GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS(th) TO-236AB (SOT-23) ® .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source 3. Drain 2 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters) .098 (2.5) .091 (2.3) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) Mounting Pad Layout .047 (1.20) .035 (0.90) .007 (.180) .003 (.085) .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) max. .004 (0.1) 1 VDS-20V RDS(ON) 0.13Ω ID -2.3A Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 01 • Advanced Trench Process Technology • High density cell design for ultra-low on-resistance • Popular SOT-23 package with copper lead frame for superior thermal and electrical capabilities • Compact and low profile • – 2.5V rated Maximum Ratings and Thermal Characteristics Parameter Drain-Source Voltage Gate-Source-Voltage TA = 25°C TA = 70°C Continuous Drain Current TJ = 150°C Pulsed Drain Current (1) Maximum Power Dissipation (2) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance (2) (TA = 25°C unless otherwise noted) Symbol Limit Unit VDS –20 V VGS ±8 V ID –2.3 –1.5 A IDM –10 A PD 1.25 0.8 W TJ, Tstg –55 to +150 °C RθJA 100 °C/W Note: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, t ≤ 5 sec. 7/11/01 GF2301 P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = –250µA –20 — — V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250µA –0.45 — — V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 8V — — ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = –16V, VGS = 0V — — –1.0 VDS = –16V, VGS = 0V, TJ = 55°C — — –10 VDS ≤ –5V, VGS = –4.5V –6 — — VDS ≤ –5V, VGS = –2.5V –3 — — VGS = –4.5V, ID = –2.8A — 95 130 VGS = –2.5V, ID = –2.0A — 122 190 VDS = –5V, ID = –2.8A — 6.5 — — 5.4 10 — 0.8 — — 1.1 — — 5 25 — 19 60 — 95 110 — 65 80 — 447 — — 124 — — 80 — Static On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –6V, VGS = –4.5V ID = –2.8A VDD = –6V, RL = 6Ω ID ≈ –1A, VGEN = –4.5V RG = 6Ω VDS = –6V, VGS = 0V f = 1.0MHZ nC ns pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage IS — — — –1.6 A VSD IS = –1.6A, VGS = 0V — –0.8 –1.2 V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Switching Test Circuit Switching Waveforms VDD toff RD VIN td(on) td(off) tf 90 % 90% Output, VOUT RG tr VOUT D VGEN ton 10% 10% DUT G 90% 50% S Input, VIN 50% 10% INVERTED PULSE WIDTH GF2301 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10 VGS = --3.0V, --3.5V, --4.0V, --4.5V, --5.0V --55°C VDS = --10V 8 8 --2.5V -- ID -- Drain Current (A) --ID -- Drain-to-Source Current (A) 10 --2.0V 6 4 --1.5V 25°C 6 TJ = 125°C 4 2 2 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 --VDS -- Drain-to-Source Voltage (V) -- VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 3 0.7 ID = --250µA 0.4 RDS(ON) -- On-Resistance (Ω) --VGS(th) -- Gate-to-Source Threshold Voltage (V) 0.6 0.5 0.4 0.3 0.2 VGS = --2.5V 0.2 0.1 VGS = --4.5V 0 0.1 --50 0.3 --25 0 25 50 75 100 125 0 150 2 4 6 Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.4 VGS = --4.5V ID = --2.8A ID = -- 2.8A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 10 TJ -- Junction Temperature (°C) 1.6 1.4 1.2 1 0.8 0.6 --50 8 -- ID -- Drain Current (A) 0.3 0.2 TJ = 125°C 0.1 TJ = 25°C 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 1 2 3 4 5 6 -- VGS -- Gate-to-Source Voltage (V) 7 8 GF2301 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 700 VDS = --6V ID = --2.8A f = 1MHz VGS = 0V 600 4 C -- Capacitance (pF) -- VGS -- Gate-to-Source Voltage (V) 5 3 2 500 Ciss 400 300 200 1 Coss 100 Crss 0 0 0 1 2 3 5 4 0 6 5 Qg -- Gate Charge (nC) Fig. 9 – Source-Drain Diode Forward Voltage D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance --IS -- Source Current (A) TJ = 150°C 25°C --55°C 0.5 0.7 0.9 1.1 1.3 1.5 0.2 0.1 0.1 PDM 0.05 0.02 t1 0.01 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 100°C/W 4. TJ - TA = PDM * RθJA (t) Single Pulse 0.001 0.0001 0.001 1.7 t2 0.01 0.01 0.1 1 10 100 Pulse Duration (sec.) --VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration Fig. 12 – Maximum Safe Operating Area 20 100 Single Pulse RθJA = 100°C/W TA = 25°C 10 -- ID -- Drain Current (A) 15 Power (W) 20 1 VGS = 0V 10 5 0 0.001 15 Fig. 10 – Thermal Impedance 10 1 0.3 10 --VDS -- Drain-to-Source Voltage (V) 0µ 10 s 1m 10 1 10 ms 0m s s RDS(ON) Limit 1s 0.1 DC VGS = --4.5V Single Pulse RθJA = 100°C/W TA = 25°C 0.01 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 -- VDS -- Drain-Source Voltage (V) 100