Bulletin I25178 rev. B 04/00 ST183C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design 370A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (A-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST183C..C Units 370 A 55 °C 690 A 25 °C @ 50Hz 4900 A @ 60Hz 5130 A @ 50Hz 120 KA2s @ 60Hz 110 KA2s 400 to 800 V 10 to 20 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I2 t VDRM /VRRM tq range TJ www.irf.com 1 ST183C..C Series Bulletin I25178 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST183C..C 40 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 770 730 660 600 1220 1270 1160 1090 5450 2760 4960 2420 1000Hz 600 490 1210 1040 1600 1370 2500Hz 350 270 860 730 800 680 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST183C..C Units 370 (130) A 55 (85) °C 690 Max. peak, one half cycle, 4900 non-repetitive surge current 5130 Maximum I2t for fusing t = 10ms A 2 No voltage t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 120 t = 10ms No voltage Initial TJ = TJ max 110 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 78 Maximum I2√t for fusing double side (single side) cooled 4310 85 I 2 √t 180° conduction, half sine wave DC@ 25°C heatsink temperature double side cooled 4120 I 2t Conditions 1200 KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST183C..C Series Bulletin I25178 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt 1 t2 1.80 1.40 High level value of forward slope resistance V 0.67 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. 0.58 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.45 IH Conditions ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance r ST183C..C Units mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST183C..C Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM Typical delay time Max. turn-off time 1.1 Min 10 Max 20 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST183C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA ST183C..C Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST183C..C Series Bulletin I25178 rev. B 04/00 Thermal and Mechanical Specification Parameter ST183C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, °C DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, 0.033 case to heatsink DC operation double side cooled DC operation single side cooled K/W 0.017 Mounting force, ± 10% wt Conditions 0.17 junction to heatsink F Units Approximate weight Case style DC operation double side cooled 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.015 0.016 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Units Conditions K/W TJ = TJ max. 0.011 Ordering Information Table Device Code ST 18 3 C 08 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for t q test condition) dv/dt - tq combinations available dv/dt (V/µs) 20 8 - t q code 10 CN 12 CM 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) t (µs) 15 CL q 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 18 CP 20 CK 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK *Standard part number. All other types available only on request. 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST183C..C Series Bulletin I25178 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST183C..C Series (Single Side Cooled) R thJ-h s (DC) = 0.17 K/W 120 110 100 90 C o nd uctio n A ng le 80 70 30° 60 60° 50 90° 180° 120° 40 0 40 80 120 160 200 240 M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) Maxim um Allowable Heatsin k Tem perature (°C) 28 (1.10) 130 S T 1 8 3 C ..C Se rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .1 7 K / W 120 110 100 90 80 C on duc tion Pe rio d 70 60 30° 50 60 ° 40 90 ° 1 20° 30 1 80° 20 0 50 DC 10 0 15 0 20 0 2 50 30 0 35 0 4 00 Average O n-state Current (A) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST183C..C Series 130 ST 1 8 3 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 8 K / W 120 110 100 90 C o nduc tion A ng le 80 30° 70 60° 60 90 ° 120 ° 50 180° 40 30 0 50 1 0 0 1 50 2 0 0 2 50 30 0 3 50 4 0 0 45 0 M a x im um A llo w a ble H e a t sin k Te m pe ra tu r e (° C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra tu re (°C ) Bulletin I25178 rev. B 04/00 130 S T 1 8 3 C ..C Se rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 8 K / W 120 110 100 90 Co n duc tion Pe rio d 80 70 30 ° 60° 60 50 90 ° 40 120° 30 20 0 10 0 A v e ra g e O n -st a t e C u rre n t (A ) 6 00 R M S L im it 5 00 4 00 C o nd uc tio n A ng le 3 00 2 00 S T 1 8 3 C ..C Se rie s T J = 1 2 5 °C 1 00 0 0 Maxim um Average O n-state Power L oss (W ) M a x im u m A v e ra g e O n -st a t e P o w e r L o ss (W ) 18 0° 12 0° 9 0° 6 0° 3 0° 7 00 1000 800 Co n du ctio n Pe riod 400 ST183C..C Series T J = 125°C 200 0 0 100 200 300 400 500 600 700 2500 ST183C..C Series 2000 100 Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 6 - On-state Power Loss Characteristics P e a k H