NTD20N03L27 Power MOSFET 20 Amps, 30 Volts N–Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain–to–source diode has a ideal fast but soft recovery. http://onsemi.com 20 AMPERES 30 VOLTS RDS(on) = 27 mΩ Features • • • • • • Ultra–Low RDS(on), single base, advanced technology SPICE parameters available Diode is characterized for use in bridge circuits IDSS and VDS(on) specified at elevated temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 N–Channel D Typical Applications • • • • Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many applications G S MARKING DIAGRAM MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage – Continuous – Non–Repetitive (tp10 ms) Drain Current – Continuous @ TA = 25C – Continuous @ TA = 100C – Single Pulse (tp10 µs) Total Power Dissipation @ TA = 25C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance – Junction–to–Case – Junction–to–Ambient – Junction–to–Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol Value Unit VDSS VDGR 30 Vdc 30 Vdc Vdc VGS VGS 20 24 ID ID IDM PD 20 16 60 Adc 74 0.6 1.75 Watts W/°C W TJ, Tstg –55 to 150 °C EAS 288 mJ January, 2001 – Rev. 0 CASE 369A DPAK STYLE 2 1 2 3 20N3L Y WW = Device Code = Year = Work Week PIN ASSIGNMENT 4 Drain 1 Gate °C/W RθJC RθJA RθJA TL YWW 20N3L Apk 1.67 100 71.4 2 Drain 3 Source ORDERING INFORMATION °C 260 1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature. Semiconductor Components Industries, LLC, 2001 4 1 Device Package Shipping NTD20N03L27 DPAK 75 Units/Rail NTD20N03L27–1 DPAK 75 Units/Rail NTD20N03L27T4 DPAK 2500 Tape & Reel Publication Order Number: NTD20N03L27/D NTD20N03L27 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 30 – – 43 – – – – – – 10 100 – – ±100 1.0 – 1.6 5.0 2.0 – – – 28 23 31 27 – – 0.48 0.40 0.54 – gFS – 21 – mhos Ciss – 1005 1260 pF Coss – 271 420 Crss – 87 112 td(on) – 17 25 tr – 137 160 td(off) – 38 45 tf – 31 40 QT – 13.8 18.9 Q1 – 2.8 – Q2 – 6.6 – – – 1.0 0.9 1.15 – trr – 23 – ta – 13 – tb – 10 – QRR – 0.017 – OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C) IDSS Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 2.) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) RDS(on) Static Drain–to–Source On–Resistance (Note 2.) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, ID = 10 Adc) Vdc mV/°C mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 20 Vdc, ID = 20 Adc, VGS = 5.0 5 0 Vdc, Vdc RG = 9.1 Ω) (Note 2.) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 15 Adc, Ad VGS = 10 Vdc) (Note 2.) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS VSD Forward On–Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2.) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS =15 Adc, Adc VGS = 0 Vdc, Vdc dlS/dt = 100 A/µs) (Note 2.) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns µC NTD20N03L27 40 VGS = 10 V 35 VGS = 4 V VGS = 8 V 30 ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) 40 VGS = 4.5 V VGS = 5 V 25 VGS = 3.5 V 20 VGS = 6 V 15 VGS = 3 V 10 TJ = 25°C 5 VGS = 2.5 V 0 0.2 0.4 0.6 1 0.8 1.2 1.4 1.6 1.8 28 24 TJ = 100°C 20 16 TJ = 25°C TJ = –55°C 12 8 4 1 1.5 2 2.5 3 3.5 4 4.5 –VGS, GATE–TO–SOURCE VOLTAGE (V) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics VGS = 5 V TJ = 100°C RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) –VDS, DRAIN–TO–SOURCE VOLTAGE (V) 0.04 0.035 32 0 0.5 2 TJ = 25°C VGS = 5 V 0.025 0.03 TJ = 25°C 0.025 0.02 TJ = –55°C 0.015 0.01 5 0.03 0.02 VGS = 10 V 0.015 0.005 0 2 5 12 8 15 22 18 25 28 32 35 38 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance vs. Drain Current and Temperature Figure 4. On–Resistance vs. Drain Current and Gate Voltage 1000 ID = 10 A VGS = 5 V VGS = 0 V 1.2 1 0.8 0.6 –50 4 0 ID, DRAIN CURRENT (AMPS) 1.6 1.4 0.01 –IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) 0 VDS > = 10 V 36 TJ = 125°C 100 TJ = 100°C 10 1 –25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) –VDS, DRAIN–TO–SOURCE VOLTAGE (V) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTD20N03L27 VGS, GATE–TO–SOURCE VOLTAGE (V) 2500 C, CAPACITANCE (pF) VGS – VDS 200 1500 Ciss 1000 Coss 500 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 23 25 Q 10 8 VGS 6 Q1 4 Q2 2 0 ID = 20 A TJ = 25°C 0 2 4 6 8 10 12 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Drain–to–Source Voltage vs. Total Charge 1000 14 IS, SOURCE CURRENT (AMPS) 20 tr 100 tf td(off) 10 td(on) VDS = 20 V ID = 20 A VGS = 5.0 V TJ = 25°C 1 1 10 VGS = 0 V TJ = 25°C 18 16 14 12 10 8 6 4 2 0 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (Ω) VSD, SOURCE–TO–DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 12 350 ID = 24 A 300 250 200 150 100 50 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 1.0 NTD20N03L27 PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 5 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- NTD20N03L27 Notes http://onsemi.com 6 NTD20N03L27 Notes http://onsemi.com 7 NTD20N03L27 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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