616 34 - 562 TFF11092HN* SOT616 35 - 588 TFF11094HN* SOT616 36-600 TFF11096HN* SOT616 37 - 616 TFF11101HN* SOT616 38 - 644 TFF11105HN* SOT616 40 - 674 TFF11110HN* SOT616 42 - 706 TFF11115HN* SOT616 44 - 738 TFF11121HN* SOT616 46 - 773 TFF11126HN* SOT616 48 - 809 TFF11132HN* SOT616 51 - 846 TFF11139HN* SOT616 53 - 886 TFF11145HN* SOT616 55 - 927 TFF11152HN* SOT616 58 - 970 Bold = highly recommended product * To be released on request, please consult your local NXP representative or authorized distributor Max (GHz) 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.6 9.85 10.31 10.79 11.29 11.81 12.36 12.94 13.5 14.17 14.83 15.52 Output buffer Po RLout(RF) Typ Max (dBm) (dB) -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 Input Si Min (dBm) -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 Frequency band C C C C. X X X X X X X Ku Ku Ku Ku Ku Ku Ka Ka Ka NXP Semiconductors RF Manual 16th edition 89 3.5 3.5.1 RF MOS transistors JFETs JFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you choose the right junction field effect transistor for your design. Why choose NXP’s JFETs: ` Reliable volume supplier ` Short lead time ` Broad portfolio N-channel junction field-effect transistors for switching Type Package BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBF4391 PMBF4392 PMBF4393 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 VDS IG (V) max 40 40 40 25 25 25 40 40 40 40 40 40 (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 50 150 25 75 5 30 Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 - t off (ns) max 15 15 15 typ 6 6 6 35 35 35 - max 25 50 100 20 35 50 P-channel junction field-effect transistors for switching Type Package PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 SOT23 SOT23 SOT23 SOT23 90 VDS IG (V) max 30 30 30 30 (mA) max 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 NXP Semiconductors RF Manual 16th edition Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 t off (ns) max - typ 15 30 35 45 max - N-channel junction field-effect transistors for general RF applications Package VDS IG (V) max (mA) max I DSS (mA) min max CHARACTERISTICS Vgsoff |Yfs| (V) (mS) min max min max DC, LF, and HF amplifiers BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages SOT23 20 10 0.7 3 typ. 0.8 BF510 (1) SOT23 20 10 2.5 7 typ. 1.5 BF511(1) SOT23 20 10 6 12 typ. 2.2 BF512(1) SOT23 20 10 10 18 typ. 3 BF513 (1) Low-level general-purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 < 2.5 General-purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 < 1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5 (1) C rs (pF) min max 3 3 3 4.5 4.5 4.5 6.5 6.5 6.5 - 0.8 0.8 0.8 0.8 0.8 0.8 - 12 16 20 35 20 25 30 - 2.1 2.1 2.1 typ=1.9 2.7 2.7 2.7 - 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 1.5 1.5 - >1 1.5 - > 10 > 10 > 10 10 1.3 1.3 1.3 1.3 2.5 2.5 2.5 2.5 2.5 4 6 7 1 1.5 4 4.5 Products by function Type Asymmetrical 3.5.2 MOSFETs RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you choose the right RF MOSFET for your design. Why choose NXP's MOSFETs: ` Reference designs for TV tuning ` Short lead time ` Broad portfolio ` Smallest packages ` 2-in-1 FETs for tuner applications ` Reliable volume supply ` Best performance MOSFETs for TV tuning N-channel, single MOSFETs for switching VDS Type Package BSS83 SOT143 Silicon RF Switches BF1107 SOT23 BF1108 SOT143B BF1108R SOT143R BF1108W SOT343 BF1108WR SOT343R BF1118 SOT143B BF1118R SOT143R BF1118W SOT343 BF1118WR SOT343R (V) max 10 ID (mA) max 50 3 3 3 3 3 3 3 3 3 10 10 10 10 10 10 10 10 10 I DSS (mA) min max - 100 100 100 100 100 100 100 100 100 VGS(th) (V) min max 0.1 2 - 7 7 7 7 7 7 7 7 7 RDSON (Ω) max 45 20 20 20 20 20 22 22 22 22 Characteristics C rs t on (pF) (ns) min max typ max typ.0.6 1 - - - - t off (ns) typ - max 5 |S21(on)|2 (dB) max - - - 2.5 3 3 3 3 3 3 3 3 |S21(off)|2 (dB) min - MODE 30 30 30 30 30 30 30 30 30 depl. depl. depl. depl depl depl depl depl depl enh. Bold = highly recommended product NXP Semiconductors RF Manual 16th edition 91 N-channel, dual-gate MOSFETs Type Package With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R Partly internal bias BF904A SOT143 BF904AR SOT143R BF904AWR SOT343R BF909A SOT143 BF909AR SOT143R BF909AWR SOT343R SOT363 BF1102(R)(4) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R BF1203(5) SOT363 BF1204(4) SOT363 BF1206(5) SOT363 BF1207(5)(7)(8) SOT363 BF1208 (5)(6)(7) SOT666 BF1208D (5)(6)(7) SOT666 BF1210 (5)(6) SOT363 BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 (4) SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363 BF1218 (5)(6)(7) SOT363 Characteristics |Yfs| C is C os (mS) (pF) (pF) min max typ typ VDS ID (V) max (mA) max 12 12 12 20 20 20 20 12 12 12 40 40 40 20 40 30 30 30 30 30 3 3 3 4 4 4 2 2 2 27 27 27 25 20 20 18 18 18 - -2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 36 36 36 10 20 15 15 21 21 22 50 50 50 - 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 7 7 7 30 30 30 8 8 8 16 16 16 0.3 0.3 0.3 1.2 1.2 1.2 25 25 25 - 7 7 7 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 30 30 30 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 8 8 8 12 12 12 12 11 11 11 8 8 8 11 8 8 14 9 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 14 10 13 13 13 20 20 20 20 19 19 19 16 16 16 19 16 16 23 17 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 24 20 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1 1 1 1 1 1 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 22 22 22 36 36 36 36 23 23 23 25 25 25 23 25 25 33 29 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 26 25 30 30 30 50 50 50 35 35 35 40 40 40 35 40 40 48 44 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 41 40 I DSX (mA) min max VGS(th) (V) min max F @ 800 MHz (dB) typ VHF 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.5 1.5 1.5 1 1.2(1) 1(1) 1.8 1 1 1 X X X X X X X X X X X X X X X X 2.2(3) 2.2(3) 2.2(3) 1.2(2) 1.2(2) 1.2(2) 1.7 1.7 1.7 X X X X X X 2.2 2.2 2.2 3.6 3.6 3.6 2.8(3) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 2.1 2.1 1.3 1.3 1.3 2.3 2.3 2.3 1.6(2) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.8 0.85 2 2 2 2 2 2 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.6 1.4 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 1.1 1.4 X X X X X X X X X X X X X X X X X X X X X X X X X - X X X X X X X X X X X X X X X X X X X X X X X X X UHF (1) (2) (3) (4) (5) (6) (7) (8) @ 200 MHz C OSS C ig Two equal dual gate MOSFETs in one package Two low-noise gain amplifiers in one package Transistor A: fully internal bias, transistor B: partly internal bias Internal switching function Transistor A: partly internal bias, transistor B: fully internal bias N-channel, dual-gate MOSFETs for set-top boxes Characteristics Package Type BF1215 (1)(2)(3) SOT363 BF1216(1) SOT363 BF1217 SOT343 VDS ID (V) max 6 (mA) max 30 30 30 30 30 6 (mA) max 19.5 23 19.5 23 23 Two low-noise gain amplifiers in one package Transistor A: fully internal bias, transistor B: partly internal bias (3) Internal switching function Bold = highly recommended product (1) (2) 92 NXP Semiconductors RF Manual 16th edition V(th)gs IDSX (V) min 0.3 0.3 0.3 0.3 0.3 max 1 1 1 1 1 |Yfs| Cis COS (mS) typ 27 27 27 27 27 (pF) typ 2.5 2.5 2.5 2.5 2.5 (pF) typ 0.8 0.8 0.8 0.8 0.8 F@ 800 MHz (dB) typ 1.9 1.9 1.9 1.9 1.9 X-Mod @ 40 dB gain reduction (dB) typ 107 107 107 107 107 3.6 RF modules CATV module selection guide on www.nxp.com/catv Easy-to-use parametric filters help you choose the right CATV module for your design. C-types (China) ` CATV push-pulls, section 3.6.2: BGY588C, BGE788C, CGY888C ` CATV power doublers, section 3.6.3: BGD712C, CGD982HCi, CGD985HCi, CGD987HCi ` CATV optical receivers, section 3.6.4: BGO807C, BGO807CE CATV types for Chinese (C-types) and 1 GHz GaAs HFET line-ups The C-types are specially designed for the Chinese market, customized for two major governmental projects. The GaAs HFET family includes a complete 1 GHz line-up for high-end applications around the world. 1 GHz GaAs HFET high-end hybrids ` CATV push-pulls, section 3.6.2 : CGY1032, CGY1041, CGY1043, CGY1047, CGY1049 ` CATV power doublers, section 3.6.3: CGD1040Hi, CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H, CGD1044H 3.6.1 CATV push-pulls Type BGY588C BGY785A BGE788C BGY787 BGE787B BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888 3.6.2 Products by function Why choose NXP’s RF modules: ` Excellent linearity, stability, and reliability ` Rugged construction ` Extremely low noise ` High power gain ` Low total cost of ownership Frequency range (MHz) (1) Gain (dB) Slope (dB) FL (dB) (2) RLIN/RLOUT (dB) CTB (dB) (3) 40-550 33.5 - 35.5 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 0.2 - 1.7 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 1.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0.5 0.1 0.6 0.2 0.45 0.5 0.3 0.2 0.2 0.25 0.5 0.5 0.2 16 / 16 20 / 20 16 / 16 20 / 20 20 / 20 14 / 14 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 -57 -54.5 -49 -54.5 -48 40-750 40-870 -65 -64.5 -65 -60 -60 -63.5 X mod (dB) (3) -57.5 -54 -52 -65 -64.5 -72 -60 -63 CSO (dB) (3) @ Ch @ Vo (dBmV) NF @ fmax (dB) Itot (mA) -62 -62 -52 -57.5 -56 77 110 110 110 110 44 44 44 44 44 -67 -67.5 -63 -55 -60 -64 49 49 112 49 49 49 44 44 44 44 44 44 8 6 8 5 6.5 8 8 6 5 4 7 6.5 5.5 345 225 325 220 340 240 240 225 220 280 340 340 325 CATV push-pulls 1 GHz Frequency range (MHz) (1) RLIN/RLOUT CTB FL X mod CSO (dB) (1) (dB) (3) (dB) (3) (dB) (3) (dB) @ Vo NF @ fmax (dB) (dBmV) Itot (mA) Gain (dB) Slope (dB) CGY1041 21 - 22.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.3 CGY1043 23 - 24.5 1.2 - 2.7 0.9 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.2 265 CGY1047 27 - 28.5 1.5 - 2.5 0.8 20 / 18 -64 -60 -66 79 NTSC channels + 75 digital channels 44 4.5 250 Type CGY1049 40 - 1003 @ Ch 265 29 - 31 0.85 - 2.35 0.85 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.5 265 CGY1032 32 - 34 1.05 - 2.55 0.85 20 / 18 -62 -58 -64 79 NTSC channels + 75 digital channels 44 4.4 265 BGY1085A 18 - 19 0-2 0.3 20 / 20 -53 -54 -56 150 40 7.5 240 Bold = highly recommended product NXP Semiconductors RF Manual 16th edition 93 3.6.3 CATV power doublers Frequency range (MHz) (1) Type BGD712 BGD712C BGD714 BGD812 BGD814 BGD816L CGD942C CGD944C CGD1040HI CGD1042HI CGD1044HI CGD1046HI CGD1042H CGD1044H CGD982HCI CGD985HCI CGD987HCI 3.6.4 BGO807C BGO807CE Type BGY68 BGY66B BGY67 BGY67A BGR269 40 - 870 40 - 1003 Slope (dB) FL (dB) (1) 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18.2 - 18.8 19.7 - 20.3 21.2 - 21.8 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26.5 - 28 22 - 24 24 - 26 22 - 24 23.5 - 25.5 26 - 28 0.5 - 1.5 0.5 - 1.5 0.5 - 1.5 0.4 - 1.4 0.5 - 1.5 0.5 - 1.5 1-2 1-2 0.5 - 2 0.5 - 2 0.5 - 2 0.7 - 2.2 1.5 1 0.5 - 2 0.5 - 2 0.7 - 2 0.35 0.35 0.35 0.5 0.5 0.5 0.5 0.5 1 1 1 1 0.5 0.5 1 1 1 RLIN/RLOUT CTB (dB) (3) (dB) 17 / 17 17 / 17 23 / 23 25 / 23 25 / 24 22 / 25 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 21 20 / 21 20 / 20 20 / 20 20 / 20 X mod (dB) (3) -62 -62 -61 -57 -56 -55 -66 -66 -70 -70 -70 -75 -75 -75 -66 -66 -66 -63 -62 -62 -61 -58 -66 -66 -66 -65 -64 -68 -67 -67 -68 -68 -68 CSO (dB) (3) @ Ch @ Vo (dBmV) NF @ fmax (dB) Itot (mA) -63 -63 -62 -58 -57 -56 -66 -66 -76 -75 -75 -70 -76 -76 -69 -69 -66 112 112 112 132 132 132 98 98 79 79 79 79 79 79 98 98 98 44 44 44 44 44 44 48 48 58.4 58.4 58.4 56.4 59 59 48 48 48 7 7 7 7.5 7.5 7.5 3.5 3.5 5.5 5.5 5 5 5 5 5.5 5 5 395 410 395 395 395 360 450 450 440 440 440 450 450 450 440 440 440 CATV optical receivers Type 3.6.5 40 - 750 Gain (dB) Frequency range (MHz) (1) S (V/W) (4) Slope (dB) FL (dB) (1) RLOUT (dB) IMD3 (dB) (3) IMD2 (dB) (3) @ fmeasured (MHz) @ Pi(opt) (mW) NF @ fmax (dB) Itot (mA) Connectors 40 - 870 750 750 0-2 0-2 1 1 11 11 -71 -69 -55 -53 854.5 854.5 1 1 8.5 8.5 205 205 FC and SC FC and SC CSO (dB) (3) @ Ch @ Vo (dBmV) NF @ fmax (dB) Itot (mA) 4 14 22 22 28 50 48 50 50 50 3.5 5 5.5 5.5 5.5 135 135 215 215 160 CATV reverse hybrids Frequency range (MHz)(1) Gain (dB) Slope (dB) FL (dB) (1) RLIN/RLOUT (dB) CTB (dB) (3) X mod (dB) (3) 5 - 75 5 - 120 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.6 0.2 0.2 0.2 0.2 0.5 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 -68 -66 -67 -67 -57 -60 -54 -60 -59 -50 5 - 200 -66 Bold = highly recommended product Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo) FL is flatness of frequency response (3) The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2, and IMD3 are characterized, are @ fmax (4) S is minimum responsivity of optical receivers (1) (2) 94 NXP Semiconductors RF Manual 16th edition 3.7 RF power transistors NEW : RF power transistor selection guide on www.nxp.com/rfpower Easy-to-use parametric filters help you choose the right RF power transistor for your design. 