600V 40A 0.110Ω
APT40N60B2CF
APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
COOLMOS
Power Semiconductors
T-MaxTM
• Ultra Low RDS(ON)
• Intrinsic Fast-Recovery Body Diode
• Low Miller Capacitance
• Extreme Low Reverse Recovery Charge
• Ultra Low Gate Charge, Qg
• Ideal For ZVS Applications
• Avalanche Energy Rated
• Popular T-MAX™ or TO-264 Package
TO-264
D
• Extreme dv/dt Rated
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT40N60B2CF(G)_LCF(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
40
Continuous Drain Current @ TC = 100°C
26
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
80
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)
80
V/ns
20
Amps
Avalanche Current
7
7
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
4
mJ
690
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
Volts
600
(VGS = 10V, ID = 20A)
0.110
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
4.2
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
3400
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
3
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
5-2005
BVDSS
Characteristic / Test Conditions
050-7236 Rev A
Symbol
APT40N60B2CF(G)_LCF(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
VGS = 10V
Gate-Source Charge
VDD = 300V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
ID = 40A @ 25°C
RG = 1.8Ω
6.4
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
725
Eoff
Turn-off Switching Energy
ID = 40A, RG = 5Ω
365
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
1195
Eoff
Turn-off Switching Energy
ID = 40A, RG = 5Ω
440
UNIT
pF
80
185
36
115
12
15
60
VDD = 380V
Fall Time
MAX
5040
1365
RESISTIVE SWITCHING
Turn-off Delay Time
tf
TYP
ID = 40A @ 25°C
Rise Time
td(off)
MIN
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
Pulsed Source Current
VSD
1
Diode Forward Voltage
Peak Diode Recovery
/dt
dv
/dt
(VGS = 0V, IS = -40A)
5
Reverse Recovery Time
t rr
Q rr
(IS = -40A, di/dt = 100A/µs)
Tj = 25°C
195
Tj = 125°C
290
Reverse Recovery Charge
Tj = 25°C
1.8
(IS = -40A, /dt = 100A/µs)
Tj = 125°C
3.5
Peak Recovery Current
Tj = 25°C
17
22
di
IRRM
80
(Body Diode)
2
di
(IS = -40A, /dt = 100A/µs)
MAX
40
Continuous Source Current (Body Diode)
ISM
dv
Characteristic / Test Conditions
Tj = 125°C
UNIT
Amps
2.4
Volts
40
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.30
31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.5
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
5-2005
050-7236 Rev A
0.9
0.25
0.20
0.3
0.10
t1
t2
0.05
0
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID40A di/dt ≤ 700A/µs VR ≤ 480V TJ ≤125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
UNIT
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
RC MODEL
0.0136
0.00308F
0.0289
0.00145F
0.0988
0.00948F
0.158
0.231F
Power
(watts)
TJ = -55°C
40
TJ = +25°C
TJ = +125°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
7V
30
6.5V
20
10
6V
5.5V
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.40
NORMALIZED TO
VGS = 10V @ 20A
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
1.15
0
10 20 30 40 50
60 70 80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
I = 20A
D
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2005
V
2.5
050-7236 Rev A
ID, DRAIN CURRENT (AMPERES)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
3.0
7.5V
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
0
60
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
VDS> ID(ON) x RDS(ON) MAX.
20
8V
70
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VGS = 15 &10 V
80
0
Case temperature. (°C)
120
90
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT40N60B2CF(G)_LCF(G)
100
OPERATION HERE
LIMITED BY R
(ON)
DS
100µS
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I = 40A
D
VDS=120V
VDS=300V
8
VDS=480V
4
0
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
TJ =+150°C
TJ =+25°C
10
V
R
70
120
V
DD
R
100
= 400V
tr and tf (ns)
td(on) and td(off) (ns)
100
= 5Ω
G
T = 125°C
J
L = 100µH
80
60
= 400V
= 5Ω
50
tf
40
tr
30
20
td(on)
0
10
20
30
40
ID (A)
10
50
60
0
70
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
J
on
includes
diode reverse recovery.
1500
Eon
1000
500
30
40
ID (A)
50
60
70
2000
Eon
1500
Eoff
1000
V
DD
10
20
30
40
50
60
70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
= 400V
I = 40A
D
T = 125°C
J
L = 100µH
500
Eoff
0
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 400V
L = 100µH
E
10
= 5Ω
T = 125°C
2000
0
2500
SWITCHING ENERGY (mJ)
2500
0
G
T = 125°C
J
L = 100µH
60
20
SWITCHING ENERGY (mJ)
200
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
td(off)
40
5-2005
100
Crss
140
050-7236 Rev A
Coss
DD
160
0
Ciss
1,000
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
12
C, CAPACITANCE (pF)
10,000
10
1
APT40N60B2CF(G)_LCF(G)
30,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
80
E
on
0
includes
diode reverse recovery.
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(on)
td(off)
tf
tr
TJ125°C
Drain Voltage
Drain Current
90%
90%
5%
5%
10%
10%
Drain Voltage
Switching Energy
Switching Energy
Drain Current
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DQ60
VDD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 (L) Package Outline (LCF)
T-MAXTM (B2) Package Outline (B2CF)
e1 SAC: Tin, Silver, Copper
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2005
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7236 Rev A
Drain
20.80 (.819)
21.46 (.845)