The document and process conversion measures necessary to comply with this revision shall be completed by 30 November 1999 INCH-POUND MIL-PRF-19500/526D 30 August 1999 SUPERSEDING MIL-S-19500/526C 20 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3879 JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-66). 1.3 Maximum ratings. (TA = +25°C, unless otherwise specified). PT 1/ TC = +25°C VCBO VCEO VEBO IB IC TJ and TSTG RθJC W V dc V dc V dc A dc A dc °C/W °C/W 35 120 75 7 5 7 -65 to +200 5 1/ Derate linearly 200 mW/°C for TC > +25°C. 1.4 Primary electrical characteristics. hFE1 1/ hFE2 1/ VBE(SAT)1 VCE = 5.0 V dc VCE = 5.0 V dc IC = 4.0 V dc IC = 0.5 A dc IB = 4.0 A dc IB = 0.4 A dc V dc Min Max 40 20 80 2.0 VCE(SAT)1 Cobo |hfe| VCE = 10 V dc IC = 4.0 V dc VCB = 10 V dc IC = 500 mA dc IB = 0.4 A dc IE = 0 0.1 MHz ≤ f ≤ 1 MHz f = 10 MHz V dc pF 1.2 175 4 20 Switching (see table I and figure 2 herein) ton toff µs µs 0.44 1.2 1/ Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/526D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical requirements shall be the subgroups specified in table I herein. 2 MIL-PRF-19500/526D FIGURE 1. Physical dimensions (TO-66). 3 MIL-PRF-19500/526D Dimensions Symbol Notes Inches Millimeters Min Max Min Max CH 0.250 0.340 6.35 8.64 LD 0.028 0.034 0.71 0.86 3,7,10 CD 0.470 0.500 11.94 12.70 3,10 PS 0.190 0.210 4.83 5.33 4 PS1 0.093 0.107 2.36 2.72 4 HT 0.050 0.075 1.27 1.91 LL 0.360 0.500 9.14 12.70 3,9 1.27 9 7,10 0.050 L1 MHD 0.142 0.152 3.61 3.86 MHS 0.958 0.962 24.33 24.43 HR 0.350 8.89 HR1 0.115 0.145 2.92 3.68 S 0.570 0.590 14.48 14.99 8 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Body contour is optional within zone defined by CD and PS1. 4. These dimensions should be measured at points 0.050 inch (1.27 mm) 0.055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Diameter is uncontrolled in L1. 10. In accordance with ANSI Y14.5M, diameters are equivalent to ∅x symbology. FIGURE 1. Physical dimensions - Continued. 4 MIL-PRF-19500/526D 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c 1/ 2/ Measurement JANTX and JANTXV levels Thermal impedance (see 4.5.3) 9 ICEX1 11 hFE2; ICEX1 12 See 4.3.1 15 ∆ICEX1 = 100 percent of initial value or 1 mA dc, whichever is greater. ∆hFE2 = ± 25 percent of initial value; subgroup 2 of table I herein. 1/ Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500 screen 3, prior to this thermal test. 2/ ZθJX is not required in screen 13 if already previously performed. 4.3.1 Power burn-in. Power burn-in conditions are as follows: TJ = +187.5°C, ±12.5°C; VCB ≥ +10 V dc; TA = room ambient as defined in the general requirements of MILSTD-750, paragraph 4.5. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. The following test conditions shall be used for ZθJX, group A inspection: ZθJX ≤ 5.0°C/W. a. IM measurement current ................................................................................ 1 to 10 mA. b. IH forward heating current.............................................................................. 0.5 A to 1.0 A. c. tH heating time ............................................................................................... 10 ms. d. tMD measurement delay time ......................................................................... 70 µs maximum. End-point electrical measurements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 5 MIL-PRF-19500/526D 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified. Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, TJ = 150°C min. No heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c=0 2 1039 The steady state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production, however, Group B shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA = +200°C. n = 22, c = 0 4.4.2.1 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.3.1 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup C2 C6 Method Condition 2036 Test condition A; weight = 10 pounds; t = 15 s.. Not applicable 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. RθJC (max) = 5°C/W. a. Collector current magnitude during power applications shall be 0.55 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature point shall be the case. d. Reference point temperature shall be +25°C ≤ TR +25°C ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. 6 MIL-PRF-19500/526D 4.5.3 Thermal impedance ZθJX measurements for screening. The ZθJX measurements shall be performed in accordance with MILSTD-750C, method 3161. The maximum limit (not to exceed the group A, subgroup 2 limit) for ZθJX in screening (table II of MIL-PRF19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. One hundred percent Safe Operating Area (SOA) testing may be performed in lieu of thermal impedance testing herein provided that the appropriate conditions of temperature, time current, and voltage to achieve die attach integrity are submitted to the qualifying activity. 