3.7.1 RF power transistors for base stations Device naming conventions RF power transistors for base stations 22 L S -45 P R B N G V video bandwidth enhanced gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device P1dB power option: earless package option: low thermal resistivity operating frequency (in 100MHz; maximum) G: standard LDMOS LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si Products by function B L F 6 G Why choose NXP‘s RF power transistors for base stations: ` Leading technology (generations 6, 7, and 8 of LDMOS) ` Highest efficiency ` Best ruggedness ` Advanced Doherty amplifier designs ` Very broad band (video bandwidth enhanced) devices ` Industry’s first 3.8 GHz Doherty ` Industry's first three-way, 900 MHz Doherty ` Industry's first 50 V, 600 W, single-package Doherty NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures. 3.7.1.1 0.7 - 1.0 GHz line-up Test signal performance Type BLP7G22-10* BLM6G10-30(G) BLF6G10L-40BRN BLF6G10(S)-45 BLP7G07S-140P(G)* BLF8G10L(S)-300P* BLF8G10L(S)-160 BLF7G10L(S)-250 BLF6G10(LS)-200RN BLF6G10(LS)-135RN BLF6H10L(S)-160 BLF6G10(LS)-160RN BLF8G10L(S)-160V* BLF8G10LS-200GV* BLF6G10L(S)-260PRN BLF8G10LS-270GV* BLF8G10LS-400PGV* BLP7G09S-140P(G)* Product Driver MMIC Driver/final Final fmin (MHz) fmax (MHz) P1dB (W) 700 920 700 700 700 850 920 920 688 700 700 700 700 700 700 700 700 900 2200 960 1000 1000 900 960 960 960 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 10 30 40 45 140 300 160 250 200 135 160 160 160 200 260 270 400 140 Matching VDS (V) PL (W) BO (dB) ηD (%) Gp (dB) Test signal Package I/O I I O I/O I/O I/O I I I I/O I/O I I/O I/O O 28 28 28 28 28 28 30 30 28 28 50 32 30 28 28 28 28 28 2 2 2.5 1 35 60 35 60 40 26.5 45 32 35 45 40 56 79 35 7.0 11.8 12.0 16.5 6.0 7.0 6.6 6.2 7.0 7.1 5.5 7.0 6.6 6.5 8.1 6.8 7.0 6.0 26 11.5 15 8 28 30 29 30.5 28.5 28 30 27 28 28 26.5 28 27 28 17 29 23 23 19 19 19.7 19.5 20 21 20 22.5 30 19.3 22 19.6 19.4 19 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA SOT1179 SOT822 SOT1112A SOT608 SOT1224 SOT539 SOT502 SOT502 SOT502 SOT502 SOT467 SOT502 SOT1244 SOT1244C SOT539 SOT1244C SOT1242C SOT1224 Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production NXP Semiconductors RF Manual 16th edition 95 3.7.1.2 1.4 - 1.7 GHz line-up Test signal performance Type Product BLF6G21-10G BLP7G22-10 BLF6G15L-40BRN BLF6G15L(S)-40RN* BLF7G15LS-200 BLF6G15L-250PBRN BLF7G15LS-300P 3.7.1.3 Driver Driver/final Final Product BLF6G21-10G Driver BLP7G22-10 BLF6G20(S)-45 Driver/final BLF7G20L(S)-90P BLF6G20(LS)-75 BLF6G20(LS)-110 BLF6G20LS-140 BLF7G20LS-140P BLF6G20(LS)-180RN Final BLF8G20L(S)-200V* BLF6G20S-230PRN BLF7G20LS-260A* BLF8G20LS-270GV* BLF8G20LS-270PGV* BLF7G20L(S)-200 BLF7G20L(S)-250P Integrated BLD6G21L(S)-50 Doherty P1dB (W) 1 700 1450 1450 1450 1450 1450 2200 2200 1550 1550 1550 1550 1550 10 10 40 40 200 250 300 Matching VDS (V) PL (W) BO (dB) I/O I/O I/O I/O I/O 28 28 28 28 28 28 28 0.7 2 2.5 2.5 50 60 85 11.5 7.0 12.0 12.0 6.0 6.2 5.5 VDS (V) 28 28 28 28 28 28 28 28 30 28 28 28 28 28 28 28 PL (W) 0.7 2 2.5 40 29.5 25 35.5 60 40 55 65 50 50 56 55 70 BO (dB) 11.5 7.0 12.6 3.5 4.1 6.4 6.0 3.7 6.5 5.6 5.5 7.2 7.3 6.8 5.6 5.5 ηD (%) 15 26 14 41 37.5 32 30 41 27 33 32 44 25 28 33 35 Gp (dB) 18.5 17 19.2 19.5 19 19 16.5 17.5 17.2 17.5 17.5 15.5 17.8 19.4 18 18 Test signal Package 2-c WCDMA 2-c WCDMA 2-c WCDMA GSM EDGE GSM EDGE 2-c WCDMA 2-c WCDMA GSM EDGE 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA SOT538A SOT1179 SOT608 SOT1121 SOT502 SOT502 SOT502B SOT1121B SOT502 SOT1120 SOT539B SOT539B SOT1244C SOT1242C SOT502 SOT539 28 8 8.0 43 14.5 TD-SCDMA SOT1130 Product VDS (V) 28 28 26 26 28 28 28 28 28 28 28 28 28 28 28 28 28 32 32 30 28 28 28 28 28 PL (W) 0.7 2 6 30 13.5 2.5 2.5 2 3.2 45 45 17 25 20 30 30 43 55 50 40 48 50 50 55 70 BO (dB) 11.5 7.0 0.0 0.0 4.7 12.0 12.6 11.8 12.7 5.5 5.5 6.4 6.0 7.0 6.4 6.4 5.7 4.6 5.6 6.5 6.2 7.3 9.0 5.6 5.5 ηD (%) 15 26 39 35 30 16 13 9 10 34 34 30.5 29 28.5 28.5 32 30 30 27.5 25 28 26 26 31 31 Gp (dB) 18.5 17 15.5 13.5 19 19 18.5 29.5 30 18 18 18.7 18.5 19.1 17 18.5 18 18.5 17.5 16 20.2 17.8 18 18.5 18.5 Test signal Package BLF6G21-10G BLP7G22-10* Driver BLF3G21-6 BLF3G21-30 BLF6G22L(S)-40P BLF6G22L-40BN Driver/final BLF6G22(S)-45 BLM6G22-30(G) MMIC BLM7G22S-60PB(G)* BLF7G21LS-160 BLF7G21L(S)-160P BLF6G22LS-75 BLF6G22LS-100 BLF7G22L(S)-100P BLF6G22LS-130 BLF7G22L(S)-130 BLF7G22L(S)-160 Final BLF8G22LS-160BV* BLF6G22(LS)-180PN BLF6G22(LS)-180RN BLF8G22LS-200GV* BLF8G22LS-270GV* BLF8G22LS-400PGV* BLF7G22L(S)-200 BLF7G22L(S)-250P Integrated BLD6G22L(S)-50 Doherty 2-c WCDMA 2-c WCDMA CW CW 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA SOT538A SOT1179 SOT538A SOT467C SOT1121 SOT1112A SOT608 SOT822 SOT1212 SOT1121B SOT1121 SOT502B SOT502B SOT1121B SOT502B SOT502 SOT502B SOT1120B SOT539 SOT502 SOT1244C SOT1244C SOT1242C SOT502 SOT539 28 8 8.0 40 14 TD-SCDMA SOT1130 PL (W) BO (dB) 2 20 30 30 60 7.0 7.0 6.7 7.3 5.2 ηD (%) 15 26 13 13 29 33 31 Gp (dB) Test signal Package 18.5 17 22 21.5 19.5 18.5 18 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA SOT538A SOT1179 SOT1112A SOT1135 SOT502B SOT1110A SOT539B Test signal performance fmin (MHz) 1 700 1800 1427 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1805 1805 fmax (MHz) 2200 2200 2000 2170 2000 2000 2000 2000 2000 2000 2000 1900 2000 2000 1990 1880 2010 2025 P1dB Matching (W) 10 10 45 I/O 90 I/O 75 I/O 110 I/O 140 I/O 140 I/O 180 I/O 200 I/O 230 I/O 260 I/O 270 I/O 270 I/O 200 I/O 250 I/O 50 O 2.0 - 2.2 GHz line-up Type 3.7.1.5 fmax (MHz) 1.8 - 2.0 GHz line-up Type 3.7.1.4 fmin (MHz) Test signal performance fmin (MHz) 1 700 1800 1800 2110 2000 2000 2100 2000 1800 1800 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2110 2110 fmax (MHz) 2200 2200 2200 2200 2170 2200 2200 2200 2200 2050 2050 2200 2200 2200 2200 2200 2200 2200 2200 2200 2200 2200 2200 2170 2170 P1dB Matching (W) 10 10 6 30 40 I/O 40 I/O 45 I/O 30 I/O 60 I/O 160 I/O 160 I/O 75 I/O 100 I/O 100 I/O 130 I/O 130 I/O 160 I/O 160 I/O 180 I/O 180 I/O 200 I/O 270 I/O 400 I/O 200 I/O 250 I/O 2110 2170 50 fmin (MHz) fmax (MHz) P1dB (W) Matching VDS (V) 2300 2300 2300 2300 2300 2700 2400 2400 2400 2400 10 100 140 160 200 I I/O I/O I/O I/O 28 28 28 28 28 I/O 2.3 - 2.4 GHz line-up Test signal performance Type Product BLF6G27-10(G) BLF7G24L(S)-100 BLF7G24L(S)-140 BLF7G24L(S)-160P* BLF8G24L(S)-200P* Driver Final Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production 96 NXP Semiconductors RF Manual 16th edition ηD (%) 20 27 26.5 27.5 30 Gp (dB) Test signal Package 19 18 18.5 18.5 16.5 N-CDMA/IS95 N-CDMA/IS95 N-CDMA/IS95 N-CDMA/IS95 1-c WCDMA SOT975 SOT502 SOT502 SOT539 SOT539 2.5 - 2.7 GHz line-up Type Product BLF6G27-10(G) Driver BLF6G27L(S)-40P BLF6G27(S)-45 Driver/final BLF6G27L(S)-50BN BLF7G27L(S)-75P BLF6G27(LS)-75 BLF7G27L(S)-90P BLF7G27LS-90PG* BLF6G27(LS)-100 BLF7G27L(S)-100 BLF6G27(LS)-135 BLF7G27L(S)-140 Final BLF8G27LS-140 BLF8G27LS-140G* BLF7G27L(S)-150P BLF8G27LS-200PGV* BLF8G27LS-280PGV* BLF8G27LS-140V* BLF7G27L-200PB 3.7.1.7 Test signal performance fmax (MHz) 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 2700 P1dB Matching (W) 10 I 40 I/O 45 I/O 50 I/O 75 I/O 75 I/O 90 I/O 90 I/O 100 I/O 100 I/O 135 I/O 140 I/O 140 I/O 140 I/O 150 I/O 200 I/O 280 I/O 140 I/O 200 I/O VDS (V) 28 28 28 28 28 28 28 28 28 28 32 28 28 28 28 28 28 32 32 PL (W) 2 20 7 3 12 9 16 16 14 25 20 30 50 50 30 32 50 45 65 BO (dB) 7.0 3.0 8.1 12.2 8.0 9.2 7.5 7.5 8.5 6.0 8.3 6.7 4.5 4.5 7.0 8.0 7.5 4.9 4.9 VDS (V) 28 28 28 28 PL (W) 2 4.5 9 18.5 BO (dB) 7.0 7.4 7.4 7.3 3.5 - 3.8 GHz line-up Type Product BLF6G38-10(G) BLF6G38(S)-25 BLF6G38(LS)-50 BLF6G38(LS)-100 3.7.1.8 fmin (MHz) 2300 2500 2500 2500 2300 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2600 2600 Driver Driver/final Final fmin (MHz) 3400 3400 3400 3400 fmax (MHz) 3600 3800 3800 3600 P1dB (W) 10 25 50 100 Matching I/O I/O I/O I/O ηD (%) 20 37 24 14.5 26 23 29 27.5 23 28 22.5 22 31 31 26 23 21 30 29 Gp (dB) 19 17.5 18 16.5 17 17 18.5 17.5 17 18 16 16.5 18 18 16.5 17 16.4 16.5 16.5 Test signal Package N-CDMA/IS95 1-c WCDMA N-CDMA/IS95 2-c WCDMA N-CDMA/IS95 N-CDMA/IS95 N-CDMA/IS95 N-CDMA/IS95 1-c WCDMA N-CDMA/IS95 N-CDMA/IS95 N-CDMA/IS95 2-c WCDMA 2-c WCDMA N-CDMA/IS95 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA SOT975 SOT1121 SOT608 SOT1112 SOT1121 SOT502 SOT1121 SOT1121C SOT502 SOT502 SOT502 SOT502 SOT502B SOT502E SOT539 SOT1242C SOT1242C SOT1244B SOT1110A Test signal performance Gp ηD Test signal (dB) (%) 20 14 N-CDMA/IS95 24 15 N-CDMA/IS95 23 14 N-CDMA/IS95 21.5 13 N-CDMA/IS95 Package SOT975 SOT608 SOT502 SOT502 Power LDMOS Doherty designs PPEAK (dBm) POUT-AVG (dBm) VDS (V) Gain (dB) Drain efficiency (%) Type Main transistor Peak transistor 55.5 57.2 58 47 49.5 50 28 32 32 19 20 20.5 42 42 47 SYM SYM SYM 1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN 1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN 46 52 52.7 54.7 55.1 56.2 56.6 57 57.1 57.1 57.2 57.3 57.5 38 44 44.5 47.5 47.1 48 50 49.2 49 49 49.3 49.3 50.8 28 28 28 28 28 28 30 28 30 28 28 30 30 24 20 15 17.3 20.5 18.5 18.8 15.8 16.1 15 16.5 16 18 51 48 50 48 44 40 44.5 48 46.7 48 49.5 50 48.8 SYM SYM 3-WAY SYM SYM SYM SYM SYM ASYM 3-WAY SYM ASYM ASYM BLF6G21-10G BLF6G10S-45 BLF6G10S-45 BLF6G10LS-135RN 1/2 BLF6G10L(S)-260PRN BLF6G10LS-135RN BLF6G10LS-200RN BLF7G10LS-250 BLF8G10LS-160 BLF8G10LS-160 BLF7G10LS-250 BLF8G10LS-160 BLF6G10LS-200RN BLF6G21-10G BLF6G10S-45 2x BLF6G10S-45 BLF6G10LS-135RN 1/2 BLF6G10L(S)-260PRN BLF6G10LS-135RN BLF6G10LS-200RN BLF7G10LS-250 BLF7G10LS-250 2x BLF8G10LS-160 BLF7G10LS-250 BLF7G10LS-250 BLF7G10LS-250 925-960 57.7 869-894 57.9 869-894 58 869-894 58.9 925-960 58.9 869-894 59.2 1476-1555 MHz 1526-1555 56.6 1476-1511 58.1 1476-1511 58.6 1805-1880 MHz (DCS) 1805-1880 48 1805-1880 50 1805-1880 52.5 1845-1880 52.6 1805-1880 54 1805-1880 55 1805-1880 55.4 1805-1880 55.5 1805-1880 56.1 1805-1880 56.5 49.7 52 50 52 50.9 50.4 28 28 32 28 32 28 20.5 18.2 20.5 16.1 22 16 40 50.1 46 49.1 47 52 SYM / MPPM SYM / MMPP SYM ASYM SYM / MMPP 3-WAY BLF6G10L(S)-260PRN BLF6G10LS-260PRN BLF6G10-200RN BLF6G10LS-200RN BLF6G10L(S)-260PRN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF6G10LS-260PRN BLF6G10-200RN 2x BLF7G10LS-250 BLF6G10L(S)-260PRN 2x BLF7G10LS-250 48.6 49.6 50.6 28 28 32 18.4 16 16.5 42 42 42 SYM ASYM SYM BLF7G15LS-200 BLF7G15LS-200 BLF6G15LS-250PBRN BLF7G15LS-200 BLF7G15LS-300P BLF6G15LS-250PBRN 40 42.8 44.5 45 47 49 47.5 47 48.1 49 28 28 28 28 28 28 31 28 30 28 15.4 15.8 16 14.5 16 15.5 16.3 16 15.2 32 42.4 48 44 46.5 49 47 49 41 48 45.5 SYM SYM SYM SYM SYM SYM ASYM SYM ASYM ASYM 1/2 BLF6G22LS-40P 1/2 BLF7G20LS-90P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P BLF6G20LS-110 BLF7G21LS-160P BLF7G20LS-90P 1/2 BLF7G20L(S)-250P BLF7G20LS-90P BLF6G21-10G 1/2 BLF6G22LS-40P 1/2 BLF7G20LS-90P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P BLF6G20LS-110 BLF7G21LS-160P BLF7G21LS-160P 1/2 BLF7G20L(S)-250P BLF7G20LS-200 BLF7G20LS-200 Freq band (MHz) 728-821 MHz 790-821 790-821 728-768 869-960 MHz 920-960 869-894 869-894 920-960 920-960 920-960 920-960 920-960 920-960 920-960 869-894 920-960 869-894 Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production NXP Semiconductors RF Manual 16th edition 97 Products by function 3.7.1.6 PPEAK (dBm) 1805-1880 57.1 1805-1880 57.5 1805-1880 57.5 1805-1880 57.8 1805-1880 57.9 1805-1880 58.2 1805-1880 58.6 1805-1880 58.7 1930-1990 MHz (PCS) 1930-1990 53 1930-1990 54.3 1930-1990 55.2 1930-1990 55.5 1930-1990 55.7 1930-1990 56 1930-1990 56 1930-1990 57 1930-1990 57 Freq band (MHz) POUT-AVG (dBm) 49 49.5 50.5 50.4 50 50 51 51 VDS (V) 28 30 28 30 32 28 28 30 Gain (dB) 14.3 16 14 16 15.5 16 16 15.8 Drain efficiency (%) 45.1 42 48 41.5 37 42 47.6 47 Type Main transistor Peak transistor 3-WAY SYM ASYM SYM SYM / MMPP SYM MPPM 3-WAY 3-WAY BLF7G21LS-160P BLF7G20LS-200 BLF7G20LS-200 BLF7G20LS-250P BLF6G20-230PRN BLF7G20LS-250P BLF7G20LS-200 BLF7G20LS-200 2x BLF7G21LS-160P BLF7G20LS-200 BLF7G20LS-250P BLF7G20LS-250P BLF6G20-230PRN BLF7G20LS-250P 2x BLF7G20LS-200 2x BLF7G20LS-200 45 47.4 47.2 47.5 49 48 48 49 49.5 28 28 28 28 28 31 28 30 28 16.5 16.7 16 14.5 14.5 15.3 14.8 17.2 15.1 40 48.2 40 46 48 38 45 41 46 SYM SYM SYM ASYM ASYM SYM ASYM SYM ASYM BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-90P BLF7G21LS-160P BLF6G20LS-140 BLF7G20LS-140P BLF7G20LS-200 BLF7G21LS-160P BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-200 BLF7G20LS-200 BLF6G20LS-140 BLF7G20LS-200 BLF7G20LS-200 2x BLF7G21LS-160P 50 49.1 50.5 28 28 30 16 32 15.7 40 42.3 43 SYM ASYM 3-WAY BLF7G20LS-250P BLF6G21-10G BLF7G20LS-200 BLF7G20LS-250P BLF7G20LS-200 2x BLF7G20LS-200 39 42 42 44.5 44 44.5 28 28 28 28 28 28 14.4 17 17.2 15.2 15.6 16 41 46 47.2 41.5 43 44 SYM SYM SYM SYM SYM SYM BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P 1/2 BLF7G21LS-160P 39 40 40.5 46.5 47 47 47 46.4 49 47.9 48 48.5 49 49.2 50 28 28 28 28 28 28 28 28 28 28 28 28 28 28 32 13 17 17.2 16.5 17 17 15.5 15 14.5 17.3 15 16.2 14.2 16 17.5 38 44 46 43 43 43 38 43 47 42 48 41 46 47 40 SYM SYM SYM SYM SYM SYM SYM ASYM ASYM SYM 3-WAY SYM ASYM 3-WAY SYM BLD6G22L(S)-50 1/2 BLF6G22LS-40P 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-130 BLF7G22LS-130 BLF7G22LS-160 BLF7G22L(S)-130 BLF7G22L(S)-200 BLF7G22LS-160 BLF7G22LS-160 BLF7G22LS-250P BLD6G22L(S)-50 1/2 BLF6G22LS-40P 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-200 BLF7G22LS-200 BLF7G22LS-160 2x BLF7G22L(S)-130 BLF7G22L(S)-200 BLF7G22LS-200 2x BLF7G22L(S)-160 BLF7G22LS-250P 42 45 47 47.5 48.5 48.5 28 28 28 28 30 30 14.6 15 15.5 15.2 15 15 44 42.3 45 44 40 42 SYM SYM SYM ASYM SYM 3-WAY 1/2 BLF7G27L(S)-75P 1/2 BLF7G24LS-160P BLF7G24LS-100 BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 1/2 BLF7G27L(S)-75P 1/2 BLF7G24LS-160P BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-140 2x BLF7G24LS-100 39 40 40 42 42 42.3 44 44 44 44.5 47 47.2 47.3 47 28 28 28 28 28 28 28 28 28 28 28 30 28 28 14.6 14.4 14.6 15 15 14.5 14 14 14 14 15.2 15 15 15 46.2 41 44 43 37.5 39 40 40 40 38 43 41 41 40.4 ASYM SYM SYM SYM SYM SYM 3-WAY 3-WAY ASYM SYM SYM ASYM ASYM ASYM BLF6G27-10G 1/2 BLF6G27LS-40P 1/2 BLF6G27LS-40P 1/2 BLF7G27L(S)-75P BLF6G27S-45 1/2 BLF7G27LS-90P BLF6G27-45 BLF6G27-45 BLF6G27-45 1/2 BLF7G27LS-150P BLF7G27LS-100 BLF7G27LS-100 BLF7G27LS-100 BLF7G27LS-100 1/2 BLF6G27LS-40P 1/2 BLF6G27LS-40P 1/2 BLF6G27LS-40P 1/2 BLF7G27L(S)-75P BLF6G27S-45 1/2 BLF7G27LS-90P 2x BLF6G27-45 2x BLF6G27-45 BLF6G27(LS)-100 1/2 BLF7G27LS-150P BLF7G27LS-100 BLF7G27LS-140 BLF7G27LS-140 BLF7G27LS-140 43 45 28 28 11.5 10 32 30 SYM ASYM BLF6G38-50 BLF6G38LS-50 BLF6G38-50 BLF6G38LS-100 1930-1990 58.2 1930-1990 56.8 1930-1990 58.5 1805-2025 MHz (TD-SCDMA) 2010-2025 47 1880-2025 50 2010-2025 50 1805-2050 52 2010-2025 52.2 1880-1920 52.5 2110-2170 MHz (UMTS / LTE) 2110-2170 47 2110-2170 48.3 2110-2170 48.5 2110-2170 54.7 2110-2170 54.9 2110-2170 55 2110-2170 55 2110-2170 55.5 2110-2170 55.7 2110-2170 55.9 2110-2170 56 2110-2170 56.5 2110-2170 56.5 2110-2170 57.2 2110-2170 58 2300-2400 MHz (WiBRO / LTE) 2300-2400 49.5 2300-2400 53 2300-2400 54.1 2300-2400 55 2300-2400 56.2 2300-2400 56.8 2500-2700 MHz (WiMAX / LTE) 2620-2690 46.9 2580-2620 48.2 2620-2690 48.2 2570-2620 49.5 2500-2700 50 2500-2700 50.3 2500-2600 52 2600-2700 52 2600-2700 52 2500-2700 52.5 2570-2620 54.1 2620-2690 55.2 2545-2575 55.3 2570-2620 55.4 3300-3800 MHz (WiMAX) 3400-3600 51 3500-3700 52 98 NXP Semiconductors RF Manual 16th edition 3.7.2 RF power transistors for broadcast / ISM applications Why choose NXP’s RF power transistors for broadcast / ISM applications: ` Highest power ` Best-in-class design support ` Best ruggedness ` Very low thermal resistance design for unrivalled ` Best broadband performance reliability NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies. Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF), and High Frequency (HF) applications and covers ISM frequency bands. Type BLF571 BLF645 BLF871(S) BLF647 BLF572XR(S)* BLF647P(S)* BLF573(S) BLF369 BLF574 BLF574XR(S)* BLF578 BLF578XR(S)* BLF861A BLF174XR(S) BLF178XR(S) Product Driver Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) Test signal Package 10 1 1 1 10 10 10 10 10 10 10 10 470 10 10 500 1400 1000 800 500 1400 500 500 500 500 500 500 860 128 128 20 100 100 300 200 200 300 500 600 600 1200 1400 150 600 1400 50 32 40 32 50 32 50 32 50 50 50 50 32 50 50 20 100 100 150 200 200 300 500 500 600 1000 1400 150 600 1400 70 56 60 60 70 70 70 60 70 70 75 69 60 75 72 27,5 18 21 12,5 24 18 27.2 18 26.5 26 26 23 14 28 29 CW CW CW CW pulsed pulsed CW CW CW pulsed CW pulsed CW pulsed pulsed SOT467C SOT540A SOT467 SOT540A SOT1121 SOT1121 SOT502 SOT800-2 SOT539A SOT539 SOT539A SOT539 SOT540A SOT539 SOT539 Products by function 3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up 3.7.2.2 UHF 470-860 MHz LDMOS line-up Type BLF642 BLF871(S) BLF881(S) BLF878 BLF884P(S) BLF879P BLF888 BLF888A(S) BLF888B(S) Product Driver Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) 1 1 1 470 470 470 470 470 470 1400 1000 1000 860 860 860 860 860 860 35 100 140 300 300 500 500 600 600 32 40 50 42 50 42 50 50 50 35 100 140 300 150 200 250 250 250 63 60 49 46 46 47 46 46 46 19 21 21 21 21 21 19 21 21 Test signal CW CW CW CW CW CW CW CW CW Package SOT467C SOT467 SOT467 SOT979A SOT1121 SOT539A SOT979A SOT539 SOT539 3.7.2.3 2.45 GHz ISM LDMOS transistor line-up Type BLF25M612(G) BLF2425M7L(S)140 BLF2425M6L(S)180P BLF2425M7L(S)200 BLF2425M7L(S)250P Product Driver Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) Test signal Package 1 2400 2400 2400 2400 2500 2500 2500 2500 2500 12 140 180 200 250 28 28 28 28 28 12 140 180 200 250 60 52 55 52 55 19 17.5 12 15 15 CW CW CW CW CW SOT975 SOT502 SOT539 SOT502 SOT539 Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production NXP Semiconductors RF Manual 16th edition 99 3.7.3 RF power transistors for aerospace and defense Device naming conventions RF power transistors for aerospace and defense B L S 6 G 2731 S -120 G option: gullwing shaped leads P1dB power S: earless package P: pallet frequency band (in 100MHz; here: 2700-3100) G: standard LDMOS (≤ 28V) H: high voltage LDMOS (50V) LDMOS technology generation A: avionics frequency band operation L: L-band frequency operation S: S-band frequency operation L: high frequency power transistor B: semiconductor die made of Si Why choose NXP’s microwave RF power transistors ` High gain ` High efficiency ` Highest reliability ` Improved pulse droop and insertion phase ` Improved ruggedness - overdrive without risk to +5 dB ` Reduces component count and helps simplify L- and S-band radar design ` Uses non-toxic, RoHS-compliant packages 3.7.3.1 Avionics LDMOS transistors Type Product BLA1011-2 BLA1011-10 BLA1011(S)-200R BLA6G1011-200R BLA6G1011LS-200RG BLA0912-250R BLA1011-300 BLA6H0912-500 BLA6H1011-600 BLU6H0410L(S)-600P Driver Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) Test signal Package 1030 1030 1030 1030 1030 960 1030 960 1030 400 1090 1090 1090 1090 1090 1215 1090 1215 1090 1000 2 10 200 200 200 250 300 500 600 600 36 36 36 28 28 36 32 50 48 50 2 10 200 200 200 250 300 450 600 600 40 50 65 65 50 57 50 52 57 16 16 15 20 20 13.5 16.5 17 17 20 pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed SOT538A SOT467C SOT502 SOT502A SOT502 SOT502A SOT957A SOT634A SOT539A SOT539 fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) Test signal Package 500 1200 500 1200 1200 1200 1200 1400 1400 1400 1400 1400 1400 1400 25 35 130 250 250 250 500 50 36 50 36 36 50 50 25 35 130 250 250 250 500 50 43 50 47 45 55 50 19 13 17 13 15 17 17 pulsed pulsed pulsed pulsed pulsed pulsed pulsed SOT467C SOT467C SOT1135 SOT502A SOT502A SOT502 SOT539A 3.7.3.2 L-band LDMOS transistors Type Product BLL6H0514-25 BLL1214-35 BLL6H0514L(S)-130 BLL1214-250R BLL6G1214L-250 BLL6H1214L(S)-250 BLL6H1214(LS)-500 Driver Final Bold red = new, highly recommended product 100 NXP Semiconductors RF Manual 16th edition 3.7.3.3 S-band LDMOS transistors Type Product BLS6G2731-6G BLS6G3135(S)-20 BLS6G2735L(S)-30 BLS2933-100 BLS7G2325L-105 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS7G2729L(S)-350P BLS7G3135L(S)-350P 3.7.4 Driver Final fmin (MHz) fmax (MHz) P1dB (W) VDS (V) PL (W) ηD (%) Gp (dB) Test signal Package 2700 3100 2700 2900 2300 2700 3100 2700 2900 2900 2700 3100 3100 3500 3500 3300 2500 3100 3500 3100 3300 3300 2900 3500 6 20 30 100 105 120 120 130 130 150 350 350 32 32 32 32 30 32 32 32 32 32 32 32 6 20 30 100 105 120 120 130 130 150 350 350 33 45 50 40 55 48 43 50 47 47 50 43 15 15.5 13 8 16.5 13.5 11 12 12.5 13.5 13.5 10 pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed pulsed SOT975C SOT608 SOT1135 SOT502A SOT502A SOT502 SOT502 SOT922-1 SOT922-1 SOT922-1 SOT539 SOT539 Gallium Nitride (GaN) RF power amplifiers Device naming conventions GaN RF power amplifiers Device naming conventions GaN RF power amplifiers C L F 1G 0040 S # P Products by function P: push-pull indicator, P = push-pull type; no P means single-ended transistor 2 to 1500: nominal P3dB in Watts: eg 50 = 50W S earless type, S = earless; no S means eared package 35 to 60: upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz 00 to 40: lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz 1G: technology generation: 1G = 1st generation F: package style: F = ceramic, P = overmolded plastic L: high frequency power transistor C: primary material identifier: C = wide band-gap compound materials, eg GaN fmin (MHz) fmax (MHz) Pout (W) Matching VDS (V) ηD (%) Gp (dB) Test signal Package Applications CLF1G0060-10* 0 6000 10 - 50 54 14 Pulsed SOT1227 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0060-30* 0 6000 30 - 50 54 14 Pulsed SOT1227 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0035-50* 0 3500 50 - 50 54 14.2 Pulsed SOT467 CLF1G0035-100* 0 3500 100 - 50 52 14.8 Pulsed SOT467 Type Cellular, WiMAX, ISM, avionics, S-band, general purpose Cellular, WiMAX, ISM, avionics, S-band, general purpose 3.8 Wireless microcontroller chipsets and modules Type Module/ single chip JN5148-001-M00 Module JN5148-001-M03 Module JN5148-001-M04 Module JN5142-J01 Single chip JN5148-J01 Single chip JN5142-001 Single chip JN5148-001 Single chip JN5148-Z01 Single chip Application 2.4-2.4835 GHz JenNet & IEEE802.15.4 2.4-2.4835 GHz JenNet & IEEE802.15.4 2.4-2.4835 GHz JenNet & IEEE802.15.4 2.4-2.4835 GHz JenNet-IP 2.4-2.4835 GHz JenNet-IP 2.4-2.4835 GHz RF4CE & IEEE802.15.4 2.4-2.4835 GHz JenNet & IEEE802.15.4 2.4-2.4835 GHz ZigBee PRO TX RX Operating current current voltage Form factor TX power Receiver sensitivity +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V +20 dBm –98 dBm 110mA 23 mA 2.7-3.6 V +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V 6 x 6 mm QFN40 +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V 8 x 8 mm QFN56 +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V 6 x 6 mm QFN40 +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V 8 x 8 mm QFN56 +2.5 dBm –95 dBm 15 mA 17.5 mA 2.3-3.6 V 8 x 8 mm QFN56 Integral antenna 18 x 32 mm U.FL connector 18 x 30 mm U.FL connector 18 x 41 mm Bold red = new, highly recommended product * Check status in section 3.1, as this type is not yet released for mass production NXP Semiconductors RF Manual 16th edition 101 4. Designsupport This chapter will guide you through the available tools, documents, materials, and links that ease the design-in of our products. 4.1 KnowingNXP’sRFportfolio 4.3 Productevaluation Beyond this RF Manual, you can learn about NXP’s broad RF NXP offers a broad range of support material for evaluating RF portfolio through the NXP Technical Academy, various webinars products and optimizing the performance of your application. and the NXP channel on YouTube. Data sheets and application notes The NXP Technical Academy provides training modules where The first chapter of this RF Manual includes application you can learn about our products and applications, watch diagrams, recommended type numbers, and product highlights. hands-on trainings and even get certified! The training modules More in-depth application information is available in the can be viewed on mobile devices as well. second chapter, in product data sheets or in the Application Notes section of the NXP website (www.nxp.com/products/ NXP provides RF webinars on a regular basis. all_appnotes). (www.nxp.com/news/meet-nxp/webinars-and-podcasts.html#rf) Simulation tools On NXP’s YouTube channel (www.youtube.com/user/ To help you evaluate our products in your specific application, nxpsemiconductors), there are short videos that explain NXP's NXP offers various simulation tools, including small-signal portfolio, application information, tips and tricks to optimize touchstone S-parameters and parametric models that let you your systems performance, and more. customize the biasing conditions. The parametric models are based on best-in-class Mextram models and RFLDMOS models 4.2 ProductselectiononNXP.com developed by Philips Research, a recognized leader in physicsbased models. The parametric models fully support AC, DC, S-parameter, harmonic balance, and time-domain simulations. Every RF product has its own webpage on the NXP website. These models allow designers to assess the performance of Pages can be accessed in several ways: by product tree, by complex systems at an early stage of the development process. application area, or via cross-reference search. Or, simply type 'nxp <product>' in the Google search bar. The models are available for Advanced Design System (ADS), Microwave Office (MWO) and Ansoft Designer. Spice versions Product tree and parametric search of the parametric models, which can be used with almost any The product tree (www.nxp.com/products/rf) categorizes the commercial design tool, are also available. product by function. The parametric search tool allows you to refine the selection based on performance requirements. Application area To find out what NXP offers in each application area, use the Explore Application section of the NXP website. Cross reference NXP maintains a cross-reference of competitor products and NXP alternatives. This list can be searched online via the search tool bar on the NXP website or off-line by installing the X-Reference-Tool. 102 NXP Semiconductors RF Manual 16th edition 4.4 Additionaldesign-insupport If you need additional design-in support, please contact your local NXP sales representative or authorized distributor. You can also submit a question using the web form on the NXP website. 4.5 Applicationnotes Product category Filename Description Amplifiers AN11152 Reducing the Spurs at RF_out caused by the biasing choke during fast switching on and off in TDD system Amplifiers AN11148 BGU7003 1900MHz to 2100MHz LNA Application PLL’s and Oscillators AN11144 Universal Single LNB with TFF101x FIMOD IC Amplifiers AN11135 Replacing HMC625 by NXP BGA7204 Amplifiers AN11130 Bias module for 50 V GaN demonstration boards Transistors AN11118 BFU725F/N1 1.5 GHz LNA evaluation board Amplifiers AN11103 Externally-matched 900 MHz LNA using BGU7005 Transistors AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Amplifiers AN11101 BGU7007 GPS front end evaluation board Amplifiers AN11091 Ohmic FM LNA for embedded Antenna in Portable applications with BGU6102 Amplifiers AN11090 50 Ohm FM LNA for embedded Antenna in Portable applications with BGU6102 Amplifiers AN11086 BGU7003 LNA application for GPS L2 band Amplifiers AN11072 BGU7003 400MHz and 900 MHz applicaiton Amplifiers AN11068 Transistors AN11066 Amplifiers AN11062 Amplifiers AN11035 Amplifiers AN11034 Transistors AN11024 Transistors AN11010 Single stage Ku band LNA using BFU730F Transistors AN11007 Single stage 5-6 GHz WLAN LNA with BFU730F Transistors AN11006 Single stage 2.3_2.7GHz LNA with BFU730F Amplifiers AN10967 BLF578 demo for 352 MHz 1kW CW power Amplifiers AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Amplifiers AN10951 Amplifiers AN10945 Amplifiers AN10944 Amplifiers AN10933 Amplifiers AN10923 Amplifiers AN10921 Amplifiers AN10896 Amplifiers AN10885 Amplifiers AN10882 Amplifiers AN10869 Broadband DVB-T UHF power amplifier with the BLF888 Amplifiers AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Amplifiers AN10847 Doherty RF performance using the BLF6G20-230PRN Amplifiers AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Amplifiers AN10714 Using the BLF574 in the 88-108 MHz FM band BGU7005 matching options for improved LTE jammer immunity SDARS active antenna 1st stage LNA with BFU730F, 2.33 GHz Broadband DVB-T UHF power amplifier with the BLF888A 50 Ohm FM LNA for embedded Antenna in Portable applications with BGU7003W High Ohmic FM LNA for embedded Antenna in Portable applications with BGU7003W SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz Designsupport Customer evaluation kits and samples Several kits are available for evaluation of our products. Boards are provided with industry-standard RF connectors to facilitate measurements and integration in your application. The features and content of each kit are described on the NXP website and are listed on the corresponding product page. On the Customer Evaluation Kits page you can also find support materials, such as the latest user manuals and software updates. You can order small quantities of all products to build and evaluate prototypes. To obtain a kit or order samples, please contact your local NXP representative or authorized distributor. 