Bulletin I25180 rev. B 04/00 ST173C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) 330A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AB (A-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST173C..C Units 330 A 55 °C 610 A 25 °C @ 50Hz 4680 A @ 60Hz 4900 A @ 50Hz 110 KA2s @ 60Hz 100 KA2s 1000 to1200 V 15 to 30 µs - 40 to 125 °C IT(AV) @ T hs IT(RMS) @ T hs ITSM I 2t V DRM/V RRM tq range TJ www.irf.com 1 ST173C..C Series Bulletin I25180 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ T J = TJ max. V V mA 10 1000 1100 12 1200 1300 Type number ST173C..C 40 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 760 730 660 590 1200 1260 1030 1080 5570 2800 4920 2460 1000Hz 600 490 1200 1030 1620 1390 2500Hz 350 270 850 720 800 680 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit VDRM VDRM 47Ω / 0.22µF 50 V DRM 47Ω / 0.22µF A V 47Ω / 0.22µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST173C..C Units 330 (120) A 55 (85) °C 610 Max. peak, one half cycle, 4680 non-repetitive surge current 4900 Maximum I2t for fusing t = 10ms A 2 No voltage t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 110 t = 10ms No voltage Initial TJ = TJ max 100 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 71 Maximum I2√t for fusing double side (single side) cooled 4120 77 I 2 √t 180° conduction, half sine wave DC @ 25°C heatsink temperature double side cooled 3940 I 2t Conditions 1100 KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST173C..C Series Bulletin I25180 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt 1 t2 2.07 1.55 High level value of forward slope resistance V 0.87 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.77 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.61 IH Conditions ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance r ST173C..C Units mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST173C..C Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM Typical delay time Max. turn-off time 1.1 Min 15 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST173C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA ST173C..C Units T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST173C..C Series Bulletin I25180 rev. B 04/00 Thermal and Mechanical Specification Parameter ST173C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, °C DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, 0.033 case to heatsink DC operation double side cooled DC operation single side cooled K/W 0.017 Mounting force, ± 10% wt Conditions 0.17 junction to heatsink F Units Approximate weight Case style DC operation double side cooled 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W TJ = TJ max. Single Side Double Side Single Side Double Side 180° 0.015 0.016 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Ordering Information Table Device Code ST 17 3 C 12 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) dv/dt - tq combinations available dv/dt (V/µs) 15 18 t (µs) 20 q 25 30 20 CL CP CK CJ -- 50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH *Standard part number. All other types available only on request. 