Bulletin I25172 rev. B 04/00 ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (E-PUK) 620A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (E-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST303C..C Units 620 A 55 °C 1180 A 25 °C @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 289 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 I t V DRM/V RRM 400 to 1200 V tq range (*) 10 to 30 µs - 40 to 125 °C TJ (*) t = 10 to 20µs for 400 to 800V devices q t = 15 to 30µs for 1000 to 1200V devices q www.irf.com 1 ST303C..C Series Bulletin I25172 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST303C..C 08 800 900 10 1000 1100 12 1200 1300 50 Current Carrying Capability ITM Frequency ITM ITM 180 el 180oel Units 100µs o 50Hz 400Hz 1314 1260 1130 1040 2070 2190 1940 1880 6930 3440 6270 2960 1000Hz 900 700 1900 1590 1850 1540 2500Hz 340 230 910 710 740 560 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd 50 VDRM VDRM A 50 V V DRM Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) ST303C..C Max. average on-state current @ Heatsink temperature Units Conditions 620 (230) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 7950 t = 10ms non-repetitive surge current 8320 2 I t 2 Maximum I t for fusing reapplied 6690 t = 10ms 100% VRRM 7000 t = 8.3ms reapplied Sinusoidal half wave, 316 t = 10ms No voltage Initial TJ = TJ max 289 t = 8.3ms reapplied 204 I 2 √t 2 Maximum I2√t for fusing No voltage t = 8.3ms 224 3160 A KA2s t = 10ms 100% VRRM t = 8.3ms reapplied KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST303C..C Series Bulletin I25172 rev. B 04/00 On-state Conduction Parameter V TM ST303C..C Units Max. peak on-state voltage 2.16 V T(TO)1 Low level value of threshold 1.44 voltage V T(TO)2 High level value of threshold voltage rt 1 t2 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.57 slope resistance r ITM= 1255A, T J = TJ max, tp = 10ms sine wave pulse 1.48 Low level value of forward Conditions mΩ High level value of forward slope resistance (I > π x IT(AV)), TJ = TJ max. 0.56 IH Maximum holding current 600 IL Typical latching current 1000 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, IG = 1A Switching Parameter di/dt ST303C..C Max. non-repetitive rate of rise 1000 of turned-on current t Typical delay time d tq Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM 0.83 Min 10 Max. turn-off time (*) Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code (*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices. q q Blocking Parameter ST303C..C Units Conditions TJ = TJ max. linear to 80% V DRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA ST303C..C Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 TJ = TJ max, rated VDRM applied 3 ST303C..C Series Bulletin I25172 rev. B 04/00 Thermal and Mechanical Specification Parameter ST303C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, 0.020 case to heatsink K/W 0.010 Mounting force, ± 10% wt DC operation single side cooled K/W 0.04 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions °C 0.09 junction to heatsink F Units DC operation double side cooled DC operation single side cooled DC operation double side cooled 9800 N (1000) (Kg) 83 g TO - 200AB (E-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.010 0.010 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Units Conditions K/W T J = TJ max. 0.007 Ordering Information