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P 174 MHz to 230 MHz DVB-T power amplifier with the BLF881 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P 1.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier Mounting and Soldering of RF transistors Doherty RF performance analysis using the BLF7G22LS-130 Dependency of BLF578 gate bias voltage on temperature NXP Semiconductors RF Manual 16th edition 103 4.6 Simulationmodels 4.6.1 SimulationmodelsforRFpowerdevices Updates of this overview are available in PDF format at: http://www.nxp.com/wcm_documents/models/RFPower_ Model_Overview.pdf Type ADSmodel MicrowaveOffice model BLF6G38-10G Available Available BLF6G38-25 Available Available BLF6G38-50 Available Available BLF6G38LS-100 Available BLF6G38LS-50 Available Available BLF6G38S-25 Available Available BLF7G15LS-300P Available BLF7G15LS-200 Available BLF7G20L-200 Available BLF7G20L-250P Available BLF7G20L-90P Available BLF7G20LS-140P Available Type ADSmodel MicrowaveOffice model BLA6G1011-200R Available Available BLF7G20LS-200 Available BLA6G1011L-200RG Available Available BLF7G20LS-250P Available BLA6G1011LS-200RG Available Available BLF7G20LS-90P Available BLA6H0912-500 Available Available BLF7G21L-160P Available BLA6H1011-600 Available Available BLF7G21LS-160P Available BLF369 Available BLF7G22L-130 Available BLF3G21-6 Available BLF7G22L-160 Available BLF571 Available Available BLF7G22L-200 Available BLF573 Available Available BLF7G22L-250P Available BLF573S Available Available BLF7G22LS-130 Available BLF574 Available Available BLF7G22LS-160 Available BLF578 Available Available BLF7G22LS-200 Available BLF645 Available Available BLF7G22LS-250P Available BLF6G10-135RN Available Available BLF7G24L-100 Available BLF6G10-200RN Available BLF7G24L-140 Available BLF6G10-45 Available BLF7G24LS-100 Available BLF6G10L-260PRN Available BLF7G24LS-140 Available BLF6G10L-40BRN Available BLF7G27L-100 Available BLF6G10LS-135RN Available BLF7G27L-140 Available BLF6G10LS-200RN Available BLF7G27L-150P Available BLF6G10LS-260PRN Available BLF7G27L-200PB Available BLF6G10S-45 Available BLF7G27L-75P Available BLF6G15L-250PBRN Available BLF7G27L-90P Available BLF6G15L-40BRN Available BLF7G27LS-100 Available BLF6G20-180RN Available BLF7G27LS-140 Available BLF6G20-230PRN Available BLF7G27LS-150P Available BLF6G20-45 Available BLF7G27LS-75P Available BLF6G20LS-180RN Available BLF7G27LS-90P Available BLF6G20S-230PRN Available BLF871 Available Available BLF6G20S-45 Available Available BLF871S Available Available BLF6G21-10G Available Available BLF878 Available Available BLF6G22-180RN Available BLF881 Available Available BLF6G22-45 Available BLF881S Available Available BLF6G22L-40P Available BLF888 Available BLF6G22LS-180RN Available BLF888A Available Available BLF6G22LS-40P Available BLF888AS Available Available BLF6G22S-45 Available BLL6H0514-25 Available Available BLF6G27-10 Available BLL6H0514L-130 Available Available BLF6G27-10G Available BLL6H0514LS-130 Available Available BLF6G27-135 Available BLL6H1214-500 Available BLF6G27-45 Available BLL6H1214L-250 Available Available BLF6G27-75 Available BLL6H1214LS-250 Available Available BLF6G27L-40P Available BLM6G22-30 Available BLF6G27LS-135 Available BLS6G2731-6G Available BLF6G27LS-40P Available BLS6G2731S-130 Available Available BLF6G27LS-75 Available BLS6G3135-120 Available Available BLF6G27S-45 Available BLS6G3135-20 Available BLF6G38-10 Available BLS6G3135S-120 Available BLF6G38-100 Available BLS6G3135S-20 Available 104 NXP Semiconductors RF Manual 16th edition Available Available Available Available Available Available Available Available Available Available Available Available BFG18A BFQ19 BFQ540 BFQ67 BFQ67W BFR106 BFR505 BFR505T BFR520 BFR540 BFR92A BFR92AW BFR93A BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Spicemodel Mextram model Spicemodel S-parameters Spicemodel √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ NXP Semiconductors RF Manual 16th edition Designsupport √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ AnsoftDesignerdesignkit Spicemodel BFM520 BFQ149 √ MicrowaveOfficedesignkit S-parameters BFG67 BFG67/X BFG10 BFG10W BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG505/X BFG505W/X BFG520 BFG520W BFG520X BFG520/XR BFG540 BFG540/X BFG540/XR BFG540W BFG541 BFG590 BFG590/X BFG591 BFG92A/X BFG93A BFG94 BFG97 BFM505 S-parameters Type Evaluation board ADS2009designkitv2.2 S-parameters 4.6.2 SimulationmodelsforRFbipolarwidebandtransistors 105 √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model √ Mextram model √ Spicemodel Mextram model Spicemodel S-parameters √ √ √ √ √ √ √ √ √ AnsoftDesignerdesignkit Spicemodel √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ MicrowaveOfficedesignkit S-parameters BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BFU725F BFU725F/N1 BFU610F BFU630F BFU660F BFU690F BFU710F BFU730F BFU730LX BFU760F BFU790F PBR941 PBR951 PRF947 PRF949 PRF957 Spicemodel Type S-parameters Evaluation board ADS2009designkitv2.2 S-parameters 4.6.2 SimulationmodelsforRFbipolarwidebandtransistors(continued) √ √ √ √ √ √ √ BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF511 BF513 BF862 BF904 BF908 BF909 BF998 √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model S-parameters √ √ √ √ √ √ √ √ √ Spicemodel AnsoftDesignerdesignkit Mextram model MicrowaveOfficedesignkit Spicemodel Mextram model Spicemodel S-parameters Spicemodel S-parameters Type Evaluation board ADS2009designkitv2.2 S-parameters 4.6.3 SimulationmodelsforRFMOSFETtransistors √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ BB145B BB149 BB149A BB156 BB179 BB179B BB201 BB202 BB207 BB208-2 106 √ √ √ √ √ √ √ √ √ √ NXP Semiconductors RF Manual 16th edition √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model S-parameters √ √ √ √ √ √ √ √ √ √ Spicemodel AnsoftDesignerdesignkit Mextram model MicrowaveOfficedesignkit Spicemodel Mextram model Spicemodel S-parameters Spicemodel S-parameters Type Evaluation board ADS2009designkitv2.2 S-parameters 4.6.4 SimulationmodelsforRFvaricapdiodes √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ √ Mextram model Spicemodel S-parameters Mextram model AnsoftDesignerdesignkit Spicemodel Mextram model Spicemodel S-parameters Spicemodel MicrowaveOfficedesignkit Designsupport BGA2001 BGA2002 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGA2714 BGA2715 BGA2716 BGA2717 BGA2011 BGA2012 BGA2031 BGA6289 BGA6489 BGA6589 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA7024 BGA7027 BGA7124 BGA7127 BGM1011 BGM1012 BGM1013 BGM1014 BGU6102 BGU7031 BGU7032 BGU7033 BGU7041 BGU7042 BGU7044 BGU7045 BGU7050 BGU7051 BGU7052 BGU7053 BGU7061 BGU7062 BGU7063 BGU7064 BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU8007 S-parameters Type Evaluation board ADS2009designkitv2.2 S-parameters 4.6.5 SimulationmodelsforRFMMICamplifiers √ √ √ √ √ NXP Semiconductors RF Manual 16th edition 107 5. Cross-references&replacements NXP cross-references: http://www.nxp.com/xref/nxp?typenumber NXP end-of-life: http://www.nxp.com/products/eol/ 5.1 Cross-references: manufacturer types versus NXP types In alphabetical order of manufacturer type Abbreviations: Base station Broadcasts BS diode CATV OR CATV PD CATV PPA CATV PPA/HG CATV RA FET A&D MMIC Varicap WB trs 1-4 WB trs 5-7 Base station power transistors Broadcast power transistors Band switch diode CATV optical receiver CATV power doubler CATV push-pull amplifier CATV push-pull amplifier high gain CATV reverse amplifier Field-effect transistor Microwave power transistors Monolithic microwave integrated circuit Varicap diode Wideband transistor 1-4 generation Wideband transistor 5-7 generation Manufacturertype Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family 3001 3003 3005 10502 AH125 SXB-4089 0510-50A 1011LD110A 1011LD110B 1014-12 1014-2 1014-6A 10AM20 1617-35 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239 1SV241 1SV246 Microsemi Microsemi Microsemi Microsemi Triquint RFMD Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba Sanyo Sanyo BLS7G3135LS-350P BLS7G3135L-350P BLS6G3135S-20 BLA1011-200R BGA7127 BGA7127 BLF1043 BLA1011-300 BLA1011S-200 BLL1214-250R BLL1214-35 BLL6G1214L-250 BLF1046 BLL6G1214LS-250 BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B BAP64-02 BAP64-04W A&D A&D A&D A&D MMIC MMIC Broadcast A&D A&D A&D A&D A&D Broadcast A&D BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap PIN diode PIN diode 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 1SV278 1SV279 1SV282 1SV282 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308 1T362 1T362A 1T363A Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba PEC PEC PEC BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BB179 BB179 BB178 BB187 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02 BB149 BB149A BB153 PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode Varicap Varicap Varicap 108 NXP Semiconductors RF Manual 16th edition Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family 1T368A 1T369 1T379 1T397 1T399 1T402 1T403 1T404A 1T405A 1T406 1T408 2324-12L 2324-20 2324-25 2424-25 2F1G20DS 2F1G20DS 2F1G20P 2F1G22DS 2F1G22DS 2F1G22DS 2F1G23P 2F1G23P 2F1G24D 2F1G24D 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N4856 2N4857 2N4858 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5508 2SC5508 2SC5593 PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC Microsemi Microsemi Microsemi Microsemi RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Toshiba Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Electronics Renesas Electronics Renesas Electronics BB148 BB152 BB131 BB152 BB148 BB179B BB178 BB187 BB187 BB182 BB187 BLS6G2731S-120 BLS6G2731-6G BLS6G2731-120 BLS6G2731S-130 CGD1040Hi CGD1042H CGY1041 CGD1042H CGD1042Hi CGD982HCi CGY1041 CGY1043 CGD1044Hi CGD985HCi CGD1044H BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C BSR56 BSR57 BSR58 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFU660F BFU660F BFG410W Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap A&D A&D A&D A&D CATV PD CATV PD CATV PP CATV PD CATV PD CATV PD CATV PP CATV PP CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 2SC5594 2SC5623 2SC5624 2SC5631 2SC6023 2SK210BL 2SK508 3SK290 AD8376 AD8376 ADL5354 ADL5356 ADL5358 ADL5372 ADL5375 ADL5812 ADRF660x AH115-S8G AH116-S8G AH118 AH118 AH118 AH118 AH125 AH125 AH212-EG AH212-S8G AH215 AH215 AH215-S8G AH225-S8G AH312-S8G AH314-G AH315-G AH315-G AH315-G AH315-G AH315-G AH315-G AN26112A AN26120A AN26122A BA592 BA595 BA595 BA597 BA885 BA892 BA892-02V BA892-02V BA892V-02V-GS08 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR63V-02V-GS08 BAR63V-05W-GS08 BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Sanyo Renesas Electronics Renesas Electronics Renesas Electronics ADI ADI ADI ADI ADI ADI ADI ADI ADI Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Triquint Panasonic Panasonic Panasonic Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon BFG425W BFG410W BFG425W BFQ540 BFG424W PMBFJ309 PMBFJ308 BF998WR BGA7350 BGA7351 BGX7221 BGX7221 BGX7220 BGX710x BGX710x BGX7221 BGX721x BLF8G27LS-140V BLF6G10-135RN BGA7024 BGA7024 BGA7124 BGA7124 BGA7027 BGA7127 BLF6G38-10 BLF6G38-100 BGA7130 BGA7130 BLF6G27-10 BLF6G27-10G BLF7G24L-100 BLF6G27LS-100 BLF6G10-160RN BLF6G10-200RN BLF7G24L-140 BLF7G24L-160P BLF6G27LS-135 BLF6G27LS-40P BGU7045 BGU7042 BGU7045 BA591 BAP51-03 BAP70-03 BAP70-03 BAP70-03 BA891 BA277 BA891 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63LX BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP63-02 BAP63-05W BAP64LX BAP64-02 BAP64-02 BAP64-03 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 5-7 FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC Base station Base station MMIC MMIC MMIC MMIC MMIC MMIC Base station Base station MMIC MMIC Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station MMIC MMIC MMIC BS diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode NXP Semiconductors RF Manual 16th edition 109 Cross-references &replacements Manufacturertype Manufacturertype Manufacturer NXPtype Product family BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64V-02V-GS08 BAR64V-04-GS08 BAR64V-05-GS08 BAR64V-06-GS08 BAR64V-06W-GS08 BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR65V-02V-GS08 BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005R BF1005S BF1005SR BF2030 BF2030 BF2030R BF2030R BF2030W BF2030W BF2040 BF2040R BF2040W BF5020 BF5020R BF5020W BF5030W BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Infineon