Radiometrically Tested AlInGaP II LED Lamps for Sensor-Based Applications Technical Data SunPower Series Precision Optical Performance HLMP-ED80-xxxxx Features Applications • Characterized by Radiometric Intensity • High Optical Power Output • Extremely Long Useful Life • Low Power Consumption • Well Defined Spatial Radiation Patterns • 639 nm PEAK Red Color • 30° Viewing Angle • High Operating Temperature: TjLED = +130°C • Superior Resistance to Moisture • Suitable for Outdoor Use • Photo Sensor Stimulus • Infrared Emitter Replacement • Solid State Optical Mouse Sensors • Surface Imaging Sensors • Optical Position and Motion Sensors • Human Interface Devices • Computer Printer Dot Quality Control • Battery Powered Systems Benefits • Radiometric LED Characterization Decreases System Variability • Improved System Reliability • Visual Styling • Visible Color for Improved Application Safety • On / Off Indication • Suitable for a Variety of Sensor-Based Applications Description Radiometrically Tested Precision Optical Performance AlInGaP II (aluminum indium gallium phosphide) LEDs offer increased sensor-based application design flexibility. High-resolution radiometric intensity bins (mW/sr) enable customers to precisely match LED lamp performance with sensor functionality. Visible LEDs offer new styling alternatives — light can be leveraged to develop more attractive products. In comparison to invisible infrared sources, safety concerns are significantly improved by the human autonomic pupil response and reflexive movement away from bright light. Visible LEDs further indidcate system on / off status. The AlInGaP II technology provides extremely stable light output over very long periods of time, with low power consumption. These lamps are made with an advanced optical grade epoxy system offering superior high temperature and moisture resistance performance in outdoor systems. The epoxy contains both uv-a and uv-b inhibitors to reduce the effects of long term exposure to direct sunlight. Please contact your Agilent Technologies Representative for more information and design for manufacture advice. Application Brief I-024 Pulsed Operating Ranges for AlInGaP LEDs vs. Projected Long Term Light Output Performance and other application information is available at www.agilent.com/go/led_lamps. 2 Device Selection Guide Part Number HLMP-ED80-K0T00 HLMP-ED80-K0000 Minimum Radiometric Intensity (mW/Sr) at 20 mA 7.2 7.2 Package Dimensions 5.00 ± 0.20 (0.197 ± 0.008) 8.71 ± 0.20 (0.343 ± 0.008 1.14 ± 0.20 (0.045 ± 0.008) 2.35 (0.093) MAX. 31.60 (1.244) MIN. 0.70 (0.028) MAX. CATHODE LEAD 1.00 MIN. (0.039) CATHODE FLAT 0.50 ± 0.10 SQ. TYP. (0.020 ± 0.004) 5.80 ± 0.20 (0.228 ± 0.008) 2.54 ± 0.38 (0.100 ± 0.015) Note: All dimensions are in mm (inches). Maximum Forward Voltage (V) at 20 mA 2.6 2.4 3 Part Numbering System HLMP - x x x x - x x x xx Mechanical Option 00: Bulk VF Bin Selections 0: Maximum VF 2.4 V T: Maximum VF 2.6 V Maximum Intensity Bin 0: No maximum Iv bin limit Minimum Intensity Bin Refer to device selection guide Color D: 630 nm red Package E: T-1 3/4 (5 mm) round lamp Absolute Maximum Ratings at TA = 25°C DC Forward Current[1,2,3] ............................................................ 50 mA Peak Pulsed Forward Current[2,3] .............................................. 100 mA Average Forward Current ............................................................ 30 mA Reverse Voltage (I R = 100 µA) ......................................................... 5 V LED Junction Temperature .......................................................... 