INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 September 2001. MIL-PRF-19500/461D 14 June 2001 SUPERSEDING MIL-PRF-19500/461C 29 May 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N6211, 2N6212, 2N6213, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-voltage. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (TO-66), and figure 2, JANHC and JANKC (die) dimensions. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C. Type 2N6211 2N6212 2N6213 (1) (2) PT (1) TA = +25°C W PT (2) TC = +25°C W VCBO VCEO VEBO IB IC TOP and TSTG RθJC (max) ZθJX V dc V dc V dc A dc A dc °C °C/W °C/W 3.0 3.0 3.0 35 35 35 275 350 400 225 300 350 6.0 6.0 6.0 1.0 1.0 1.0 2.0 2.0 2.0 -65 to +200 -65 to +200 -65 to +200 5.0 5.0 5.0 1.75 1.75 1.75 Derate linearly at 17.1 mW/°C for TA > +25°C. Derate linearly at 200 mW/°C for TC > +25°C. 1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25°C. hFE1 (1) VCE = 5 V dc IC = 1 A dc Minimum Maximum 30 175 VCE(SAT) (1) IC = 1.0 A dc IB = -0.125 A dc 2N6211 2N6212 2N6213 V dc V dc V dc 1.4 1.6 2.0 Cobo 100 kHz ≤ f ≤ 1 MHz VCB = 10 V dc IE = 0 pF |hfe| f = 5 MHz IC = 0.2 A dc VCE = 10 V dc 220 4 20 Pulse response ton toff µs µs 0.6 3.1 (1) Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/461D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.4). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (T0-66 ) and 2 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 2 MIL-PRF-19500/461D Dimensions Ltr CH LD CD PS PS1 HT LL L1 MHD MHS HR HR1 S Inches Millimeters Min Max 6.35 8.64 0.71 0.86 11.94 12.70 4.83 5.33 2.36 2.72 Min .250 .028 .470 .190 .093 Max .340 .034 .500 .210 .107 .050 .360 .075 .500 .050 .152 .962 .350 .145 .590 .142 .958 .115 .570 1.27 9.14 3.61 24.33 2.92 14.48 1.91 12.70 1.27 3.86 24.43 8.89 3.68 14.99 Notes 7,9 2 3 3 2, 5 7 4 3 NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. 2. Body contour is optional within zone defined by CD. 3. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 4. Within this zone the lead diameter may vary to allow for lead finishes and irregularities. 5. HT dimension does not include sealing flanges. 6. The seating plane of header shall be flat within .001 inch (0.025 mm), concave to .004 inch (0.101 mm), convex inside a .520 inch (13.20 mm) diameter circle on the center of the header, and flat within .001 inch (0.025 mm), concave to .006 inch (0.152 mm), convex overall. 7. Both terminals. 8. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Diameter is uncontrolled in L1. 10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions. 3 MIL-PRF-19500/461D Dimensions Ltr A B Inches Min .119 .119 Millimeters Min Max 3.02 3.18 3.02 3.18 Max .125 .125 Notes NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The physical characteristics of the die are: Thickness: .006 inch (0.15 mm) to .012 inch (0.30 mm). Top metal: Aluminum 50,000 Å nominal, 37,500 Å minimum. Back metal: Gold 3,000 Å nominal. Back side: Collector. Bonding pad: B = .015 inch (0.38 mm) x .072 inch (1.83 mm). E = .015 inch (0.38 mm) x .060 inch (1.52 mm). 4. Junctions passivated with thermal silicon dioxide. FIGURE 2. JANHC and JANKC (A-version) die dimensions. 4 MIL-PRF-19500/461D 3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c 9 11 12 13 Measurement JANS level JANTX and JANTXV levels Thermal impedance Thermal impedance (see 4.3.4) (see 4.3.4) hFE1 and ICEX hFE1 and ICEX hFE1 and ICEX; ICEX = ±100 percent of initial value or 5 µA dc, whichever is greater. hFE1 = ±15 percent. Burn-in (see 4.3.1) Burn-in (see 4.3.1) Subgroups 2 and 3 of table I herein; Subgroup 2 of table I herein; ∆ICEX = 100 percent of initial value or 5 µA ∆ICEX = 100 percent of initial value or 0.1 dc, whichever is greater. mA dc, whichever is greater. ∆hFE1 = ±15 percent ∆hFE1 = ±25 percent. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition B. TA = room ambient as defined in the general requirements in 4.5 of MIL-STD-750; V CB ≥ 20 V dc, PT = 3.0 W. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 JANHC and JANKC screening. Screening of die shall be in accordance with MIL-PRF-19500. Test limits and conditions shall be chosen by the supplier to demonstrate compliance with electrical characteristics specified by detail specification. Probe test shall be performed 100 percent by the supplier on the entire die lot. 4.3.3 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500. 5 MIL-PRF-19500/461D 4.3.4. Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IM measurement current -------------- 10 mA. b. IH forward heating current ----------- 1.2 mA (min). c. tH heating time -------------------------- 100 ms. d. tmd measurement delay time ------- 50-60 µs max. e. VCE collector-emitter voltage ------- 20 V dc minimum The maximum limit for ZθJX under these test conditions are ZθJX (max) = 1.75°C/W. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB ≥ 10 V dc, forced air cooling on the devices shall be permitted only during the toff time. B5 1027 VCE ≥ 10 V dc, TA ≤ +125°C, adjust TA and power to achieve a TJ ≥ +275°C, t = 96 hours. PT = 3 W minimum. B6 3131 See 4.5.2. 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method B3 1037 Conditions VCB ≥ 10 V dc, forced air cooling on the devices shall be permitted only during the toff time. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 seconds. C6 1037 VCB ≥ 10 V dc, forced air cooling on the devices shall be permitted only during the toff time. 6 MIL-PRF-19500/461D 4.4.4. Group E Inspection. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein must be performed to maintain qualification. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power applications shall be 1.0 A dc. b. Collector to emitter voltage magnitude shall be ≥ 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit shall be RθJC = 5.0°C/W. 7 MIL-PRF-19500/461D TABLE I. Group A inspection . Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 n = 45 devices, c = 0 3011 Bias condition D, IC = 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f = 30-60 Hz) Subgroup 2 Collector to emitter breakdown voltage V(BR)CEO 2N6211 2N6212 2N6213 Collector to emitter breakdown voltage 225 300 350 3011 Bias condition D, IC = 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f = 30-60 Hz) RBE = 50 Ω Collector to emitter breakdown voltage 250 325 375 3011 Bias condition D, IC = 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f = 30-60 Hz) RBE = 50 Ω, VBE = 1.5 V dc Collector to emitter cutoff current 2N6211 2N6212 2N6213 See footnote at end of table. µA dc V dc V dc V dc 10 V(BR)CEX 2N6211 2N6212 2N6213 Collector to emitter cutoff current 10 V(BR)CER 2N6211 2N6212 2N6213 V dc V dc V dc 275 350 400 µA dc V dc V dc V dc 3041 Bias condition C; VCE = 150 V dc ICEO 5.0 mA dc 3041 Bias condition C; VBE = 1.5 V dc ICEX1 0.5 mA dc VCE = 250 V dc VCE = 315 V dc VCE = 360 V dc 8 MIL-PRF-19500/461D TABLE I. Group A inspection - continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 2 - Continued. Emitter to base cutoff current 3061 Bias condition D; VEB = 6 V dc IEBO 0.5 mA dc Collector to base cutoff current 2N6211 2N6212 2N6213 3036 Bias condition D ICBO 15 mA dc Forward-current transfer ratio 2N6211 2N6212 2N6213 3076 Forward-current transfer ratio 2N6211 2N6212 2N6213 3076 Collector to emitter saturated voltage 2N6211 2N6212 2N6213 3071 Base to emitter saturated voltage 3066 VCB = 275 V dc VCB = 350 V dc VCB = 400 V dc IC = 1 A dc, pulsed (see 4.5.1) hFE1 10 100 30 30 30 175 175 150 VCE = 2.8 V dc VCE = 3.2 V dc VCE = 4.0 V dc VCE = 5 V dc, IC = 1 A dc, pulsed (see 4.5.1) IC = 1 A dc, IB = 0.125 A dc, pulsed (see 4.5.1) Test condition A, IC = 1 A dc, IB = 0.125 A dc, pulsed (see 4.5.1) hFE2 VCE(sat) VBE(sat) 1.4 1.6 2.0 V dc V dc V dc 1.4 V dc 5 mA dc Subgroup 3 High temperature operation: Collector to emitter cutoff current 2N6211 2N6212 2N6213 TA = +100°C 3041 ICEX2 VCE = 250 V dc VCE = 315 V dc VCE = 360 V dc Low temperature operation: Forward-current transfer ratio Bias condition A, VBE = 1.5 V dc TA = -55°C 3076 VCE = 5.0 V dc, IC = 1 A dc, pulsed (see 4.5.1) See footnote at end of table. 