Infineon Infineon Infineon Renesas Electronics Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64-02 BAP64-04 BAP64-05 BAP64-06 BAP64-06W BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP65-02 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105R BF1105 BF1105R BF1211 BF1212 BF1211R BF1212R BF1211WR BF1212WR BF909 BF909R BF909WR BF1212 BF1212R BF1212WR BF909WR BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET 110 NXP Semiconductors RF Manual 16th edition Manufacturertype Manufacturer NXPtype Product family BF996S BF998 BF998 BF998-GS08 BF998R BF998R BF998R-GS08 BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP181T-GS08 BFP182 BFP183 BFP183R BFP183T-GS08 BFP183TW-GS08 BFP193 BFP193W BFP196T-GS08 BFP196TR-GS08 BFP196TRW-GS08 BFP196TW-GS08 BFP196W BFP280 BFP405 BFP420 BFP450 BFP620 BFP640 Vishay Infineon Vishay Vishay Vishay Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon BF996S BF998 BF998 BF998 BF998R BF998R BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG520/X BFG520W/X BFG540/X BFG540W/XR BFG540/X BFG540/XR BFG540W/XR BFG540W/X BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFU660F BFU630F, BFU660F FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 BFP650 Infineon BFU690F, BFU760F, BFU790F WB trs 5-7 BFP67-GS08 BFP67R-GS08 BFP720 BFP740 BFP740 BFP740F Vishay Vishay Infineon Infineon Infineon Infineon BFG67/X BFG67/X BFU710F, BFU730F BFU710F, BFU730F BFU725F BFU725F WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 BFP750 Infineon BFU690F, BFU760F, BFU790F WB trs 5-7 BFP81 BFP92A-GS08 BFP93A BFP93A-GS08 BFQ193 BFQ19S BFQ67-GS08 BFR106 BFR180 BFR180W BFR181 BFR181T-GS08 BFR181TW-GS08 BFR181W BFR182 BFR182W BFR183 BFR183T-GS08 BFR183TW-GS08 BFR183W BFR193 BFR193TW-GS08 BFR193W BFR196T-GS08 BFR196TW-GS08 BFR35AP BFR92AL BFR92AW-GS08 BFR92P BFR92W BFR93A Infineon Vishay Infineon Vishay Infineon Infineon Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Infineon Vishay Vishay Infineon Freescale Vishay Infineon Infineon Infineon BFG92A/X BFG92A/X BFG93A/X BFG93A/X BFQ540 BFQ19 BFQ67W BFR106 BFR505 BFS505 BFR520 BFR520 BFS520 BFS520 PBR941 PRF947 PBR951 PBR951 PRF957 PRF957 PBR951 PRF957 PRF957 BFR540 BFS540 BFR92A BFR92A BFR92AW BFR92A BFR92AW BFR93A WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family BFR93AL BFR93AW BFR93AW-GS08 BFR93-GS08 BFS17-GS08 BFS17-GS08 BFS17L BFS17P BFS17W BFS17W-GS08 BFS481 BFS483 BFT92 BFT93 BG3123 BG3123R BG3130 BG3130R BG3430R BG5120K BG5130R BG5412K BGA428 BGA461 BGA615 BGA715 BGA915 BGB707 BGB717 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CMM6004-SC CMM6004-SC CMM6004-SC CMM6004-SC CMY91 CMY91 CXE1089Z CXE1089Z D10040180GT D10040180GTH D10040200GT D10040200GTH D10040200P1 D10040200PH1 D10040220GT D10040220GTH D10040230P1 D10040230PH1 D10040240GT D10040240GTH D10040250GT D10040250GTH D10040270GT D10040270GTH D10040270GTL D8740180GT D8740180GTH D8740220GT D8740220GTH D8740240GT D8740240GTH D8740250GT D8740250GTH D8740270GT Freescale Infineon Vishay Vishay Vishay Vishay Freescale Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Standard Standard Standard Standard Standard Standard Standard Standard Standard Mimix Mimix Mimix Mimix Infineon Infineon RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD BFR93A BFR93AW BFR93AW BFR93A BFS17 BFS17A BFS17 BFS17A BFS17W BFS17W BFM505 BFM520 BFT92 BFT93 BF1203 BF1203 BF1214 BF1214 BF1207 BF1210 BF1206 BF1208D BGU7003 BGU7003 BGU7007 BGU8007 BGU7005 BGU6102 BGU6102 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGA7024 BGA7124 BGA7124 BGA7204 BGA2022 BGA2022 BGA6489 BGA6589 CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD942C CGD942C CGD942C CGD942C CGD944C CGD944C CGD944C CGD944C CGD944C WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA MMIC MMIC MMIC MMIC MMIC WB trs 1-4 MMIC MMIC CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD D8740270GTH D8740320GT D8740320GTH EC2C03C FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HMC454ST89E HMC454ST89E HMC454ST89E HMC617LP3 HMC618LP3 HMC625 HMC667LP2 HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315 HVU316 HVU363A HVU363A HVU363B IB0912L200 IB0912L30 IB0912L70 IB0912M210 RFMD RFMD RFMD Sanyo Skyworks Skyworks Agilent Agilent Agilent Hittite Hittite Hittite Hittite Hittite Hittite Hittite Renesas Electronics Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Integra Integra Integra Integra CGD944C CGD888C CGD888C BB145B BB148 BB178 BFG410W BFG425W BFG480W BGA7027 BGA7127 BGA7127 BGU7051 BGU7052 BGA7204 BGU7053 BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148 BB131 BB148 BB153 BB148 BLA1011-200R BLA1011-2 BLA1011-200 BLA0912-250 CATV PD CATV PD CATV PD Varicap Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 MMIC MMIC MMIC MMIC MMIC MMIC MMIC BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap A&D A&D A&D A&D NXP Semiconductors RF Manual 16th edition Cross-references &replacements Manufacturertype 111 Manufacturertype Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family IB0912M350 IB0912M500 IB0912M600 IB0912M70 IB1011S1000 IB1011S1500 IB1011S190 IB1011S250 IB1011S350 IB1011S70 IB1214M130 IB1214M150 IB1214M300 IB1214M32 IB1214M375 IB1214M55 IB1214M6 IB2729M25 IB2729M5 IB2731M110 IB2731MH110 IB2731MH25 IB2931MH155 IB2931MH55 IB2934M100 IB3135MH100 IB3135MH20 IB3135MH45 IB3135MH5 IB3135MH65 IB3135MH75 IB450S300 IB450S500 IDM165L650 IDM175CW300 IDM265L650 IDM30512CW100 IDM30512CW20 IDM30512CW50 IDM500CW120 IDM500CW150 IDM500CW200 IDM500CW300 IDM500CW80 ILD0506EL350 ILD0912M150HV ILD0912M15HV ILD0912M400HV ILD0912M60 ILD1214M10 ILD1214M60 ILD2731M140 ILD2735M120 ILD2933M130 INA-51063 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S KP2310R KTK920* KTK920BT KTK920T KV1835E LTC5590 LTC5591 LTC5592 MA2S077 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Agilent Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toko KEC KEC KEC Toko Linear Technology Linear Technology Linear Technology Standard Panasonic Panasonic Panasonic Panasonic Renesas Electronics Panasonic BLA0912-250R BLA6H0912-500 BLA1011-10 BLL6H0514LS-130 BLA6G1011LS-200RG BLA6H1011-600 BLA1011S-200 BLA1011S-200R BLA6G1011-200R BLA1011-300 BLL6H1214-500 BLL6G1214L-250 BLL6G1214LS-250 BLL1214-250R BLL6H1214L-250 BLL1214-35 BLL1214-250 BLS7G2729LS-350P BLS7G2729L-350P BLS6G2731-6G BLS6G2731S-130 BLS6G2731S-120 BLS6G2933S-130 BLS2933-100 BLS7G2933S-150 BLS7G3135LS-350P BLS6G3135-20 BLS6G3135S-120 BLS6G3135-120 BLS6G3135S-20 BLS7G3135L-350P BLF578XR BLF544 BLF1043 BLF369 BLF1046 BLF574XRS BLF574 BLF574XR BLF572XR BLF572XRS BLF573 BLF573S BLF571 BLF988 BLL6H0514-25 BLU6H0410LS-600P BLL6H0514L-130 BLU6H0410L-600P BLL6H1214LS-250 BLL6H1214LS-500 BLS6G2731-120 BLS6G2735L-30 BLS6G2735LS-30 BGA2001 BAP65-02 BAP65-03 BAP51-02 BAP51-03 BAP63-02 BAP50-02 BA891 BAP64-04W BF1108 BF1108 BF1108R BB199 BGX7220 BGX7221 BGX7221 BA277 BB178 BB187 BB179 BB182 BB202 BB153 A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D A&D Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast A&D A&D A&D A&D A&D A&D A&D A&D A&D MMIC PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode FET FET FET Varicap MMIC MMIC MMIC BS diode Varicap Varicap Varicap Varicap Varicap Varicap MA366 MA368 MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MAX19985A MAX19995 MAX2634 MAX2657 MAX2658 MAX2659 MAX2667 MAX2687 MAX2694 MC7712 MC7716 MC7722 MC7726 MC-7831 MC7831-HA MC-7831-HA MC-7832 MC7832-HA MC-7832-HA MC-7833 MC-7836 MC-7836 MC-7846 MC-7847 MC7852 MC7866 MC-7882 MC-7883 MC-7884 MC-7891 MC7893 MC7893 MC-7893 MC7894 MC7894 MC-7894 MC7896 MC7896 MC-7896 MCH4009 MD7IC18120GNR1 MD7IC18120NR1 MD7IC2050GNR1 MD7IC21100GNR1 MD7IC21100NBR1 MD7IC21100NR1 MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1 MD7IC2755GNR1 MD7IC2755NR1 MD8IC970GNR1 MD8IC970NR1 MDS60L MGA631P8 MGA632P8 MGA632P8 MHVIC915NR2 MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic MAXIM MAXIM Maxim Maxim Maxim Maxim Maxim Maxim Maxim Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Sanyo Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Avago Avago Avago Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale BB148 BB131 BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGX7220 BGX7221 BGU6102 BGU8007 BGU7005 BGU7005 BGU8007 BGU7005 BGU7005 BGY785A BGY787 BGY785A BGY787 BGY885A BGY1085A BGY1085A BGY887 CGY1041 CGY1041 BGY887B BGY887B CGY1047 CGD942C CGD944C BGY885A BGD816L BGD814 CGD942C CGD944C CGD1042H CGD1042Hi CGD982HCi CGD1042H CGD1044Hi CGD985HCi CDG1044H CGD1046Hi CGD987HCi CGD1044H BFG424F BLF6G20-180RN BLF6G20-230PRN BLF7G20LS-200 BLF6G22-45 BLF6G22L-40BN BLF6G22LS-40BN BLF6G22LS-100 BLF6G22LS-130 BLF6G22LS-180PN BLF6G27-100 BLF6G27-135 BLF8G10LS-400PGV BLF8G10L-300P BLA1011S-200R BGU7051 BGU7052 BGU7053 BLF6G10LS-135RN BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC CATV PPA CATV PPA CATV PPA CATV PPA CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD WB trs 5-7 Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station A&D MMIC MMIC MMIC Base station CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA 112 NXP Semiconductors RF Manual 16th edition Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW7182B MHW7182C MHW7185C2 MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310 BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MMG3004NT1 MMG3004NT1 MMG3004NT1 MMG3014 MMG3014 MMG3014 MMG3014 MRF282ZR1 MRF577 MRF5811L MRF5P21045NR1 MRF5S9100NBR1 MRF5S9101NBR1 MRF5S9150HR3 MRF5S9150HSR3 MRF6P24190HR6 MRF6P24190HR6 MRF6P27160HR5 MRF6P27160HR5 MRF6P27160HR6 MRF6P27160HR6 MRF6S18060NR1 MRF6S18060NR1 MRF6S20010GNR1 MRF6S20010NR1 MRF6S21050LR3 MRF6S21050LSR3 MRF6S21100HR3 MRF6S21140HR3 MRF6S21190HSR3 MRF6S24140HR3 MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HSR3 MRF6S27015GNR1 MRF6S27015NR1 MRF6S27085HR3 MRF6S27085HR3 MRF6S27085HR5 MRF6S27085HSR3 MRF6S27085HSR5 MRF6V10010NR4 MRF6V12250HR3 MRF6V12250HR5 MRF6V12250HSR3 MRF6V12500HR5 MRF6V12500HSR3 MRF6V12500HSR5 MRF6V13250HR3 MRF6V13250HR3 MRF6V13250HR3 MRF6V13250HR3 MRF6V13250HR5 MRF6V13250HR5 MRF6V13250HR5 MRF6V13250HSR3 MRF6V13250HSR3 MRF6V13250HSR3 MRF6V13250HSR5 MRF6V13250HSR5 MRF6V13250HSR5 MRF6V14300HR3 MRF6V14300HR5 MRF6V14300HSR3 MRF6V14300HSR3 MRF6V14300HSR5 MRF6V14300HSR5 MRF6V2010NBR1 Freescale Freescale Freescale Freescale Freescale ONSemicond. ONSemicond. Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BGA7027 BGA7127 BGA7127 BGA7024 BGA7124 BGA7124 BGA7204 BLF7G20LS-250P PRF957 BFG93A/X BLF6G22LS-180RN BLF6G10-135RN BLF6G10LS-200RN BLF6G10-160RN BLF6G10-200RN BLF6G27-10G BLF7G24LS-160P BLF7G27L-150P BLF8G27LS-140 BLF7G27L-90P BLF8G27LS-140G BLF6G20-110 BLF6G20-180PN BLF6G22LS-75 BLF6G22S-45 BLF7G22L-130 BLF7G22L-160 BLF7G22LS-130 BLF7G22LS-160 BLF8G22LS-200GV BLF7G24L-100 BLF7G27L-75P BLF7G24L-140 BLF7G27LS-75P BLF7G22LS-250P BLF6G27-10 BLF7G27LS-100 BLF8G27LS-200GV BLF8G27LS-200PGV BLF8G27LS-280PGV BLF7G27L-135 BLA1011-200R BLA0912-250 BLA0912-250R BLA6H0912-500 BLA1011-10 BLA1011-2 BLA1011-200 BLF6G15L-500H BLF6G15LS-250PBRN BLL6G1214LS-250 BLL6H1214LS-500 BLF6G15LS-500H BLF6G15LS-40RN BLL6H1214-500 BLF6G13L-250P BLF7G20L-90P BLL6H1214L-250 BLF6G13LS-250P BLF7G20LS-90P BLL6H1214LS-250 BLL1214-250 BLL1214-250R BLF7G15LS-200 BLL1214-35 BLF7G15LS-300P BLL6G1214L-250 BLF573S WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD MMIC MMIC MMIC MMIC MMIC MMIC MMIC Base station WB trs 1-4 WB trs 1-4 Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station A&D A&D A&D A&D A&D A&D A&D Base station Base station A&D A&D Base station Base station A&D Base station Base station A&D Base station Base station A&D A&D A&D Base station A&D Base station A&D Broadcast NXP Semiconductors RF Manual 16th edition 113 Cross-references &replacements Manufacturertype Manufacturertype Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family MRF6V2010NBR5 MRF6V2010NR1 MRF6V2150NBR1 MRF6V2150NBR5 MRF6V2150NR1 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6VP11KHR5 MRF6VP11KHR6 MRF6VP21KHR5 MRF6VP21KHR6 MRF6VP2600HR5 MRF6VP3091NBR1 MRF6VP3091NBR5 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3450HSR6 MRF6VP41KHR5 MRF6VP41KHR6 MRF6VP41KHR7 MRF6VP41KHSR5 MRF6VP41KHSR6 MRF6VP41KHSR7 MRF7P20040HR3 MRF7P20040HSR3 MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HSR5 MRF7S18170HSR3 MRF7S21080HSR3 MRF7S21110HR3 MRF7S21110HSR3 MRF7S27130HR3 MRF7S27130HSR3 MRF7S35015HSR3 MRF7S35120HSR3 MRF7S38075HR3 MRF8P18265HR5 MRF8P18265HR6 MRF8P18265HSR5 MRF8P18265HSR6 MRF8P20160HR3 MRF8P20160HR5 MRF8P20160HSR3 MRF8P20160HSR5 MRF8P20161HSR3 MRF8P20161HSR5 MRF8P23080HR3 MRF8P23080HR5 MRF8P23080HSR3 MRF8P23080HSR5 MRF8P23160WHR3 MRF8P23160WHR5 MRF8P23160WHSR3 MRF8P23160WHSR5 MRF8P26080HR3 MRF8P26080HR5 MRF8P26080HSR3 MRF8P26080HSR5 MRF8P29300HR5 MRF8P29300HR5 MRF8P29300HR6 MRF8P29300HR6 MRF8P29300HSR5 MRF8P29300HSR5 MRF8P29300HSR6 MRF8P29300HSR6 MRF8P8300HR5 MRF8P8300HR6 MRF8P8300HSR5 MRF8P8300HSR6 MRF8P9040GNR1 Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale BLF574 BLF574XR BLF574XRS BLF578 BLF578XR BLF647PS BLF202 BLF242 BLF244 BLF145 BLF147 BLF175 BLF177 BLF647P BLF245 BLF245B BLF246 BLF878 BLF879P BLF884P BLF884PS BLF888 BLF248 BLF369 BLF571 BLF572XR BLF572XRS BLF573 BLF6G22-180PN BLF6G22-180RN BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G15L-40RN BLF6G20-40 BLF8G22LS-270GV BLF8G22LS-400PGV BLM7G22S-60PB BLF6G27-45 BLF6G27-75 BLS6G3135S-20 BLS7G3135L-350P BLF6G38-10 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF8G20LS-270GV BLF8G20LS-270PGV BLF7G20L-200 BLF7G20L-250P BLF8G20L-200V BLF8G20LS-200V BLM7G22S-60PBG BLD6G21L-50 BLD6G21LS-50 BLM6G22-30 BLM6G22-30G BLD6G22L-50 BLD6G22LS-50 BLF6G22L-40P BLF6G27L-40P BLF6G27L-50BN BLF6G27LS-100 BLF6G27LS-135 BLF7G27LS-140 BLS6G2731-120 BLF7G27LS-150P BLS6G2731-6G BLF7G27LS-90P BLS6G2731S-120 BLF7G27LS-90PG BLS6G2731S-130 BLF6G10LS-160RN BLF6G10LS-260PRN BLF6G10S-45 BLF6H10L-160 BLF6G10-45 Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station A&D A&D Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station A&D Base station A&D Base station A&D Base station A&D Base station Base station Base station Base station Base station MRF8P9040NBR1 MRF8P9040NR1 MRF8S18120HR3 MRF8S18120HR5 MRF8S18120HSR3 MRF8S18120HSR5 MRF8S18260HR5 MRF8S18260HR6 MRF8S18260HSR5 MRF8S18260HSR6 MRF8S23120HR3 MRF8S23120HR5 MRF8S23120HSR3 MRF8S23120HSR5 MRF8S26060HR3 MRF8S26060HSR5 MRF8S8260HR3 MRF8S8260HR5 MRF8S8260HSR3 MRF8S8260HSR5 MRF917 MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P9220HR3 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9125NBR1 MRFE6S9125NR1 MRFE6S9160HSR3 MRFE6S9205HSR3 MRFE6VP8600HR5 MRFE6VP8600HR6 MRFE6VP8600HSR5 MRFG35003ANT1 MS1078 MS1281 MS1336 MS1337 MS1504 MS1505 MS1506 MS2267 MS2272 MT4S200T MT4S200U MT4S34U MV2109G MW6S004NT1 MW6S004NT1 MW7IC008NT1 MW7IC2020NT1 MW7IC2425GNR1 MW7IC2425GNR1 MW7IC2425NBR1 MW7IC2425NBR1 MW7IC2425NR1 MW7IC2425NR1 MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1 MW7IC3825GNR1 MW7IC3825NBR1 MW7IC3825NR1 MW7IC915NT1 MWE6IC9100NBR1 NESG2021M05 NESG2031M05 NESG2101M05 Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Toshiba Toshiba ONSemicond. Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Renesas Electronics Renesas Electronics Renesas Electronics BLF6G10L-260PBM BLF6G10L-260PRN BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-230PRN BLF6G20S-45 BLF7G20LS-140P BLF7G20LS-260A BLF7G21L-160P BLF7G21LS-160 BLF6G22LS-40P BLF7G22L-200 BLF7G22L-250P BLF7G22LS-200 BLF7G27L-200PB BLF8G27LS-140V BLF8G10L-160V BLF8G10LS-160V BLF8G10LS-200GV BLF8G10LS-270GV BFQ67W BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BLF888A BLF578XRS BLF7G10LS-250 BLF8G10LS-300P BLF7G10L-250 BLF6H10LS-160 BLF8G10L-160 BLM6G10-30 BLM6G10-30G BLF888AS BLF888B BLF888BS BLU6H0410L-600P BLF145 BLF177 BLF175 BLF147 BLF248 BLF178XRS BLF178XR BLA1011-10 BLA6H0912-500 BFG424W BFG425W BFG410W BB182LX BLF6G21-10G BLF1043 BLF988 BLF7G21LS-160P BLF7G24L-160P BLF8G24L-200P BLF7G24LS-100 BLF8G24LS-200P BLF7G24LS-140 BLS7G2325L-105 BLF6G27LS-40P BLF6G27LS-50BN BLF6G27LS-75 BLF6G27S-45 BLF7G27L-100 BLF7G27L-140 BLF6G38-100 BLF6G38-10G BLF6G38-25 BLF6G10L-40BRN BLF8G10LS-160 BFU610F BFU630F BFU660F Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast A&D Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast A&D A&D WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 5-7 WB trs 5-7 WB trs 5-7 114 NXP Semiconductors RF Manual 16th edition Manufacturer NXPtype Product family Manufacturertype Manufacturer NXPtype Product family NESG2101M05 NESG2101M05 NESG3031M05 NESG3032M14 NJG1140KA1 PRF947B PRF947B PTF 080101S - 10 W PTF 081301E PTF 081301F PTF 140451E PTF 140451F PTF 141501E - 150 W PTFA 041501E PTFA 041501F PTFA 043002E - 300 W PTFA 043002E - 300 W PTFA 070601E - 60 W PTFA 070601F - 60 W PTFA 071701E - 170 W PTFA 071701F - 170 W PTFA 072401EL - 240 W PTFA 072401FL - 240 W PTFA 072401FL - 240 W PTFA 080551E - 55 W PTFA 080551F - 55 W PTFA 081501E - 150 W PTFA 081501F - 150 W PTFA 082201E - 220 W PTFA 082201F - 220 W PTFA 091201E - 120 W PTFA 091201F - 120 W PTFA 142401EL - 240 W PTFA 142401FL - 240 W PTFA 210601E - 60 W PTFA 210601F - 60 W PTFA 210701E - 70 W PTFA 210701F - 70 W PTFA 211801E - 180 W PTFA 211801F - 180 W PTFA 212001E - 200 W PTFA 212001F - 200 W PTFA 240451E - 45 W PTFA 241301E - 130 W PTFA 241301F - 130 W PTFA 260451E - 45 W PTFA 261301E - 130 W PTFA 261301F - 130 W PTFB 082817 FH - 250 W PTFB 082817 FH - 250 W PTFB 091507FH - 150 W PTFB 093608FV - 360 W PTFB 210801FA - 80 W PTFB 211501E - 150 W PTFB 211501F - 150 W PTFB 211503EL - 150 W PTFB 211503FL - 150 W PTFB 211803EL - 180 W PTFB 211803FL - 180 W PTFB 212503EL - 240 W PTFB 212503FL - 240 W PTFB 213004F - 300 W PTFB 241402F - 2x70W PTFB 241402F - 2x70W PTMA 080152M - 20 W PTMA 080302M - 30 W PTMA 080304M - 2 X 15 W PTMA 180402M - 40 W PTMA 210152M - 20 W PTMA 210452EL - 45 W PTMA 210452FL - 45 W R0605250L R0605250L R0605300L R0605300L R1005250L R2005200P12 Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics JRC Motorola Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon RFMD Standard Standard RFMD RFMD RFMD BFU760F BFU790F BFU730F BFU725F BGU7044 PRF947 PRF947 BLF8G10L-300P BLF8G10LS-300P BLF7G10L-250 BLF1046 BLF145 BLF147 BLF6G10LS-200RN BLF6G10-135RN BLF6G21-10G BLF1043 BLF6G10L-260PRN BLF6G10L-40BRN BLF6G10LS-135RN BLF6G10LS-160RN BLF6G10LS-260PRN BLF6G10S-45 BLF6H10L-160 BLF6H10LS-160 BLF8G10L-160 BLF8G10L-160V BLF8G10LS-160V BLF8G10LS-200GV BLF8G10LS-270GV BLM6G10-30 BLM6G10-30G BLF175 BLF177 BLF6G20-40 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-230PRN BLF6G27-75 BLF6G27L-40P BLF6G27L-50BN BLF6G27LS-100 BLF6G27LS-135 BLF6G27LS-40P BLF6G10L-260PBM BLF8G10LS-400PGV BLF7G10LS-250 BLF8G10LS-160 BLF6G20S-45 BLF7G20LS-140P BLF7G20LS-260A BLF7G21L-160P BLF7G21LS-160 BLF7G21LS-160P BLF8G20L-200V BLF8G20LS-200V BLF8G20LS-270GV BLF8G20LS-270PGV BLF7G24L-140 BLF6G27-45 BLF6G10-160RN BLF6G10-200RN BLF6G10-45 BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BGS67A BGY66B BGY68 BGY68 BGY66B BGY67 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 MMIC WB trs 1-4 WB trs 1-4 Base station Base station Base station Broadcast Broadcast Broadcast Base station Base station Base station Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA R2005240 R2005240 R2005240P12 R2005350L RF3826 RF3863 RF3863 RF3863 RF3928 RF3928B RF3931 RF3931 RF3932 RF3933 RF3934 RFFC2072 RFG1M09090 RFG1M09180 RFG1M20090 RFG1M20180 RFHA1000 RFHA1003 RFHA1006 RFHA3942 RN142G RN142S RN242CS RN731V RN739D RN739F S10040200P S10040220GT S10040220P S10040230GT S10040240P S10040280GT S10040340 S595T S595TR S595TRW S7540185 S7540215 S8740180GT S8740190 S8740190 S8740200P S8740220 S8740220GT S8740220P S8740230 S8740240GT S8740240P S8740240P12 S8740260GT S8740280GT S8740340 S8740340PT SD1013 SD1013-03 SD1014-06 SD1526-01 SDV701Q SDV704Q SDV705Q SGA8343Z SKY65048 SKY65066 SKY65084 SMA3101 SMA3101 SMA3103 SMA3103 SMA3107 SMA3107 SMA3109 SMA3109 SMA3111 Standard RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD Rohm Rohm Rohm Rohm Rohm Rohm RFMD RFMD RFMD RFMD RFMD RFMD RFMD Vishay Vishay Vishay Standard Standard RFMD Standard RFMD RFMD Standard RFMD RFMD Standard RFMD RFMD RFMD RFMD RFMD RFMD RFMD Microsemi Microsemi Microsemi Microsemi AUK AUK AUK Sirenza Skyworks Skyworks Skyworks Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo BGY67A BGY67A BGY67A BGR269 BLF7G24L-100 BGU7051 BGU7052 BGU7053 BLS7G2933S-150 BLS6G2933S-130 BLF6G38-10 BLS6G3135-120 BLF6G38-100 BLF6G38-10G BLF6G38-25 BGX721x BLF6G10-200RN BLF6G10-45 BLF6G20-110 BLF6G20-180PN BLF6G10-135RN BLF6G10LS-200RN BLF6G10-160RN BLS7G3135LS-350P BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W CGY1041 CGY1041 CGY1041 CGY1043 CGY1043 CGY1047 CGY1034 BF1105 BF1105R BF1105WR BGY785A BGY787 BGY885A BGD812 BGY885A BGY887 BGD814 BGY887 BGY887 BGD816L BGY887 BGY887 BGY887 CGY887A CGY887B CGY888C CGY888C BLF178P BLF174XRS BLF174XR BLA0912-250R BB179 BB178 BB182 BFG425W BGU7051 BGU7053 BGU7052 BGA2851 BGA2851 BGA2867 BGA2867 BGA2803 BGA2803 BGA2817 BGA2817 BGA2851 CATV RA CATV RA CATV RA CATV RA Base station MMIC MMIC MMIC A&D A&D Base station A&D Base station Base station Base station MMIC Base station Base station Base station Base station Base station Base station Base station A&D PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP FET FET FET CATV PPA CATV PPA CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP Broadcast Broadcast Broadcast A&D Varicap Varicap Varicap WB trs 5-7 MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC NXP Semiconductors RF Manual 16th edition 115 Cross-references &replacements Manufacturertype Manufacturertype Manufacturer NXPtype Product family SMA3111 SMA3113 SMA3113 SMA3117 SMA3117 SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 SST4857 SST4859 SST4860 SST4861 SVC201SPA SXA-389B SXA-389B SXA-389B SXA-389B SXB-4089 SXB-4089 T1G4005528-FS T1G4005528-FS T1G4005528-FS T1L2003028-SP T1P2701012-SP TAN150 TAN250A TAN300 TAN350 TAN75A TBB1016 TMF3201J TMF3202Z TMPF4091 TMPF4092 TMPF4093 Sanyo Sanyo Sanyo Sanyo Sanyo Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Sanyo RFMD RFMD RFMD RFMD RFMD RFMD Triquint Triquint Triquint Triquint Triquint Microsemi Microsemi Microsemi Microsemi Microsemi Renesas Electronics AUK AUK Standard Standard Standard BGA2851 BGA2869 BGA2869 BGA2869 BGA2869 BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR56 BSR57 BSR58 BB187 BGA7024 BGA7124 BGA7124 BGA7204 BGA7027 BGA7127 BLF6G38-25 BLS6G3135-120 BLS6G3135-20 BLL6H0514L-130 BLS6G2731-120 BLS7G2325L-105 BLL6H1214LS-500 BLL6H1214LS-250 BLL6H1214L-250 BLL6H1214-500 BF1204 BF1204 BF1202WR PMBF4391 PMBF4392 PMBF4393 MMIC MMIC MMIC MMIC MMIC PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Varicap MMIC MMIC MMIC MMIC MMIC MMIC Base station A&D A&D A&D A&D A&D A&D A&D A&D A&D FET FET FET FET FET FET 116 NXP Semiconductors RF Manual 16th edition Manufacturertype Manufacturer NXPtype Product family TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TPR400 TPR400 TPR400A TPR500 TPR500A TPR700 TRF370315 TRF370417 TRF3705 TSDF54040 TSDF54040-GS08 TSDF54040X-GS08 TSDF54040XR-GS08 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC3224 uPC3224 uPC3226 uPC3226 uPC3227 uPC3227 uPC3232 uPC3232 uPC3240 uPC3240 uPC3241 uPC3241 uPC8112 UPC8230TU UPC8236T6N uPD5740T6N uPD5756T6N UTV005 UTV005P UTV010 UTV020 UTV040 UTV080 UTV120 UTV200 UTV8100B Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi TI TI TI Vishay Vishay Vishay Vishay Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Renesas Electronics Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BLA1011-2 BLA1011-200 BLA6G1011-200R BLL1214-250 BLA6H1011-600 BLA6G1011LS-200RG BGX710x BGX710x BGX710x BF1102 BF1102 BF1102 BF1102R BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2851 BGA2851 BGA2867 BGA2867 BGA2851 BGA2851 BGA2869 BGA2869 BGA2802 BGA2802 BGA2817 BGA2817 BGA2022 BGU7007 BGU8007 BGU7045 BGU7045 BLF888B BLF888AS BLF888A BLF888 BLF884PS BLF884P BLF879P BLF878 BLF861A FET FET FET FET FET FET FET FET FET FET FET FET FET A&D A&D A&D A&D A&D A&D MMIC MMIC MMIC FET FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast 5.2 Cross-references: NXP discontinued types versus NXP replacement types In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band switch diode CATV Community antenna television system FET Field effect transistor Varicap Varicap diode WB trs Wideband transistor RFP trs RF Power transistor ProductfamilyNXP ReplacementtypeNXP NXPdiscontinuedtype ProductfamilyNXP ReplacementtypeNXP BA277-01 BS diode BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET WB trs WB trs FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs BA277 BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181 BB182 BB182 BB187LX BB149 BB202 BB207 BBY40 BF1211 BF1211R BF1211WR BF1203 BF1210 BF1210 BF1208 BF545A BF545B BF545C BFS17 BFS17 BF861A BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93 BFR93AT BFR93R BFU510 BFU540 BFU725F BGA2031 BGD502 BGD602D BGD702 BGD702D BGD702D/08 BGD702N BGD704 BGD704N BGD802 BGD802N BGD802N/07 BGD804 BGD804N BGD804N/02 BGD902 BGD902L BGD904 BGD904L BGD906 BGE788 BGE847BO/FC BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO807C BGO807CE BGO827 BGO827/SCO BGO847/FC0 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY585A BGY587 BGY587B BGY588N WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs WB trs CATV CATV CATV CATV CATV CATV BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A BFR93AW BFR93A BFU725F/N1 BFU725F/N1 BFU725F/N1 BGA2031/1 BGD712 BGD712 BGD712 BGD712 BGD712 BGD712 BGD714 BGD714 BGD812 BGD812 BGD812 BGD814 BGD814 BGD814 BGD812 BGD812 BGD814 BGD814 CGD942C BGE788C BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO807C/FCO BGO807CE/SCO BGO807CE/FCO BGO807CE/SCO BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY785A BGY787 BGE787B BGY588C BA278 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181LX BB182B BB182LX BB187L BB190 BB202LX BB804 BBY42 BF1101 BF1101R BF1101WR BF1203 BF1205 BF1205C BF1206F BF245A BF245B BF245C BF689K BF763 BF851A BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A NXP Semiconductors RF Manual 16th edition Cross-references &replacements NXPdiscontinuedtype 117 NXPdiscontinuedtype ProductfamilyNXP ReplacementtypeNXP NXPdiscontinuedtype ProductfamilyNXP ReplacementtypeNXP BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A BGY685AD BGY685AL BGY687 BGY687B BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO/SC BGY883 BGY887/02 BGY887BO/SC BLC6G22-100 BLC6G22-100 BLF1822-10 BLF2043 BLF2045 BLF3G22-30 BLF4G08LS-160A BLF4G08LS-160A BLF6G10-135RN BLF6G10-160RN BLF6G10-160RNL BLF6G20-180RN BLF6G20-40 BLF6G20S-230PRN BLF6G22-180RN CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY785A BGY785A BGY785A BGY787 BGE787B BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY787 BGY787 BGY787 BGO827/SC0 BGY885A BGY887 BGO827/SC0 BLF6G22-100 BLF6G22LS-100 BLF6G21-10G BLF6G21-10G BLF6G20-45BLF6G22-45 BLF6G22-45 BLF6G10LS-160RN BLF6G10LS-160RN BLF6G10LS-135RN BLF6G10LS-160RN BLF6G10-200RN BLF7G20LS-200 BLF6G20-45 BLF7G20LS-250P BLF7G22LS-200 BLF6G22LS-180PN BLF6G22LS-75 BLF6G27-10 BLF6G27-10 BLF6G27-135 BLF6G27LS-135 BLF6G27LS-135 BLF6G27LS-75S BLF6G27LS-75S BLF6G38-10 BLF6G38-10 BLS2731-110 BLS2731-110T BLS2731-20 BLS2731-50 CGD1042 CGD1044 CGD914 CGY887A CGY887B GD923 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 