ETC NTMD3N08

NTMD3N08, NTMD3N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
http://onsemi.com
3 AMPERES
3N08 Typ RDS(on) = 185 mΩ
3N08L Typ RDS(on) = 200 mΩ
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
IDSS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
80
–
–
–
–
–
–
1.0
10
–
–
±100
µAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
NTMD3N08
NTMD3N08L
VGS(th)
Static Drain–to–Source
On–Resistance
(ID = 1.5 Adc)
NTMD3N08, VGS= 10 V
NTMD3N08L, VGS = 5 V
RDS(on)
Vdc
2.0
1.0
3.0
2.0
4.0
3.0
mΩ
–
–
185
200
DUAL SO–8
CASE 751
STYLE 11
–
–
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 0
1
Publication Order Number:
NTMD3N08/D
NTMD3N08, NTMD3N08L
PACKAGE DIMENSIONS
DUAL SO–8
CASE 751–06
ISSUE T
D
A
8
E
5
0.25
H
1
B
M
M
4
h
B
X 45 e
A
C
SEATING
PLANE
0.10
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
B
0.25
M
C B
S
A
S
L
DIM
A
A1
B
C
D
E
e
H
h
L
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0
7
STYLE 11:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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Update 8/28/00 AS
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Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NTMD3N08/D