Bulletin I25170 rev. B 04/00 ST333C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design Center amplifying gate 720A Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AB (E-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST333C..C Units 720 A 55 °C 1435 A 25 °C @ 50Hz 11000 A @ 60Hz 11500 A @ 50Hz 605 KA2s @ 60Hz 553 KA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C IT(AV) @ T hs IT(RMS) @ T hs ITSM I 2t V DRM/V RRM tq range TJ www.irf.com 1 ST333C..C Series Bulletin I25170 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST333C..C 50 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel 100µs 50Hz 400Hz 1630 1630 1420 1390 1000Hz 1350 1090 2440 2120 2420 2100 2500Hz 720 550 1450 1220 1230 1027 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd 50 2520 2670 Units VDRM 2260 2330 7610 4080 VDRM 6820 3600 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) ST333C..C Max. average on-state current @ Heatsink temperature Units Conditions 720 (350) A 180° conduction, half sine wave 55 (75) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1435 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 11000 t = 10ms non-repetitive surge current 11500 2 I t 2 Maximum I t for fusing reapplied 9250 t = 10ms 100% VRRM 9700 t = 8.3ms reapplied Sinusoidal half wave, 605 t = 10ms No voltage Initial TJ = TJ max 553 t = 8.3ms reapplied KA2s 391 I 2 √t 2 Maximum I2√t for fusing No voltage t = 8.3ms 428 A 6050 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST333C..C Series Bulletin I25170 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt 1 t2 1.96 0.91 High level value of forward slope resistance V 0.58 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.58 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.93 IH Conditions ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance r ST333C..C Units mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST333C..C Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM Typical delay time Max. turn-off time 1.1 Min 10 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST333C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA ST333C..C Units T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max., f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST333C..C Series Bulletin I25170 rev. B 04/00 Thermal and Mechanical Specification Parameter ST333C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, °C DC operation single side cooled K/W 0.04 RthC-hs Max. thermal resistance, 0.020 case to heatsink DC operation double side cooled DC operation single side cooled K/W 0.010 Mounting force, ± 10% wt Conditions 0.09 junction to heatsink F Units Approximate weight Case style DC operation double side cooled 9800 N (1000) (Kg) 83 g TO - 200AB (E-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W TJ = TJ max. Single Side Double Side Single Side Double Side 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.036 Ordering Information Table Device Code ST 33 3 C 08 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: dv/dt - tq combinations available dv/dt (V/µs) 10 12 15 tq (µs) 18 20 25 30 20 CN CM CL CP CK --- 50 DN DM DL DP DK --- 100 EN EM EL EP EK --- 200 -FM * FL * FP FK FJ -- 400 --HL HP HK HJ HH *Standard part number. All other types available only on request. None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST333C..C Series Bulletin I25170 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) 25°± 5° All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST333C..C Series (Single Side Cooled) R th J- hs (DC) = 0.09 K/W 120 110 100 90 C o nd uc tio n A ng le 80 70 60 50 30° 60° 40 90° 30 120° 180° 20 0 100 200 300 400 500 600 M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C ) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 1 30 ST 3 3 3 C ..C S e rie s (Sin g le S id e C o o le d ) R th J-hs ( D C ) = 0 .0 9 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n P e rio d 70 60 50 30° 40 6 0° 90° 30 12 0° 20 0 1 80° DC 10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00 Average On -state Current (A) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST333C..C Series 130 ST 3 3 3 C ..C S e r ie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K /W 120 110 100 90 80 C o nd uctio n A ng le 70 60 50 30° 60 ° 40 90 ° 30 120° 20 10 0 2 00 4 00 60 0 180° 800 1 00 0 Maxim um Allowable Heatsin k Tem perature (°C) M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (°C ) Bulletin I25170 rev. B 04/00 130 ST333C..C Series ( Double Side Cooled ) R th J-hs (DC) = 0.04 K/W 120 110 100 90 C o ndu ctio n Pe riod 80 70 30° 60 60° 50 90° 40 120° 180° 30 DC 20 0 200 400 600 800 1000 1200 1400 1600 A v e ra g e O n - st a t e C u rre n t (A ) Average O n-state Current (A) Fig. 4 - Current Ratings Characteristics 2 2 00 2 0 00 1 80° 1 20° 90° 60° 30° 1 8 00 1 6 00 1 