4.5.3.1 Thermal impedance ZθJX measurements for initial qualification or requalification. The ZθJX measurements shall be performed in accordance with MIL-STD-750C, method 3161 (read and record data (ZθJX). ZθJX shall be supplied on one lot (500 pieces minimum) and a thermal response curve shall be submitted. Twenty-two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. 7 MIL-PRF-19500/526D TABLE I. Group A inspection. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Max Subgroup 1 2/ Visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 Solderability 3/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ solvent 1022 n = 15 devices, c = 0 Temp cycling 3/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 1071 n = 22 devices, c = 0 Fine leak Gross leak Electrical measurements Bond strength 3/ Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs, n = 11 wires, c = 0 Subgroup 2 Breakdown voltage, collector to emitter 3011 Bias condition C; IC = 200 mA dc; pulsed (see 4.5.1) V(BR)CEO 75 V dc Collector to emitter cutoff current 3041 Bias condition D; VCE = 50 V dc ICEO 5 mA dc Collector to emitter cutoff current 3041 Bias condition A; VCE = 100 V dc; VBE = 1.5 V dc ICEX1 4 mA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 7 V dc IEBO 10 mA dc Collector to base cutoff current 3036 Bias condition D; VCB = 120 V dc ICBO 25 mA dc Base emitter voltage (nonsaturated) 3066 Test condition B; IC = 4.0 A dc; VCE = 2.0 V dc; pulsed (see 4.5.1) VBE 1.8 V dc Base emitter voltage (saturated) 3066 Test condition A; IC = 4.0 A dc; IB = 0.4 V dc; pulsed (see 4.5.1) VBE(SAT) 2.0 V dc Collector to emitter saturated voltage 3071 IC = 4.0 A dc; IB = 0.4 V dc; pulsed (see 4.5.1) VCE(SAT) 1.2 V dc See footnotes at end of table. 8 MIL-PRF-19500/526D TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Max Subgroup 2 continued Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 0.5 A dc; pulsed (see 4.5.1) hFE1 40 Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 4.0 A dc; pulsed (see 4.5.1) hFE2 20 80 Forward-current transfer ratio 3076 VCE = 2.0 V dc; IC = 4.0 A dc; pulsed (see 4.5.1) hFE3 12 100 Thermal impedance 3131 See 4.5.3 ZθJX 5.0 °C/W ICEX2 4.0 mA dc Subgroup 3 High temperature operation: Collector to emitter cutoff current TA = +150°C 3041 Low temperature operation: Forward-current transfer ratio Bias condition A; VCE = 100 V dc; VBE = 1.5 V dc TA = -55°C 3076 VCE = 5.0 V dc; IC = 0.5 A dc; pulsed (see 4.5.1) 3251 Test condition A except test circuit and pulse requirements in accordance with figure 2 herein. hFE4 10 Subgroup 4 Pulse response Turn-on time VCC = 30 V dc; IC = 4.0 A dc; IB = 0.4 A dc t(on) 0.44 µs Turn-off time VCC = 30 V dc; IC = 4.0 A dc; IB = -IB = 0.4 A dc t(off) 1.2 µs Magnitude of common emitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 500 mA dc; f = 10 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 0.1 MHz ≤ f ≤ 1.0 MHz Cobo See footnotes at end of table. 9 4 20 175 pF MIL-PRF-19500/526D TABLE I. Group A inspection - Continued. MIL-STD-750 Method Conditions Subgroup 5 Safe operating area (continuous dc) 3051 TC = +25°C; t = 1 s, 1 cycle; (see figure 3) Test 1 VCE = 5 V dc; IC = 7 A dc Test 2 VCE = 28 V dc; IC = 1.25 A dc Test 3 VCE = 40 V dc; IC = 500 mA dc Test 4 VCE = 75 V dc; IC = 100 mA dc Safe operating area (switching) 3053 Load condition C, (unclamped inductive load) (see figure 4) TC = +25°C; duty cycle ≤ 5 percent; RS = 0.1 ohm; tr = tf ≤ 2 µs Test 1 tp ≈ 50 µs (vary to obtain IC); RBB1 = 5.0 ohms; VBB1 = 10 V dc; RBB2 = 50 ohms; VBB2 = 4 V dc; IC = 4 A dc; L = 125 µH; VCC = 10 V dc; R of inductor = 0.1 ohm Test 2 tp ≈ 25 µs (vary to obtain IC); RBB1 = 5.0 ohms; VBB1 = 10 V dc; RBB2 = 50 ohms; VBB2 = 1.5 V dc; IC = 1 A dc; L = 250 µH; VCC = 10 V dc; R of inductor = 0.1 ohm Safe operating area (switching) Limits Symbol Inspection 1/ 3053 Load condition B; TA = +25°C; IC = 7 A dc; VCC = 45 V dc; Clamped voltage = 75 V dc, duty Cycle ≤ 5 percent; RBB1 = 5.0 ohms; VBB1 = 10 V dc; RBB2 = 50 ohms; VBB2 = -4 V dc; L = 250 µH; R of inductor = 0.1 ohm; RL = as required to limit IC. See footnotes at end of table. 10 Unit Min Max MIL-PRF-19500/526D TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. 3/ Separate samples may be used. 4/. Not required for laser marked devices. 5/ L = 5 mH (2 each Essex Stancor C-2688 in parallel 1A, 0.5 ohm, or equivalent (see 4.5.2). 11 Max MIL-PRF-19500/526D FIGURE 2. Switching time test circuits. 12 MIL-PRF-19500/526D FIGURE 3. Maximum safe operating graph (continuous dc). 13 MIL-PRF-19500/526D FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped load). 14 MIL-PRF-19500/526D 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.2.1). b. The lead finish as specified (see 3.4.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2076) Review activities: Air Force – 13, 19 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/526D 2. DOCUMENT DATE 990830 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N3879 JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99