Data Sheet No. PD60161-O IR2108(4) (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with HIN input Low side output out of phase with LIN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084) Part Lower di/dt gate driver for better noise immunity 2106 14-Lead SOIC IR21084S 8-Lead SOIC IR2108S 14-Lead PDIP IR21084 8-Lead PDIP IR2108 2106//2108//2109/2304 Feature Comparison 21064 2108 21084 2109 21094 Description Packages Input logic Crossconduction prevention logic Dead-Time HIN/LIN no none HIN/LIN yes Internal 540ns Programmable 0.54~5 µs Ground Pins COM VSS/COM COM VSS/COM COM VSS/COM Ton/Toff 220/200 220/200 The IR2108(4)(S) are high voltage, high Internal 540ns IN/SD yes 750/200 speed power MOSFET and IGBT drivers with Programmable 0.54~5 µs yes 160/140 HIN/LIN Internal 100ns dependent high and low side referenced 2304 COM output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD up to 600V HO IR2108 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com VCC V CC VB HIN HIN VS LIN LIN IR21084 TO LOAD DT V SS RDT V SS COM LO 1 IR2108(4) (S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VB High side floating absolute voltage VS Min. Max. -0.3 625 Units High side floating supply offset voltage VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC + 0.3 DT Programmable dead-time pin voltage (IR21084 only) VSS - 0.3 VCC + 0.3 VIN Logic input voltage (HIN & LIN ) VSS - 0.3 VCC + 0.3 Logic ground (IR21084 only) VCC - 25 VCC + 0.3 VSS dVS/dt PD RthJA Allowable offset supply voltage transient Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient — 50 (8 lead PDIP) — 1.0 (8 lead SOIC) — 0.625 (14 lead PDIP) — 1.6 (14 lead SOIC) — 1.0 (8 lead PDIP) — 125 (8 lead SOIC) — 200 (14 lead PDIP) — 75 (14 lead SOIC) — 120 TJ Junction temperature — 150 TS Storage temperature -50 150 TL Lead temperature (soldering, 10 seconds) — 300 V V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential. Symbol Min. Max. VB High side floating supply absolute voltage Definition VS + 10 VS + 20 VS High side floating supply offset voltage Note 1 600 VB VHO High side floating output voltage VS VCC Low side and logic fixed supply voltage 10 20 VLO Low side output voltage 0 VCC VIN Logic input voltage COM VCC DT Programmable dead-time pin voltage (IR21084 only) VSS IR2108 IR21084 TA VSS VCC VSS VCC Logic ground (IR21084 only) -5 5 Ambient temperature -40 125 Units V °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2108(4) (S) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions ton toff Turn-on propagation delay — 220 300 Turn-off propagation delay — 200 280 MT Delay matching | ton - toff | — 0 30 tr Turn-on rise time — 150 220 tf Turn-off fall time — 50 80 Deadtime: LO turn-off to HO turn-on(DTLO-HO) & HO turn-off to LO turn-on (DTHO-LO) 400 4 540 5 680 6 Deadtime matching = | DTLO-HO - DTHO-LO | — 0 60 — 0 600 DT MDT VS = 0V VS = 0V or 600V nsec VS = 0V VS = 0V usec nsec RDT= 0 RDT = 200k (IR21084) RDT=0 RDT = 200k (IR21084) Static Electrical Characteristics VBIAS (VCC, VBS ) = 15V, VSS = COM, DT= V SS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO. Symbol Definition Min. Typ. Max. Units Test Conditions VIH Logic “1” input voltage for HIN & logic “0” for LIN 2.9 — — VCC = 10V to 20V VIL Logic “0” input voltage for HIN & logic “1” for LIN — — 0.8 VCC = 10V to 20V VOH High level output voltage, VBIAS - VO — 0.8 1.4 VOL Low level output voltage, VO — 0.3 0.6 ILK Offset supply leakage current — — 50 IQBS Quiescent VBS supply current 20 60 150 IQCC Quiescent VCC supply current 0.4 1.0 1.6 IIN+ Logic “1” input bias current — 5 20 IIN- Logic “0” input bias current — 1 2 VCCUV+ VCC and VBS supply undervoltage positive going 8.0 8.9 9.8 VBSUV+ threshold VCCUV- VCC and VBS supply undervoltage negative going 7.4 8.2 9.0 VBSUV- threshold VCCUVH Hysteresis 0.3 0.7 — IO+ Output high short circuit pulsed current 120 200 — IO- Output low short circuit pulsed current 250 350 — V IO = 20 mA IO = 20 mA VB = VS = 600V µA mA VIN = 0V or 5V VIN = 0V or 5V RDT=0 HIN = 5V, LIN = 0V µA HIN = 0V, LIN = 5V V VBSUVH www.irf.com mA VO = 0V, PW ≤ 10 µs VO = 15V, PW ≤ 10 µs 3 IR2108(4) (S) Functional Block Diagram VB UV DETECT 2108 HO R HV LEVEL SHIFTER VSS/COM LEVEL SHIFT HIN DT R PULSE FILTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION UV DETECT +5V VSS/COM LEVEL SHIFT LIN LO DELAY COM VSS VB 21084 UV DETECT HO R VSS/COM LEVEL SHIFT HIN HV LEVEL SHIFTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION DT UV DETECT +5V LIN R PULSE FILTER VSS/COM LEVEL SHIFT DELAY LO COM VSS 4 www.irf.com IR2108(4) (S) Lead Definitions Symbol Description HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and VSS for IR21084) LIN Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108 DT Programmable dead-time lead, referenced to VSS. (IR21084 only) VSS Logic Ground (21084 only) VB High side floating supply HO High side gate driver output VS High side floating supply return and VSS for IR21084) VCC Low side and logic fixed supply LO Low side gate driver output COM Low side return Lead Assignments VCC VB 8 1 VCC VB 8 HIN HO 7 2 HIN HO 7 3 LIN VS 6 LIN VS 6 4 COM LO 5 COM LO 5 1 2 www.irf.com 3 4 8 Lead PDIP 8 Lead SOIC IR2108 IR2108S 1 VCC 2 HIN VB 14 14 1 VCC 13 2 HIN VB 13 12 11 3 LIN HO 12 3 LIN HO 4 DT VS 11 4 DT VS 5 VSS 10 5 VSS 10 6 COM 9 6 COM 9 7 LO 8 7 LO 8 14 Lead PDIP 14 Lead SOIC IR21084 IR21084S 5 IR2108(4) (S) HIN LIN LIN HO 50% 50% tr toff LO ton Figure 1. Input/Output Timing Diagram 90% tf 90% 10% LO 10% 50% 50% HIN ton toff tr 90% HO HIN LIN 50% 10% tf 90% 10% 50% Figure 2. Switching Time Waveform Definitions 90% HO LO DTLO-HO 10% DT HO-LO 90% 10% MDT= DTLO-HO - DT HO-LO Figure 3. Deadtime Waveform Definitions 6 www.irf.com IR2108(4) (S) Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A FOOTPRINT 6 8 7 6 5 H E 1 6X 2 3 0.25 [.010] 4 e A 6.46 [.255] 3X 1.27 [.050] e1 0.25 [.010] A1 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 .1574 3.80 4.00 E .1497 e .050 BASIC e1 MAX 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 8X L 8X c 7 C A B NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 8-Lead SOIC www.irf.com MIN .0532 K x 45° A C 8X b 8X 1.78 [.070] MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 01-6027 01-0021 11 (MS-012AA) 7 IR2108(4) (S) 14-Lead PDIP 14-Lead SOIC (narrow body) 01-6010 01-3002 03 (MS-001AC) 01-6019 01-3063 00 (MS-012AB) IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/13/2002 8 www.irf.com