ETC GFU30N03

GFU30N03
Vishay Semiconductor
New Product
N-Channel Enhancement-Mode MOSFET
H
C
N
E ET
R
T
F
N
TO-251 (IPAK)
E
D
VDS 30V
RDS(ON) 15mΩ
ID 43A
TM
G
0.265 (6.73)
0.255 (6.48)
0.214 (5.43)
0.206 (5.23)
0.023 (0.58)
0.018 (0.46)
D
0.050 (1.27)
0.035 (0.89)
S
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
and motor drives
• Fast Switching for High Efficiency
0.245 (6.22)
0.235 (5.97)
G
G
0.094 (2.39)
0.087 (2.21)
S
Mechanical Data
Case: JEDEC TO-251 molded plastic body
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
0.375 (9.53)
0.350 (8.89)
0.035 (0.89)
0.028 (0.71)
0.102 (2.59)
0.078 (1.98)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (T
Parameter
C
= 25°C unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
ID
43
IDM
80
PD
44.5
17.8
W
TJ, Tstg
–55 to 150
°C
RθJC
2.8
RθJA
125
Continuous Drain Current(1)
Pulsed Drain Current
Maximum Power Dissipation
TC = 25°C
TC = 100°C
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
(2)
Junction-to-Ambient Thermal Resistance
Unit
V
A
°C/W
Note: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Document Number 74573
17-Dec-01
www.vishay.com
1
GFU30N03
Vishay Semiconductor
Electrical Characteristics (T
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
–
3.0
V
IGSS
VGS = ±20V, VDS = 0V
–
–
±100
nA
IDSS
VDS = 30V, VGS = 0V
–
–
1
µA
ID(on)
VDS ≥ 5V, VGS = 10V
40
–
–
A
VGS = 10V, ID = 20A
–
12.5
15
VGS = 4.5V, ID = 17A
–
17.5
21
VDS = 15V, ID = 20A
–
35
–
VDS=15V, VGS=5.0V, ID =20A
–
16
22
–
34
48
–
5.7
–
–
4.7
–
–
10
20
–
9
18
–
47
75
–
13
26
J
Static
Gate-Body Leakage
Zero Gate Voltage Drain Current
(1)
On-State Drain Current
Drain-Source On-State Resistance(2)
RDS(on)
Forward Transconductance(1)
gfs
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = 15V, VGS = 10V
ID = 20A
VDD = 15V, RL = 15Ω
tr
Turn-Off Delay Time
ID ≅ 1A, VGEN = 10V
td(off)
Fall Time
RG = 6Ω
tf
nC
ns
Input Capacitance
Ciss
VGS = 0V
–
1850
–
Output Capacitance
Coss
VDS = 15V
–
315
–
Reverse Transfer Capacitance
Crss
f = 1.0MHZ
–
150
–
IS
–
–
–
20
A
VSD
IS = 20A, VGS = 0V
–
0.91
1.3
V
pF
Source-Drain Diode
Max Diode Forward Current
(1)
Diode Forward Voltage
Note: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%
VDD
ton
Switching
Test Circuit
RD
VIN
VOUT
D
Switching
Waveforms
td(on)
RG
tr
td(off)
tf
90 %
90%
Output, VOUT
VGEN
toff
10%
10%
INVERTED
DUT
G
90%
50%
S
Input, VIN
50%
10%
PULSE WIDTH
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Document Number 74573
17-Dec-01
GFU30N03
Vishay Semiconductor
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
80
60
VGS = 10V
5.0V
VDS = 10V
50
4.5V
6.0V
60
ID -- Drain Current (A)
ID -- Drain Source Current (A)
70
4.0V
50
40
3.5V
30
20
VGS = 3.0V
40
30
20
--55°C
TJ = 125°C
10
10
0
25°C
0
0
1
2
3
4
5
1
2
3
4
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage vs.
Temperature
Fig. 4 – On-Resistance vs.
Drain Current
2.0
5
0.035
0.03
1.8
RDS(ON) -- On-Resistance (Ω)
VGS(th) -- Threshold Voltage (V)
ID = 250µA
1.6
1.4
1.2
1
0.8
0.6
--50
0.025
VGS = 4.5V
0.02
0.015
VGS = 10V
0.01
0.005
0
--25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
ID -- Drain Current (A)
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance vs.
Junction Temperature
1.6
RDS(ON) -- On-Resistance
(Normalized)
VGS = 10V
ID = 20A
1.4
1.2
1
0.8
0.6
--50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (°C)
Document Number 74573
17-Dec-01
www.vishay.com
3
GFU30N03
Vishay Semiconductor
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
10
0.05
VDS = 15V
ID = 20A
VGS -- Gate-to-Source Voltage (V)
RDS(ON) -- On-Resistance (Ω)
ID = 20A
0.04
0.03
TJ = 125°C
0.02
25°C
0.01
0
8
6
4
2
0
2
4
6
8
10
0
10
15
20
25
30
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 8 – Capacitance
Fig. 9 – Source-Drain Diode
Forward Voltage
35
100
2500
VGS = 0V
f = 1MHZ
VGS = 0V
2000
Ciss
IS -- Source Current (A)
C -- Capacitance (pF)
5
1500
1000
500
10
TJ = 125°C
1
25°C
0.1
--55°C
Coss
Crss
0
0.01
0
5
10
15
20
VDS -- Drain-to-Source Voltage (V)
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4
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD -- Source-to-Drain Voltage (V)
Document Number 74573
17-Dec-01
GFU30N03
Vishay Semiconductor
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
Fig. 11 – Transient Thermal
Impedance
ID = 250µA
42
RθJA (norm) -- Normalized Thermal
Impedance
BVDSS -- Breakdown Voltage (V)
43
41
40
39
38
37
36
--50
--25
0
25
50
75
100
125
1. Duty Cycle, D = t1/t2
2. RθJA(t) = RθJA(norm) *RθJA
3. RθJA = 2.0°C/W
4. TJ -- TA = PDM* RθJA(t)
150
Pulse Duration (sec.)
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
Fig. 13 – Maximum Safe Operating Area
1000
1000
ID -- Drain Current (A)
800
600
400
0.001
0.01
0.1
1
10
0µ
s
1m
s
10
m
10
RDS(ON) Limit
s
DC
VGS = 10V
Single Pulse
RθJC = 2.0°C/W
TA = 25°C
200
0
0.0001
10
100
1
0.1
1
10
100
VDS -- Drain-Source Voltage (V)
Document Number 74573
17-Dec-01
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