130°C Operating Temperature .............................................. –40°C to +100°C Storage Temperature .................................................. –40°C to +120°C Dip/Drag Solder Temperature ................................ 260°C for 6 seconds Through-the-Wave Preheat Temperature ..................................... 145°C Through-the-Wave Solder Temperature ................. 245°C for 3 seconds [1.59 mm (0.060 in.) below seating plane] Notes: 1. Derate linearly as shown in Figure 4. 2. For long term performance with minimal light output degradation, drive currents between 10 mA and 30 mA are recommended. For more information on recommended drive conditions, please refer to HP Application Brief I-024 (5966-3087E). 3. Please contact your Agilent sales representative about operating currents below 10 mA. 4 Electrical/Optical Characteristics at TA = 25°C Parameter Forward Voltage ED80-xx0xx ED80-xxTxx Reverse Voltage Peak Wavelength Symbol Min. Typ. Max. Units 2.40 2.60 V IF = 20 mA 5 2.00 2.35 20 V IR = 100 µA Peak of Wavelength of Spectral Distribution at IF = 20 mA VF VR λ PEAK 639 nm λd ∆λ1/2 630 17 nm nm Speed of Response τs 20 ns Capacitance Thermal Resistance C RΘJ-PIN 40 240 pF °C/W Luminous Efficacy[5] ηv 155 lm/W Viewing Angle[2] Radiometric Intensity 2 θ1/2 Ie Dominant Wavelength[1] Spectral Halfwidth 30 7.23 Deg. mW/sr 50.50 Test Conditions Wavelength Width at Spectral Distribution 1/2 Power Point at IF = 20 mA s Exponential Time Constant, e-t/τ VF = 0, f = 1 MHz LED Junction-to-Cathode Lead Emitted Luminous Power/Emitted Radiant Power at IF = 20 mA Emitted Radiant Power at IF = 20 mA Notes: 1. Dominant Wavelength, λd, is derived from the CIE Chromaticity Diagram referenced to Illuminant E. 2. θ 1/2 is the off-axis angle where the luminous intensity is one half the on-axis intensity. 3. The radiometric intensity is measured on the mechanical axis of the lamp package. 4. The optical axis is closely aligned with the package mechanical axis. 5. The luminous intensity, Iv, in candelas, may be found from the equation I v = Ieηv, where Ie is the radiometric intensity in watts per steradian and ηv is the luminous efficacy in lumens/watt. 100 1.0 80 RED CURRENT – mA RELATIVE INTENSITY 90 0.5 70 RED 60 50 40 30 20 10 0 550 600 650 WAVELENGTH – nm Figure 1. Relative Intensity vs. Peak Wavelength. 700 0 1.0 1.5 2.0 2.5 3.0 VF – FORWARD VOLTAGE – V Figure 2a. Forward Current vs. Forward Voltage for Option -xx0xx. 5 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2.5 IF – FORWARD CURRENT – mA RELATIVE RADIOMETRIC INTENSITY (NORMALIZED AT 20 mA) FORWARD CURRENT 50 2.0 1.5 1.0 0.5 0 40 RθJA = 585° C/W 30 RθJA = 780° C/W 20 10 0 0 FORWARD VOLTAGE – V 10 20 30 40 50 0 Figure 3. Relative Luminous Intensity vs. Forward Current. 1.00 20 40 60 80 100 TA – AMBIENT TEMPERATURE – °C IF – DC FORWARD CURRENT – mA Figure 2b. Forward Current vs. Forward Voltage for Option -xxTxx. NORMALIZED RADIOMETRIC INTENSITY 50 Figure 4. Maximum Forward Current vs. Ambient Temperature. Derating Based on TJMAX = 130°C. Radiometric Intensity Bin Limits (mW/sr at 20 mA) 0.90 0.80 0.70 Bin ID Min. Max. 0.60 K 8.5 10.2 L 10.2 12.2 0.30 M 12.2 14.7 0.20 N 14.7 17.6 P 17.6 21.2 Q 21.2 25.4 R 25.4 30.5 S 30.5 36.5 T 36.5 43.9 0.50 0.40 0.10 0 -25 -20 -15 -10 -5 0 5 10 15 ANGULAR DISPLACEMENT – DEGREES Figure 5. Representative Spatial Radiation Pattern for 30° Viewing Angle Lamps. 20 25 Notes: 1. Tolerance for each bin will be ± 15%. 2. Bin categories are established for classification of products. Products may not be available in all bin categories. www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2002 Agilent Technologies, Inc. Obsoletes 5988-7360EN September 18, 2002 5988-7916EN