FS0609.H STANDARD SCR TO220-AB On-State Current Gate Trigger Current 6 Amp > 2 mA to < 15 mA Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. K These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. A G Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. CONDITIONS RGK = 1 KΩ Max. Unit 6 3.8 73 70 24.5 5 4 10 1 +125 +150 260 A A A A A 2s V A W W ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Dec - 02 FS0609.H STANDARD SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS SENSITIVITY Gate Trigger Current VD = 12 VDC , RL = 33Ω. Tj = 25 ºC IDRM / IRRM Off-State Leakage Current VD = VDRM , VR = VRRM , VTM VGT VGD On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage IH IL dv / dt Holding Current IT = 100 mA , Gate open Tj = 25 ºC MAX IG = 1.2 IGT Tj = 25 ºC TYP Latching Current Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Tj = 110 ºC MIN Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, MIN di / dt Tj = 25 ºC Tj = 110 ºC at IT = 12 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC 09 2 15 0.01 2 1.6 1.5 0.2 MIN MAX MAX MAX MAX MAX MIN IGT Unit mA mA V V V 30 mA 50 200 mA V/µs 50 A/µs Tj = 125 ºC Rth(j-c) Thermal Resistance Junction-Case for DC 2.5 ºC/W Rth(j-a) Thermal Resistance Junction-Amb for DC 60 ºC/W Vt0 Threshold Voltage Tj = 125 ºC MAX 0.85 V Rd Dynamic resistance Tj = 125 ºC MAX 46 mΩ PART NUMBER INFORMATION F S 06 09 B H 00 TR FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Dec - 02 FS0609.H STANDARD SCR Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) T case (ºC) P (W) 10 10 α = 180 º 8 α = 180 º 8 Rth=10 ºC/W Rth=5 ºC/W α = 120 º α = 90 º 6 Rth=0 ºC/W -110 Rth=15 ºC/W D.C. 6 α = 60 º α = 30 º -115 4 4 Rth=37 ºC/W -120 2 2 360 º α IT(av)(A) 0 0 1 2 3 4 5 6 0 7 0 Fig. 3: Average and D.C. on-state current versus case temperature. 25 50 75 100 -125 Tamb (ºC) 125 Fig. 4: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). I T(av) (A) I T(av) (A) 2.2 10 2.0 D.C. 1.8 8 D.C. 1.6 1.4 6 α = 180 º 1.2 α = 180 º 1.0 4 0.8 0.6 2 0.4 0.2 T case (ºC) 0 0 25 50 75 100 Tamb (ºC) 0.0 125 0 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. 25 50 75 100 125 Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. K = [Zth(j-c) / Rth (j-c)] IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 1.0 2.0 1.8 1.6 0.5 IGT 1.4 1.2 IH 1.0 0.8 0.6 0.2 0.4 0.2 0.1 1E-3 tp (s) 1E-2 1E-1 1E+0 0.0 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Dec - 02 FS0609.H STANDARD SCR Fig. 7: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) Fig. 8: On-state characteristics (maximum values). ITM(A) 80 100.0 Tj initial = 25 ºC F = 50 Hz 70 Tj = Tj max. 60 10.0 50 40 Tj = 25 ºC 30 1.0 Tj max Vto = 0.85 V Rt = 46 mΩ 20 10 Number of cycles 0 1 10 100 1000 VTM(V) 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 300 Tj initial = 25 ºC ITSM 100 50 I2 t 20 tp(ms) 10 2 1 5 10 PACKAGE MECHANICAL DATA TO-220AB REF. c B b2 L F øI A 14 c2 a1 13 12 a2 M b1 e c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L I2 I3 M Min. 15.20 DIMENSIONS Milimeters Nominal Max. 15.90 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 16.40 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70 2.60 Dec - 02