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST173C..C Series Bulletin I25180 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST173C..C Series (Sin gle Side Cooled) R th J-hs (D C) = 0.17 K/W 120 110 100 90 C o nduc tio n A ng le 80 70 60 30° 60° 180° 90° 50 120° 40 0 40 80 120 160 200 240 M a x im um A llo w ab le H e a tsin k T e m p e ra t u re (°C ) M aximum Allowable Heatsin k Tem perature ( °C) 28 (1.10) 1 30 ST 1 7 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .1 7 K / W 1 20 1 10 1 00 90 80 C o ndu ct io n Pe rio d 70 60 30 ° 50 60 ° 90° 40 120° 30 180° 20 0 50 1 00 15 0 200 25 0 DC 30 0 Average On -state Current (A) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 35 0 5 ST173C..C Series 1 30 ST 1 7 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K/ W 1 20 1 10 1 00 90 C on duc tion A ng le 80 70 30 ° 60° 60 90 ° 1 20° 50 18 0° 40 30 0 50 1 00 15 0 2 0 0 2 50 3 00 35 0 40 0 M a x im u m A llo w a b le He a t sin k T e m p e rat u re (° C ) M a x im um A llo w a b le H e a t sin k Te m p e ra t ure (°C ) Bulletin I25180 rev. B 04/00 1 30 ST 1 7 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 8 K / W 1 20 1 10 1 00 90 C o ndu ctio n Pe rio d 80 70 60 50 40 60° 30 3 0° 20 0 1 00 A v e ra g e O n - sta t e C u rre n t (A ) 60 0 R M S Lim it 50 0 40 0 Co nd uctio n A ng le 30 0 S T 1 7 3 C ..C Se rie s T J = 1 25° C 20 0 10 0 0 0 M a xim u m A v e ra g e O n -s ta t e P o w e r Lo ss (W ) M a x im um A v e ra g e O n -st a t e P o w e r L o ss (W ) 70 0 80 0 1 0 00 6 0 0 R M S Lim it Co nd uc tio n Pe riod 4 00 ST 1 7 3 C ..C Se r ie s T J = 1 2 5 °C 2 00 0 0 10 0 3 00 4 00 50 0 600 7 00 25 0 0 ST 1 7 3 C ..C S e rie s 20 0 0 1 00 Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 6 - On-state Power Loss Characteristics P e a k H a lf S in e W a v e O n - sta t e C u rre n t (A ) P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) 30 0 0 N um b er O f E qua l A m p litude H alf C yc le C urre n t Pulse s (N ) 6 200 A v e ra g e O n -st a te C u rre n t (A ) 35 0 0 10 70 0 8 00 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 A t A n y R a te d Lo a d C o n d it io n A n d W it h R a t e d V RRM A p p lie d F o llo w in g S u rg e . In it ia l T J = 1 2 5 ° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 1 6 00 DC 1 80° 1 20° 90° 60° 30° 1 2 00 A v e ra g e O n -st a te C u rre n t (A ) 40 0 0 DC 500 1 4 00 Fig. 5 - On-state Power Loss Characteristics 45 0 0 40 0 Fig. 4 - Current Ratings Characteristics 1 00 0 90 0 180° 300 A v e ra g e O n -st a t e C urr e n t (A ) Fig. 3 - Current Ratings Characteristics 180° 120° 90° 60° 30° 200 1 20° 9 0° 5000 M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l 4500 O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l T J = 1 2 5 ° C 4000 N o V o lt a g e R e a p p lie d Ra t e d V RRM R e a p p lie d 3500 3000 2500 2000 ST 1 7 3 C ..C S e rie s 1500 0.01 0.1 1 P u lse T ra in D u ra tio n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST173C..C Series Bulletin I25180 rev. B 04/00 Tr a nsie n t T h e r m a l Im pe d a n c e Z thJ-hs (K /W ) In stantaneous O n-state Curren t (A) 10000 ST173C ..C Series 1000 T J = 25°C T J = 125°C 100 1 1.5 2 2.5 3 3.5 4 4.5 1 S T 1 7 3 C ..C Se rie s 0 .1 S t e a d y S ta t e V a lu e R th J- hs = 0 .1 7 K / W 0 .0 1 (S in g le S id e C o o le d ) R th J- hs = 0 .0 8 K / W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0. 01 M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) Maximum Reverse Recovery Ch arge - Qrr (µC) 250 I T M = 5 00 A ST173C..C Series TJ = 125 °C 300 A 200 A 150 10 0 A 100 50 A 50 0 0 20 40 60 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 200 0. 