a lf S in e W a v e O n - sta t e C u rre n t (A ) Peak Half Sin e W ave O n-state Current (A) 3000 N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N ) 6 70 0 Averag e On -state Curren t (A) 3500 10 60 0 600 RM S Lim it 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1 DC 5 00 DC 180° 120° 90° 60° 30° 1200 A v e ra g e O n -st a te C u rre n t (A ) 4000 180 ° 1400 Fig. 5 - On-state Power Loss Characteristics 4500 4 00 Fig. 4 - Current Ratings Characteristics 1 0 00 8 00 300 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 9 00 2 00 5000 M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l 4500 O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l T J = 1 2 5 ° C N o V o lta g e Re a p p lie d 4000 Ra t e d V RRM R e a p p lie d 3500 3000 2500 ST 1 8 3 C ..C S e rie s 2000 0.01 0.1 1 P u lse T ra in D u ra tio n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST183C..C Series Bulletin I25178 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z thJ -h s (K / W ) Instantaneous On-state Current (A) 10000 ST 183C..C Series 1000 T J = 25°C T J = 125°C 100 1 1.5 2 2. 5 3 3.5 4 4.5 1 ST 1 8 3 C ..C Se rie s 0 .1 S t e a d y S ta t e V a lue R th J-hs = 0 .1 7 K / W 0 .0 1 (S in gle S id e C o o le d ) R th J-hs = 0 .0 8 K / W (D o u b le Sid e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 TM Maxim um Reverse Recovery Current - Irr (A) Maxim um Reverse Recovery Ch arge - Q rr (µC) 250 I = 50 0 A 3 00 A 200 2 00 A 150 10 0 A 100 50 A 50 0 0 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics ST183C..C Series T J = 125 °C 0 .1 Sq u a r e W a v e Pu lse D u ra t io n (s) Instan taneous O n-state Voltage (V) 10 20 30 40 50 60 70 80 90 100 160 I T M = 5 00 A 140 30 0 A 2 00 A 120 1 00 A 100 50 A 80 60 40 ST183C..C Series T J = 125 °C 20 0 0 10 20 30 40 50 60 70 80 90 100 Rate O f Fa ll O f O n -state Current - di/dt (A/µs) Rate O f Fall Of Forw ard Curren t - di/dt (A/ µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -s ta t e C u rre n t (A ) 1E4 Snub ber c ircu it R s = 47 o hm s C s = 0 .22 µ F V D = 80 % V D RM 50 0 40 0 20 0 1 50 0 1 00 0 1E3 1 00 Snub be r c irc uit R s = 47 oh m s C s = 0.22 µF V D = 8 0% V D RM 50 Hz 1 50 0 2 50 0 5 00 40 0 2 00 1 00 50 Hz 2 50 0 3 0 00 3 0 00 5 00 0 ST183 C. .C Se ries Sinuso ida l p ulse T C = 40 °C tp 1 00 0 0 1E2 1E1 10 00 1E2 1E3 ST1 83 C..C Serie s Sinusoidal pulse T C = 55 °C 5 00 0 tp 10 00 0 1 E14E 41 E11E 1 P u lse B a se w id th (µ s) 1 E2 1 E3 1E4 P u lse B ase w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST183C..C Series Bulletin I25178 rev. B 04/00 P ea k O n -st a te C u rr en t ( A ) 1E4 Snub ber c irc uit R s = 47 o hm s C s = 0 .22 µF V D = 8 0% VD RM Snu bbe r c ircuit R s = 47 ohm s C s = 0 .22 µF V D = 80 % V D RM 1E3 10 00 1 50 0 2 00 50 0 40 0 1 00 5 0 H z 1 50 0 2 500 tp 5 0 00 1E2 1 E1 1 E2 1 E3 200 500 40 0 100 50 H z 2 50 0 ST18 3C ..C Se rie s Tra pezo idal pulse T C = 40°C di/d t = 5 0A/µs 3 00 0 10 00 ST1 83 C..C Series Trape zoidal pulse T C = 55 °C di/dt = 50A /µs 3 000 tp 5 00 0 1 E14E 4 1 E11E 1 1E2 1 E3 1E4 P u lse Ba se w id th (µs) P u lse B a se w id th (µs) Fig. 14 - Frequency Characteristics P e ak O n -st a t e C u rre n t (A ) 1E 4 Snub ber circuit R s = 47 o hm s C s = 0 .22 µF V D = 8 0% V D RM Snub be r c irc uit R s = 4 7 o hm s C s = 0 .22 µF V D = 8 0% VD R M 1E 3 1 50 0 400 1 00 0 5 00 2 00 10 0 50 Hz 15 00 2 50 0 50 Hz 3 00 0 5 00 0 50 00 10 00 0 ST18 3C ..C Se rie s Trape zoidal pulse T C = 4 0°C d i/dt = 1 00 A/µs tp 1E 1 1E 1 2 00 10 0 40 0 2 50 0 3 0 00 1E 2 1 000 50 0 1 E2 1E3 ST183 C.. C Serie s Trapezo ida l pulse T C = 55 °C di/dt = 10 0A/µs 10 00 0 tp 1 E14E 4 1 E11E 1 1 E2 P u lse B ase w id t h (µ s) 1 E3 1 E4 Pu lse B ase w id th (µs) Fig. 15 - Frequency Characteristics P e a k O n -st a t e C u rre n t (A ) 1E5 tp 1E4 1E3 0. 2 0.3 0. 5 1 2 4 10 ST18 3C. .C Se ries Re ctan gular pulse di/dt = 5 0A/µs 20 jo ules pe r pulse 20 jo ules pe r pulse 4 2 1 0.5 0 .3 0 .1 0. 2 0 .1 1E2 tp 1E1 1E 1 10 ST1 83C ..C Serie s Sinusoidal pulse 1E 2 1 E3 P ulse Ba se w id th (µs) 1 E14E 4 1 E11E 1 1E2 1E3 1 E4 Pu lse B ase w id t h (µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST183C..C Series Bulletin I25178 rev. B 04/00 Re c ta n g ula r ga t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 µs b ) R e c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s 10 tr< = 1 µ s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 10 W , 20 W , 40 W , 60 W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s (a ) (b ) Tj=2 5 °C 1 Tj=-40 °C Tj=1 25 °C In st an t a n e o us G a te V o lt a g e ( V ) 1 00 (1) (2) (3) (4) V GD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 1 8 3 C ..C S e rie s F re q u e n c y L im ite d b y PG (A V ) 0 .1 1 10 1 00 In st a n t a n e o u s G a t e C u rre n t ( A ) Fig. 17 - Gate Characteristics www.irf.com 9