J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. • • • • • • • http://onsemi.com N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 Ω Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Gate−Source Voltage VGS −25 Vdc Drain −Gate Voltage VDG −25 Vdc IG 10 mAdc 310 2.82 mW mW/°C Gate Current Total Device Dissipation 1 2 PD @ TA = 25°C Derate above 25°C Operating Junction Temp Range TJ 135 °C Storage Temperature Range Tstg −65 to +150 °C 3 CASE 29 TO−92 (TO−226) STYLE 5 MARKING DIAGRAM J110 YWW Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping† J110 TO−92 5000 Units/Box J110RLRA TO−92 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 5 1 Publication Order Number: J110/D J110 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS −25 − Vdc IGSS − − −3.0 −200 nAdc (VDS = 5.0 Vdc, ID = 1.0 µAdc) VGS(off) −0.5 −4.0 Vdc (VDS 0.1 V, VGS = 0 V) RDS(on) − 18 IDSS 10 − mAdc Drain−Gate and Source−Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) − 85 pF Drain−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) − 15 pF Source−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) − 15 pF STATIC CHARACTERISTICS (IG = −1.0 µAdc) Gate −Source Breakdown Voltage Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) Gate−Source Cutoff Voltage Drain Source On−Resistance Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) DYNAMIC CHARACTERISTICS 1. Pulse Width = 300 µs, Duty Cycle = 3.0%. Crss, FEEDBACK CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 80 60 VDS = 0 V 5V 40 10 V 20 0 0 −4 −12 −8 −16 100 80 60 40 VDS = 0 V 20 5V 10 V 0 −20 −4 0 −8 −12 −16 VGS, GATE−SOURCE VOLTAGE (VOLTS) VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Common Source Input Capacitance versus Gate−Source Voltage Figure 2. Common Source Reverse Feedback Capacitance versus Gate−Source Voltage 100 16 VGS = 0 V ID, DRAIN CURRENT (mA) 90 RDS(on), DRAIN−SOURCE ON−RESISTANCE (OHMS) −20 12 RDS(on): VDS ≤ 0.1 V RDS(on): VGS = 0 V 8 VGS(off): VDS = 5 V VGS(off): ID = 1.0 A 4 −0.25 V 80 70 60 −0.5 V 50 40 −0.75 V 30 −1 V 20 −1.25 V 10 0 0 0 −1 −2 −3 −4 −5 −6 −7 0 −8 2 4 6 8 10 12 14 16 18 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance versus Gate−Source Cutoff Voltage Figure 4. Output Characteristic VGS(off) = −2.0 V http://onsemi.com 2 20 J110 200 300 VGS = 0 V ID, DRAIN CURRENT (mA) 140 120 −1 V 100 80 −1.5 V 60 40 −2 V 20 −2.5 V 0 0 2 4 6 10 8 12 14 16 VGS = 0 V 270 −0.5 V 160 18 240 −0.5 V 210 −1 V 180 −1.5 V 150 120 −2 V 90 60 −2.5 V 30 −3 V 0 0 20 4 2 6 8 10 12 14 16 18 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristic VGS(off) = −3.0 V Figure 6. Output Characteristic VGS(off) = −4.0 V 400 VGS = 0 V 360 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) 180 −0.5 V 320 −1 V 280 240 −1.5 V 200 −2 V 160 −2.5 V 120 −3 V 80 −3.5 V 40 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 7. Output Characteristic VGS(off) = −5.0 V http://onsemi.com 3 20 20 J110 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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