RF2464 5 VHF QUADRATURE MODULATOR Typical Applications • Digital and Spread-Spectrum Systems • AM, SSB, DSB Modulation • GMSK, QPSK, DQPSK, QAM Modulation • Image-Reject Upconverters • Private Mobile Radio and TETRA systems Product Description Si Bi-CMOS SiGe HBT ü Si CMOS POWER CONTROL U pg r VDD1 2 ad ed VDD2 1 5 R F2 48 0.252 0.236 8° MAX 0° MIN 0.010 0.007 Package Style: SOIC-14 Features • Single 3V to 5V Power Supply • Low Power and Small Size • Excellent Amplitude and Phase Balance 11 GND S ee 0.0500 0.0164 13 GND2 I SIG 4 • Low Broadband Noise Floor • 200MHz to 600MHz Operation 10 GND1 +45° -45° Q REF 6 9 PHASE Q SIG 7 8 LO IN Functional Block Diagram Rev B1 010329 0.059 0.057 • CMOS Compatible Power Down Control 12 GND Σ 0.050 14 RF OUT PD 3 I REF 5 5 GaAs MESFET P GaAs HBT 0.010 0.004 0.347 0.339 Optimum Technology Matching® Applied Si BJT .018 .014 MODULATORS AND UPCONVERTERS 0.156 0.148 ro du ct The RF2464 is a monolithic integrated universal modulation system capable of generating modulated AM, PM, or compound carriers in the VHF and UHF frequency range. The IC contains all of the required components to implement the modulation function including differential amplifiers for the baseband inputs, a 90° hybrid phase splitter, limiting LO amplifiers, two balanced mixers, a combining amplifier, and an output RF amplifier which will drive a 50Ω load. Component matching, which can only be accomplished with monolithic construction, is used to full advantage to obtain excellent amplitude balance and high phase accuracy. The unit features low power consumption, single power supply operation and adjustment free operation with no external parts required to operate the part as specified. Ordering Information RF2464 RF2464 PCBA VHF Quadrature Modulator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5-55 RF2464 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +7.5 -0.5 to VDD +0.4 +10 -40 to +85 -40 to +150 VDC VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VDD =5VDC, I&Q inputs =2VPP LO Input Frequency Range Power Level Input VSWR 200 to 600 -3 to +6 1.2:1 MHz dBm Input Impedance 94-j264 Ω R F2 48 67-j117 Modulation Input Amplitude Error (I/Q) Quadrature Phase Error 150 MHz V V V V Ω mV 0.2 ±1 ±3 dB ° +3 dBm >40 >40 dBm/Hz dB dB P RF Output Turn On/Off Time PD Input Resistance Power Down “ON” Power Down “OFF” +1 50 1.5:1 -143 25 25 ad ed -1 18 U pg r Output Power Output Impedance Output VSWR Broadband Noise Floor Sideband Suppression Carrier Suppression Power Down DC to 100 2.0 to 3.0 VREF ±0.7 VREF ±1.5 VREF ±2.5 3000 50 ro du ct Frequency Range Reference Voltage (VREF) Modulation (I&Q) Modulation (I&Q) Maximum Modulation (I&Q) Input Resistance DC Offset With external 50Ω termination; see application schematic, note A. At 200MHz, without external 50Ω termination. At 400MHz, without external 50Ω termination. At 600MHz, without external 50Ω termination. 5 79-j158 S ee MODULATORS AND UPCONVERTERS 5 Condition I & Q signals for 0dBm output power. I & Q signals for +5dBm output power. In-phase and quadrature signals. ISIG -IREF and QSIG -QREF; to achieve maximum carrier suppression. From 350MHz to 450MHz. VDD =5V, LO Power=0dBm, LO Freq=400MHz, SSB, I&Q input=0.7VP At 20MHz offset Modulation DC offset can be externally adjusted for optimum suppression. Suppression is typically better than 25dB without adjustment. <100 >1 VCC 0 ns MΩ V V Threshold voltage Threshold voltage 5 3 to 5.5 28 0.5 V V mA mA Specifications Operating Limits Operating Power Down Power Supply Voltage Current 5-56 39 2 Rev B1 010329 RF2464 2 VDD1 3 PD 4 I SIG Description Interface Schematic Power supply for the RF Output amplifier. An external RF bypass capacitor is needed. The trace length between the pin and the bypass capacitor should be minimized. The ground side of the capacitor should connect immediately to the ground plane. Power supply for all other circuits. An external RF bypass capacitor is needed. Power Down control. When this pin is 0V all circuits are turned off, and when +5V all circuits are operating. This is a high impedance input, internally connected to the gates of a few FETs. To minimize current consumption in power down mode, this pin should be as close to 0V as possible. In order to maximize output power this pin should be as close to +5V as possible during normal operation. Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be 2.5±0.5V. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. I REF I SIG 5 MODULATORS AND UPCONVERTERS Function VDD2 6 Q REF 7 Q SIG 8 LO IN 9 PHASE Reference voltage for the I mixer. This voltage should be the same as See pin 4. the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 40dB it may be tuned ±0.15V (relative to the I SIG DC voltage). Without tuning, it will typically be better than 25dB. Reference voltage for the Q mixer. This voltage should be the same as Same as pin 3. the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 40dB it may be tuned ±0.15V (relative to the Q SIG DC voltage). Without tuning, it will typically be better than 25dB. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, Q SIG and Q REF also need to be swapped to maintain correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. Baseband input to the Q mixer. This pin is DC coupled. Maximum out- Same as pin 4. put power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be 2.5±0.5V. The input of the phase shifting network. This high impedance input can LO IN be matched with an external 56Ω termination resistor. This pin is internally connected to ground through a 4kΩ resistor. Putting a DC voltage on this pin is not recommended. However, connecting this pin to ground, e.g., through a shunt inductor, is allowed. ro du ct I REF S ee U pg r ad ed P 5 R F2 48 5 Pin 1 10 GND1 11 GND 12 13 GND GND2 Rev B1 010329 This pin allows to adjust the phase of the I/Q signals. However, the control is very sensitive and hard to control. Control voltage change for a few degrees adjustment is in the order of 10mV. Device to device and temperature variation are not characterized. Therefore it is not recommended to use this pin; leave it not connected. Do NOT connect to ground.For compensating large errors in the I/Q signals supplied to the device or in control loops this pin may prove useful. Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Ground connection for other circuits. Keep traces short and connect to ground plane immediately. Same as pin 11. PHASE Ground connection for the RF output stage. A good ground connection is especially important at this pin to avoid interference with other circuits. 5-57 RF2464 Pin 14 Function RF OUT Description Interface Schematic 50Ω output. This pin carries a DC voltage, and an external blocking capacitor is recommended. RF OUT Application Schematic VDD 100 pF POWER CONTROL 2 100 pF POWER DOWN 13 12 3 Coupling Capacitor I INPUT ZIN=100 11 4 100 Ω 100 Ω 100 Ω Q INPUT ZIN=100 100 Ω Σ 100 pF 50 Ω µstrip LO INPUT 8 P 56 Ω Note A Optional; input impedance is about 79-J158 Ω at 400 MHz without resistor. SMD resistor mounted adjacent to package pin, grounded through a via to the ground plane. S ee U pg r ad ed NOTE A: +45° -45° 9 6 7 Coupling Capacitor 10 5 ro du ct VREF RF OUTPUT R F2 48 MODULATORS AND UPCONVERTERS 100 nF CMOS 50 Ω µstrip 14 1 5 5 5-58 Rev B1 010329 RF2464 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P2 P2-1 P2-3 1 GAIN 1 2 GND 3 GAIN 2 2464400 Rev A C3 100 pF C2 100 nF C1 33 pF 1 2 I SIG J1 POWER CONTROL RF OUT J4 13 3 12 4 11 50 Ω µstrip P1-3 C5 33 pF 5 Σ 5 10 +45° -45° 6 C4 100 pF 5 9 50 Ω µstrip 7 50 Ω µstrip R F2 48 Q SIG J2 50 Ω µstrip 14 MODULATORS AND UPCONVERTERS P1-1 8 LO IN J3 S ee U pg r ad ed P ro du ct R1 56 Ω Rev B1 010329 5-59 RF2464 Evaluation Board Layout 2” x 2” S ee U pg r ad ed P ro du ct R F2 48 5 MODULATORS AND UPCONVERTERS 5 5-60 Rev B1 010329