Table Device Code ST 30 3 C 12 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: 4 dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN 12 CM up to 800V 15 CL 20 CK 50 DN DM DL DK 100 EN EM EL EK 200 FN * FM FL * FK * t q(µs) -DP DK DJ DH --EK EJ EH ----FK * HK FJ * HJ FH HH t q(µs) 15 18 20 only for 25 1000/1200V 30 CL CP CK CJ -- None = 500V/µsec (Standard value) *Standard part number. L All other types available only on request. = 1000V/µsec (Special selection) 400 HN HM HL HK www.irf.com ST303C..C Series Bulletin I25172 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) 25°± 5° All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 1 30 ST 3 0 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W 1 20 1 10 1 00 90 C o nd uc tio n A ng le 80 70 30° 60 60° 1 80° 90 ° 50 120 ° 40 0 50 1 00 1 5 0 2 0 0 25 0 30 0 3 5 0 4 00 M a x im u m A llo w a b le H e a t sin k T e m pe ra t ure (°C ) M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C ) 28 (1.10) 130 S T 3 0 3 C ..C Se rie s (S in g le Sid e C o o le d ) R th J-hs(D C ) = 0 .0 9 K / W 120 110 100 90 80 C o ndu ctio n Pe rio d 70 60 30° 50 60 ° 40 90° 1 20° 30 18 0° 20 0 10 0 2 00 300 40 0 50 0 DC 600 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 7 00 5 ST303C..C Series 1 30 ST 3 0 3 C ..C S e rie s (D o u b le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 4 K / W 1 20 1 10 1 00 90 Co nd uc tio n A ng le 80 70 3 0° 60 60 ° 90° 50 120° 40 180° 30 20 0 1 0 0 20 0 3 0 0 4 0 0 50 0 6 00 70 0 80 0 M a xim u m A llo w a b le H e a tsin k T e m p e rat u re (° C ) M a x im um A llo w a b le H e a t sin k T e m p e ra t ure (° C ) Bulletin I25172 rev. B 04/00 1 30 S T 3 0 3 C ..C Se rie s (D o ub le S id e C o o le d ) R th J-hs (D C ) = 0 .0 4 K / W 1 20 1 10 1 00 90 C o nd uc tio n P e rio d 80 70 30° 60 60° 9 0° 50 12 0° 40 180 ° 30 DC 20 0 20 0 A v e ra g e O n -st a t e C u rre n t (A ) R M S Lim it 1 2 00 1 0 00 8 00 C o nduc tio n An g le 6 00 4 00 S T 3 0 3 C ..C Se rie s T J = 1 2 5 °C 2 00 0 0 M a x im um A v e ra g e O n -sta t e P o w e r Lo ss (W ) M ax im u m A v e ra ge O n - sta t e P o w e r Lo s s (W ) 180 ° 120 ° 90 ° 60 ° 30 ° 1 4 00 2000 1600 R M S Lim it 1200 Co nd uc tio n Pe rio d 80 0 ST 3 0 3 C ..C S e rie s T J = 1 2 5 °C 40 0 0 0 10 0 20 0 30 0 4 00 50 0 6 0 0 7 0 0 80 0 2 00 5500 5000 4500 4000 3500 ST303C..C Series 3000 1 6 10 60 0 800 1 0 00 1 20 0 100 Fig. 6 - On-state Power Loss Characteristics Pe a k H a lf S in e W a v e O n -st a te C u rre n t (A ) Peak Half Sine Wave O n-state Curren t (A) 6000 4 00 A v e ra g e O n -st a te C u rre n t (A ) At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 1 2 00 DC 180° 120° 90° 60° 30° 2400 A v e ra g e O n - st a te C u rre n t (A ) 7000 1 0 00 2800 Fig. 5 - On-state Power Loss Characteristics 7500 80 0 Fig. 4 - Current Ratings Characteristics 2 0 00 1 6 00 6 00 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 1 8 00 40 0 8000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e r su s P u lse T ra in D ura t io n . C o n tro l O f C o n d u c tio n M a y N o t B e M a in t a in e d . 