OM7650 OM7670 ON4831-2 ON4876 ON4890 ON4990 PMBT3640/AT PN4392 PN4393 TFF1004HN RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs CATV CATV CATV CATV CATV CATV FET FET FET FET FET FET FET FET FET FET CATV CATV CATV CATV CATV CATV WB trs FET FET Satellite IC BLF7G22LS-200 BLF7G22LS-100 BLF6G27-10G BLF6G27-10G BLF7G27L-135 BLF7G27LS-140 BLF7G27LS-140 BLF6G27LS-75 BLF6G27LS-75 BLF6G38-10G BLF6G38-10G BLS6G2731-120 BLS6G2731-120 BLS6G2731-6G BLS6G2731-6G CGD1042H CGD1044H CGD1042H CGY1043 CGY1047 CGD942C PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGY588C BGE788C BGY885A BGY1085A BGD712 BGD885 BFS17 PMBF4392 PMBF4393 TFF1014HN 118 NXP Semiconductors RF Manual 16th edition 6. Packing and packaging information Packingquantitiesperpackagewithrelevantorderingcode Package Package dimensions L x W x H (mm) Packing quantity Product 12NC ending Packing method SOD323/SC-76 1.7x1.25x0.9 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOD523/SC-79 1.2x0.8x0.6 3,000 10,000 8,000 20,000 115 135 315 335 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel SOD882D 1.0x0.6x0.4 10,000 315 reel SOT23 2.9x1.3x0.9 3,000 10,000 215 235 8 mm tape and reel 8 mm tape and reel SOT54 4.6x3.9x5.1 5,000 5,000 10,000 10,000 112 412 116 126 bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch SOT89/SC-62 4.5x2.5x1.5 1,000 4,000 115 135 12 mm tape and reel 12 mm tape and reel SOT115 44.5x13.65x20.4 100 112 4 tray/box SOT143(N/R) 2.9x1.3x0.9 3,000 10,000 215 235 8 mm tape and reel 8 mm tape and reel SOT223/SC-73 6.7x3.5x1.6 1,000 4,000 115 135 12 mm tape and reel 12 mm tape and reel SOT307 10x10x1.75 1,500 96 480 518 551 557 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack SOT323/SC-70 2.0x1.25x0.9 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT341 5.3x10.2x2.0 1,000 658 118 112 13" tape and reel tube SOT343(N/R) 2.0x1.25x0.9 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT343F 2.1x1.25x0.7 3,000 115 8 mm tape and reel SOT360 6.5x4.4x0.9 2,500 118 16 mm tape and reel SOT363/SC-88 2.0x1.25x0.9 3,000 10,000 115 135 8 mm tape and reel 8 mm tape and reel SOT401 5x5x1.4 2,000 360 118 151 13" tape and reel 1 tray SOT403 5.0x4.4x0.9 2,500 118 12 mm tape and reel SOT416/SC-75 1.6x0.8x0.75 3,000 115 8 mm tape and reel SOT467B 9.78x18.29x4.67 60 20 112 112 blister, tray blister, tray SOT467C 20.45x18.54x4.67 60 20 112 112 blister, tray blister, tray SOT502A 19.8x9.4x4.1 60 300 112 135 blister, tray reel NXP Semiconductors RF Manual 16th edition Packing and packaging information 6.1 119 83 T8 SO 120 Package Package dimensions L x W x H (mm) Packing quantity Product 12NC ending Packing method SOT502B 19.8x9.4x4.1 60 100 112 118 blister, tray reel SOT538A 5.1x4.1x2.6 160 112 blister, tray SOT539A 31.25x9.4x4.65 60 300 112 135 blister, tray reel SOT540A 21.85x10.2x5.4 60 112 blister, tray SOT608A 10.1x10.1x4.2 60 60 300 112 112 135 blister, tray blister, tray reel SOT608B 10.1x10.1x4.2 60 100 300 112 118 135 blister, tray reel reel SOT616 4.0x4.0x0.85 6,000 1,500 100 118 115 551 12 mm tape and reel 8 mm tape and reel tray SOT617 5x5x0.85 6,000 118 tape and reel SOT618 6x6x0.85 4,000 1,000 490 2,450 118 515 551 157 13" tape and reel 7" tape and reel dry pack 1 tray dry pack 5 tray SOT638 14x14x1 1,000 90 450 518 551 557 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack SOT650-1 3.0x3.0x0.85 6,000 118 reel SOT666 1.6x1.2x0.7 4,000 115 8 mm tape and reel SOT684 8x8x0.85 1,000 260 260 1,300 518 151 551 157 13" tape and reel dry pack 1 tray 1 tray dry pack 5 tray dry pack SOT724 8.7x3.9x1.47 2,500 118 16 mm tape and reel SOT753 2.9x1.5x1.0 3,000 125 8 mm tape and reel SOT763-1 2.5x3.5x0.85 3,000 6,000 115 135 reel SOT778 6.0x6.0x0.85 490 4,000 551 518 tray multiple trays SOT822-1 15.9x11x3.6 180 127 tube SOT834-1 15.9x11x3.15 180 127 tube SOT883 1.0x0.6x0.5 3,000 115 8 mm tape and reel SOT886 1.45x1.0x0.5 5,000 115 8 mm tape and reel SOT891 1.0x1.0x0.5 5,000 132 8 mm tape and reel SOT908 3.0x3.0x0.85 6,000 118 12 mm tape and reel SOT922-1 17.4x9.4x3.88 60 112 blister, tray SOT975B 6.5x6.5x3.3 180 100 112 118 blister, tray tape and reel SOT975C 6.5x6.5x3.3 180 100 112 118 blister, tray tape and reel SOT979A 31.25x10.2x5.3 60 112 blister, tray SOT1110A 41.28x17.12x5.36 60 100 112 118 blister, tray reel SOT1110B 41.15x36.32x4.68 60 112 blister, tray NXP Semiconductors RF Manual 16th edition Package dimensions L x W x H (mm) Packing quantity Product 12NC ending Packing method SOT1112A 16.65x20.32x4.205 60 100 112 118 blister, tray reel SOT1112B 16.65x15.22x4.205 60 100 112 118 blister, tray reel SOT1120A 9.4x19.815x4.1 60 100 112 118 blister, tray reel SOT1120B 9.4x19.815x4.1 60 100 112 118 blister, tray reel SOT1121A 34.16x19.94x4.75 60 100 112 118 blister, tray reel SOT1121B 20.70x19.94x4.75 60 100 112 118 blister,tray reel SOT1121C 13.4x20.575x3.785 DEV DEV DEV SOT1130A 20.45x17.12x4.65 60 112 blister, tray SOT1130B 9.91x17.12x4.65 60 112 blister, tray SOT1135A 20.45x19.94x4.65 60 100 112 118 blister, tray reel SOT1135B 16.65x9.78x4.205 60 100 112 118 blister, tray reel SOT1135C 16.65x9.78x4.205 60 100 112 118 blister, tray reel SOT1138 19.48x20.57x3.9 DEV DEV DEV SOT1179 4.0x6.0x0.85 DEV DEV DEV SOT1198-1 10.0x5.5x0.8 1000 115 reel SOT1204 13.2x20.57x3.9 DEV DEV DEV SOT1209 2x1.3x0.35 5000 147 8 mm tape and reel SOT1240B 21.60x20.575x3.875 DEV DEV DEV SOT1240C 18.00x20.575x3.875 DEV DEV DEV SOT1242B 22.60x32.45x4.455 DEV DEV DEV SOT1242C 18.00x32.45x4.455 DEV DEV DEV SOT1244B 19.43x20.575x3.875 DEV DEV DEV SOT1244C 18.00x20.575x3.875 DEV DEV DEV Packing and packaging information N6 SO HX Package NXP Semiconductors RF Manual 16th edition 121 6.2 Markingcodes Ingeneral,devicemarkingincludesthepartnumber,somemanufacturinginformationandtheNXPlogo.Ifpackages aretoosmallforthefull-lengthpartnumberashorter,codedpartnumber–markingcode–isused(where%=placeholder formanufacturingsitecode).Thefull-lengthpartnumberisalwaysprintedonthepackinglabelontheboxorbulk-packin whichthedevicesaresupplied. p =madeinHongKong t =madeinMalaysia W =madeinChina Marking code 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 35% 36% 38% 39% 40% 41% 42% 47% 48% 49% 50% 1 2 2 4 4 7 7 8 8 9 9 %1V %1W %6G %6J %6K %6N %6S %6W %6X %6Y %7N %8N %AB %BG %E7 %E8 %E9 %EA %EB %EC %ED %M1 %M2 %M3 %M4 122 Final product BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A ON4288 ON4690 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA277 BB182 BB182/L BB189 BB189/L BA891 BA891/L BB178 BB178/L BB179 BB179/L BFR93AW/DG BAP51-05W PMBF4393 PMBF4391 PMBF4392 ON5088 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 ON5087 ON5089 BF1210 PMBFJ177/DG BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BF908 BF908R BF909 BF909R Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOT323 SOT323 SOT23 SOT23 SOT23 SOT343 SOT23 SOT23 SOT23 SOT23 SOT343 SOT343 SOT363 SOT23 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT143 SOT143 SOT143 SOT143 NXP Semiconductors RF Manual 16th edition Marking code %M5 %M6 %M7 %M8 %M9 %M9 %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MM %MN %MP %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ %VA %VB LE L4 LC L3 1A 1B 1B% 1C 1C% 1N% 2A% 2E 2L 2N 4A 4K% 4L% 4W% 5K% 5W% 6F% 6K% 6W% 7K% 8K% A1 A1 A1 A1 A2 Final product BF909A BF909AR BF904A BF904AR BSS83 ON4906 BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X ON4832 BFG590/X BFG520/XR ON4973 BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BGU7041 BGU7042 BAP64LX BB179LX BAP55LX BB178LX BGU6101 BGU6102 BGA2717 BGU6104 BAP50-05 BAP70-04W BF862 PRF949/DG BF1208 BF1206F BF1208D BAP64-04 BAP50-04 BAP64-04W BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BAP65-05 BAP70-05 BA591 BB208-02 BGA2001 BAP64Q BB208-03 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOD882D SOD882D SOD882D SOD882D SOT1209 SOT1209 SOT363 SOT1209 SOT23 SOT323 SOT23 SOT416 SOT666 SOT666 SOT666 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOD323 SOD523 SOT343 SOT753 SOD323 Marking code A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7% A8 A8% A8% A9 AC B3 B5% B6 B6% B7 B7% B7% B7% BA% BCp C C1% C2% C4% C5% CL D1 D2 D2 D3 D3 D4 D5 D6 D7 D8 E1% E1% E1% E1% E2% E2% E2% E3% E6 FB FF FG G2 G2% G3% G4% G5% K1 K2 Final product BB184 BGA2002 BAP70Q BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGU7005 BGU7003 BSR12 BGU7007 BGA2715 BGU7008 BF862/B BFU725F/N1 BGA2716 BGA2714 BFQ591 BB179B BGM1011 BGM1012 BGM1013 BGM1014 BAP70-03/DG BFU610F BAP63-03 BFU630F BAP65-03 BFU660F BFU690F BFU710F BFU730F BFU760F BFU790F BFS17 BFS17/FD ON4438 BFS17W BFS17A ON5023 BGA2712 BGA2709 BAP55L BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W Package SOD523 SOT343 SOT753 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343 SOD323 SOT343 SOT363 SOD323 SOT886 SOT891 SOT23 SOT886 SOT363 SOT886 SOT23 SOT343 SOT363 SOT363 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD323 SOT343 SOD323 SOT343 SOD323 SOT343 SOT343 SOT343 SOT343 SOT343 SOT343 SOT23 SOT23 SOT23 SOT323 SOT23 SOT23 SOT363 SOT363 SOD882 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 Final product BAP50-02 BAP63-02 BAP65-02 BAP1321-02 BAP70-02 BB199 BB202LX BB202 BAP51LX BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX BA792 BB187LX BF1208 BF1201WR BF1201 BAP50LX BF1201R PBR941B BAP55LX BAP63LX BF1202 BF1202/L BAP64LX BF1202WR BF1202WR/L BF1202R BAP65LX BF1211 BAP142LX BF1212 BAP1321LX BF1211R BGU7044 BF1212R BGU7045 BGA2867 BGA2874 BGA2817 BFR30 BFR31 BF1207 BF908 BF908R BF909 BF909R BFT46 BF909A BF909AR BF1215 BSR56 BF904A BF904AR BSR57 BF1216 BF1100 BF1100R BSR58 BF1205C BF1218 BSS83 ON4906 BF991 BF992 BGA2802 BF998WR BGA2803 BF904WR BGA2851 BF908WR BF909WR BF1100WR BF909AWR BF994S Package SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD882T SOD523 SOD882T SOT363 SOD882T SOT363 SOD882T SOT363 SOD882T SOD882T SOT363 SOD882T SOD110 SOD882T SOT363 SOT343 SOT143 SOD882T SOT143 SOT23 SOD882T SOD882T SOT143 SOT143 SOD882T SOT343 SOT343 SOT143 SOD882T SOT143 SOD882T SOT143 SOD882T SOT143 SOT363 SOT143 SOT363 SOT363 SOT363 SOT363 SOT23 SOT23 SOT363 SOT143 SOT143 SOT143 SOT143 SOT23 SOT143 SOT143 SOT363 SOT23 SOT143 SOT143 SOT23 SOT363 SOT143 SOT143 SOT23 SOT363 SOT363 SOT143 SOT143 SOT143 SOT143 SOT363 SOT343 SOT363 SOT343 SOT363 SOT343 SOT343 SOT343 SOT343 SOT143 Marking code MH MH% MK ML ML MO% MO% MO4 MO6 N N0 N0% N0% N2 N2% N2% N3 N33 N36 N37 N38 N39 N4 N4 N4% N42 N43 N43 N44 N48 N49 N6% N7 N70 N71 N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NG% NH% NL% 33* P1 P1 P2% P2% P2% P3 p3A P4 p4A P5 P5 p5A P6 p6K p6L P8 P9 PB PC PF PL R2% R2% R5% R7% R8% S Final product BF904AWR BF996S BF1211WR BF1212WR BF1212WR/L BF998 BF998R BF904 BF904R BB181 BFR505T BFS505 BFM505 BFR520T BFS520 BFM520 BFG520W BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520W/X BFQ540 BFS540 BFG520/X BFG540/X ON4832 BFG590/X BFG520/XR BFG540/XR BFS25A BFG540W/X BFG10 BFG10/X BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108/L BF1108R BFR94A BFR540 BB131 BFG21W BFR92A ON4640 BFR92AW BFG403W BGA6289 BFG410W BGA6489 BB135 BFG425W BGA6589 BFG480W BGA7024 BGA7027 BB148 BB149 BB152 BB153 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 Package SOT343 SOT143 SOT343 SOT343 SOT343 SOT143 SOT143 SOT143 SOT143 SOD523 SOT416 SOT323 SOT363 SOT416 SOT323 SOT363 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT343 SOT89 SOT323 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT323 SOT343 SOT143 SOT143 SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT143 SOD323 SOT343 SOT23 SOT23 SOT323 SOT343 SOT89 SOT343 SOT89 SOD323 SOT343 SOT89 SOT343 SOT89 SOT89 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 Marking code S1% S2% S2% S3% S6% S7% S8% S9% SB% SB% SC% SC% SD% SE% T5 TA% TB% UW UY UZ V0% V0% V1 V1% V11 V12 V14 V15 V2% V2% V2% V3% V4% V6% V8 VA VB VC VC% VD% W1 W1% W1% W2% W2% W2% W4% W6% W7% W9% X X X1% X1% XG% YC% Z ZA% ZC ZD ZE ZF ZK% ZX% Final product BFG310/XR BFG325/XR BBY40 BF1107 BF510 BF511 BF512 BF513 BF1214 BF1214/L BB201 BGU7031 BGU7032 BGU7033 BFG10W/X BGA2818 BGA2819 BGU7003W BGU7004 BGU8007 PBR941 PRF947 BFG25AW/X BFT25 BFG25A/X BFG67/X BFG92A/X BFG93A/X BFQ67 ON5042 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1217WR BF1118W BF1118WR BF1118 BF1118R BF1102 BFT92 BFT92W PBR951 PRF957 BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BB187/L BFT93 BFT93W BFR94AW BGA2870 BB145B BFU668F BFU710LX BFU730LX BFU760LX BFU790LX ON5052 BGA2022/C Package SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT23 SOT363 SOT363 SOT363 SOT343 SOT363 SOT363 SOT886 SOT886 SOT886 SOT23 SOT323 SOT343 SOT23 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT343 SOT343 SOT343 SOT143 SOT143 SOT363 SOT23 SOT323 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOD523 SOT23 SOT323 SOT323 SOT363 SOD523 SOT343 SOT883 SOT883 SOT883 SOT883 SOT23 SOT363 NXP Semiconductors RF Manual 16th edition Packing and packaging information Marking code K4 K5 K6 K7 K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 L8 L8 L9% LA LA% LB LB% LB% LC LD LD% LD% LE LE LE LE% LF LF% LG LG% LH LH% LJ% LK% LK% LP% LR% LS% M1% M2% M2% M26 M27 M28 M29 M3% M33 M34 M4% M4% M41 M42 M5% M5% M56 M57 M6% M6% M7% M74 M74 M91 M92 MA% MB MB% MC MC% MD ME MF MG MG% 123 7. Abbreviations 3-way AM ASIC ASYM BPF BUC CATV CDMA CMMB CMOS CQS DAB DECT DiSEqC DSB DVB EDGE ESD FET FM GaAs GaN Gen GPS GSM HBT HDTV HF HFC HFET HPA HVQFN Abbreviations IF ISM LDMOS LNA LNB LO LPF MESFET MMIC MMPP 124 Doherty design using 3 discrete transistors Amplitude Modulation Application Specific Integrated Circuit Asymmetrical design of Doherty (main and peak device are different) Band Pass Filter Block Upconverter Community Antenna Television