9 hFE3 10 MIL-PRF-19500/461D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 3 herein. Min Max Subgroup 4 Pulse response Turn-on time VCC = 200 V dc ±10 V dc, IC =1 A dc, IB1 = -0.125 A dc ton 0.6 µs Turn-off time VCC = 200 V dc ±10 V dc, IC =1 A dc, IB1 = -0.125 A dc; IB2 = 0.125 A dc toff 3.1 µs Small-signal short-circuit forward-current transfer ratio 3306 VCE = 10 V dc, IC = 0.2 A dc, f = 5 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 3051 TC = +25°C, t = 1 s, 1 cycle (see figure 4) Subgroup 5 Safe operating area (continuous dc) Test 1 (all device types) IC = 2.0 A dc, VCE = 17.5 V dc Test 2 (all device types) IC = 0.875 A dc, VCE = 40 V dc Test 3 2N6211 only IC = 0.034 A dc, VCE = 225 V dc Test 4 2N6212 only IC = 0.02 A dc, VCE = 300 V dc Test 5 2N6213 only IC = 0.015 A dc, VCE = 350 V dc Electrical measurements See table I, group A, subgroup 2 See footnote at end of table. 10 4 20 220 pF MIL-PRF-19500/461D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions 3053 Load condition C (unclamped inductive load) (see figure 5) TC = +25°C, duty cycle ≤ 10 percent tp ≈ 15 ms, RBB1 = 20 Ω, VBB1 = 10 V dc maximum, RBB2 = 20 Ω, VBB2 = 1.5 V dc, VCC = 10 V dc, IC = 2 A dc, L = 25 µH, RS = 0.1Ω Subgroup 5 - Continued. Safe operating area (switching) Test 1 tp ≈ 15 ms, RBB1 = 50 Ω, VBB1 = 10 V dc maximum, RBB2 = 20 Ω, VBB2 = 1.5 V dc, VCC = 10 V dc, IC = 0.25 A dc, L = 3.0 mH, RS = 1.0 Ω Test 2 Electrical measurements Safe operating area (switching) 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 Electrical measurements 1/ See table I, group A, subgroup 2 3053 Load condition B, (clamped inductive load) see figure 6, TC = +25°C, duty cycle ≤ 10 percent, tp ≈ 15 ms, RS = 0.1 Ω, RBB1 = 20 Ω, RBB2 = 20 Ω, RBB2 = 20 Ω, VBB1 = 10 V dc maximum, VBB2 = 1.5 V, IC = 2.0 A dc (clamped voltage must be reached) VCC = 225 V dc, RL ≤ 112.5 Ω VCC = 300 V dc, RL ≤ 150 Ω VCC = 350 V dc, RL ≤ 175 Ω, L = 250µH, CR = 1N1190A Clamp voltage = 225, +0, -5 V dc Clamp voltage = 300, +0, -5 V dc Clamp voltage = 350, +0, -5 V dc See table I, group A, subgroup 2 For sampling plan see MIL-PRF-19500. 11 Min Max MIL-PRF-19500/461D TABLE II. Group E inspection (all quality levels) - for qualification only. MIL-STD-750 Inspection Method Conditions Subgroup 1 Qualification 12 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements Intermittent operation life: VCB = 10 V dc, 6,000 cycles See group A, subgroup 2 herein. Subgroup 3 Not applicable Subgroup 4 Thermal resistance 3131 22 devices c=0 See 4.5.2 Subgroup 5 Not applicable 12 MIL-PRF-19500/461D NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 20 ns, duty cycle ≤ 2 percent, generator source impedance shall be 50 Ω; pulse width = 20 µs. 2. Output sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 50 pF, rise time ≤ 20 ns. FIGURE 3. Pulse response test circuit. 13 MIL-PRF-19500/461D FIGURE 4. Maximum safe operating graph (continuous dc). 14 MIL-PRF-19500/461D FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 15 MIL-PRF-19500/461D FIGURE 6. Safe operating area for switching between saturation and cutoff (clamped inductive load). 16 MIL-PRF-19500/461D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). 6.3 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example, JANHCA2N6211) will be identified on the QML. JANC ordering information PIN Manufacturer 33178 2N6211 JANHCA2N6211 JANKCA2N6211 JANHCA2N6212 JANKCA2N6212 JANHCA2N6213 JANKCA2N6213 2N6212 2N6213 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. 17 MIL-PRF-19500/461D Custodians: Army - CR Navy - NW Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA- CC (Project 5961-2389) Reviewing activities: Army - AV Air Force - 19 18 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/461D 2. DOCUMENT DATE 14 June 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N6211, 2N6212, 2N6213, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43213-1199 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99