7000 In it ia l T J = 1 2 5 ° C N o V o lt a g e R e a pp lie d 6500 R a te d V RRM R e a p p lie d 6000 7500 5500 5000 4500 4000 3500 3000 0.01 ST 3 0 3 C ..C Se rie s 0.1 1 N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N ) P u ls e Tr a in D u ra t io n (s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST303C..C Series Bulletin I25172 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) Instan taneous O n-state Curren t (A) 10000 TJ = 25°C 1000 TJ = 125°C ST 303C..C Series 100 0 1 2 3 4 5 6 7 8 0 .1 S T 3 0 3 C ..C Se rie s 0 .0 1 St e a d y S ta t e V a lue R t hJ-hs = 0 .0 9 K / W (Sin g le S id e C o o le d ) R th J- hs = 0 .0 4 K / W (D o u b le Sid e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) Maximum Reverse Recovery Charge - Q rr (µC) 320 I TM = 50 0 A 3 00 A 20 0 A 10 0 A 50 A 280 260 240 220 200 180 160 140 ST303C..C Series TJ = 125 °C 120 100 80 10 20 30 40 50 60 70 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 300 0 .1 Sq u a re W a v e Pu lse D u ra tio n (s) Instan taneous O n-state Volta ge (V ) 90 100 180 I T M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A 160 140 120 100 80 ST 3 0 3 C ..C S e r ie s T J = 1 2 5 °C 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 Rate O f Fall O f O n-state Current - di/dt (A/µs) R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -st at e C u rre n t (A ) 1 E4 10 00 5 00 4 00 2 00 10 0 50 Hz 10 00 1 50 0 1 E3 2 50 0 3 00 0 ST30 3C ..C Se ries Sin uso idal pulse T C = 40°C tp 1 E2 1E 1 1 E2 1E 3 40 0 20 0 1 5 00 Sn ubbe r circ uit R s = 1 0 o hm s C s = 0 .47 µF V D = 8 0 % V D RM 2 00 0 500 25 00 3 00 0 ST30 3C ..C S erie s Sinuso id al pulse T C = 5 5°C tp 1 E2 5 0 Hz Snubbe r c ircu it R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V D RM 2 0 00 1 E14E 41 E1 1E 1 10 0 1E3 1 E4 P u lse B ase w idt h (µ s) P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST303C..C Series Bulletin I25172 rev. B 04/00 P e a k O n - sta t e C u rre n t (A ) 1 E4 Snubb er circuit R s = 10 o hm s C s = 0.4 7 µF V D = 80 % VD RM Snu bbe r c irc uit R s = 1 0 o hm s C s = 0 .47 µF V D = 8 0% V D RM 100 0 50 0 1 E3 100 50 Hz 4 00 20 0 1 00 0 1 50 0 5 00 40 0 5 0 Hz 20 0 1 00 1 50 0 2 00 0 2 00 0 2 50 0 ST303 C. .C Se ries Tra pezo id al p ulse T C = 40 °C di/dt = 50 A/µs 3 00 0 tp 1 E2 1 E1 1E 2 1E 3 ST303 C. .C Se ries Trapezo idal pulse T C = 5 5°C di/dt = 5 0A /µ s 2 50 0 30 00 tp 1 E14E 41 E11E 1 1E2 P ulse B a se w id th (µ s) 1 E3 1E4 P ulse Ba se w id th (µ s) Fig. 14 - Frequency Characteristics P e a k O n -st a t e C u rre n t (A ) 1 E4 Snub be r c irc uit R s = 1 0 o hm s C s = 0.47 µF V D = 8 0% V D RM Snubbe r circuit R s = 1 0 o hm s C s = 0.47 µF V D = 80 % V D R M 5 00 1 E3 40 0 20 0 1 00 5 0 Hz 10 0 0 1 00 0 15 0 0 200 100 50 Hz 1 50 0 2 00 0 30 00 tp 1 E2 20 00 ST3 03C ..C Serie s Trape zo idal pulse T C = 40 °C di/dt = 100 A/µs 2 50 0 1 E2 1 E1 4 00 5 00 1 E3 ST30 3C ..C Se rie s Trape zoidal pulse T C = 55°C d i/dt = 1 00 A/µs 2 50 0 tp 3 00 0 1 E14E 4 1 E1 1E 1 1 E2 P u lse Ba se w id t h (µ s) 1 E3 1 E4 Pu lse B a se w id th (µ s) Fig. 15 - Frequency Characteristics Pe a k O n -st at e C u rre n t (A ) 1E5 tp 1E4 2 3 5 10 ST30 3C. .C Se ries Re cta ngu lar pu lse di/d t = 50 A/µs 2 0 jo ule s p er pulse 2 0 jo ule s pe r p ulse 1 1E3 2 0. 5 5 1 0.4 0 .5 1E2 0.4 ST3 03C ..C Serie s Sinusoidal pulse tp 1E1 1E 1 3 10 1E 2 1 E3 P ulse Ba se w id th (µs) 1 E14E 41 E11E 1 1 E2 1 E3 1 E4 P u lse B a se w id th (µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST303C..C Series Bulletin I25172 rev. B 04/00 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST303C..C Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9