ETC GF2208

GF2208
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 8mΩ ID 13A
H
C
N
TREENFET
G
®
SO-8
0.197 (5.00)
0.189 (4.80)
8
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
1
Dimensions in inches
and (millimeters)
4
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.05 (1.27)
0.04 (1.02)
0.019 (0.48)
x 45 °
0.010 (0.25)
0.009 (0.23)
0.007 (0.18)
0.035 (0.889)
0.025 (0.635)
0.069 (1.75)
0.053 (1.35)
0 °– 8 °
0.009 (0.23)
0.004 (0.10)
0.165 (4.19)
0.155 (3.94)
0.245 (6.22)
Min.
0.050 typ.
(1.27)
Mounting Pad Layout
0.050(1.27)
0.016 (0.41)
Mechanical Data
Features
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter
Symbol
Drain-Source Voltage
A
= 25°C unless otherwise noted)
Limit
Unit
VDS
30
VGS
± 20
ID
13
10.5
IDM
± 50
Continuous Source Current (Diode Conduction)(1)
IS
2.3
TA = 25°C
TA = 70°C
PD
2.5
1.6
W
TJ, Tstg
–55 to 150
°C
RθJA
50
°C/W
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain Current
TJ = 150°C(1)
Pulsed Drain Current
Maximum Power Dissipation(1)
Operating Junction and Storage Temperature Range
(1)
Maximum Junction-to-Ambient
Thermal Resistance
Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.
V
A
7/10/01
GF2208
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
J
Parameter
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
–
3.0
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ± 20V
–
–
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
–
–
1
VDS=30V, VGS=0V, TJ=55°C
–
–
5
VDS ≥ 5V, VGS = 10V
30
–
–
VGS = 10V, ID = 13A
–
6
8
VGS = 4.5V, ID = 11A
–
8.5
11
VDS = 15V, ID = 13A
–
50
VDS = 15V, VGS = 4.5V, ID = 13A
–
28
39
–
56
85
–
7.5
–
–
10
–
–
9
14
–
9
14
–
100
167
–
31
62
Static
On-State Drain Current(2)
ID(on)
Drain-Source On-State Resistance(2)
RDS(on)
Forward Transconductance(2)
gfs
µA
A
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = 15V, VGS = 10V
ID = 13A
VDD = 15V, RL = 15Ω
tr
Turn-Off Delay Time
ID ≈ 1A, VGEN = 10V
td(off)
Fall Time
RG = 6Ω
tf
nC
ns
Input Capacitance
Ciss
VGS = 0V
–
3128
–
Output Capacitance
Coss
VDS = 15V
–
618
–
Reverse Transfer Capacitance
Crss
f = 1.0MHZ
–
300
–
VSD
IS = 2.3A, VGS = 0V
–
–
1.1
V
trr
IF = 2.3A, di/dt = 100A/µs
–
49
90
ns
pF
Source-Drain Diode
Diode Forward Voltage(2)
Source-Drain Reverse Recovery Time
Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.
(2) Pulse test; pulse width ≤ 300 µs,
VDD
duty cycle ≤ 2%
Switching
Test Circuit
ton
RD
VIN
VOUT
D
Switching
Waveforms
td(on)
RG
tr
td(off)
tf
90 %
90%
Output, VOUT
VGEN
toff
10%
10%
INVERTED
DUT
G
90%
50%
S
Input, VIN
50%
10%
PULSE WIDTH
GF2208
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
10V
6.0V
50
4.5V
VDS = 10V
40
40
4.0V
ID -- Drain Current (A)
ID -- Drain Source Current (A)
50
3.5V
30
3.0V
20
10
30
TJ = 125°C
20
--55°C
25°C
10
VGS = 2.5V
0
0
0
0.5
1
1.5
2
2.5
1
1.5
2
2.5
3
3.5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
Fig. 4 – On-Resistance vs.
Drain Current
4
0.014
1.8
0.012
1.6
RDS(ON) -- On-Resistance (Ω)
VGS(th) -- Threshold Voltage (V)
ID = 250µA
1.4
1.2
1
0.8
0
25
50
75
100
125
150
VGS = 10V
0.004
1.6
VGS = 10V
ID = 13A
1.4
1.2
1
0.8
0.6
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
0
10
20
30
ID -- Drain Current (A)
Fig. 5 – On-Resistance vs.
Junction Temperature
RDS(ON) -- On-Resistance
(Normalized)
0.006
0
--25
TJ -- Junction Temperature (°C)
--50
VGS = 4.5V
0.008
0.002
0.6
--50
0.01
125
150
40
50
GF2208
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.03
10
VDS = 15V
ID = 13A
VGS -- Gate-to-Source Voltage (V)
RDS(ON) -- On-Resistance (Ω)
ID = 13A
0.025
0.02
0.015
TJ = 125°C
0.01
0.005
25°C
0
4
6
8
4
2
10
0
10
20
30
40
50
VGS -- Gate-to-Source Voltage (V)
Qg -- Total Gate Charge (nC)
Fig. 8 – Capacitance
Fig. 9 – Source-Drain Diode
Forward Voltage
60
100
4500
VGS = 0V
f = 1MHZ
VGS = 0V
4000
3500
Ciss
IS -- Source Current (A)
C -- Capacitance (pF)
6
0
2
3000
2500
2000
1500
1000
10
TJ = 125°C
1
25°C
0.1
--55°C
Coss
Crss
500
0
8
0.01
0
5
10
15
20
VDS -- Drain-to-Source Voltage (V)
25
30
0
0.2
0.4
0.6
0.8
VSD -- Source-to-Drain Voltage (V)
1
1.2
GF2208
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
43
100
42
10
41
40
1
39
38
0.1
37
36
0
25
50
75
100
125
150
0.01
0.1
1
10
100
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100