DTA143TM / DTA143TE / DTA143TUA DTA143TKA / DTA143TSA Transistors Digital transistors (built-in resistor) DTA143TM / DTA143TE / DTA143TUA DTA143TKA / DTA143TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit C B R1 E B : Base C : Collector E : Emitter !Structure PNP digital transistor (Built in resistor type) !External dimensions (Units : mm) DTA143TM 1.2 0.8 0.2 DTA143TE 0.2 1.6±0.2 (1) Base (2) Emitter (3) Collector Abbreviated symbol : 93 0.7±0.1 +0.1 0.2−0.05 (2) (3) 0.55±0.1 +0.1 0.3 −0.05 ROHM : EMT3 0~0.1 (1) Emitter (2) Base (3) Collector 0.1Min. 0.22 0.5 0.13 0~0.1 ROHM : VMT3 (1) 0.15Max. 0.5 0.5 0.8±0.1 +0.1 0.2−0.05 (1) 1.6±0.2 0.8 (3) 0.4 0.4 1.2 0.32 1.0±0.1 (2) 0.15±0.05 Abbreviated symbol : 93 DTA143TKA 2.0±0.2 0.65 0.65 1.6+0.2 −0.1 0~0.1 ROHM : SPT EIAJ : SC-72 3Min. 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.15 0.45 + −0.05 (1) Emitter (2) Collector (3) Base 0.3Min. ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : 93 2±0.2 3±0.2 (15Min.) 5 0~0.1 (3) (1) Emitter (2) Base (3) Collector Abbreviated symbol : 93 4±0.2 (2) 2.8±0.2 2.1±0.1 (1) 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions DTA143TSA 0.8±0.1 0.95 0.95 (2) (3) ROHM : UMT3 EIAJ : SC-70 1.1+0.2 −0.1 1.9±0.2 0.7±0.1 0.2 1.25±0.1 (1) 2.9±0.2 0.9±0.1 1.3±0.1 0.1Min. DTA143TUA (1) Emitter (2) Base (3) Collector DTA143TM / DTA143TE / DTA143TUA DTA143TKA / DTA143TSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTA143T Symbol M E UA ) KA Unit SA Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 150 200 300 mW !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA Collector cutoff current ICBO − − −0.5 µA VCB=−50V Emitter cutoff current IEBO − − −0.5 µA VEB=−4V Parameter Conditions IC=−50µA VCE(sat) − − −0.3 V IC/IB=−5mA/−0.25mA DC current transfer ratio hFE 100 250 600 − IC=−1mA, VCE=−5V Input resistance R1 3.29 4.7 6.11 kΩ Transition frequency fT − 250 − MHz Collector-emitter saturation voltage − VCE=−10V, IE=5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTA143TM DTA143TE − DTA143TUA − − DTA143TKA − − − DTA143TSA − − − − − ∗ DTA143TM / DTA143TE / DTA143TUA DTA143TKA / DTA143TSA Transistors 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves −1 −500m −200m lC/lB=20 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current