Bulletin I25187 rev. B 04/00 ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design 620A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AC (B-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST333C..L Units 620 A 55 °C 1230 A 25 °C @ 50Hz 11000 A @ 60Hz 11500 A @ 50Hz 605 KA2s @ 60Hz 553 KA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C I T(AV) @ Ths I T(RMS) @ Ths I TSM I 2t V DRM/V RRM t q range TJ www.irf.com 1 ST333C..L Series Bulletin I25187 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST333C..L 50 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel Units 100µs 50Hz 400Hz 1430 1670 1250 1170 2340 2310 1940 2010 6310 3440 5620 5030 1000Hz 1080 880 2090 1800 2040 1750 2500Hz 530 400 1190 990 990 800 50 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd VDRM VDRM 50 VDRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature ST333C..L Units Conditions 620 (305) A 180° conduction, half sine wave 55 (75) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 11000 t = 10ms non-repetitive surge current 11500 A 9250 I 2t Maximum I2 t for fusing 2 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 605 t = 10ms No voltage Initial TJ = TJ max 553 t = 8.3ms reapplied KA2 s 391 Maximum I2 √t for fusing reapplied t = 10ms 9700 428 I 2 √t No voltage t = 8.3ms 6050 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST333C..L Series Bulletin I25187 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward slope resistance ST333C..L Units 1.96 0.91 ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse V 0.58 mΩ IH 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.93 High level value of forward slope resistance Maximum holding current rt 2 Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.58 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST333C..L Units 1000 Typical delay time Max. turn-off time A/µs Max 30 TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs 1.1 Min 10 Conditions µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST333C..L Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST333C..L Units PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max., f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST333C..L Series Bulletin I25187 rev. B 04/00 Thermal and Mechanical Specification Parameter ST333C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, 0.011 case to heatsink K/W 0.005 Mounting force, ± 10% wt DC operation single side cooled K/W 0.05 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions °C 0.11 junction to heatsink F Units DC operation double side cooled DC operation single side cooled DC operation double side cooled 9800 N (1000) (Kg) 250 g TO - 200AC (B-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 Units Conditions K/W TJ = TJ max. Ordering Information Table Device Code ST 33 3 C 08 L H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available dv/dt (V/µs) 20 8 - tq code 10 CN 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 12 CM 15 CL 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) t q(µs) 18 CP 20 CK 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 -3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 30 -- 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 50 DN DM DL DP DK --- 100 EN EM EL EP EK --- 200 -FM * FL * FP FK FJ -- 400 --HL HP HK HJ HH *Standard part number. All other types available only on request. = 1000V/µsec (Special selection) www.irf.com ST333C..L Series Bulletin I25187 rev. B 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 0 6 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 5 8 .5 (2 .3 ) D I A . M AX . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 130 ST333C..L Series (Single Side Cooled ) R th J-hs (DC) = 0.11 K/W 120 110 100 90 Co n duc tio n An g le 80 70 30° 60 60° 90° 50 120° 180° 40 30 0 100 200 300 400 500 M a xim u m A llo w a ble H e a tsin k T e m p e r a tu re ( °C ) Maximum Allowable Heatsin k Tem perature (°C) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 1 30 ST 3 3 3 C ..L Se rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 1 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n P eriod 70 60 50 9 0° 40 30 30° 20 0 60° 120° 1 80° DC 10 0 20 0 30 0 40 0 5 0 0 6 0 0 7 00 8 00 Average O n-state Current (A) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST333C..L Series 13 0 ST 3 3 3 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ- hs (D C ) = 0 .0 5 K /W 12 0 11 0 10 0 90 80 Co nd uctio n A ng le 70 60 3 0° 50 60° 40 90° 1 20° 180 ° 30 20 0 1 00 20 0 3 0 0 4 0 0 5 00 6 0 0 70 0 8 00 M a x im u m A llo w a b le H e a tsin k T e m p e ra t ure (° C ) M a x im u m A llo w a b le H e a tsin k T e m p e rat u re (°C ) Bulletin I25187 rev. B 04/00 130 ST 3 3 3 C ..L S e rie s (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 5 K / W 120 110 100 90 C o ndu c tio n Pe rio d 80 70 30° 60 60° 50 90° 12 0° 40 1 80° 30 DC 20 0 200 A v e ra g e O n -st a t e C u rre n t (A ) 1600 1400 RMS Lim it 1200 1000 800 600 Co n duc tio n An g le 400 ST333C..L Series