Code Division Multiple Access Chinese Multimedia Mobile Broadcasting Complementary Metal Oxide Semiconductor Customer Qualification Samples Digital Audio Broadcasting Digital Enhanced Cordless Telecommunications Digital Satellite Equipment Control Digital Signal Processor Digital Video Broadcasting Enhanced Data Rates for GSM Evolution Electro Static Device Field Effect Transistor Frequency Modulation Gallium Arsenide Gallium Nitride Generation Global Positioning System Global System for Mobile communications Heterojunction Bipolar Transistor High Definition Television High Frequency (3-30 MHz) Hybrid Fiber Coax Heterostructure Field Effect Transistor High Power Amplifier Plastic thermally enHanced Very thin Quad Flat pack No leads Intermediate Frequency Industrial, Scientific, Medical - reserved frequency bands Laterally Diffused Metal-Oxide-Semiconductor Low Noise Amplifier Low Noise Block Local Oscillator Low Pass Filter Metal Semiconductor Field Effect Transistor Monolithic Microwave Integrated Circuit Main and peak devices realized separately in halves of push-pull transistor NXP Semiconductors RF Manual 16th edition MPPM Main and peak device realized in same pushpull transistor (2 times) MoCA Multimedia over Coax Alliance MOSFET Metal–Oxide–Semiconductor Field Effect Transistor MPA Medium Power Amplifier MRI Magnetic Resonance Imaging NF Noise Figure NIM Network Interface Module NMR Nuclear Magnetic Resonance PA Power Amplifier PAR Peak to Average Ratio PEP Peak Envelope Power pHEMT pseudomorphic High Electron Mobility Transistor PLL Phase Locked Loop QUBiC Quality BiCMOS RF Radio Frequency RFS Release for Supply RoHS Restriction of Hazardous Substances Rx Receive SARFT State Administration for Radio, Film and Television SER Serializer SiGe:C Sillicon Germanium Carbon SMATV Satellite Master Antenna Television SMD Surface Mounted Device SPDT Single Pole, Double Throw SYM Symmetrical design of Doherty (main and peak device are the same type of transistor) TD-SCDMA Time Division-Synchronous Code Division Multiple Access TCAS Traffic Collision Avoidance Systems TMA Tower Mounted Amplifier TTFF Time to First Fix Tx Transmit UHF Ultra High Frequency (470-860 MHz) UMTS Universal Mobile Telecommunications System VCO Voltage Controlled Oscillator VGA Variable Gain Amplifier VHF Very High Frequency (30-300 MHz) VoIP Voice over Internet Protocol VSAT Very Small Aperture Terminal WCDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network 8. Contactsandweblinks How to contact your authorized distributor or local NXP representative. Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist Local NXP offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP RF power & base stations: http://www.nxp.com/rfpower NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/technical-support-portal/50812/50961 NXP cross-references: http://www.nxp.com Web links NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF schottky diodes: http://www.nxp.com/rfschottkydiodes NXP packaging: http://www.nxp.com/package NXP end-of-life: http://www.nxp.com/products/eol NXP quality handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP sales offices and distributors: http://www.nxp.com/profile/sales Contacts andweblinks NXP Semiconductors: http://www.nxp.com NXP Semiconductors RF Manual 16th edition 125 9. Productindex Type Portfolio chapter Type Portfolio chapter Type Portfolio chapter 1PS10SB82 3.2.4 BAP70Q 3.2.2 BF1208D 3.5.2 BFG325W/XR 3.3.1 1PS66SB17 3.2.4 BAT17 3.2.4 BF1210 3.5.2 BFG35 3.3.1 1PS66SB82 3.2.4 BAT18 3.2.3 BF1211 3.5.2 BFG403W 3.3.1 1PS70SB82 3.2.4 BB131 3.2.1 BF1211R 3.5.2 BFG410W 3.3.1 1PS70SB84 3.2.4 BB135 3.2.1 BF1211WR 3.5.2 BFG424F 3.3.1 1PS70SB85 3.2.4 BB145B 3.2.1 BF1212 3.5.2 BFG424W 3.3.1 1PS70SB86 3.2.4 BB148 3.2.1 BF1212R 3.5.2 BFG425W 3.3.1 1PS76SB17 3.2.4 BB149 3.2.1 BF1212WR 3.5.2 BFG480W 3.3.1 1PS79SB17 3.2.4 BB149A 3.2.1 BF1214 3.5.2 BFG505 3.3.1 1PS88SB82 3.2.4 BB152 3.2.1 BF1215 3.5.2 BFG505/X 3.3.1 BA277 3.2.3 BB153 3.2.1 BF1216 3.5.2 BFG505W 3.3.1 BA591 3.2.3 BB156 3.2.1 BF1217 3.5.2 BFG505W/X 3.3.1 BA891 3.2.3 BB178 3.2.1 BF1218 3.5.2 BFG505W/XR 3.3.1 BAP1321-02 3.2.2 BB178LX 3.2.1 BF510 3.5.1 BFG520 3.3.1 BAP1321-03 3.2.2 BB179 3.2.1 BF511 3.5.1 BFG520/X 3.3.1 BAP1321-04 3.2.2 BB179B 3.2.1 BF512 3.5.1 BFG520/XR 3.3.1 BAP1321LX 3.2.2 BB179BLX 3.2.1 BF513 3.5.1 BFG520W 3.3.1 BAP142LX 3.2.2 BB179LX 3.2.1 BF545A 3.5.1 BFG520W/X 3.3.1 BAP50-02 3.2.2 BB181 3.2.1 BF545B 3.5.1 BFG540 3.3.1 BAP50-03 3.2.2 BB182 3.2.1 BF545C 3.5.1 BFG540/X 3.3.1 BAP50-04 3.2.2 BB184 3.2.1 BF556A 3.5.1 BFG540/XR 3.3.1 BAP50-04W 3.2.2 BB187 3.2.1 BF556B 3.5.1 BFG540W 3.3.1 BAP50-05 3.2.2 BB187LX 3.2.1 BF556C 3.5.1 BFG540W/X 3.3.1 BAP50-05W 3.2.2 BB189 3.2.1 BF861A 3.5.1 BFG540W/XR 3.3.1 BAP50LX 3.2.2 BB198 3.2.1 BF861B 3.5.1 BFG541 3.3.1 BAP51-02 3.2.2 BB199 3.2.1 BF861C 3.5.1 BFG590 3.3.1 BAP51-03 3.2.2 BB201 3.2.1 BF862 3.5.1 BFG590/X 3.3.1 BAP51-04W 3.2.2 BB202 3.2.1 BF904A 3.5.2 BFG591 3.3.1 BAP51-05W 3.2.2 BB207 3.2.1 BF904AR 3.5.2 BFG67 3.3.1 BAP51-06W 3.2.2 BB208-02 3.2.1 BF904AWR 3.5.2 BFG67/X 3.3.1 BAP51LX 3.2.2 BB208-03 3.2.1 BF908 3.5.2 BFG92A/X 3.3.1 BAP55LX 3.2.2 BBY40 3.2.1 BF908R 3.5.2 BFG93A 3.3.1 BAP63-02 3.2.2 BF1102(R) 3.5.2 BF908WR 3.5.2 BFG93A/X 3.3.1 BAP63-03 3.2.2 BF1105 3.5.2 BF909A 3.5.2 BFG94 3.3.1 BAP63-05W 3.2.2 BF1105R 3.5.2 BF909AR 3.5.2 BFG97 3.3.1 BAP63LX 3.2.2 BF1105WR 3.5.2 BF909AWR 3.5.2 BFM505 3.3.1 BAP64-02 3.2.2 BF1107 3.5.2 BF991 3.5.2 BFM520 3.3.1 BAP64-03 3.2.2 BF1108 3.5.2 BF992 3.5.2 BFM540 3.3.1 BAP64-04 3.2.2 BF1108R 3.5.2 BF994S 3.5.2 BFQ149 3.3.1 BAP64-04W 3.2.2 BF1108W 3.5.2 BF996S 3.5.2 BFQ18A 3.3.1 BAP64-05 3.2.2 BF1108WR 3.5.2 BF998 3.5.2 BFQ19 3.3.1 BAP64-05W 3.2.2 BF1118 3.5.2 BF998R 3.5.2 BFQ591 3.3.1 BAP64-06 3.2.2 BF1118R 3.5.2 BF998WR 3.5.2 BFQ67 3.3.1 BAP64-06W 3.2.2 BF1118W 3.5.2 BFG10 3.3.1 BFQ67W 3.3.1 BAP64LX 3.2.2 BF1118WR 3.5.2 BFG10/X 3.3.1 BFR106 3.3.1 BAP64Q 3.2.2 BF1201 3.5.2 BFG10W/X 3.3.1 BFR30 3.5.1 BAP65-02 3.2.2 BF1201R 3.5.2 BFG135 3.3.1 BFR31 3.5.1 BAP65-03 3.2.2 BF1201WR 3.5.2 BFG198 3.3.1 BFR505 3.3.1 BAP65-05 3.2.2 BF1202 3.5.2 BFG21W 3.3.1 BFR505T 3.3.1 BAP65-05W 3.2.2 BF1202R 3.5.2 BFG25A/X 3.3.1 BFR520 3.3.1 BAP65LX 3.2.2 BF1202WR 3.5.2 BFG25AW 3.3.1 BFR520T 3.3.1 BAP70-02 3.2.2 BF1203 3.5.2 BFG25AW/X 3.3.1 BFR540 3.3.1 BAP70-03 3.2.2 BF1204 3.5.2 BFG31 3.3.1 BFR92A 3.3.1 BAP70-04W 3.2.2 BF1206 3.5.2 BFG310/XR 3.3.1 BFR92AW 3.3.1 BAP70-05 3.2.2 BF1207 3.5.2 BFG310W/XR 3.3.1 BFR93A 3.3.1 BAP70AM 3.2.2 BF1208 3.5.2 BFG325/XR 3.3.1 BFR93AR 3.3.1 126 NXP Semiconductors RF Manual 16th edition Productindex Portfolio chapter Type Portfolio chapter Type Portfolio chapter Type Portfolio chapter Type Portfolio chapter BFR93AW 3.3.1 BGA6102 3.4.1 BGX7300 3.4.2 BLF6G20S-230PRN 3.7.1.3 BFR94A 3.3.1 BGA6104 3.4.1 BGX885N 3.6.1 BLF6G21-10G 3.7.1.2 BFR94AW 3.3.1 BGA6289 3.4.1 BGY588C 3.6.1 BLF6G22(LS)-180PN 3.7.1.4 BFS17 3.3.1 BGA6489 3.4.1 BGY66B 3.6.5 BLF6G22(LS)-180RN 3.7.1.4 BFS17A 3.3.1 BGA6589 3.4.1 BGY67 3.6.5 BLF6G22(S)-45 3.7.1.4 BFS17W 3.3.1 BGA7014 3.4.1 BGY67A 3.6.5 BLF6G22L-40BN 3.7.1.4 BFS25A 3.3.1 BGA7017 3.4.1 BGY68 3.6.5 BLF6G22L(S)-40P 3.7.1.4 BFS505 3.3.1 BGA7020 3.4.1 BGY785A 3.6.1 BLF6G22LS-100 3.7.1.4 BFS520 3.3.1 BGA7024 3.4.1 BGY787 3.6.1 BLF6G22LS-130 3.7.1.4 BFS540 3.3.1 BGA7027 3.4.1 BGY835C 3.6.1 BLF6G22LS-75 3.7.1.4 BFT25 3.3.1 BGA7124 3.4.1 BGY885A 3.6.1 BLF6G27-10(G) 3.7.1.5 BFT25A 3.3.1 BGA7127 3.4.1 BGY887 3.6.1 BLF6G27(LS)-100 3.7.1.6 BFT46 3.5.1 BGA7130 3.4.1 BGY887B 3.6.1 BLF6G27(LS)-135 3.7.1.6 BFT92 3.3.1 BGA7204 3.4.1 BGY888 3.6.1 BLF6G27(LS)-75 3.7.1.6 BFT92W 3.3.1 BGA7210 3.4.1 BLA0912-250R 3.7.3.1 BLF6G27(S)-45 3.7.1.6 BFT93 3.3.1 BGA7350 3.4.1 BLA1011-10 3.7.3.1 BLF6G27L(S)-40P 3.7.1.6 BFT93W 3.3.1 BGA7351 3.4.1 BLA1011-2 3.7.3.1 BLF6G27L(S)-50BN 3.7.1.6 BFU610F 3.3.1 BGD712 3.6.3 BLA1011-300 3.7.3.1 BLF6G38-10(G) 3.7.1.7 BFU630F 3.3.1 BGD712C 3.6.3 BLA1011(S)-200R 3.7.3.1 BLF6G38(LS)-100 3.7.1.7 BFU660F 3.3.1 BGD714 3.6.3 BLA6G1011-200R 3.7.3.1 BLF6G38(LS)-50 3.7.1.7 BFU690F 3.3.1 BGD812 3.6.3 BLA6G1011LS-200RG 3.7.3.1 BLF6G38(S)-25 3.7.1.7 BFU710F 3.3.1 BGD814 3.6.3 BLA6H0912-500 3.7.3.1 BLF6H10L(S)-160 3.7.1 BFU725F/N1 3.3.1 BGD816L 3.6.3 BLA6H1011-600 3.7.3.1 BLF7G10L(S)-250 3.7.1.1 BFU730F 3.3.1 BGE787B 3.6.1 BLD6G21L(S)-50 3.7.1.3 BLF7G15LS-200 3.7.1.2 BFU730LX 3.3.1 BGE788C 3.6.1 BLD6G22L(S)-50 3.7.1.4 BLF7G15LS-300P 3.7.1.2 BFU760F 3.3.1 BGE885 3.6.1 BLF174XR(S) 3.7.2 BLF7G20L(S)-200 3.7.1.3 BFU790F 3.3.1 BGM1013 3.4.1 BLF178XR(S) 3.7.2 BLF7G20L(S)-250P 3.7.1.3 BGA2001 3.4.1 BGM1014 3.4.1 BLF2425M6L(S)180P 3.7.2 BLF7G20L(S)-90P 3.7.1.3 BGA2002 3.4.1 BGO807C 3.6.4 BLF2425M7L(S)140 3.7.2 BLF7G20LS-140P 3.7.1.3 BGA2003 3.4.1 BGO807CE 3.6.4 BLF2425M7L(S)200 3.7.2 BLF7G20LS-260A 3.7.1 BGA2011 3.4.1 BGR269 3.6.5 BLF2425M7L(S)250P 3.7.2 BLF7G21L(S)-160P 3.7.1.4 BGA2012 3.4.1 BGU6101 3.4.1 BLF25M612(G) 3.7.2 BLF7G21LS-160 3.7.1.4 BGA2022 3.4.1 BGU6102 3.4.1 BLF369 3.7.2.1 BLF7G22L(S)-100P 3.7.1.4 BGA2031/1 3.4.1 BGU6104 3.4.1 BLF3G21-30 3.7.1.4 BLF7G22L(S)-130 3.7.1.4 BGA2709 3.4.1 BGU7003 3.4.1 BLF3G21-6 3.7.1.4 BLF7G22L(S)-160 3.7.1.4 BGA2712 3.4.1 BGU7003W 3.4.1 BLF571 3.7.2.1 BLF7G22L(S)-200 3.7.1.4 BGA2714 3.4.1 BGU7004 3.4.1 BLF572XR(S) 3.7.2 BLF7G22L(S)-250P 3.7.1.4 BGA2715 3.4.1 BGU7005 3.4.1 BLF573(S) 3.7.2.1 BLF7G24L(S)-100 3.7.1.5 BGA2716 3.4.1 BGU7007 3.4.1 BLF574 3.7.2.1 BLF7G24L(S)-140 3.7.1.5 BGA2717 3.4.1 BGU7008 3.4.1 BLF574XR(S) BGA2748 3.4.1 BGU7031 3.4.1 BLF578 BGA2776 3.4.1 BGU7032 3.4.1 BLF578XR(S) BGA2800 3.4.1 BGU7033 3.4.1 BLF642 BGA2801 3.4.1 BGU7041 3.4.1 BLF645 BGA2802 3.4.1 BGU7042 3.4.1 BLF647 BGA2803 3.4.1 BGU7044 3.4.1 BGA2815 3.4.1 BGU7045 BGA2817 3.4.1 BGA2818 BGA2819 3.7.2 BLF7G24L(S)-160P 3.7.1 3.7.2.1 BLF7G27L-200PB 3.7.1.6 3.7.2 BLF7G27L(S)-100 3.7.1.6 3.7.2.2 BLF7G27L(S)-140 3.7.1.6 3.7.2.1 BLF7G27L(S)-150P 3.7.1.6 3.7.2.1 BLF7G27L(S)-75P 3.7.1.6 BLF647P(S) 3.7.2 BLF7G27L(S)-90P 3.7.1.6 3.4.1 BLF6G10(LS)-135RN 3.7.1.1 BLF7G27LS-90PG BGU7051 3.4.1 BLF6G10(LS)-160RN 3.7.1.1 BLF861A 3.4.1 BGU7052 3.4.1 BLF6G10(LS)-200RN 3.7.1.1 BLF871(S) 3.7.2.1 3.4.1 BGU7053 3.4.1 BLF6G10(S)-45 3.7.1.1 BLF878 3.7.2.2 BGA2850 3.4.1 BGU7060 3.4.1 BLF6G10L-40BRN 3.7.1.1 BLF879P 3.7.2.2 BGA2851 3.4.1 BGU7061 3.4.1 BLF6G10L(S)-260PRN 3.7.1.1 BLF881(S) 3.7.2.2 BGA2865 3.4.1 BGU7062 3.4.1 BLF6G15L-250PBRN 3.7.1.2 BLF884P(S) 3.7.2.2 BGA2866 3.4.1 BGU7063 3.4.1 BLF6G15L-40BRN 3.7.1.2 BLF888 3.7.2.2 BGA2867 3.4.1 BGU8006 3.4.1 BLF6G15L(S)-40RN 3.7.1 BLF888A(S) 3.7.2.2 BGA2868 3.4.1 BGU8007 3.4.1 BLF6G20(LS)-110 3.7.1.3 BLF888B(S) 3.7.2.2 BGA2869 3.4.1 BGX7100 3.4.2 BLF6G20(LS)-180RN 3.7.1.3 BLF8G10L(S)-160 3.7.1.1 BGA2870 3.4.1 BGX7101 3.4.2 BLF6G20(LS)-75 3.7.1.3 BLF8G10L(S)-160V 3.7.1 BGA2874 3.4.1 BGX7220 3.4.2 BLF6G20(S)-45 3.7.1.3 BLF8G10L(S)-300P 3.7.1 BGA6101 3.4.1 BGX7221 3.4.2 BLF6G20LS-140 3.7.1.3 BLF8G10LS-200GV 3.7.1 NXP Semiconductors RF Manual 16th edition 3.7.1 3.7.2.1 127 Productindex Type Portfolio chapter Type Portfolio chapter BLF8G10LS-270GV 3.7.1 BLT80 3.3.1 PMBF4393 3.5.1 BLF8G10LS-400PGV 3.7.1 BLT81 3.3.1 PMBFJ108 3.5.1 BLF8G20L(S)-200V 3.7.1 BLU6H0410L(S)-600P 3.7.3 PMBFJ109 3.5.1 BLF8G20LS-270GV 3.7.1 BSR56 3.5.1 PMBFJ110 3.5.1 BLF8G20LS-270PGV 3.7.1 BSR57 3.5.1 PMBFJ111 3.5.1 BLF8G22LS-160BV 3.7.1 BSR58 3.5.1 PMBFJ112 3.5.1 BLF8G22LS-200GV 3.7.1 BSS83 3.5.2 PMBFJ113 3.5.1 BLF8G22LS-270GV 3.7.1 CGD1040HI 3.6.3 PMBFJ174 3.5.1 BLF8G22LS-400PGV 3.7.1 CGD1042H 3.6.3 PMBFJ175 3.5.1 BLF8G24L(S)-200P 3.7.1 CGD1042HI 3.6.3 PMBFJ176 3.5.1 3.7.1.6 CGD1044H 3.6.3 PMBFJ177 3.5.1 BLF8G27LS-140G 3.7.1 CGD1044HI 3.6.3 PMBFJ308 3.5.1 BLF8G27LS-140V 3.7.1 CGD1046HI 3.6.3 PMBFJ309 3.5.1 BLF8G27LS-200PGV 3.7.1 CGD942C 3.6.3 PMBFJ310 3.5.1 BLF8G27LS-280PGV 3.7.1 CGD944C 3.6.3 PMBFJ620 3.5.1 Type BLF8G27LS-140 Type Portfolio chapter BLL1214-250R 3.7.3.2 CGD982HCI 3.6.3 PRF947 3.3.1 BLL1214-35 3.7.3.2 CGD985HCI 3.6.3 PRF949 3.3.1 BLL6G1214L-250 3.7.3.2 CGD987HCI 3.6.3 PRF957 3.3.1 3.7.3 CGY1032 3.6.2 TFF1003HN 3.4.4 BLL6H0514-25 3.7.3.2 CGY1041 3.6.2 TFF1007HN 3.4.4 BLL6H0514L(S)-130 3.7.3.2 CGY1043 3.6.2 TFF1014HN 3.4.3 BLL6H1214(LS)-500 3.7.3.2 CGY1047 3.6.2 TFF1015HN 3.4.3 BLL6H1214L(S)-250 3.7.3.2 CGY1049 3.6.2 TFF1017HN 3.4.3 BLL6H1214LS-500 3.7.3 CGY1085A 3.6.2 TFF11070HN 3.4.4 BLM6G10-30(G) 3.7.1.1 CGY888C 3.6.1 TFF11073HN 3.4.4 BLM6G22-30(G) 3.7.1.4 CLF1G0035-100 3.7.4 TFF11077HN 3.4.4 BLM7G22S-60PB(G) 3.7.1 CLF1G0035-50 3.7.4 TFF11080HN 3.4.4 BLP7G07S-140P(G) 3.7.1 CLF1G0060-10 3.7.4 TFF11084HN 3.4.4 BLP7G09S-140P(G) 3.7.1 CLF1G0060-30 3.7.4 TFF11088HN 3.4.4 BLP7G22-10 3.7.1 JenNet 3.8 TFF11092HN 3.4.4 BLP7G22-10* 3.7.1.4 JenNet-IP 3.8 TFF11094HN 3.4.4 BLS2933-100 3.7.3.3 JN5142-001 3.8 TFF11096HN 3.4.4 BLS6G2731-6G 3.7.3.3 JN5142-J01 3.8 TFF11101HN 3.4.4 BLS6G2731(S)-120 3.7.3.3 JN5148-001 3.8 TFF11105HN 3.4.4 BLS6G2731S-130 3.7.3.3 JN5148-001-M00 3.8 TFF11110HN 3.4.4 3.7.3 JN5148-001-M03 3.8 TFF11115HN 3.4.4 BLS6G2933S-130 3.7.3.3 JN5148-001-M04 3.8 TFF11121HN 3.4.4 BLS6G3135(S)-120 3.7.3.3 JN5148-J01 3.8 TFF11126HN 3.4.4 BLS6G3135(S)-20 3.7.3.3 JN5148-Z01 3.8 TFF11132HN 3.4.4 BLS7G2325L-105 3.7.3.3 PBR941 3.3.1 TFF11139HN 3.4.4 3.7.3 PBR951 3.3.1 TFF11145HN 3.4.4 3.7.3.3 PMBD353 3.2.4 TFF11152HN 3.4.4 BLS7G3135L(S)-350P 3.7.3 PMBD354 3.2.4 ZigBee PRO 3.8 BLT50 3.3.1 PMBF4391 3.5.1 BLT70 3.3.1 PMBF4392 3.5.1 BLL6G1214LS-250 BLS6G2735L(S)-30 BLS7G2729L(S)-350P BLS7G2933S-150 128 NXP Semiconductors RF Manual 16th edition Notes NXP Semiconductors RF Manual 16th edition 129 Notes 130 NXP Semiconductors RF Manual 16th edition www.nxp.com © 2012 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 53520-1205-1011 www.climatepartner.com Date of release: June 2012 Document order number: 9397 750 17272 Printed in the Netherlands