ETC FOA1100/2100

P R O D U C T
B R I E F
Semiconductor Solutions for
High Speed Communication
and Fiber Optic Applications
The FOA21002A2 is the industry's first STM64/OC-192
Laser Diode Driver for SDH/SONET systems in Silicon Germanium technology. This new device is a key component
for leading-edge high speed optical communication systems for regional, metropolitan and backbone transport
data networks at the highest speeds of up to 10.7 Gbit/s
over one single fiber. It is a member of the complete
10 Gbit/s chipset in the Silicon Germanium technology
with the industry’s lowest power consumption.
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FOA21002A2
Typical Applications
Features
Nominal data rate up to
10.7 Gbit/s
Suitable for driving electroabsorption modulators (EAM)
Suitable for direct modulation of 50 or 25 Ω matched
laser diodes
Adjustable output current
swing up to 60 mA
(3 V across 50 Ω)
Pulse shape adjustment:
duty cycle, output voltage
undershoot
Fully differential design
Low power consumption
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Fiber optics telecom and
datacom applications
SONET/SDH OC-192/STM-64
with and without FEC
Driver for EAM, laser diode
modules, transmission lines
Test and Measurement
equipment:
Clock driver, buffer
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Main Advantages
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Data rate up to 10.7 Gbit/s
Industry's lowest power
consumption of typical 1.5 W
(for full voltage swing of 3 V)
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Suitable for driving both
50 Ω matched ElectroAbsorption Modulators
(EAM) as well as direct modulation of 50 or 25 Ω matched
laser diodes. (for single or differential transmission lines)
Adjustable output current
swing up to 60 mA
(3 V across 50 Ω)
Pulse shape adjustment:
Eye symmetry, duty cycle,
output voltage undershoot
Fully differential design
Supply voltage of -5.2 V
and +1.8 V
Small chip size of
1.415 x 1.045 mm (bare die)
Packing
Type
Sales Code
Package
LDD
FOA21002A
Bare die
F O A 2 1 0 0 2 A 2
FOA21002A1 Laser Diode Driver
L D D 9 .9 5 - 1 0 . 7 G b i t / s , - 5 . 2 V
N e v e r
s t o p
t h i n k i n g .
P R O D U C T
V CC
FOA21002 A 2
50 Ω
60 Ω
50 Ω
60 Ω
V CCQH
V CCQL
B R I E F
FOA21002A2
Block Diagram
QH
QL
IH
IL
IOS1H
IMOD
IOS1L
V EE
ISS1 EF23 EF12 EF22
IOS2H IOS2L
Application Example
+1.8 V
40 Ω
V CC
DataIN+
IMOD
L*
L*
V CCQH
V CCQL
50 Ω
FOA21002A 2
IH
DataIN-
QL
IOS1H
Open
QH
IL
45 Ω
50 Ω
Laser
Module
IOS1L
Open
V EE
-5.2 V
600 Ω
ISS1
EF23
160 Ω
EF12
Open
EF22
Open
Data
Processing
MUX+CMU
Laser Driver
FOA41001B1
FOA21002A1
Framer/
Mapper
FOAxxxx
One Chip
Transceiver
Laser 1)
10 Gbit/s
Chipset Overview
FOA6100xB1
DEMUX+CDR
CDR
TIA
FOA51001B1
FOA31002B1
FOA11002A2
PIN 1)
Optional Serial CDR
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
81541 München
© Infineon Technologies AG 2002. All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide.
Published by Infineon Technologies AG
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or
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endangered.
Ordering No. B168-H7713-G1-X-7600
Printed in Germany
PS 1201.5
NB