T J = 125°C 200 0 0 200 400 600 800 M a x im um A v e ra ge O n -st a t e P o w e r Lo ss (W ) Maximum Average On -state Power Loss (W ) 1800 28 0 0 DC 180° 120° 90° 60° 30° 24 0 0 20 0 0 16 0 0 C o nduc tio n Pe rio d 800 ST 3 3 3 C ..L Se rie s T J = 1 2 5 °C 400 0 0 1000 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 1 4 00 1 60 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 6 - On-state Power Loss Characteristics At An y Rated Load Condition And W ith Rated V RRM App lied Follow ing Surge. Initial T J = 125°C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 9000 8500 8000 7500 7000 6500 6000 5500 5000 ST333C..L Series 4500 1 6 10 100 12000 P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) Peak Half Sine W ave O n-state Current (A) Fig. 5 - On-state Power Loss Characteristics 9500 R M S Lim it 12 0 0 Average O n-state Current (A) 10000 8 00 10 0 0 1 20 0 1 4 00 Fig. 4 - Current Ratings Characteristics 2200 180° 120° 90° 60° 30° 600 A v e ra g e O n -st a t e C urre n t ( A ) Fig. 3 - Current Ratings Characteristics 2000 400 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l O f C o n d u c t io n M a y N o t B e M a in ta in e d . In it ia l T J = 1 2 5 ° C 10000 N o V o lt a g e R e a p p lie d Ra t e d V RRM R e a p p lie d 9000 11000 8000 7000 6000 5000 ST 3 3 3 C ..L Se rie s 4000 0.01 0.1 1 N um b er O f E qu al Am plitud e Half Cy c le C urre nt Pulse s (N ) P u lse Tr a in D u ra t io n (s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST333C..L Series Bulletin I25187 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z th J- hs (K / W ) Instanta neous On-state Current (A) 10000 1000 T J = 25°C T J = 125°C ST333C..L Series 100 0 1 2 3 4 5 6 7 1 St e a d y St a t e V a lu e R thJ-hs = 0 .1 1 K / W (Sin g le Sid e C o o le d ) R th J- hs = 0 .0 5 K / W 0 .1 (D o ub le Sid e C o o le d ) (D C O p e ra tio n ) 0 .0 1 S T 3 3 3 C ..L Se rie s 0 .0 0 1 0 .0 0 1 0. 01 320 I T M = 10 00 A 50 0 A 30 0 A 20 0 A 10 0 A 280 260 240 220 200 180 160 140 ST333C..L Series TJ = 125 °C 120 100 80 10 20 30 40 50 60 70 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics M a x im um R e v e rse R e c o v e ry C u rre n t - Ir r (A ) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 9 - On-state Voltage Drop Characteristics 300 0. 1 S q u a re W a v e P u lse D ur at io n (s) Instan ta neous On -state V oltage (V ) 90 100 1 80 I TM = 10 00 A 50 0 A 30 0 A 2 00 A 1 00 A 1 60 1 40 1 20 1 00 80 S T 3 3 3 C ..L S e rie s T J = 1 2 5 °C 60 40 20 10 20 30 40 50 60 70 80 90 1 00 Rate O f Fall O f O n-sta te Current - di/dt (A/µs) R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/d t (A / µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -st a t e C u rre n t (A ) 1E4 1 00 0 50 0 40 0 20 0 1 00 50 H z 1 00 0 1 50 0 Snubb er c ircuit R s = 1 0 o hm s C s = 0. 47 µF V D = 80 % V D RM 2 50 0 1E3 30 00 5 0 00 1E2 1E1 1E2 1 50 0 30 00 5 00 0 1E3 1 E14E 4 1 E11E 1 P u lse B a se w id th (µ s) 5 0 Hz ST33 3C ..L Se ries Sin uso idal pulse T C = 55°C tp 1 E2 100 Snub ber c ircu it R s = 10 ohm s C s = 0 .47 µF V D = 80 % V DR M 25 00 ST3 33C ..L Se ries Sinuso idal pulse TC = 40 °C tp 500 40 0 20 0 1 E3 1E4 P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST333C..L Series Bulletin I25187 rev. B 04/00 P e a k O n -st a t e C urre n t ( A ) 1E4 Snub ber c irc uit R s = 10 o hm s C s = 0 .47 µF V D = 80 % V D RM Snub ber circuit R s = 10 o hm s C s = 0.4 7 µF V D = 80% V D RM 1 000 40 0 5 00 20 0 100 50 Hz 100 0 15 00 1E3 1 00 50 Hz 1 50 0 20 00 20 00 25 00 25 00 3 00 0 5 000 1E2 1E1 40 0 20 0 5 00 ST3 33C ..L Se ries Trape zoidal pulse T C = 40°C d i/dt = 5 0A /µs tp 1 E2 5 00 0 tp 1 E14E 41 E1 1E 1 1 E3 ST33 3C ..L Series Tra pezo ida l pu lse T C = 5 5°C di/dt = 50 A/µs 3 000 1E 2 P u lse B ase w id t h ( µs) 1E3 1E4 P ulse Ba se w id th ( µs) Fig. 14 - Frequency Characteristics Pe a k O n -sta t e C u rre n t (A ) 1E 4 Snub be r c irc uit R s = 10 oh m s C s = 0 .47 µ F V D = 80 % V D RM Snubb er circuit R s = 1 0 ohm s C s = 0.4 7 µF V D = 80% V D RM 5 00 10 00 1E 3 40 0 200 1 00 50 Hz 10 00 15 00 2 00 10 0 5 0 Hz 1 50 0 20 00 2 500 2 00 0 300 0 ST33 3C .. L Serie s Trap ezo id al pulse T C = 4 0°C di/d t = 10 0A/µs 50 00 tp 1E 2 1 E1 40 0 50 0 1E2 1E3 2 50 0 ST33 3C ..L Se ries Tra pezo idal p ulse T C = 5 5°C di/dt = 1 00A /µs 3 000 tp 500 0 1 E14E 4 1 E11E 1 1E2 P ulse B a se w id t h (µ s) 1 E3 1E4 P ulse Ba se w id th ( µ s) Fig. 15 - Frequency Characteristics Pe a k O n -st a te C u rre n t (A ) 1E5 tp 1E4 1 2 3 5 10 ST333 C. .L Series Re ctan gular pu lse di/d t = 5 0A/µs 2 0 jo ule s per p ulse 2 0. 5 1E3 3 5 10 20 jo ule s per pu lse 1 0.3 0 .5 0 .2 0.3 1E2 tp 1E1 1E1 0 .2 ST3 33C ..L Serie s Sinusoidal pulse 1 E2 1 E3 P u lse Ba se w id t h (µ s) 1 E14E 41 E11E 1 1 E2 1E3 1E4 P u lse B ase w id t h (µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST333C..L Series Bulletin I25187 rev. B 04/00 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST333C..L Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9