GF4936 Dual N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 37mΩ ID 5.8A H C N TREENFET G ® D1 D1 D2 D2 8 7 6 5 SO-8 Q1 0.197 (5.00) 0.189 (4.80) 8 Q2 5 1 0.157 (3.99) 0.150 (3.81) S1 2 3 G1 S2 4 G2 0.244 (6.20) 0.228 (5.79) 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) Dimensions in inches and (millimeters) 4 0.019 (0.48) x 45 ° 0.010 (0.25) 0.069 (1.75) 0.053 (1.35) 0.035 (0.889) 0.025 (0.635) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25°C TA = 70°C Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Note: (1) Surface mounted on FR4 board, t ≤ 10 sec. A = 25°C unless otherwise noted) Limit Unit VDS 30 VGS ± 20 ID 5.8 IDM 20 PD 2.0 1.3 W TJ, Tstg –55 to 150 °C RθJA 62.5 °C/W V A 4/11/01 GF4936 Dual N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA IDSS VDS = 30V, VGS = 0V – – 1 µA ID(on) VDS ≥ 5V, VGS = 10V 20 – – A VGS = 10V, ID = 5.8A – 23.5 37 VGS = 4.5V, ID = 4.7A – 32.5 55 VDS = 15V, ID = 5.8A – 16 – – 15 25 – 2.1 – – 2.8 – – 7 16 – 6 16 – 25 40 – 8 35 Static Gate-Body Leakage Zero Gate Voltage Drain Current (2) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge VDS = 15V, VGS = 10V Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time ID = 5.8A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≈ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 840 – Output Capacitance Coss VDS = 15V – 150 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 80 – – – 1.7 A – 0.75 1.2 V pF Source-Drain Diode Maximum Diode Forward Current IS (2) Diode Forward Voltage VSD IS = 1.7A, VGS = 0V Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 VGS = 10V 25 7.0V 6.0V 5.0V 20 4.5V VDS = 10V 25 4.0V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 30 3.5V 15 10 3.0V 20 15 10 TJ = 125°C 25°C --55°C 5 5 2.5V 0 0 1 2 3 4 2 3 4 VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 5 0.05 1.8 ID = 250µA 0.045 1.6 1.4 1.2 1 0.8 VGS = 4.5V 0.035 0.03 5V 0.025 10V 0.02 0.01 --25 0 25 50 75 100 125 150 Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 5.8A 1.4 1.2 1 0.8 0.6 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 5 10 15 20 ID -- Drain Current (A) TJ -- Junction Temperature (°C) --50 0.04 0.015 0.6 --50 RDS(ON) -- On-Resistance (Normalized) 1 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 125 150 25 30 GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 ID = 5.8A 0.1 VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) 0.12 0.08 0.06 0.04 TJ = 125°C 0.02 25°C 0 8 6 4 2 0 2 4 6 8 10 0 2 4 6 8 10 12 14 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 1200 16 100 f = 1MHZ VGS = 0V 1000 VGS = 0V Ciss IS -- Source Current (A) C -- Capacitance (pF) VDS = 15V ID = 5.8A 800 600 400 Coss 200 10 TJ = 125°C 1 25°C --55°C 0.1 Crss 0 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GF4936 Dual N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Thermal Impedance 1 41 D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance ID = 250µA BVDSS -- Drain-to-Source Breakdown Voltage (V) 40 39 38 37 36 35 --50 --25 0 25 50 75 100 125 0.2 0.1 0.1 PDM 0.05 0.02 t1 t2 0.01 0.01 Single Pulse 0.001 0.0001 0.001 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration 1 10 100 Fig. 13 – Maximum Safe Operating Area 100 Single Pulse RθJA = 82°C/W TA = 25°C 10 ID -- Drain Current (A) 40 Power (W) 0.1 Pulse Duration (sec.) 50 30 20 1m 10 s ms 0m 1s 1 0µ s 10 10 s RDS(ON) Limit 10s 0.1 10 0 0.01 0.01 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 82°C/W (on 1-in2 2 oz. Cu. FR-4) 4. TJ - TA = PDM * RθJA (t) VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C DC 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100