1 S q u a re W a v e P u lse D ur at io n (s) Instantan eous On -state Voltage (V) 100 1 60 1 40 I TM = 5 00 A 30 0 A 1 20 2 00 A 1 00 1 00 A 50 A 80 60 40 S T1 73 C ..C S e rie s T J = 1 2 5 °C 20 0 0 20 40 60 80 100 Rate O f Fall Of O n-state Current - di/dt (A/µs) R a t e O f Fa ll O f F o rw a r d C u rre n t - d i/ d t ( A / µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n - sta t e C u rre n t (A ) 1 E4 Snub ber c irc uit R s = 47 o hm s C s = 0 .22 µF V D = 8 0% V D R M Snu bbe r c irc uit R s = 47 oh m s C s = 0.22 µF V D = 80% V DR M 100 0 500 400 2 00 1 00 50 Hz 10 00 50 0 1 50 0 1 E3 2 50 0 10 0 50 Hz 2 50 0 3 000 30 0 0 ST1 73 C.. C Serie s Sinuso idal pulse T C = 40 °C 5 00 0 tp 1 E2 1E1 40 0 20 0 1 50 0 1E2 1 E3 ST1 73C ..C Serie s Sinusoidal pulse T C = 55°C 5 0 00 1 E14E 41 E11E 1 P u lse Ba se w id t h (µ s) tp 1 E2 1E3 1E4 Pu lse B a se w id th (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST173C..C Series Bulletin I25180 rev. B 04/00 P ea k O n- st a te C u rr e nt (A ) 1 E4 Snu bbe r c irc uit R s = 47 o hm s C s = 0 .22 µF V D = 8 0% V D RM 1 E3 2 00 0 2 50 0 2 00 50 0 4 00 1 5 00 1 00 0 tp 1 E2 1 E1 1E2 50 Hz 1 50 0 1E3 400 10 00 5 00 2 00 0 2 50 0 ST173 C. .C Se ries Trapezo idal pulse T C = 40 °C di/dt = 5 0A/µs 30 00 5 00 0 1 00 Snub ber c ircuit R s = 47 o hm s C s = 0 .22 µ F V D = 8 0% V D RM tp 5 00 0 1 E14E 4 1 E11E 1 1E2 100 50 Hz ST17 3C. .C Se ries Trapezo idal pulse T C = 5 5°C di/dt = 5 0A/µs 3 00 0 Pu lse B a se w id th (µ s) 2 00 1 E3 1 E4 P ulse B a se w idt h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - st a t e C u rre n t (A ) 1 E4 Sn ubbe r c irc uit R s = 4 7 o hm s C s = 0 .22 µF V D = 8 0% V D RM 1 E3 15 00 10 00 500 20 0 10 0 400 Snub be r c irc uit R s = 47 o hm s C s = 0 .22 µF V D = 8 0% V D RM 50 Hz 1 50 0 2 50 0 40 0 20 0 1 00 50 Hz 2 50 0 3 00 0 1 E2 1 000 5 00 3 00 0 5 0 00 5 000 10 00 0 ST17 3C ..C Se ries Trape zoidal p ulse T C = 40°C d i/dt = 1 00 A/µs tp 1 E1 1E1 1E2 1E3 ST1 73 C..C Serie s Trap ezo ida l pu lse T C = 55°C di/dt = 10 0A /µs 10 00 0 tp 1 E14E 4 1 E11E 1 1 E2 1E 3 1E4 P u lse B ase w id t h (µ s) Pu lse B a se w id t h (µ s) Fig. 15 - Frequency Characteristics P e a k O n - st at e C u rr e n t (A ) 1 E5 ST1 73 C..C Serie s Rec ta ngular pulse di/d t = 50 A/µs tp 1 E4 20 jo ules pe r pulse 20 jo ule s pe r p ulse 1 2 10 3 5 2 0.5 1 E3 0 .5 0.3 0.1 0 .2 1 E2 1 E1 1E 1 10 1 0.3 0 .2 tp 3 5 0 .1 ST17 3C ..C Serie s Sinuso idal pulse 1 E2 1E3 P u lse B a se w id th (µ s) 1 E14E 4 1 E11E 1 1E2 1 E3 1 E4 P u lse Ba se w id th (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST173C..C Series Bulletin I25180 rev. B 04/00 Re c ta n g ula r ga t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 µs b ) R e c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s 10 tr< = 1 µ s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 10 W , 20 W , 40 W , 60 W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s (a ) (b ) Tj=2 5 °C 1 Tj=-40 °C Tj=1 25 °C In st a n ta n e o us G a te V o lt ag e ( V ) 1 00 (1) (2) (3) (4) V GD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 1 7 3 C ..C S e rie s F re q u e n c y L im ite d b y PG (A V ) 0 .1 1 10 1 00 In st a n t a n e o u s G a t e C u rre n t ( A ) Fig. 17 - Gate Characteristics www.irf.com 9