4 00 R M S Lim it 1 2 00 1 0 00 8 00 C o ndu ctio n A ng le 6 00 4 00 ST 3 3 3 C ..C S e r ie s TJ = 1 2 5 °C 2 00 0 0 20 0 400 60 0 80 0 M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W ) M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W ) Fig. 3 - Current Ratings Characteristics 26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 10 0 0 800 600 400 200 0 DC 180° 120° 90° 60° 30° C o ndu ctio n Pe rio d S T3 3 3 C ..C Se rie s T J = 1 2 5 °C 0 1 00 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a t e C u rre n t (A ) At An y Rated L oad Con dition And W ith Rated VRR M Applied Following Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 9500 9000 8500 8000 7500 7000 6500 6000 5500 ST333C..C Series 5000 4500 1 10 100 N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave O n-state Curren t (A) Peak Half Sine W ave O n-state Current (A) Fig. 5 - On-state Power Loss Characteristics 10000 R M S L im it 12000 Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration. C ontrol O f Con duction May Not Be M ain tained. Initial TJ = 125°C 10000 No Voltage Reapplied Rated VRR M Reapplied 9000 11000 8000 7000 6000 5000 ST333C..C Series 4000 0.01 0.1 1 Pulse T rain Duration (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST333C..C Series Bulletin I25170 rev. B 04/00 T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) Instantaneous On-state Current (A) 10000 T = 25°C J 1000 T = 125°C J ST333C..C Series 100 0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 0 .1 S T3 3 3 C ..C Se r ie s S te a d y St a t e V a lu e R th J-hs = 0 .0 9 K /W (S in gle Sid e C o o le d ) 0 .0 1 R thJ-h s = 0 .0 4 K /W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) Maximum Reverse Recovery Charge - Q rr (µC) 320 I TM = 50 0 A 3 00 A 2 00 A 10 0 A 50 A 280 260 240 220 200 180 160 140 ST333C..C Series TJ = 125 °C 120 100 80 10 20 30 40 50 60 70 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 300 0. 1 Sq u a re W a v e P u ls e D ur at io n (s) Instan tan eous O n-state V oltage (V) 90 100 180 I T M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A 160 140 120 100 80 ST 3 3 3 C ..C S e rie s TJ = 1 2 5 ° C 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 Rate O f Fall O f O n-state Current - di/dt (A/µs) R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -st a te C u rre n t (A ) 1 E4 1 000 50 0 4 00 20 0 1 00 50 Hz 50 0 1 50 0 Snubb er c ircu it R s = 1 0 o hm s C s = 0 .47 µF V D = 80 % V D RM 25 00 1 E3 4 00 20 0 1 00 50 H z 1 000 3 00 0 15 0 0 Snubb er circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V D RM 2 50 0 3 00 0 50 00 ST33 3 C..C Serie s Sin uso idal pulse T C = 40°C tp 1 E2 1 E1 1E2 1E3 5 00 0 1 E14E 41 E1 1E 1 P ulse B a se w id th (µ s) ST33 3C ..C Serie s Sinuso idal pulse T C = 55°C tp 1E2 1E3 1E4 Pu lse B a se w id th (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST333C..C Series Bulletin I25170 rev. B 04/00 P e a k O n - st a t e C ur re n t (A ) 1E4 100 0 50 0 15 00 20 0 0 2 5 00 1E3 40 0 2 00 10 0 50 Hz Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V D RM Snubbe r circuit R s = 1 0 o hm s C s = 0.47 µF V D = 80 % V D RM 3 0 00 10 0 40 0 2 00 10 00 50 0 1 5 00 20 00 2 50 0 3 00 0 ST3 33 C.. C Se ries Trap ezo id al p ulse TC = 4 0°C di/d t = 50 A/µs 5 00 0 tp 1E2 1 E1 1E2 1E3 50 Hz tp 50 00 1 E14E 41 E1 1E 1 1 E2 P u lse Ba se w id t h (µ s) ST33 3C. .C Se ries Trapezo idal p ulse T C = 55 °C di/dt = 1 00A /µs 1 E3 1 E4 P u lse Ba se w id th (µs) Fig. 14 - Frequency Characteristics P e a k O n - st a te C u rre n t (A ) 1 E4 Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V DR M 4 00 200 10 0 5 00 5 0 Hz 4 00 2 00 100 0 15 00 20 00 1 E3 5 0 Hz 10 0 0 Snubb er c ircuit R s = 10 o hm s C s = 0 .47 µ F V D = 80 % V D RM 2 50 0 3 00 0 ST33 3 C..C Serie s Trape zoidal pulse T C = 40°C d i/dt = 100 A/µs 50 00 tp 1 E2 1 E1 10 0 50 0 1 E2 1E3 1 50 0 20 00 2 50 0 ST333 C.. C Se ries Trapezo id al p ulse TC = 55 °C di/dt = 10 0A /µs 3 00 0 tp 5 00 0 1 E14E 4 1 E11E 1 1E 2 P u lse B ase w id t h (µ s) 1 E3 1 E4 P u lse Ba se w id th (µ s) Fig. 15 - Frequency Characteristics P e a k O n - sta t e C u rre n t (A ) 1E4 20 jo ule s pe r p ulse 3 5 10 tp 2 ST3 33 C Se ries Rec tang ula r pulse di/dt = 50A /µs 2 0 jou les p er pulse 10 5 1 1E3 3 2 0.5 1 0 .3 0 .5 0.2 0.4 0.3 1E2 0.2 tp 1E1 1E1 ST33 3C ..C Se ries Sinuso idal pulse 1E2 1E3 P u lse B ase w id t h (µ s) 1 E14E 4 1 E11E 1 1E2 1 E3 1E4 P u lse Ba se w id t h (µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST333C..C Series Bulletin I25170 rev. B 04/00 Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 µ s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=25 °C 1 Tj=- 40 °C Tj=12 5 °C In st a n ta n e o u s G at e V o lt a ge ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t ( A ) Fig. 17 - Gate Characteristics www.irf.com 9